Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method
Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
03/2010
03/25/2010WO2010033304A2 Solar cells fabricated by using cvd epitaxial si films on metallurgical-grade si wafers
03/25/2010US20100075267 Silicon wafer heat treatment method
03/25/2010US20100071613 Method and apparatus for manufacturing fused silica crucible, and the fused silica crucible
03/25/2010US20100071612 Method for manufacturing single crystal
03/25/2010DE102009034076A1 Verfahren zur in-situ-Bestimmung von thermischen Gradienten an der Kristallwachstumsfront A method for in-situ determination of the thermal gradient at the crystal growth front
03/24/2010CN201428007Y Cross section moulding structure in pulling crystal bar
03/24/2010CN101676444A Erbium ytterbium co-doped lithium gadolinium molybdate laser crystal and preparation method and application thereof
03/24/2010CN101676443A Neodymium-doped cesium lanthanum tungstate laser crystal and preparation method and application thereof
03/24/2010CN101676440A Device for pulling a single crystal
03/24/2010CN100595351C Interstitial atoms based silicon with low defect density
03/24/2010CN100595350C Single-crystal furnace guide shell and production process thereof
03/23/2010US7682452 Apparatus and methods of growing void-free crystalline ceramic products
03/18/2010US20100065778 Dense high-speed scintillator material of low afterglow
03/18/2010US20100064965 Device for pulling a single crystal
03/18/2010US20100064964 Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereof
03/17/2010EP2163529A1 Apparatus for the production of silica crucible
03/17/2010EP2162572A1 Method and apparatus for growing a ribbon crystal with localized cooling
03/17/2010EP2162571A1 Device and method for producing crystals from electroconductive melts
03/17/2010EP2162570A2 Device for producing crystals from electroconductive melts
03/17/2010CN201424520Y CZ czochralski method single crystal furnace graphite thermal field structure
03/17/2010CN201424519Y CZ czochralski method single crystal furnace
03/17/2010CN101671845A Y, Sc, Gd and La silicate mischcrystal doped with Yb, lanthanum silicate crystal and melt method growth method thereof
03/17/2010CN101671844A Ca, Mg, Zr, Gd and Ga garnet doped with Sm and melt method crystal growth method thereof
03/17/2010CN101671843A Semiconductor wafer composed of monocrystalline silicon and method for producing
03/17/2010CN101671841A Method for preparing nitrogenous dopant for preparing czochralski silicon single crystal
03/11/2010WO2010028103A2 String with refractory metal core for string ribbon crystal growth
03/11/2010WO2010027702A1 High temperature support apparatus and method of use for casting materials
03/11/2010WO2010027698A1 Apparatus and method of use for casting system with independent melting and solidification
03/11/2010WO2010026342A1 Process for forming a non-stick coating based on silicon carbide
03/11/2010US20100058977 Single crystal seed
03/11/2010DE102008046617A1 Halbleiterscheibe aus einkristallinem Silizium und Verfahren für deren Herstellung Semiconductor wafer made of monocrystalline silicon and methods for their preparation
03/10/2010CN201421252Y Flat-bottom quartz crucible
03/10/2010CN201420111Y Crucible mold with ring-shaped cover body
03/10/2010CN201420043Y Quartz crucible high-temperature forming system
03/10/2010CN101665977A Thermal shield device for crystal pulling furnace
03/04/2010WO2010025107A1 Systems and methods for monitoring a solid-liquid interface
03/04/2010WO2010025057A1 Method and device for continuously measuring silicon island elevation
03/04/2010WO2010024541A2 Apparatus and method for manufacturing an ingot
03/04/2010WO2010022861A1 Coil arrangement for crystal pulling and method of forming a crystal
03/04/2010US20100055412 String With Refractory Metal Core For String Ribbon Crystal Growth
03/04/2010US20100050931 Method for manufacturing single crystal
03/04/2010US20100050930 Crucible For A Crystal Pulling Apparatus
03/03/2010EP2159828A2 Silicon wafer and method for producing the same
03/03/2010EP2159827A2 Silicon wafer and method for producing the same
03/03/2010CN101660199A Apparatus for the production of silica crucible
03/03/2010CN101660198A High-precision automatic photoelectric crystal pulling furnace
03/03/2010CN101660197A Method for preparing single crystal rod by utilizing low-purity silicon
03/03/2010CN101660196A Method and device for prolonging service life of single crystal fire grate gas port heat holding cover
03/03/2010CN101660195A Crystal pulling rod of crystal growth furnace
02/2010
02/25/2010WO2010021967A1 Controlling transport of gas borne contaminants across a ribbon surface
02/25/2010WO2010021272A1 Processes for production of silicon ingot, silicon wafer and epitaxial wafer, and silicon ingot
02/25/2010DE102008038810A1 Verfahren zur Herstellung eines Eiskristalls aus Halbleitermaterial A process for producing an ice crystal of semiconductor material
02/24/2010EP2157051A2 Harvest apparatus for harvesting polycrystalline silicon rods, combined apparatus and method of using the same
02/24/2010CN201411511Y Graphite electrode for direct crystal-pulling furnace thermal field
02/24/2010CN201411510Y Birdcage-structured resistance heating element of single crystal furnace for growth of big size sapphire
02/24/2010CN201411509Y Single crystal furnace body for growth of big sapphire with size over 300 mm
02/24/2010CN201411508Y Single crystal pulling furnace
02/24/2010CN101654804A Method for controlling specific resistance of gallium-doped Czochralski silicon in crystal growth process
02/18/2010US20100038652 Light emitting element and method of making same
02/17/2010EP2152942A1 Removable thermal control for ribbon crystal pulling furnaces
02/17/2010EP2152941A1 Ribbon crystal pulling furnace afterheater with at least one opening
02/17/2010CN201406481Y Silicon single crystal furnace crystal-bar bracket
02/17/2010CN101652504A Method for protecting carbonaceous crucible and single crystal pulling apparatus
02/17/2010CN101649486A Device and method for growing terbium gallium garnet (TGG) crystal by pulling method
02/16/2010US7662231 Cord rotating head for a crystal drawing system
02/11/2010WO2010017389A1 Generating a pumping force in a silicon melt by applying a time-varying magnetic field
02/11/2010WO2010016586A1 Method for manufacturing semiconductor wafer
02/11/2010US20100031871 Doping apparatus and method for manufacturing silicon single crystal
02/11/2010US20100031870 Generating a pumping force in a silicon melt by applying a time-varying magnetic field
02/11/2010US20100031869 System for Manufacturing Silicon Single Crystal and Method for Manufacturing Silicon Single Crystal Using this System
02/11/2010DE112008000491T5 Dotierungsmittel-Injektionsverfahren und Dotierungsvorrichtung Dopant injection method and device doping
02/10/2010CN101643933A CZ method silicon single crystal growth furnace quartz crucible carbon protection crucible and manufacturing process thereof
02/10/2010CN101643932A Low texture pyrolysis born nitride (PBN) thin-wall container and preparation method thereof
02/10/2010CN101643931A Raw material conveying device for single crystal furnace
02/09/2010CA2560998C Single crystals and methods for fabricating same
02/04/2010WO2010013719A1 Silicon single crystal pull-up apparatus
02/04/2010WO2010013718A1 Silicon single crystal pull-up apparatus
02/04/2010US20100028240 Process for producing silicon carbide single crystal
02/04/2010US20100024718 Procedure for in-situ determination of thermal gradients at the crystal growth front
02/04/2010US20100024717 Reversed action diameter control in a semiconductor crystal growth system
02/04/2010US20100024716 Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
02/04/2010DE112008000877T5 Einkristall-Zuchtverfahren und Ziehvorrichtung für Einkristalle Single-crystal growth method and device for pulling single crystals
02/04/2010DE112007002987T5 System und Verfahren zur Ausbildung eines Kristalls System and method for forming a crystal
02/03/2010EP2149627A1 Quartz glass crucible for silicon single crystal pulling operation and process for manufacturing the same
02/03/2010CN201395648Y Thermal field for growing silicon single crystal
02/03/2010CN201395647Y Heat apparatus for growing silicon single crystal
02/03/2010CN201395646Y Silicon nitride ceramic integral crucible
02/03/2010CN201395645Y Plate turning box of anticorrosion mono-crystal furnace
02/03/2010CN201395644Y Upper furnace body of anticorrosion mono-crystal furnace
02/03/2010CN201395643Y Cooling structure of upper furnace body of mono-crystal furnace
02/03/2010CN201395642Y Cooling structure of mono-crystal furnace cover
02/03/2010CN201395641Y Lower furnace body of mono-crystal furnace
02/03/2010CN201395640Y Lower furnace body structure of mono-crystal furnace
02/03/2010CN201395639Y Filtration structure of mono-crystal furnace cover
02/03/2010CN201395638Y Auxiliary furnace of mono-crystal furnace
02/03/2010CN201395637Y Cooling structure of plate turning box of mono-crystal furnace
02/02/2010US7655091 Formation of single-crystal silicon carbide
02/02/2010US7655089 Process and apparatus for producing a single crystal of semiconductor material
01/2010
01/28/2010WO2010009597A1 Doped low temperature phase bab2o4 single crystal, the manufacturing method thereof and wave changing elements therefrom
01/28/2010WO2010009581A1 A doped low temperature phase barium metaborate single crystal, growth method and frequency converter thereof
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