| Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562) |
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| 01/16/2003 | US20030010978 Semiconductor wafers with integrated heat spreading layer |
| 01/15/2003 | CN1390987A Composite flash crystal doped by lutetium cerialuminate and yttrium aluminate and its preparing process |
| 01/09/2003 | WO2003002457A1 Thin sheet producing method, and solar cell |
| 01/03/2003 | WO2003000963A1 Substrate for forming magnetic garnet single crystal film, optical device, and its production method |
| 01/02/2003 | EP1268883A1 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
| 12/19/2002 | WO2002101123A1 Method for preparing oxide crystal film/substrate composite and solution for use therein |
| 12/12/2002 | WO2002099169A1 Single crystal silicon carbide and method for producing the same |
| 12/04/2002 | CN1382558A Directional setting technique for laser epitaxial technology |
| 10/22/2002 | US6468884 Method of forming silicon-contained crystal thin film |
| 10/17/2002 | DE10117306A1 Production of structured multiple layer arrangement comprises growing island structures from metallic solution on substrate or layer using liquid phase epitaxy, and growing covering layer on island structures |
| 10/03/2002 | US20020139293 Method of manufacturing a magnet-free faraday rotator |
| 08/27/2002 | US6440212 Low cost method for making thermoelectric coolers |
| 08/22/2002 | US20020112660 Liquid phase growth method of silicon crystal, method of producing solar, cell, and liquid phase growth apparatus |
| 08/15/2002 | US20020108559 Liquid phase growth methods and liquid phase growth apparatus |
| 08/08/2002 | US20020106874 Crystal growth process, semiconductor device, and its production process |
| 08/06/2002 | US6429035 Method of growing silicon crystal in liquid phase and method of producing solar cell |
| 07/25/2002 | US20020096104 Single crystal SiCand method of producing the same as well as SiC semiconductor device and SiC composite material |
| 07/24/2002 | EP1225257A2 Single crystal SiC and method of producing the same as well as SiC semiconductor device and SiC composite material |
| 07/18/2002 | US20020092464 Liquid phase growth process, liquid phase growth system and substrate member production method |
| 06/20/2002 | US20020076882 Wafer cassette, and liquid-phase growth system and liquid-phase growth process which make use of the same |
| 06/13/2002 | US20020072203 Thin film-structure and a method for producing the same |
| 06/11/2002 | US6402836 Method for epitaxial growth on a substrate |
| 05/23/2002 | US20020061632 Method and apparatus for producing semiconductor thin films |
| 05/21/2002 | US6391108 Liquid phase growth method of silicon crystal, method of producing solar cell, and liquid phase growth apparatus |
| 05/07/2002 | US6383286 Method of making semiconductor super-atom and aggregate thereof |
| 05/01/2002 | CN1347138A Heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor |
| 04/17/2002 | CN1345096A Method and device for manufacture of gallium phosphide luminous component |
| 04/09/2002 | US6368401 Method of producing magnetic garnet single crystal film and magnetic garnet single crystal film having a nonuniform thickness |
| 03/28/2002 | WO2002024982A1 Method for producing crystal thin plate and solar cell comprising crystal thin plate |
| 03/21/2002 | WO2002022920A1 Rare earth-iron garnet single crystal material and method for preparation thereof and device using rare earth-iron garnet single crystal material |
| 03/07/2002 | WO2002018678A1 Method for preparing single crystal oxide thin film |
| 02/21/2002 | WO2001063024A8 Production of ceramic layers |
| 02/14/2002 | DE10026911A1 Verfahren zur Herstellung einer halbleitenden Nanostruktur und Aggregat davon A process for producing a semiconducting nanostructure and aggregate thereof |
| 02/07/2002 | US20020014198 Silicon carbide and method for producing the same |
| 02/06/2002 | EP1178494A1 Oxide superconductor, method of manufacture thereof, and base material of oxide superconductor |
| 02/06/2002 | CN1334360A Method for mfg. microwave device |
| 01/31/2002 | US20020013053 Method of producing a microwave device |
| 01/29/2002 | CA2205918C Epitaxial growth of silicon carbide and resulting silicon carbide structures |
| 01/17/2002 | US20020005158 Liquid phase growth method of silicon crystal, method of producing solar cell, and liquid phase growth apparatus |
| 01/15/2002 | US6338755 Method for producing a single crystalline member |
| 01/02/2002 | CN1329184A Bismuth-substituted garnets thick film material and producing method thereof |
| 12/20/2001 | US20010052828 Material for bismuth substituted garnet thick film and a manufacturing method thereof |
| 12/13/2001 | US20010051387 Method of growing silicon crystal in liquid phase and method of producing solar cell |
| 12/12/2001 | EP1162635A1 Material for bismuth substituted garnet thick film and a manufacturing method thereof |
| 12/06/2001 | CA2349871A1 Material for bismuth substituted garnet thick film and a manufacturing method thereof |
| 11/29/2001 | WO2001090449A1 A method for growing single crystals |
| 10/30/2001 | US6309557 Magnetic garnet material and faraday rotator using the same |
| 10/10/2001 | EP1143042A1 Magnetic garnet single-crystal film and method of producing the same, and faraday rotator comprising the same |
| 10/10/2001 | EP1143033A2 Silicon carbide and method for producing the same |
| 10/03/2001 | CN1072282C Growth of silicon carbide monocrystal using silicon substrate beta-silicon carbide crystal |
| 09/27/2001 | US20010023932 Bismuth-substituted rare earth-iron; minimal cracking while growing, cooling or polishing and worked; controlled liquid-phase epitaxial growth |
| 09/26/2001 | CN1314506A Magnetic garnet monocrystal film and its preparation, and Faraday rotor using said monocrystal film |
| 09/26/2001 | CN1314505A Method and device for restraining growth of artificial crystal |
| 09/20/2001 | WO2001068957A1 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
| 09/13/2001 | DE10007946A1 Production of ceramic layers, especially carbide layers, on a substrate comprises feeding ceramic particles to the substrate using a transfer medium enriched with ceramic particles by heating a ceramic part to a high temperature |
| 09/06/2001 | US20010019877 Method of forming silicon-contained crystal thin film |
| 08/30/2001 | WO2001063024A1 Production of ceramic layers |
| 08/22/2001 | CN1069935C Method for reducing formation of microtransistor defect in epitaxial growth of silicon carbide, and resulting silicon carbide structure |
| 08/14/2001 | US6273946 Method for production of multi-layered epitaxially grown crystal and apparatus therefor |
| 08/07/2001 | US6270569 Melting a group iii metal, injecting ammonia into melt produces nitride microcrystal; the two then react on the surface of a seed/substrate crystal, allowing the nitride crystal to be grown; blue laser diodes |
| 08/02/2001 | US20010010375 Gallium phosphide semiconductor configuration and production method |
| 07/25/2001 | CN1305241A Magnetostatic wave element and its manufacturing method |
| 05/22/2001 | US6235116 Method and apparatus for growing layer on one surface of wafer |
| 05/15/2001 | US6231667 Liquid phase growth method and liquid phase growth apparatus |
| 04/11/2001 | CN1290959A Liquid phase growing method liquid growing equipment and solar cell |
| 04/04/2001 | EP1088913A2 Liquid-phase growth method, liquid-phase growth apparatus, and solar cell |
| 03/21/2001 | EP1084514A1 GaP-SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING THE SAME |
| 03/20/2001 | US6203728 To decrease an absorption coefficient for a light in a blue light range; optics |
| 02/22/2001 | DE19938631A1 Production of thin single crystalline layers or layer system by depositing on a substrate comprises deviating the surface normals from the specified directions of the substrate to produce steps |
| 02/20/2001 | US6190937 Method of producing semiconductor member and method of producing solar cell |
| 02/15/2001 | DE10036672A1 Gallium arsenide single crystal wafer has surfaces formed as a substrate for growing an n-type layer and a p-type layer by means of liquid phase epitaxy using silicon as amphoteric dopant |
| 02/13/2001 | US6187279 Used as a semiconductor substrate wafer for a light-emitting diode, an x-ray optical element such as a monochromatic sorter, a high-temperature semiconductor electronic element, and a power device. |
| 02/01/2001 | DE10029550A1 Verfahren zur Herstellung einer magnetischen einkristallinen Granatschicht und magnetische einkristalline Granatschicht von ungleichmäßiger Dicke A process for producing a magnetic garnet single-crystal layer and magnetic garnet single crystal layer of uniform thickness |
| 01/18/2001 | DE10026319A1 Single crystalline body production comprises preparing substrate, forming seed crystal part on surface of substrate and contacting seed crystal part with solution containing chemical element in saturation |
| 01/03/2001 | CN1278649A Method for making magnetic garnet monocrystal film and mangetic garnet monocrystal film with ununiform thickness |
| 12/28/2000 | DE10011697A1 Oxide superconductor film for switching element, has bi-crystal oxide superconductor film formed on bi-crystal board which has junction of predetermined length |
| 11/08/2000 | EP1049820A1 Method for epitaxial growth on a substrate |
| 11/08/2000 | EP1049813A1 T proced |
| 11/08/2000 | EP0444209B1 Thin film of lithium niobate single crystal and production thereof |
| 10/26/2000 | WO2000063926A1 Oxide superconductor, method of manufacture thereof, and base material of oxide superconductor |
| 09/20/2000 | CN2397130Y Container for liquid phase epitaxial horizontal growth of crystal film |
| 06/07/2000 | EP1005580A1 Liquid phase epitaxy through a porous material |
| 06/02/2000 | WO2000031322A1 Method for epitaxial growth on a substrate |
| 06/02/2000 | WO2000031317A1 Reactor and method for chemical vapour deposition |
| 05/09/2000 | US6059878 Liquid phase epitaxial; hydrogen reduction |
| 04/18/2000 | US6051062 Producing an optical single crystal epitaxial film from a melt containing a transition metal on a single crystal substrate by a liquid phase epitaxial method |
| 03/14/2000 | US6036770 Growing laterally continuous mercury-cadmium-telluride filmwith a constanrt ratio of mercury to cadmium, laterally non-uniformly heating film to reduce this ratio |
| 03/08/2000 | EP0983395A1 Epitaxy boat and method for liquid phase epitaxial deposit of cdhgte |
| 02/16/2000 | CN1244724A Crystal growth technology and semiconductor device and its producing method |
| 01/05/2000 | EP0969499A2 Crystal growth process for a semiconductor device |
| 01/05/2000 | EP0515682B1 Thin film of lithium niobate single crystal |
| 12/28/1999 | US6008162 Production method of oxide superconductive film |
| 12/15/1999 | EP0964081A2 Single crystal SiC and a method of producing the same |
| 12/09/1999 | WO1999063602A1 GaP-SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING THE SAME |
| 12/07/1999 | US5998050 Rare earth (or yttium) barium copper oxide |
| 12/02/1999 | DE19824566C1 GaP-Halbleiteranordnung und Verfahren zur Herstellung derselben GaP semiconductor device and method of manufacturing the same |
| 11/16/1999 | US5985023 Method for growth of a nitrogen-doped gallium phosphide epitaxial layer |
| 11/16/1999 | US5985022 Optoelectric articles and a process for producing the same |
| 07/28/1999 | CN1224084A Film growth of silicon carbide monocrystal using silicon substrate beta-silicon carbide crystal |
| 07/13/1999 | US5922126 Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder |