| Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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| 01/28/2010 | US20100018454 Method of producing single crystal |
| 01/28/2010 | DE112008000893T5 Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot Method and apparatus for manufacturing silicon single crystals of silicon and |
| 01/27/2010 | EP2147991A1 Expandable graphite sheet, method for protecting carbonaceous crucible using the expandable graphite sheet, and single crystal pulling apparatus |
| 01/27/2010 | EP2147135A2 Large grain, multi-crystalline semiconductor ingot formation method and system |
| 01/27/2010 | CN201390804Y CGC single-crystal silicon crystal growth controller |
| 01/27/2010 | CN201390802Y CCD intelligent image diameter control device |
| 01/27/2010 | CN201390801Y DAC signal measuring plate of single crystal furnace |
| 01/27/2010 | CN201390800Y DAC signal given plate of single crystal furnace |
| 01/27/2010 | CN201390799Y Temperature control unit of single crystal furnace |
| 01/27/2010 | CN100585031C Dislocation-free silicon monocrystal production method |
| 01/27/2010 | CN100585029C Steel-wire flexible-shaft centering cover |
| 01/26/2010 | US7651566 Method and system for controlling resistivity in ingots made of compensated feedstock silicon |
| 01/21/2010 | WO2010007982A1 Piezoelectric single crystal and production method therefor |
| 01/21/2010 | DE112008000486T5 Verfahren für die Fertigung eines Einkristall-Siliziumwafers A method for manufacturing a single crystal silicon wafer |
| 01/21/2010 | DE102008033945A1 Verfahren zur Herstellung von mit Stickstoff dotiertem Quarzglas sowie zur Durchführung des Verfahrens geeignete Quarzglaskörnung A process for the production of quartz glass doped with nitrogen as well as for performing the method suitable silica grain |
| 01/20/2010 | EP2146168A1 Material Handling System And Method |
| 01/20/2010 | EP2145862A1 Crucible made of nitrogen doped quartz glass and method for producing such a crucible |
| 01/20/2010 | CN201386144Y Doping hopper of single crystal furnace |
| 01/20/2010 | CN101631900A System and method of forming a crystal |
| 01/14/2010 | WO2010005736A2 Germanium-enriched silicon material for making solar cells |
| 01/14/2010 | WO2010003573A1 Method for producing doped gallium arsenide substrate wafers with a low optical absorption coefficient |
| 01/14/2010 | US20100006022 Silica glass crucible and method for pulling up silicon single crystal using the same |
| 01/13/2010 | EP2143831A1 Silica glass crucible and method for pulling up silicon single crystal using the same |
| 01/13/2010 | EP2143830A1 Method for protecting carbonaceous crucible and single crystal pulling apparatus |
| 01/13/2010 | CN201381377Y Device utilizing silicon materials containing impurities for preparing high purity silicon single crystal rod |
| 01/13/2010 | CN101624721A Quartz glass crucible and silicon single crystal pulling method using same |
| 01/07/2010 | WO2010002795A1 Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation |
| 01/07/2010 | WO2010001519A1 Single crystal manufacturing apparatus and manufacturing method |
| 01/07/2010 | US20100000465 Method for producing vitreous silica crucible |
| 01/06/2010 | EP2141266A2 Silica glass crucible and method of pulling silicon single crystal with silica glass crucible |
| 01/06/2010 | EP2141130A1 Method for producing vitreous silica crucible |
| 01/06/2010 | CN101619486A Seed crystal and crystal growing method using the seed crystal and device thereof |
| 01/06/2010 | CN101619485A Silica glass crucible and method of pulling silicon single crystal with silica glass crucible |
| 01/05/2010 | US7641734 Method for producing silicon single crystal |
| 01/05/2010 | US7641733 Method and apparatus for growth of multi-component single crystals |
| 12/30/2009 | WO2008131075A3 Large grain, multi-crystalline semiconductor ingot formation method and system |
| 12/30/2009 | CN201372324Y Crystal flotation limiting device for monocrystal oven |
| 12/30/2009 | CN201372323Y Holding rope mechanism for monocrystal oven |
| 12/30/2009 | CN201372322Y Fixing device for crystal flotation flexible shaft of monocrystal oven |
| 12/30/2009 | CN201372321Y Transmission horizontal adjusting device on monocrystal oven |
| 12/30/2009 | CN201372320Y Single entry-type water-cooled furnace cover of single crystal furnace |
| 12/30/2009 | CN201372319Y Device for taking tubular elements |
| 12/30/2009 | CN201372205Y Polysilicon purification device |
| 12/30/2009 | CN100575566C Growing method of carbon-doped sapphire crystal by EFG method |
| 12/30/2009 | CN100575254C Edulcoration method for boiler bottom material generated from silicon monocrystal growth by czochralski process |
| 12/29/2009 | US7637997 Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal |
| 12/24/2009 | US20090317682 Oxide single crystal and method for production thereof, and single crystal wafer |
| 12/24/2009 | US20090314198 Device and method for production of semiconductor grade silicon |
| 12/23/2009 | EP2135976A2 Crucible holding member and method for producing the same |
| 12/23/2009 | CN101608338A Support crucible and preparation thereof |
| 12/23/2009 | CN100572617C Lanthanum titanates single-crystal upgrowth technology |
| 12/23/2009 | CN100572614C Device and method for producing a single crystal |
| 12/22/2009 | US7635414 System for continuous growing of monocrystalline silicon |
| 12/17/2009 | US20090311160 Silicon single crystal and method of producing the same |
| 12/17/2009 | US20090309069 Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program |
| 12/17/2009 | US20090308455 Germanium-enriched silicon material for making solar cells |
| 12/17/2009 | US20090308307 Crucible protection sheet and crucible apparatus using the crucible protection sheet |
| 12/17/2009 | US20090308306 Crucible holding member and method for producing the same |
| 12/17/2009 | DE102009023415A1 Verfahren zur Herstellung eines Silicium-Einkristalls A process for producing a silicon single crystal |
| 12/17/2009 | DE102008027359A1 Intensive mixing of electrically conductive melt using a migrating magnetic field during crystallization and solidification processes, comprises producing melt in cylindrical/rectangular coil system surrounding melting pot and/or container |
| 12/16/2009 | EP2133449A1 Iodide single crystal, method for production the iodide single crystal, and scintillator comprising the iodide single crystal |
| 12/16/2009 | CN201362756Y Zero-pressure alarm device of mono-crystal furnace |
| 12/16/2009 | CN201362755Y Heating system of monocrystalline silicon growth furnace |
| 12/16/2009 | CN201362754Y Monocrystalline silicon transporting ingot car |
| 12/16/2009 | CN101605732A Method and apparatus for manufacturing quartz glass crucible |
| 12/16/2009 | CN101603206A Method for preparing Cr, Nd:YVO4 crystal and Cr, Nd:YVO4 crystal |
| 12/15/2009 | US7632350 Crystal grower with integrated Litz coil |
| 12/10/2009 | WO2009149062A1 Annealing of semi-insulating cdznte crystals |
| 12/10/2009 | US20090301386 Controlling Transport of Gas Borne Contaminants Across a Ribbon Surface |
| 12/10/2009 | US20090301385 Method for producing silicon wafer |
| 12/10/2009 | DE102008026784A1 Epitaxierte Siliciumscheibe mit <110>-Kristallorientierung und Verfahren zu ihrer Herstellung Epitaxial silicon wafer with <110> crystal orientation and process for their preparation |
| 12/10/2009 | CA2726986A1 Annealing of semi-insulating cdznte crystals |
| 12/09/2009 | EP2130953A2 Epitaxial silicon wafer and method for producing the same |
| 12/09/2009 | CN201358322Y Crucible |
| 12/09/2009 | CN201358321Y Rotary lifting shaft of crucible of single crystal furnace |
| 12/09/2009 | CN101597801A Zr-Cu-Ce mixed lithium niobate crystal and preparation method |
| 12/09/2009 | CN101597800A Zr-Fe-Mn mixed lithium niobate crystal and preparation method thereof |
| 12/09/2009 | CN101597798A Codoping modified lithium gadolinium borate scintillation crystal and preparation method thereof |
| 12/09/2009 | CN101597797A Ytterbium-doped lithium gadolinium borate laser crystal and preparation method thereof |
| 12/09/2009 | CN101597796A Growing method of lithium gadolinium borate crystal |
| 12/09/2009 | CN101597795A Epitaxially coated silicon wafer with 110 orientation and method for producing it |
| 12/09/2009 | CN101597794A Czochralski silicon single crystal doped with gallium and germanium |
| 12/09/2009 | CN100567591C Method for producing directionally solidified silicon ingots |
| 12/09/2009 | CN100567217C Production method of high purity cured charcoal felt for silicon crystal growth oven |
| 12/08/2009 | US7629615 Light emitting element and method of making same |
| 12/08/2009 | US7628854 Process for producing silicon single crystal |
| 12/08/2009 | US7628853 Lithium tantalate substrate and process for its manufacture |
| 12/03/2009 | WO2009145149A1 Superconducting magnet device for single crystal puller |
| 12/03/2009 | US20090297426 Silicon wafer |
| 12/03/2009 | US20090297388 Crystalline nobel metal nanostructures and methods for their preparation |
| 12/03/2009 | US20090293806 Silica glass crucible and method for manufacturing the same |
| 12/03/2009 | US20090293804 Method of shoulder formation in growing silicon single crystals |
| 12/03/2009 | US20090293803 Method of growing silicon single crystals |
| 12/03/2009 | US20090293802 Method of growing silicon single crystals |
| 12/03/2009 | US20090293801 Production method of silicon single crystal |
| 12/03/2009 | US20090293800 Single crystal manufacturing apparatus and method |
| 12/03/2009 | US20090293799 Method for growing silicon single crystal, and silicon wafer |
| 12/03/2009 | DE102008062049A1 Manufacture of low-oxygen concentrated silicon single crystal for silicon semiconductor, involves subjecting raw material silicon to silicon single crystal drawing by horizontal magnetic field type Czochralski method |
| 12/02/2009 | EP2128895A2 Semiconductor wafer |
| 12/02/2009 | EP2128310A1 Method for measuring distance between lower end surface of heat shielding member and material melt surface, and method for controlling the distance |