| Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562) |
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| 05/05/2011 | DE10297102B4 Vorrichtung und Verfahren zum Herstellen einer dünnen Platte Apparatus and method for manufacturing a thin plate |
| 05/03/2011 | US7935325 Rare earth-activated aluminum nitride powders and method of making |
| 04/21/2011 | WO2011046203A1 Substrate, group-3b element nitride crystals, and process for producing same |
| 04/21/2011 | US20110089431 Compound single crystal and method for producing the same |
| 04/21/2011 | DE112009001014T5 AlxGa(1-x)As-Substrat, Epitaxialwafer für Infrarot-LEDs, Infrarot-LED, Verfahren zur Herstellung eines AlxGa(1-x)AS-Substrats, Verfahren zur Herstellung eines Epitaxialwafers für Infrarot-LEDs und Verfahren zur Herstellung von Infrarot-LEDs Al x Ga (1-x) As substrate, epitaxial wafer for infrared LEDs, infrared LEDs, process for preparing a Al x Ga (1-x) As substrate, process for producing an epitaxial wafer for infrared LEDs and method for the production of infrared LEDs |
| 04/20/2011 | CN101319380B Method for rare earth 242 phase control component for growing superconducting block material |
| 04/13/2011 | CN102016136A AlxGa(1-x)As substrate, epitaxial wafer for infrared leds, infrared led, method of manufacturing AlxGa(1-x)as substrate, method of manufacturing epitaxial wafer for infrared leds, and method of manufacturing infrared leds |
| 04/12/2011 | US7923098 Low-defect-density crystalline structure and method for making same |
| 04/07/2011 | WO2011040240A1 Sic single crystal and method for producing same |
| 04/07/2011 | DE112009001297T5 ALXGA(1-X)AS-Substrat, Epitaxialwafer für Infrarot-LED, Infrarot-LED, Verfahren zur Herstellung eines ALXGA(1-X) AS-Substrats, Verfahren zur Herstellung eines Epitaxialwafers für eine Infrarot-LED und Verfahren zur Herstellung einer Infrarot-LED Al x Ga (1-x) As substrate, epitaxial wafer for infrared LED, infrared LED, methods for the preparation of a Al x Ga (1-x) As substrate, process for producing an epitaxial wafer for an infrared LED and methods of manufacturing an infra -LED |
| 03/23/2011 | CN101061263B Magnetic garnet single crystal, optical device using same and method for producing single crystal |
| 03/09/2011 | CN101984151A Di lithium tetra borate rubidium nonlinear optic crystal, preparation method and application thereof |
| 03/03/2011 | WO2011024931A1 Sic single crystal wafer and process for production thereof |
| 03/03/2011 | US20110049542 AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs |
| 02/24/2011 | DE112009000195T5 Verfahren zum Herstellen eines III-Metall-Nitrid-Einkristalls A method of preparing a group III metal nitride single crystal |
| 02/23/2011 | CN101981237A AlxGa(1-x)As substrate, epitaxial wafer for infrared LED, infrared LED, method for production of AlxGa(1-x)As substrate, method for production of epitaxial wafer for infrared LED, and method for production of infrared LED |
| 02/22/2011 | US7892355 Preparation of single-crystalline polyalkylthiophene structures by surface-induced self-assembly |
| 02/16/2011 | CN101978102A Process for producing zno single crystal, self-supporting zno single-crystal wafer obtained by the same, self-supporting wafer of mg-containing zno mixed single crystal, and process for producing mg-containing zno mixed single crystal for use in the same |
| 02/10/2011 | US20110030610 High-productivity porous semiconductor manufacturing equipment |
| 02/10/2011 | DE112009000360T5 Verfahren zum Wachsen eines Siliziumkarbideinkristalls A method for growing a silicon carbide single crystal |
| 02/02/2011 | CN101965419A Method for growing silicon carbide single crystal |
| 01/27/2011 | DE112009000196T5 Verfahren zum Wachsen eines P-SiC-Halbleitereinkristalls und P-SiC-Halbleitereinkristall A process for growing a p-type SiC semiconductor single crystal and P-type SiC semiconductor single crystal |
| 01/26/2011 | EP2278049A1 Apparatus for manufacturing Group III Nitride Crystals |
| 01/26/2011 | CN101960056A AlxGa(1-x)As substrate, epitaxial wafer for infrared LED, infrared LED, method for production of AlxGa(1-x)As substrate, method for production of epitaxial wafer for infrared LED, and method for production of infrared LED |
| 01/25/2011 | US7875115 Epitaxial wafer and method for producing epitaxial wafers |
| 01/20/2011 | WO2011007457A1 Process for producing sic single crystal |
| 01/20/2011 | US20110012233 Group iii nitride crystal substrate, epilayer-containing group iii nitride crystal substrate, semiconductor device and method of manufacturing the same |
| 01/05/2011 | DE112009000328T5 Verfahren zum Aufwachsen eines Siliziumcarbideinkristalls A method for growing a silicon carbide single crystal |
| 12/30/2010 | US20100327292 Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates |
| 12/29/2010 | EP2267193A1 Process for producing zno single crystal, self-supporting zno single-crystal wafer obtained by the same, self-supporting wafer of mg-containing zno mixed single crystal, and process for producing mg-containing zno mixed single crystal for use in the same |
| 12/29/2010 | CN101932757A Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal |
| 12/22/2010 | CN101925696A Method for manufacturing iii metal nitride single crystal |
| 12/09/2010 | WO2010140665A1 Process and apparatus for production of crystals of compound of metal belonging to group-13 on periodic table |
| 12/09/2010 | WO2010140426A1 MULTILAYER ZnO SINGLE CRYSTAL SCINTILLATOR AND METHOD FOR MANUFACTURING SAME |
| 12/09/2010 | US20100307404 Method for manufacturing III metal nitride single crystal |
| 12/08/2010 | EP2259295A1 Epitaxial substrate for smeiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element |
| 12/08/2010 | CN101910476A Method for growing silicon carbide single crystal |
| 11/18/2010 | WO2010132651A1 Methods of making an article of semiconducting material on a mold comprising semiconducting material |
| 11/18/2010 | WO2010130963A1 Method of nanostructuring a film or a wafer of material of the metal oxide or semi-conductor type |
| 11/16/2010 | US7833346 Method and apparatus for manufacturing group III nitride crystals |
| 11/04/2010 | WO2010125674A1 METHOD FOR FABRICATING SiC SUBSTRATE |
| 10/21/2010 | WO2010118640A1 Method and apparatus for preparing thin films using continuous liquid phase epitaxy |
| 10/21/2010 | US20100263586 LOW TEMPERATURE CONTINUOUS CIRCULATION REACTOR FOR THE AQUEOUS SYNTHESIS OF ZnO FILMS, NANOSTRUCTURES, AND BULK SINGLE CRYSTALS |
| 09/21/2010 | US7799158 Method for producing crystallographically-oriented ceramic |
| 09/16/2010 | WO2010103387A1 Method of producing sic single crystal |
| 09/16/2010 | US20100230713 Semiconductor light emitting element, group iii nitride semiconductor substrate and method for manufacturing such group iii nitride semiconductor substrate |
| 09/16/2010 | US20100229786 Method for Growing Group III Nitride Crystal |
| 08/26/2010 | WO2010095021A1 Production method of n-type sic single crystal, n-type sic single crystal obtained thereby and application of same |
| 08/26/2010 | US20100213448 Method of producing a single-crystal thin film of an organic semiconductor compound |
| 08/25/2010 | CN101815816A Method for growing group III nitride crystal |
| 08/19/2010 | US20100209686 Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS |
| 08/19/2010 | US20100206215 Method for producing single-crystal thin film |
| 08/12/2010 | US20100203350 Methods and Apparatuses for Manufacturing Cast Silicon from Seed Crystals |
| 08/10/2010 | US7771643 Methods of making an unsupported article of semiconducting material by controlled undercooling |
| 08/05/2010 | US20100193031 Methods and Apparatuses for Manufacturing Cast Silicon From Seed Crystals |
| 08/05/2010 | US20100192839 Process for producing group iii element nitride crystal and apparatus for producing group iii element nitride crystal |
| 07/29/2010 | WO2010084681A1 Group iiib nitride crystal manufacturing method |
| 07/21/2010 | CN101387006B Film pulling-up apparatus |
| 07/20/2010 | US7758766 Magnetic garnet single crystal and Faraday rotator using the same |
| 07/15/2010 | WO2009095764A8 Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal |
| 06/30/2010 | CN101760777A Device for manufacturing thin film by liquid phase epitaxial method |
| 06/30/2010 | CN101760776A Substrate clamp for manufacturing thin film by liquid phase epitaxial method |
| 06/30/2010 | CN101760775A Method and device for preparing thin film by continuous liquid phase epitaxial method |
| 06/17/2010 | US20100147210 high pressure apparatus and method for nitride crystal growth |
| 06/16/2010 | CN101743346A Method for producing group iii nitride single crystal |
| 06/10/2010 | US20100139551 Method for preparing crystal of nitride of metal belonging to 13 group of periodic table and method for manufacturing semiconductor device using the same |
| 06/09/2010 | EP2194169A1 Method for growing group iii nitride crystal |
| 05/27/2010 | US20100129996 Silicon material surface etching for large grain polysilicon thin film deposition and structure |
| 05/04/2010 | US7708831 Process for producing ZnO single crystal according to method of liquid phase growth |
| 04/15/2010 | DE10362171B4 Verfahren und Vorrichtung zum Herstellen einer dünnen Lage Method and apparatus for producing a thin layer |
| 03/31/2010 | CN101688325A Mg-containing Zno mixed single crystal, laminate thereof and their production methods |
| 03/31/2010 | CN101684568A Epitaxy method |
| 03/11/2010 | US20100062266 Method for growing epitaxy |
| 03/11/2010 | US20100059717 GaN CRYSTAL PRODUCING METHOD, GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND GaN CRYSTAL PRODUCING APPARATUS |
| 03/04/2010 | WO2010024392A1 Manufacturing method for silicon carbide monocrystals |
| 03/04/2010 | WO2010024390A1 METHOD AND APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL FILM |
| 03/04/2010 | US20100050929 Coil Arrangement for Crystal Pulling and Method of Forming a Crystal |
| 01/21/2010 | WO2010007983A1 Method for growing gan crystal |
| 01/14/2010 | WO2010005914A1 High quality large area bulk non-polar or semipolar gallium based substrates and methods |
| 01/05/2010 | US7641988 Comprises an epitaxial nitride layer with a light-emitting device structure formed on the above self-supported nitride semiconductor substrate; having large light emission with a low driving voltage; gallium nitride |
| 12/30/2009 | WO2009157347A1 Method for growing nitride single crystal |
| 12/29/2009 | US7637998 Method for producing single crystal silicon carbide |
| 12/24/2009 | US20090315150 III-Nitride Crystal Manufacturing Method, III-Nitride Crystal Substrate, and III-Nitride Semiconductor Device |
| 12/23/2009 | EP2135979A1 Method for manufacturing nitride single crystal |
| 12/23/2009 | EP2135978A1 Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS |
| 12/23/2009 | CN101611178A Method for manufacturing nitride single crystal |
| 12/10/2009 | WO2009147976A1 ALxGa(1-x)As SUBSTRATE, EPITAXIAL WAFER FOR INFRARED LED, INFRARED LED, METHOD FOR PRODUCTION OF ALxGa(1-x)As SUBSTRATE, METHOD FOR PRODUCTION OF EPITAXIAL WAFER FOR INFRARED LED, AND METHOD FOR PRODUCTION OF INFRARED LED |
| 12/10/2009 | WO2009147975A1 Alxga(1-x)as substrate, epitaxial wafer for infrared led, infrared led, method for production of alxga(1-x)as substrate, method for production of epitaxial wafer for infrared led, and method for production of infrared led |
| 12/10/2009 | WO2009147974A1 Alxga(1-x)as substrate, epitaxial wafer for infrared led, infrared led, method for production of alxga(1-x)as substrate, method for production of epitaxial wafer for infrared led, and method for production of infrared led |
| 12/10/2009 | US20090301388 Capsule for high pressure processing and method of use for supercritical fluids |
| 12/10/2009 | US20090301387 High pressure apparatus and method for nitride crystal growth |
| 12/02/2009 | EP2128309A1 Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device |
| 12/02/2009 | CN100564616C Method of manufacturing compound single crystal and apparatus for manufacturing it |
| 11/26/2009 | DE102004020058B4 Verfahren zum Abscheiden einer Schicht aus einer Formgedächtnislegierung A method of depositing a layer of a shape memory alloy |
| 11/25/2009 | CN101586252A Rheotaxial graphite boat preventing mother solution residual |
| 11/19/2009 | US20090286352 Diamond Bodies Grown on SIC Substrates and Associated Methods |
| 11/18/2009 | CN101583745A Process for production of GaN crystals, GaN crystals, GaN crystal substrate, semiconductor devices, and apparatus for production of GaN crystals |
| 11/10/2009 | US7615115 Liquid-phase growth apparatus and method |
| 10/29/2009 | WO2009130996A1 Melting furnace |
| 10/29/2009 | US20090266294 Method and device for feeding arsenic dopant into a silicon crystal growing apparatus |