| Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562) |
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| 11/21/1978 | US4126731 Sapphire single crystal substrate for semiconductor devices |
| 10/31/1978 | US4123302 Method for depositing epitaxial semiconductor from the liquid phase |
| 10/31/1978 | CA1041646A1 Semiconductor-liquid phase epitaxial growth method |
| 10/10/1978 | US4118857 Flipped method for characterization of epitaxial layers |
| 09/26/1978 | US4116751 Methods and apparatus for producing unsupported monocrystalline films of silicon and of other materials |
| 09/19/1978 | US4115162 Process for the production of epitaxial layers on monocrystalline substrates by liquid-phase-slide epitaxy |
| 09/12/1978 | US4113548 Process for the production of silicon layers |
| 09/12/1978 | US4113513 Method of manufacturing a semiconductor device by non-selectively implanting a zone of pre-determined low resistivity |
| 08/29/1978 | US4110133 Growth of semiconductor compounds by liquid phase epitaxy |
| 07/18/1978 | US4101925 Centrifugal forming thin films and semiconductors and semiconductor devices |
| 06/20/1978 | US4096024 Crystal growth |
| 06/06/1978 | US4093781 Epitaxial, sodium-substituted lithium ferrite films |
| 05/30/1978 | US4092208 Method of growing single crystals of rare earth metal iron garnet materials |
| 05/09/1978 | US4088515 Method of making semiconductor superlattices free of misfit dislocations |
| 05/09/1978 | US4088514 Groups 3-5 metals |
| 03/21/1978 | US4080478 Method for producing an InSb thin film |
| 03/07/1978 | US4077832 Epitaxial growth of bismuth rare earth iron garnet from a flux of bismuth oxide and alkali metal oxide |
| 02/14/1978 | US4073676 GaAs-GaAlAs semiconductor having a periodic corrugation at an interface |
| 02/14/1978 | US4073675 Waveguiding epitaxial LiNbO3 films |
| 02/07/1978 | US4072544 Electronic devices |
| 12/20/1977 | US4063972 Method for growing epitaxial layers on multiple semiconductor wafers from liquid phase |
| 11/08/1977 | US4057458 Method of making nickel zinc ferrite by liquid-phase epitaxial growth |
| 10/11/1977 | US4053334 Method for independent control of volatile dopants in liquid phase epitaxy |
| 10/04/1977 | US4052252 Semiconductor |
| 09/27/1977 | US4050964 Growing smooth epitaxial layers on misoriented substrates |
| 07/19/1977 | US4036932 Liberated nitrogen incorporated into crystal lattice |
| 07/12/1977 | US4035205 Epitaxial deposition in solution, electroluminescent devices |
| 07/05/1977 | US4033291 Apparatus for liquid-phase epitaxial growth |
| 06/28/1977 | US4032951 Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses |
| 06/28/1977 | US4032370 Method of forming an epitaxial layer on a crystalline substrate |
| 06/21/1977 | US4030949 Method of effecting liquid phase epitaxial growth of group III-V semiconductors |
| 06/07/1977 | US4028148 Method of epitaxially growing a laminate semiconductor layer in liquid phase |
| 05/31/1977 | US4026735 Method for growing thin semiconducting epitaxial layers |
| 05/31/1977 | US4026240 Liquid phase epitaxial reactor apparatus |
| 05/10/1977 | US4022652 Method of growing multiple monocrystalline layers |
| 04/19/1977 | US4018692 Composition for making garnet films for improved magnetic bubble devices |
| 04/12/1977 | US4016829 Apparatus for crystal growth |
| 03/22/1977 | US4013040 Apparatus for epitaxially growing a laminate semiconductor layer in liquid phase |
| 03/15/1977 | US4012242 Liquid epitaxy technique |
| 02/01/1977 | US4006040 Semiconductor device manufacture |
| 01/25/1977 | US4004953 Method for growing crystals of III-V compound semiconductors |
| 01/04/1977 | US4001076 Alkali metal, niobium and tantalum oxides |
| 12/21/1976 | US3998687 On lithium tantalate substrate using flux system |
| 12/21/1976 | US3998662 Molten metal |
| 12/14/1976 | US3997377 Method of making a liquid phase epitaxial-layers of gallium phosphide on multiple wafers |
| 12/14/1976 | US3996891 Liquid phase epitaxial growth apparatus wherein contacted wafer floats |
| 11/23/1976 | US3993963 Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same |
| 11/23/1976 | US3993511 High temperature electrical contact for Peltier-induced liquid phase epitaxy on intermetallic III-V compounds of gallium |
| 11/09/1976 | US3990902 Magnesium aluminate |
| 11/09/1976 | US3990392 Epitaxial growth apparatus |
| 10/05/1976 | US3984261 Ohmic contact |
| 09/21/1976 | US3981764 III-V Compound semi-conductor crystal growth from a liquid phase on a substract including filtering liquid phase |
| 08/03/1976 | US3972753 Semiconductor |
| 06/01/1976 | US3960618 Epitaxial growth process for compound semiconductor crystals in liquid phase |
| 05/25/1976 | US3959006 Neodymium)-(calcium, strontium or magnesium)-(zirconium or tin)-oxygen |
| 04/13/1976 | US3950195 Lpe technique for reducing edge growth |
| 04/06/1976 | US3948692 Method of preparing multi-layer semiconductor hetero-structures on the basis of compounds AIII BV where AIII is a metal of group three and BV is a non-metal of group five |
| 03/30/1976 | US3947548 Process of growing single crystals of gallium phosphide |
| 02/24/1976 | US3940296 Method for growing epitaxial layers from the liquid phase |
| 01/20/1976 | US3933539 Solution growth system for the preparation of semiconductor materials |
| 01/20/1976 | US3933538 Molten metallic solvent, single crystal |
| 01/20/1976 | US3933123 Liquid phase epitaxy |