Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method
Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
07/2010
07/14/2010CN101213328B Crucible for the crystallization of silicon and its preparation method
07/08/2010WO2010078205A1 Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt
07/08/2010WO2010078019A2 Method of impregnating crucibles and refractory articles
07/08/2010WO2010077639A2 Improved axial gradient transport (agt) growth process and apparatus utilizing resistive heating
07/08/2010US20100170432 Apparatus for pulling silicon single crystal
07/08/2010DE112008002237T5 Verfahren zur Erfassung des Durchmessers eines Einkristalls und Einkristallziehvorrichtung A method for detecting the diameter of a single crystal and single crystal
07/08/2010CA2748523A1 Method of impregnating crucibles and refractory articles
07/07/2010EP2204476A2 Silicon wafer and method of manufacturing the same
07/07/2010EP2203395A1 Quartz glass crucible and method for treating surface of quartz glass crucible
07/07/2010CN201520815U Double floating graphite crucible
07/07/2010CN101772595A Method for detecting the diameter of a single crystal and single crystal pulling apparatus
07/07/2010CN101768780A Indium cerium iron triple-doped lithium niobate crystal and preparation method thereof
07/07/2010CN101768778A Self-activation crystal neodymium phosphate and preparation method thereof
07/07/2010CN101768776A Silicon wafer and method for producing the same
07/07/2010CN101768774A Method for increasing charging capacity of single crystal furnace
07/07/2010CN101767598A Automatic single crystal bar loading and unloading carriage
07/06/2010US7749865 Method for producing semiconductor wafers and a system for determining a cut position in a semiconductor ingot
07/06/2010US7749324 Casting method of silicon ingot and cutting method of the same
07/01/2010WO2010073945A1 Process for producing single-crystal sapphire
07/01/2010WO2010024541A3 Apparatus and method for manufacturing an ingot
07/01/2010US20100164071 Silicon wafer and method for producing the same
07/01/2010US20100162946 System for continuous growing of monocrystalline silicon
07/01/2010US20100162944 Method for manufacturing silicon single crystal
07/01/2010US20100162943 Silica glass crucible and method of pulling silicon single cyrsal with silica glass crucible
06/2010
06/30/2010EP2202335A1 Quartz glass crucible for pulling silicon single crystal and method for manufacturing the crucible
06/30/2010CN101760784A Seed crystal position real-time adjustable mechanism
06/30/2010CN101760783A Crucible cover plate capable of adjusting temperature gradient of solid-liquid interface
06/30/2010CN101760774A Post-heater for reduction of internal thermal stress of crystal grown in Czochralski method
06/30/2010CN101760773A Monocrystal-pulling insulated feeding method and device thereof
06/30/2010CN101759347A Quartz crucible barium-coated process and product thereof
06/29/2010US7744696 Method for preparing borate-based crystal and laser oscillation apparatus
06/24/2010WO2010071142A1 Process for producing single-crystal sapphire
06/24/2010US20100158783 Process and Apparatus for Producing a Single Crystal of Semiconductor Material
06/24/2010US20100154703 Silica glass crucible
06/24/2010US20100154702 Surface modified quartz glass crucible, and its modification process
06/24/2010US20100154701 Silica crucible with pure and bubble free inner crucible layer and method of making the same
06/23/2010CN201512606U Integrated heat-shielding lifting appliance
06/23/2010CN201512605U Novel weighing structure for crystal oven
06/23/2010CN201512604U Single crystal furnace limiting device
06/23/2010CN201512603U Graphite gas guiding sleeve applied in thermal field
06/23/2010CN201512602U Single crystal furnace
06/23/2010CN201512601U System used in thermal field of cz-si single crystal furnace
06/23/2010CN101755076A Ribbon crystal pulling furnace afterheater with at least one opening
06/23/2010CN101748483A Germanium melt dross removing device and method
06/23/2010CN101748481A Method for purifying polycrystalline silicon material
06/23/2010CN101748479A Method for measuring position of melt silicone liquid level and device
06/23/2010CN101748478A Method for measuring horizontal plane relative height of silicon melt in crucible
06/23/2010CN101748477A Intelligent PID control method for controlling growth process of monocrystalline silicon and system thereof
06/17/2010US20100147213 Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof
06/17/2010US20100147209 Polycrystalline Germanium-Alloyed Silicon And A Method For The Production Thereof
06/17/2010DE112008001913T5 Halbleitereinkristallproduktionsvorrichtung Semiconductor single crystal production device
06/17/2010DE102004039197B4 Verfahren zur Herstellung von dotierten Halbleiterscheiben aus Silizium A process for the production of doped semiconductor wafers of silicon
06/16/2010EP2195475A1 Wafer/ribbon crystal method and apparatus
06/16/2010CN201506851U Seed crystal clamper for mono-crystal furnace
06/16/2010CN201506850U Novel seed crystal position real-time adjustable mechanism
06/16/2010CN201506849U Lifting and growing device for self-weighing system
06/16/2010CN201506848U Polycrystalline silicon rod and connecting component
06/16/2010CN201506847U Two-section suspensible heat shield for producing single crystal silicon
06/16/2010CN201506846U Secondary charging circular-rod fixture for monocrystalline furnace
06/16/2010CN201506845U Heat shield for single crystal furnace
06/16/2010CN1993503B Method for growing monocrystals from melt
06/16/2010CN101736397A Matted crystal for pulling silicon rod
06/16/2010CN101736396A 3'' *9''tabular alumina monocrystal grown by film fed growth method
06/16/2010CN101736395A Crystal growing and pulling device
06/16/2010CN101320780B 发光元件 Emitting element
06/16/2010CN101319353B Carbon/carbon composite material crucible pot and preparing technique thereof
06/16/2010CN101092736B Production method and control device for developing single crystal bar in square column body
06/15/2010US7736613 Heating in vacuum with helium; fusion, high temperature vitrification; free of bubbles
06/10/2010WO2010064354A1 Upper heater for manufacturing single crystal, single crystal manufacturing apparatus and single crystal manufacturing method
06/10/2010US20100142032 Fluoroberyllium borate non-linear optical crystals and their growth and applications
06/10/2010US20100139550 Crucible for processing a high-melting material and method of processing said material in said crucible
06/10/2010US20100139549 Quartz Glass Crucible for Pulling Silicon Single Crystal and Method of Manufacturing Quartz Glass Crucible for Pulling Silicon Single Crystal
06/10/2010DE102008060520A1 Ein Tiegel zur Prozessierung hochschmelzender Materialien A crucible for the processing of refractory materials
06/09/2010EP2194168A1 Silicon single crystal growing method, silicon wafer and soi substrate using such silicon wafer
06/09/2010EP2194166A1 Silica glass crucible, process for production of the same, and pulling method
06/09/2010CN201501942U Crystal basket
06/09/2010CN201501941U Temperature field stabilizing device of single crystal silicon furnace
06/09/2010CN201501940U Improved heater structure of straight pull single crystal furnace
06/09/2010CN201501939U Device improving feeding quantity of monocrystalline silicon furnace
06/09/2010CN201501938U Graphite system of Z80 single crystal growth furnace
06/09/2010CN1946881B Crucible for the crystallization of silicon
06/09/2010CN101728249A Method for preparing single crystal transition layer of epitaxial compound semiconductor material on silicon chip
06/09/2010CN101724903A Melter assembly and method for charging a crystal forming apparatus with molten source material
06/09/2010CN101724899A Growth process for N-type solar energy silicon single crystal with minority carrier service life of larger than or equal to 1,000 microseconds
06/09/2010CN101724892A Seed crystal clamping device
06/09/2010CN101724891A Automatic compensation method for diameter of czochralski silicon monocrystalline
06/09/2010CN101724890A Method for effectively controlling carbon content in single crystal silicon
06/09/2010CN101724889A System for thermal field of straight pulling silicon single crystal furnace
06/09/2010CN101724888A Method of manufacturing silica glass crucible for pulling silicon single crystals
06/09/2010CN101724887A Silica glass crucible having multilayered structure
06/09/2010CN101723574A Mold for producing a silica crucible
06/03/2010WO2010061560A1 Crystal growing apparatus and crystal growing method
06/03/2010WO2010028103A3 String ribbon crystal and method to grow them using strings with refractory metal core
06/03/2010US20100133485 Process for production of silicon single crystal, and silicon single crystal substrate
06/03/2010US20100132609 Quartz glass crucible for silicon single crystal pulling operation and process for manufacturing the same
06/03/2010CA2739708A1 Crystal growing apparatus and crystal growing method
06/02/2010CN201495313U Novel heavy hammer
06/02/2010CN1995492B Nd-doped potassium yttrium tungstate laser crystal growth method
06/02/2010CN101717998A Neodymium-doped silicic acid yttrium lutecium laser crystal and preparation method thereof
06/02/2010CN101717997A Neodymium-doped silicic acid lutecium gadolinium laser crystal and preparation method thereof
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