Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 19 - Liquid-phase epitaxial-layer growth
Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562)
06/1986
06/03/1986US4592304 Apparatus for liquid phase epitaxy of mercury cadmium telluride
05/1986
05/27/1986US4591408 Liquid phase growth of crystalline polyphosphide
05/20/1986US4589737 Doped and undoped single crystal multilayered structures
05/13/1986CA1204526A1 Liquid phase epitaxial growth method
05/07/1986EP0179907A1 Silver thiogallate single crystal layers epitaxially grown from potassium chloride-silver thiogallate solution.
05/07/1986EP0179852A1 Doped and undoped single crystal multilayered structures.
05/07/1986EP0179851A1 A METHOD OF SYNTHESIZING THIN, SINGLE CRYSTAL LAYERS OF SILVER THIOGALLATE (AgGaS2).
04/1986
04/23/1986EP0178713A1 Method of manufacturing a semiconductor device, in which an epitaxial layer doped with Mg is deposited on a semiconductor body
04/15/1986US4582561 Silicon carbide seed layer is formed on silicon substrate, substrate melted to expose seed layer to molten silicon, epitaxially growing on inner surface
03/1986
03/25/1986US4578126 Liquid phase epitaxial growth process
03/11/1986US4574730 Melt dispensing liquid phase epitaxy boat
02/1986
02/25/1986US4572763 Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof
02/25/1986CA1201220A1 Melt dispensing liquid phase epitaxy boat
02/04/1986US4567849 Neutral body within sealed vessel, temperature sensing elements
01/1986
01/28/1986US4566934 Cleaning technique for LPE melt ingots
01/21/1986US4565156 Apparatus for performing solution growth relying on temperature difference technique
01/21/1986CA1199487A1 Process for the production of iron oxides epitaxially coated with iron oxides for magnetic recording
12/1985
12/31/1985US4561915 Process for epitaxial growth on a corrugated wafer
11/1985
11/21/1985WO1985005135A1 Silver thiogallate single crystal layers epitaxially grown from potassium chloride-silver thiogallate solution
11/21/1985WO1985005134A1 Doped and undoped single crystal multilayered structures
11/21/1985WO1985005133A1 A METHOD OF SYNTHESIZING THIN, SINGLE CRYSTAL LAYERS OF SILVER THIOGALLATE (AgGaS2)
11/21/1985EP0161540A1 Device for hardening flat materials from compounds, and compositions hardenable by U.V. radiation
11/21/1985EP0064514A4 Process and apparatus for growing mercury cadmium telluride layer by liquid phase epitaxy from mercury-rich melt.
11/13/1985EP0160701A1 Lpe growth on group iii-v compound semiconductor substrates containing phosphorus.
10/1985
10/15/1985US4547230 LPE Semiconductor material transfer method
10/01/1985US4544438 Including oxides of vanadium, tungsten or molybdenum to increase magnetic antisotropy
09/1985
09/10/1985US4540461 Silver thiogallate single crystal layers epitaxially grown from potassium chloride-silver thiogallate solution
09/10/1985US4540450 Indium phosphide, tellurium
08/1985
08/20/1985US4536227 Method of and apparatus for producing a controlled unsaturated vapor pressure of a volatile liquid in a heat treatment chamber
08/20/1985US4535720 Liquid phase epitaxy apparatus
08/13/1985US4534822 Antimony sulfide-lead sulfide solvents, seed crystal
08/07/1985EP0151000A2 A liquid-phase epitaxial growth method of a IIIb-Vb group compound
07/1985
07/30/1985US4532001 Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound
07/16/1985US4529027 Method of preparing a plurality of castings having a predetermined composition
07/04/1985WO1985002059A3 Lpe growth on group iii-v compound semiconductor substrates containing phosphorus
06/1985
06/11/1985US4522849 Reacting diborane with ammonia in stream of inert gas
05/1985
05/28/1985US4520460 Temperature stable magnetic bubble compositions
05/28/1985US4519871 Bubble-mode liquid phase epitaxy
05/09/1985WO1985002059A2 Lpe growth on group iii-v compound semiconductor substrates containing phosphorus
05/08/1985EP0140565A1 Method for growing multicomponent compound semiconductor crystals
04/1985
04/17/1985EP0137641A2 Rapid LPE crystal growth
03/1985
03/12/1985US4504328 Liquid phase epitaxial growth technique
02/1985
02/19/1985US4500367 Liquid phase epitaxy growth in nitrogen or helium atmosphere
02/13/1985EP0132954A2 Liquid phase growth of crystalline polyphosphide
02/12/1985US4498937 Liquid phase epitaxial growth method
01/1985
01/22/1985CA1181328A1 Device for epitaxially providing a layer of semiconductor material
12/1984
12/05/1984EP0127210A2 Liquid phase epitaxy apparatus
11/1984
11/28/1984EP0126502A2 Liquid phase epitaxy apparatus
11/13/1984US4482423 Protection of semiconductor substrates during epitaxial growth processes
10/1984
10/24/1984EP0122339A2 Method of and apparatus for producing a controlled unsaturated vapour pressure of a volatile liquid in a liquid epitaxy or annealing process
10/02/1984US4474640 In situ differential thermal analysis for HgCdTe LPE
09/1984
09/11/1984US4470368 LPE Apparatus with improved thermal geometry
08/1984
08/28/1984US4468258 Crystal structure
08/14/1984US4465527 Method for producing a group IIB-VIB compound semiconductor crystal
07/1984
07/25/1984EP0113954A1 A substrate for manufacturing single crystal thin films
07/24/1984CA1171342A1 Method of making magnetic film substrate composites
06/1984
06/27/1984EP0111758A1 Liquid phase epitaxial growth method
06/12/1984US4454206 Magnetic device having a monocrystalline garnet substrate bearing a magnetic layer
05/1984
05/24/1984WO1984001968A1 Method in liquid phase epitaxy and apparatus for carrying out the method
05/15/1984CA1167573A1 Device for epitaxial depositing layers from a liquid phase
03/1984
03/13/1984CA1163538A1 Holder for liquid phase epitaxial growth
03/06/1984US4435224 Process for preparing homogeneous layers of composition Hg1-x Cdx
02/1984
02/15/1984EP0100484A1 Method of manufacturing cobalt-epitaxial layered iron oxides for magnetic recording
01/1984
01/24/1984US4427464 Liquid phase epitaxy
01/17/1984CA1160762A1 Liquid phase epitaxy method and apparatus
01/03/1984CA1159652A1 Semiconductor materials
12/1983
12/28/1983EP0096922A1 Method of preparing a plurality of castings having a predetermined composition
12/06/1983US4419178 Endless belts, monocrystals
11/1983
11/09/1983EP0093569A1 A method of liquid phase epitaxial growth
11/08/1983US4414290 Rare earth-iron garnet
11/01/1983US4412502 Apparatus for the elimination of edge growth in liquid phase epitaxy
10/1983
10/25/1983CA1155974A1 Epitaxial growth method using liquid gallium bath
10/05/1983EP0090521A2 A method of performing solution growth of a group III-V compound semiconductor crystal layer under control of the conductivity type thereof
09/1983
09/27/1983US4406245 Device for epitaxial depositing layers from a liquid phase
09/14/1983EP0088579A1 Apparatus for performing solution growth relying on temperature difference technique
08/1983
08/30/1983US4401487 Liquid phase epitaxy of mercury cadmium telluride layer
08/23/1983US4400445 Using a lead oxide-vanadium oxide flux with a gallium oxide-gadolinium oxide garnet; magnetic bubbles
08/09/1983US4397260 Boat for the epitaxial growth of several layers from the liquid phase
07/1983
07/19/1983US4393806 Boat for the epitaxial growth from the liquid phase
07/13/1983EP0083540A1 Process for the liquid epitaxial deposition of a ternary compound
07/12/1983CA1149709A1 Magneto-optic bi.sub.1 lu.sub.2 fe.sub.5 o in12 xx crystals
06/1983
06/28/1983US4390379 Elimination of edge growth in liquid phase epitaxy
06/21/1983US4389274 Electrochemical deoxygenation for liquid phase epitaxial growth
06/07/1983US4386975 Liquid phase using graphite boat in quartz tube
05/1983
05/24/1983US4384398 Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs
04/1983
04/12/1983US4379853 Magnetic device having a monocrystalline garnet substrate bearing a magnetic layer
04/12/1983CA1144453A1 Prevention of decomposition of phosphorous containing substrates
03/1983
03/16/1983EP0073938A1 Production of semicrystalline silicon sheets
03/15/1983CA1142840A1 Seed and method and epitaxial solidification
02/1983
02/15/1983US4373989 Controlled in situ etch-back
02/15/1983US4373988 Method of growing epitaxial layers from a liquid phase
02/08/1983US4372808 Process for removing a liquid phase epitaxial layer from a wafer
02/01/1983US4371420 Method for controlling impurities in liquid phase epitaxial growth
01/1983
01/25/1983CA1140032A1 Growth of semiconductor compounds
01/04/1983US4366771 Graphite slider system
12/1982
12/28/1982US4366009 Method of manufacturing semiconductor structures by epitaxial growth from the liquid phase
11/1982
11/17/1982EP0064514A1 Process and apparatus for growing mercury cadmium telluride layer by liquid phase epitaxy from mercury-rich melt.
11/16/1982US4359012 Apparatus for producing a semiconductor device utlizing successive liquid growth
11/09/1982US4357897 Device for epitaxially providing a layer of semiconductor material
10/1982
10/19/1982US4354453 Substrate holder for liquid phase epitaxial growth
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