| Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562) |
|---|
| 06/17/2008 | US7387677 Substrate for epitaxy and method of preparing the same |
| 05/28/2008 | CN101187063A Magnetic garnet material, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible |
| 05/22/2008 | WO2008059901A1 PROCESS FOR PRODUCTION OF GaN CRYSTALS, GaN CRYSTALS, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICES, AND APPARATUS FOR PRODUCTION OF GaN CRYSTALS |
| 05/07/2008 | EP1917101A2 Method for manufacture and coating of nanostructured components |
| 04/24/2008 | WO2008048628A2 Aligned crystalline semiconducting film on a glass substrate and methods of making |
| 04/24/2008 | US20080095686 Magnetic Garnet Single Crystal and Optical Element Using Same as Well as Method of Producing Single Crystal |
| 04/17/2008 | US20080090072 Aligned crystalline semiconducting film on a glass substrate and method of making |
| 03/26/2008 | CN100376727C Method of manufacturing group-III nitride crystal |
| 03/06/2008 | US20080053369 Method for manufacturing colloidal crystals via confined convective assembly |
| 03/05/2008 | EP1895031A1 Process for producing silicon carbide single crystal |
| 02/14/2008 | WO2005053003A3 Method of production of silicon carbide single crystal |
| 02/13/2008 | CN100369203C Liquid phase epitaxial growth method for growing indium-arsenic-antimony thin film on gallium-arenic substrate |
| 02/07/2008 | DE102004048454B4 Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen A process for the production of group III-nitride bulk crystals or crystal layers of molten metal |
| 02/06/2008 | CN101118940A Built crystal substrate and liquid built crystal growing method |
| 02/05/2008 | US7326293 Patterned atomic layer epitaxy |
| 01/30/2008 | CN100365173C Method of production of silicon carbide single crystal |
| 01/23/2008 | CN101109107A Production method for controlling yttrium-barium-copper-oxygen superconducting thick film surface internal orientation growth in oxygen ambient |
| 01/23/2008 | CN101109105A Graphite boat for improving mercury cadmium telluride rheotaxy membrane surface shape |
| 01/03/2008 | DE10336110B4 Vorrichtung und Verfahren zum Behandeln eines Proteinkristalls Apparatus and methods for treating a protein crystal |
| 12/27/2007 | US20070295267 High pressure superabrasive particle synthesis |
| 12/25/2007 | US7311776 Localized synthesis and self-assembly of nanostructures |
| 12/13/2007 | WO2007075886A3 Non-spherical semiconductor nanocrystals and methods of making them |
| 12/06/2007 | US20070280872 Method of growing gallium nitride crystal and gallium nitride substrate |
| 11/22/2007 | US20070266929 Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth |
| 11/15/2007 | WO2007035570A3 Method for epitaxial growth of silicon carbide |
| 11/06/2007 | US7291223 Epitaxial organic layered structure and method for making |
| 10/30/2007 | US7288151 Method of manufacturing group-III nitride crystal |
| 10/24/2007 | CN101061263A Magnetic garnet single crystal, optical device using same and method for producing single crystal |
| 10/18/2007 | DE4320128B4 Monotyp-Lichtwellenleiter Mono-type optical waveguide |
| 10/16/2007 | US7282190 Silicon layer production method and solar cell production method |
| 10/11/2007 | WO2007113840A1 Articles with two crystalline materials and method of making same |
| 10/11/2007 | US20070234947 Nanoscale control of the spatial distribution, shape and size of thin films of conjugated organic molecules through the production of silicon oxide nanostructures |
| 09/27/2007 | US20070221122 Method for Producing Silicon Carbide (Sic) Single Crystal and Silicon Carbide (Sic) Single Crystal Obtained By Such Method |
| 09/13/2007 | US20070209573 Method for preparing silicon carbide single crystal |
| 09/13/2007 | US20070209571 Flux Assisted Solid Phase Epitaxy |
| 09/12/2007 | EP0795049B2 Epitaxial growth of silicon carbide and resulting silicon carbide structures |
| 09/07/2007 | WO2007100146A1 PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH |
| 08/23/2007 | WO2007094155A1 PROCESS FOR PRODUCING SiC SINGLE CRYSTAL |
| 08/23/2007 | US20070196942 Method for producing group III nitride crystal, group III nitride crystal obtained by such method, and group III nitride substrate using the same |
| 08/23/2007 | US20070193503 Method of fabricating polycrystalline silicon plates |
| 08/22/2007 | EP1820886A1 Magnetic garnet single crystal, optical device using same and method for producing single crystal |
| 08/21/2007 | US7258742 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus |
| 08/16/2007 | US20070187700 Method of manufacturing group III nitride substrate and semiconductor device |
| 08/16/2007 | US20070187668 Crystal substrates and methods of fabricating the same |
| 08/16/2007 | US20070186846 Non-spherical semiconductor nanocrystals and methods of making them |
| 08/16/2007 | US20070186844 Production of high-purity, large-volume monocrystals that are especially radiation-resistant from crystal shards |
| 08/15/2007 | EP1818430A1 Iii group nitride single crystal and method for preparation thereof, and semiconductor device |
| 08/15/2007 | CN1332073C Sliding mechanism of semiconductor material growing system |
| 08/14/2007 | US7255742 Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device |
| 08/08/2007 | EP1816239A2 Method of producing optical element |
| 08/02/2007 | US20070175384 Method of fabricating a quasi-substarte wafer and semiconductor body fabricated using such a quasi-substarte wafer |
| 08/02/2007 | US20070175383 Process for producing single crystal of gallium-containing nitride |
| 08/01/2007 | CN101008105A Repair method of crystalline structures by epitaxy |
| 07/26/2007 | WO2007083768A1 Semiconductor light emitting element, group iii nitride semiconductor substrate and method for manufacturing such group iii nitride semiconductor substrate |
| 07/26/2007 | US20070169683 Nitrogen-doped silicon substantially free of oxidation induced stacking faults |
| 07/12/2007 | US20070160501 Device and method for treating a crystal by applying microdrops thereto |
| 07/11/2007 | EP1806755A1 Magnetic garnet single crystal and method for producing the same as well as optical element using the same |
| 07/11/2007 | EP1806439A1 METHOD FOR PRODUCING AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL |
| 07/11/2007 | EP1806437A1 Method for preparing silicon carbide single crystal |
| 07/11/2007 | EP1805354A1 Method for the production of group iii nitride bulk crystals or crystal layers from fused metals |
| 07/05/2007 | WO2007075886A2 Non-spherical semiconductor nanocrystals and methods of making them |
| 07/05/2007 | US20070151506 Liquid crystal display device |
| 07/05/2007 | US20070151505 Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby |
| 07/05/2007 | DE10392847B4 Preparation of thin silicon sheets used in solar batteries comprises impregnating the surface layer of an under sheet in a molten solution containing metal material or semiconductor material in the main chamber of a crucible |
| 07/04/2007 | EP1802553A2 Method for increasing the conversion of group iii metals to group iii nitrides in a fused metal containing group iii elements |
| 07/04/2007 | CN1324657C Thin sheet production method and thin sheet production device |
| 06/21/2007 | US20070137555 Deposition of low resistivity, highly conformal tungsten nucleation layers which serve as seed layers for the deposition of a tungsten bulk layer; process is performed without the use of a borane as a reducing agent |
| 06/14/2007 | US20070131159 Method for epitaxial growth with selectivity |
| 06/14/2007 | US20070131158 Method for manufacturing single crystal semiconductor |
| 05/31/2007 | US20070119365 Silicon single crystal pulling method |
| 05/29/2007 | US7223305 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electric circuit, and electronic apparatus |
| 05/24/2007 | US20070113778 Epitaxial silicon wafer |
| 05/23/2007 | CN1969067A III group nitride single crystal and method for preparation thereof, and semiconductor device |
| 05/22/2007 | US7221037 Method of manufacturing group III nitride substrate and semiconductor device |
| 05/10/2007 | US20070105349 Epitaxial semiconductor structures having reduced stacking fault nucleation sites |
| 05/10/2007 | US20070104639 Method for manufacturing garnet single crystal and garnet single crystal manufactured thereby |
| 05/10/2007 | US20070101930 Feature forming methods to reduce stacking fault nucleation sites |
| 04/26/2007 | US20070089668 Epitaxial growth of structures with nano-dimensional features from liquid phase by pulse cooling of substrate |
| 04/25/2007 | CN1312781C Method for mfg. semiconductor structural component and method for mfg. solar cell |
| 03/06/2007 | US7186578 Thin sheet production method and thin sheet production device |
| 02/28/2007 | CN1922345A Method of manufacturing compound single crystal and apparatus for manufacturing it |
| 02/28/2007 | CN1920120A Thin sheet production method and thin sheet production device |
| 02/22/2007 | US20070042127 Film growth at low pressure mediated by liquid flux and induced by activated oxygen |
| 02/15/2007 | US20070034139 Method for analyzing impurities (color centers) of fluoride and process for producing material for growing single crystal |
| 02/08/2007 | US20070031983 Thin plate manufacturing method and thin plate manufacturing apparatus |
| 02/06/2007 | US7173285 Lithographic methods to reduce stacking fault nucleation sites |
| 01/24/2007 | CN1296527C Method for producing crystal thin plate and solar cell comprising crystal thin plate |
| 01/17/2007 | CN1898778A Method for producing group iii nitride crystal, group iii nitride crystal obtained by such method, and group iii nitride substrate using same |
| 01/16/2007 | US7164187 Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device |
| 01/09/2007 | US7160820 Method of preparing oxide crystal film/substrate composite and solution for use therein |
| 01/04/2007 | US20070000430 Liquid crystal display device and fabrication method threof |
| 12/28/2006 | US20060292057 Method of production of silicon carbide single crystal |
| 12/28/2006 | US20060288925 Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element |
| 12/27/2006 | EP1736570A1 Method of solid-phase flux epitaxy growth |
| 12/14/2006 | US20060278158 Ordered vertically oriented porous inorganic films produced through solution processing |
| 12/13/2006 | CN1878892A Method for preparing garnet single crystal and garnet single crystal prepared thereby |
| 11/29/2006 | EP1726036A1 Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites |
| 11/15/2006 | CN1863945A Method of production of silicon carbide single crystal |
| 11/14/2006 | US7135070 Monolithic stacked/layered crystal-structure-processed mechanical, and combined mechanical and electrical, devices and methods and systems for making |
| 10/31/2006 | US7128783 Thin-film crystal-structure-processed mechanical devices, and methods and systems for making |