Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method
Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
06/2010
06/02/2010CN101717993A Doping method and doping device of pulling reincorporation antimony crystals
06/02/2010CN101717992A Carbon-carbon composite guide cylinder of CZ silicon crystal growing furnace and preparation method thereof
06/02/2010CN101717991A Improved czochralski silicon monocrystalline furnace
06/02/2010CN101319352B Vertical pulling type single crystal growth furnace
06/01/2010US7727334 Apparatus for pulling single crystal by CZ method
05/2010
05/27/2010WO2010058980A2 Single crystal growing apparatus
05/27/2010US20100128253 Method for detecting the diameter of a single crystal and single crystal pulling apparatus
05/27/2010US20100127354 Silicon single crystal and method for growing thereof, and silicon wafer and method for manufacturing thereof
05/27/2010US20100126410 Apparatus and method for pulling silicon single crystal
05/27/2010US20100126409 Method of Manufacturing Single Crystal
05/27/2010US20100126408 Single crystal growth method and single crystal pulling apparatus
05/27/2010US20100126407 Silica glass crucible and method for pulling single-crystal silicon
05/26/2010CN201485536U Radiation shielding device for pulling furnace
05/26/2010CN201485535U Double-heating system monocrystalline silicon growing device
05/26/2010CN201485534U Magnetic field device for preparing solar monocrystalline silicon
05/26/2010CN201485533U Silicon crystal growth device with two-way airflow
05/26/2010CN201485532U Silicon single crystal bar transporting and cooling vehicle device
05/26/2010CN1916243B Self-double frequency laser crystal of calcium gadolinium vanadic acid with rare earth ions being doped, and preparation method
05/26/2010CN101715496A Removable thermal control for ribbon crystal pulling furnaces
05/26/2010CN101713097A Automatic balancing compensation lifting device used for silicon single crystal growth
05/26/2010CN101713096A Method and device for increasing charging amount of czochralski silicon single crystal
05/26/2010CN101713095A Silicon crystal growing device with two-way airflow
05/26/2010CN101712528A Method and apparatus for manufacturing vitreous silica crucible and vitreous silica crucible
05/26/2010CN101712527A Stainless steel molding rod, manufacturing method and application thereof
05/19/2010EP2186929A1 Seed crystal for pulling silicon single crystal and method for manufacturing silicon single crystal by using the seed crystal
05/19/2010EP2186139A1 String with reduced wetting for ribbon crystals
05/19/2010EP1899508B1 Crucible for the crystallization of silicon and process for its preparation
05/19/2010CN201473621U Damper for inhibiting swinging of flexible shaft of flexible shaft lifting type single crystal furnace
05/19/2010CN101709506A Exhaust method and device of thermal field of single crystal furnace
05/19/2010CN101709505A Energy-saving thermal field for growing silicon single crystal
05/19/2010CN101709504A Device for prolonging service life of vacuum pump of single crystal furnace
05/19/2010CN101709503A Method for prolonging service life of vacuum pump of single crystal furnace
05/18/2010US7718003 Method and apparatus for crystal growth
05/14/2010WO2010053915A2 Methods for preparing a melt of silicon powder for silicon crystal growth
05/14/2010WO2010053586A2 Systems, methods and substrates of monocrystalline germanium crystal growth
05/13/2010US20100116198 Method of protecting carbonaceous crucible and single-crystal pulling apparatus
05/13/2010US20100116195 Method for growing silicon single crystal
05/13/2010US20100116194 Silicon crystalline material and method for manufacturing the same
05/12/2010EP2183411A1 Ribbon crystal string for increasing wafer yield
05/12/2010DE102009035189A1 Verfahren und Apparatur zur Steuerung des Durchmessers eines Siliciumkristall-Ingots in einem Züchtungsverfahren A method and apparatus for controlling the diameter of a silicon crystal ingot in a culture method
05/12/2010DE102007001348B4 Verfahren und Anordnung zur Herstellung von kristallinen Formkörpern aus Schmelzen in Czochralski-Anordnungen Method and apparatus for preparing crystalline moldings from melts in Czochralski-assemblies
05/12/2010CN201463538U combined crucible
05/12/2010CN201459277U Transmission component of single crystal furnace
05/12/2010CN201459276U Czochralski silicon single crystal growing furnace with water cooling jacket
05/12/2010CN201459275U Material transportation device for single crystal furnace
05/12/2010CN101705518A Bi-doped solonetz borate crystal and preparation method and application thereof
05/12/2010CN101705517A Method for pulling square shoulder germanium infrared single crystal
05/12/2010CN101133193B Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
05/12/2010CN101133192B Electromagnetic pumping of liquid silicon in a crystal growing process
05/06/2010WO2010048790A1 A method for controlling czochralski crystal growth
05/06/2010US20100107970 Silica glass crucible having multilayered structure
05/06/2010US20100107967 Production method of zinc oxide single crystal
05/06/2010US20100107966 Methods for preparing a melt of silicon powder for silicon crystal growth
05/06/2010US20100107965 Silica glass crucible for pulling up silicon single crystal, method for manufacturing thereof and method for manufacturing silicon single crystal
05/06/2010DE112008001470T5 Prozess zum Herstellen von Silizium-Einkristall und hochdotiertes n-leitendes Halbleitersubstrat Process for the manufacture of silicon single crystal and highly doped n-type semiconductor substrate
05/05/2010EP2182099A1 Silica glass crucible having multilayered structure
05/05/2010CN201447516U Auxiliary furnace structure of single crystal furnace
05/05/2010CN201447515U Single crystal furnace device
05/05/2010CN1906322B Device for depositing a polycrystalline silicon layer on a support
05/05/2010CN101701356A Lower weighing method used for equal-diameter growth of photoelectric crystal
05/05/2010CN101701355A Pulling growth method of neodymium-doped yttrium-calcium aluminate laser crystal
05/04/2010US7708830 Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions
05/04/2010US7708829 Method and apparatus for crystal growth
05/04/2010US7708827 Highly pure, replaceable wear insert and process for manufacturing the same
04/2010
04/29/2010WO2010047556A2 Seed chuck for a single crystal silicon ingot growing apparatus
04/29/2010WO2010047429A1 Double layered crucible for crystal growth
04/29/2010WO2010047039A1 Method of determining diameter of single crystal, process for producing single crystal using same, and device for producing single crystal
04/29/2010US20100101485 Manufacturing method of silicon single crystal
04/29/2010US20100101387 Crystal growing system and method thereof
04/29/2010DE112008001160T5 Verfahren zum Herstellen eines Siliziumeinkristalls und Siliziumkristallsubstrat A method for producing a silicon single crystal and the silicon crystal substrate
04/29/2010DE102009033667A1 Umkehrwirkungs-Durchmessersteuerung in einem Halbleiterkristall-Züchtungssystem Reverse effect diameter control in a semiconductor crystal growth system
04/28/2010CN101698960A Material supplementing method and material supplementing device for pulling of crystals
04/27/2010US7704318 Silicon wafer, SOI substrate, method for growing silicon single crystal, method for manufacturing silicon wafer, and method for manufacturing SOI substrate
04/22/2010WO2010045399A1 Ribbon crystal end string with multiple individual strings
04/22/2010US20100095881 Arc discharge apparatus, apparatus and method for manufacturing vitreous silica glass crucible, and method for pulling up silicon single crystal
04/22/2010US20100095880 Arc melting high-purity carbon electrode and application thereof
04/22/2010DE112008001309T5 Verfahren zum Ziehen eines Silizium-Einkristalls A method for pulling a silicon single crystal
04/22/2010CA2740416A1 Ribbon crystal end string with multiple individual strings
04/21/2010EP2177648A2 Process for preparing single crystal silicon using crucible rotation to control temperature gradient
04/21/2010CN101696514A Method for producing polycrystal ingot
04/21/2010CN101323985B Tubular screens for large size high melting point crystal growth
04/21/2010CN101319351B Monocrystalline growing furnace
04/15/2010US20100089309 Method for pulling silicon single crystal
04/15/2010US20100089308 Silica glass crucible and method for pulling single-crystal silicon
04/15/2010DE112008000074T5 Dotierungsvorrichtung und Verfahren zum Herstellen eines Siliziumeinkristalls The doping apparatus and method for manufacturing a silicon monocrystal
04/15/2010DE102005028202B4 Verfahren zur Herstellung von Halbleiterscheiben aus Silizium A process for producing semiconductor wafers from silicon
04/14/2010EP2174917A1 Method for manufacturing quartz glass crucible
04/13/2010US7695787 Silica glass crucible
04/08/2010US20100083895 Device and Process for Producing a Block of Crystalline Material
04/08/2010DE19861325B4 Verfahren zum Herstellen eines Siliziumstabs unter Steuern des Ziehgeschwindigkeitsverlaufs in einem Heißzonenofen A method for producing a silicon ingot while controlling the pulling rate profile in a hot zone furnace
04/08/2010DE19738438B4 Einrichtung und Verfahren für die Bestimmung des Durchmessers eines Kristalls Apparatus and method for determining the diameter of a crystal
04/08/2010DE102008047599A1 Vorrichtung zum Ziehen eines Einkristalls An apparatus for pulling a single crystal
04/07/2010EP2172432A1 Process for producing quartz glass crucible and apparatus for producing the quartz glass crucible
04/07/2010CN101691669A Boron-phosphorus doped mother alloy doping method after shoulder hanging in CZ monocrystalline silicon production
04/06/2010US7691199 Melter assembly and method for charging a crystal forming apparatus with molten source material
04/01/2010US20100078595 Use of codoping to modify the scintillation properties of inorganic scintillators doped with trivalent activators
03/2010
03/31/2010CN101688324A Method and apparatus for growing a ribbon crystal with localized cooling
03/31/2010CN101688323A Low etch pit density (epd) semi-insulating iii-v wafers
03/31/2010CN101688322A Wafer/ribbon crystal method and apparatus
03/30/2010US7686887 Quartz glass crucible for pulling up silicon single crystal and method for producing the same
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