| Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562) |
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| 04/17/2013 | CN101421443B Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device |
| 04/11/2013 | WO2013050927A1 Method of forming a crystallised silicon layer on the surface of a plurality of substrates |
| 04/10/2013 | CN103031599A Method for directly synthesizing super-long carbon nanowire by electric-heating catalysis in liquid phase and apparatus |
| 04/04/2013 | DE112011102031T5 Siliziumband, sphärisches Silizium, Solarzelle, Solarzellenmodul, Verfahren zum Herstellen eines Siliziumbandes und Verfahren zum Herstellen sphärischen Siliziums Silicon ribbon, spherical silicon solar cell, solar cell module, method for manufacturing a silicon strip and method for producing spherical silicon |
| 04/03/2013 | CN103025925A Mold shape to optimize thickness uniformity of silicon film |
| 04/03/2013 | CN103014844A Tellurium-cadmium-mercury vertical liquid-phase extension sample holder |
| 03/28/2013 | US20130074762 Manufacturing method and manufacturing apparatus of a group iii nitride crystal |
| 03/27/2013 | CN102995123A Manufacturing method of group 13 nitride crystal |
| 03/27/2013 | CN102995115A Graphite boat for liquid phase epitaxy growth and liquid phase epitaxy growth method |
| 03/26/2013 | US8404042 Group-III nitride crystal composite |
| 03/14/2013 | US20130065036 Group 13 nitride crystal substrate, manufacturing method of group 13 nitride crystal, and gallium nitride crystal |
| 03/14/2013 | US20130061799 Manufacturing method of group 13 nitride crystal |
| 03/13/2013 | CN202786500U Support device for base |
| 03/07/2013 | WO2013031154A1 Semiconductor wafer manufacturing method, and semiconductor wafer |
| 03/06/2013 | CN101932757B Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal |
| 02/28/2013 | WO2013028494A1 Mold thermophysical properties for thickness uniformity optimization of exocast sheet |
| 02/28/2013 | US20130052421 Monocrystalline epitaxially aligned nanostructures and related methods |
| 02/21/2013 | WO2013025259A1 Chemical solution seed layer for rabits tapes |
| 02/21/2013 | US20130042802 Method of production of sic single crystal |
| 02/21/2013 | US20130042801 Off-axis epitaxial lift off process |
| 02/14/2013 | WO2013022122A1 Group 13 element nitride film and laminate thereof |
| 02/14/2013 | WO2013021804A1 Method for peeling group 13 element nitride film |
| 02/13/2013 | CN102925976A Method using NGO monocrystal substrate to prepare a shaft REBCO high temperature superconductor thick film |
| 02/13/2013 | CN101611178B Method for manufacturing nitride single crystal |
| 01/23/2013 | EP2548999A1 Gallium nitride crystal, crystal of group 13 element nitride, crystal substrate and method for producing same |
| 01/23/2013 | CN102892933A Gallium nitride crystal, crystal of group 13 element nitride, crystal substrate and method for producing same |
| 01/23/2013 | CN102892932A Bi-substituted rare earth iron garnet single crystal, method for producing same, and optical device |
| 01/23/2013 | CN101965419B Method for growing silicon carbide single crystal |
| 01/23/2013 | CN101503825B III group nitride single crystal and semiconductor device containing the same |
| 01/16/2013 | CN102877124A Method for preparing wide-crack spacing REBCO high-temperature superconducting thick films using YBCO/LAO seed films |
| 01/16/2013 | CN102251281B Process for producing Zno single crystal according to method of liquid phase growth |
| 01/10/2013 | US20130011677 Gallium nitride crystal, group 13 nitride crystal, crystal substrate, and manufacturing method thereof |
| 01/03/2013 | DE112010000867T5 Herstellungsverfahren für SiC-Einkristall vom n-Typ, dadurch erhaltener SiC-Einkristall vomn-Typ und dessen Anwendung(7) E] Antrag auf vorzeitige Bearbeitung oder PrU Manufacturing method for SiC single crystal n-type SiC single crystal obtained therefrom vomn type and its application (7) E] request for early processing or PrU |
| 01/02/2013 | CN102856451A Semiconductor epitaxial growth substrate |
| 01/02/2013 | CN101910476B Method for growing silicon carbide single crystal |
| 12/27/2012 | WO2012176647A1 Apparatus for producing sic single crystal by solution growth method, method for producing sic single crystal using apparatus for producing sic single crystal by solution growth method, and crucible used in apparatus for producing sic single crystal by solution growth method |
| 12/27/2012 | US20120329658 Method of forming ceramic wire, system of forming the same, and superconductor wire using the same |
| 12/26/2012 | CN101319390B Preparation method of leadless lutetium bismuth carbuncle thin film |
| 12/20/2012 | WO2012173251A1 Apparatus and method for producing sic single crystal |
| 12/19/2012 | CN202610387U Thickness controllable liquid phase epitaxy film preparation device |
| 12/06/2012 | US20120304916 Method of producing silicon carbide single crystal |
| 12/05/2012 | CN101925696B Method for manufacturing iii metal nitride single crystal |
| 11/28/2012 | CN102174711B Method using high thermal stability film as MTG (melt textured growth) seed crystal to prepare high temperature superconducting material |
| 11/22/2012 | WO2012155273A1 Semiconductor formation by lateral diffusion liquid phase epitaxy |
| 11/21/2012 | EP2524979A1 Single-crystal substrate, group iii element nitride crystal obtained using same, and process for produicng group iii element nitride crystal |
| 11/21/2012 | CN102791910A Method for preparing single-crystal cubic sesquioxides and uses thereof |
| 11/14/2012 | CN102782194A Method of making an article of semiconducting material |
| 10/18/2012 | WO2012139714A1 Evaporator cell closure device for a coating plant |
| 10/18/2012 | US20120264615 Chemical solution seed layer for rabits tapes |
| 10/17/2012 | CN102732952A Liquid phase epitaxial graphite boat used for growth of ultrathin epitaxial layer |
| 10/17/2012 | CN102732951A Method for solidifying gallium-rich gallium arsenide melt used for liquid phase epitaxy |
| 10/10/2012 | EP2507418A1 Method of exocasting an article of semiconducting material |
| 10/10/2012 | CN102719886A Method for growing large-area zinc oxide micron wall |
| 10/04/2012 | US20120251431 Method for producing nitride crystal |
| 09/27/2012 | WO2012128375A1 Method for producing gallium nitride layer and seed crystal substrate used in same |
| 09/27/2012 | WO2012127703A1 Method for producing sic single crystals and production device |
| 09/27/2012 | DE112010001116T5 Verfahren zum Herstellen eines SiC-Einkristalls A method for producing an SiC single crystal |
| 09/19/2012 | CN102677162A Full-automatic control liquid phase epitaxy device and control method |
| 09/19/2012 | CN102677161A Removing method for residual liquid on back of tellurium-cadmium-mercury liquid phase epitaxial thin film |
| 09/12/2012 | EP2496736A1 Method for preparing single-crystal cubic sesquioxides and uses thereof |
| 09/05/2012 | EP2494100A1 Method of making an article of semiconducting material |
| 09/04/2012 | US8258051 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal |
| 08/29/2012 | CN101558188B Process for producing group iii elment nitride crystal, and group iii element nitride crystal |
| 08/23/2012 | US20120211769 Sic single crystal wafer and process for production thereof |
| 08/21/2012 | US8246745 Method and device for producing metal foils |
| 08/15/2012 | CN102639759A Method of exocasting an article of semiconducting material |
| 08/09/2012 | WO2012106071A1 Article and method for forming large grain polycrystalline silicon films |
| 08/09/2012 | US20120201265 Fabrication of lasing microcavities consisting of highly luminescent colloidal nanocrystals |
| 08/08/2012 | EP2484815A1 Sic single crystal and method for producing same |
| 08/02/2012 | US20120192787 Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS |
| 07/31/2012 | US8231726 Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate |
| 07/26/2012 | US20120188630 Potassium chloroborate nonlinear optical crystal, preparation method and use thereof |
| 07/25/2012 | CN101583745B Process for production of GaN crystals, GaN crystals, GaN crystal substrate, semiconductor devices, and apparatus for production of GaN crystals |
| 07/19/2012 | WO2012053782A3 Process for growing silicon carbide single crystal and device for the same |
| 07/18/2012 | CN102597337A Sic single crystal wafer and process for production thereof |
| 07/18/2012 | CN102597335A Methods of making an article of semiconducting material on a mold comprising semiconducting material |
| 07/18/2012 | CN101684568B Epitaxy method |
| 07/12/2012 | US20120174856 Method for making epitaxial structure |
| 07/12/2012 | US20120174855 Method for making epitaxial structure |
| 07/11/2012 | CN1969067B III group nitride single crystal and method for preparation thereof, and semiconductor device |
| 07/11/2012 | CN102575384A Substrate, group-3B element nitride crystals, and process for producing same |
| 07/05/2012 | WO2012090951A1 DEVICE FOR PRODUCING SiC SINGLE CRYSTALS, JIG USED IN SAID PRODUCTION DEVICE, AND METHOD OF PRODUCING SiC SINGLE CRYSTALS |
| 07/05/2012 | US20120172232 Nanorod-containing precursor powder, nanorod-containing superconductor bulk and method for manufacturing the same |
| 07/05/2012 | US20120168710 Growth and Transfer of Monolithic Horizontal Nanowire Superstructures onto Flexible Substrates |
| 07/05/2012 | US20120167817 Method and device for producing silicon blocks |
| 07/04/2012 | EP2471981A1 Sic single crystal wafer and process for production thereof |
| 07/04/2012 | CN102534780A Multiple epitaxial growth method for realizing big length-to-diameter ratio ZnO nanowire array film based on low-temperature hydrothermal method |
| 07/04/2012 | CN101984151B Di lithium tetra borate rubidium nonlinear optic crystal, preparation method and application thereof |
| 06/28/2012 | WO2012086819A1 Bi-substituted rare earth iron garnet single crystal, method for producing same, and optical device |
| 06/28/2012 | WO2012086240A1 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon |
| 06/28/2012 | WO2012086239A1 Feed material for epitaxial growth of monocrystalline silicon carbide, and method for epitaxial growth of monocrystalline silicon carbide |
| 06/28/2012 | WO2012086238A1 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |
| 06/28/2012 | WO2012086237A1 Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |
| 06/28/2012 | US20120164058 Method for manufacturing gallium nitride crystal and gallium nitride wafer |
| 06/28/2012 | US20120164057 Method for producing semiconductor crystal, apparatus for crystal production and group 13 element nitride semiconductor crystal |
| 06/28/2012 | US20120162766 Polarizer, display device and manufacturing mehtod of polarizer |
| 06/19/2012 | US8201947 Wavelength converter and green light source and projection apparatus using the same |
| 06/07/2012 | WO2012073671A1 Bismuth-substituted rare earth iron garnet crystal film and optical isolator |
| 06/07/2012 | WO2012073670A1 Bismuth-substituted rare earth iron garnet crystal film and optical isolator |
| 06/06/2012 | DE112009000196B4 Verfahren zum Wachsen eines P-SiC-Halbleitereinkristalls und P-SiC-Halbleitereinkristall A process for growing a p-type SiC semiconductor single crystal and P-type SiC semiconductor single crystal |