| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 06/05/1997 | WO1997020353A1 Low resistance contact semiconductor diode |
| 06/05/1997 | WO1997020344A1 A method and device for chip assembly |
| 06/04/1997 | EP0777280A2 Passivation of organic devices |
| 06/04/1997 | CN2255682Y Semiconductor laser plastic forming-packaging device |
| 06/03/1997 | US5636234 Semiconductor laser device including heat sink with pn junction |
| 06/03/1997 | US5635733 Semiconductor light emitting element with a current diffusing layer having a changing carrier concentration therein |
| 06/03/1997 | US5635115 Filling circuit board cavities containing functionl element with molten sealing resin, curing |
| 05/28/1997 | EP0776053A2 Silicon nanoparticles |
| 05/28/1997 | EP0775371A1 COMPOUNDS AND INFRARED DEVICES INCLUDING In 1-x?Tl x?Q, WHERE Q IS As 1-y?P y? AND 0 y 1 |
| 05/28/1997 | EP0775369A2 Miniature semiconductor device for surface mounting |
| 05/28/1997 | EP0775180A1 Organic electroluminescent device |
| 05/28/1997 | EP0775179A1 Organic electroluminescent device |
| 05/28/1997 | EP0667060B1 Electronic component |
| 05/28/1997 | DE19648955A1 III=V compound semiconductor device, e.g. blue light LED or laser diode |
| 05/27/1997 | US5633527 Unitary lens semiconductor device |
| 05/27/1997 | US5633514 Substrate having active layer between two cladding layers, wherein first cladding layer and substrate are lattice matched at growth temperature and mismatched at ambient temperature |
| 05/27/1997 | US5633193 Patterning semiconductor surface, growing phosphorus-containing groups 3-5 material on surface, heating, exposing to phosphorus flux |
| 05/27/1997 | US5633192 Method for epitaxially growing gallium nitride layers |
| 05/27/1997 | US5632812 Diamond electronic device and process for producing the same |
| 05/22/1997 | WO1997018592A2 Opto-electronic component made from ii-vi semiconductor material |
| 05/22/1997 | WO1997018581A1 Low threshold microcavity light emitter |
| 05/22/1997 | WO1997018448A1 Infrared optical system |
| 05/21/1997 | EP0774169A1 Mid infrared light emitting diode |
| 05/21/1997 | EP0629315B1 Integrated solid state light emitting and detecting array and apparatus employing said array |
| 05/20/1997 | US5631988 Parallel optical interconnect |
| 05/20/1997 | US5631475 Semiconductor light emitting element |
| 05/20/1997 | US5631474 Light emitting element and array of light emitting elements for light source |
| 05/20/1997 | US5631190 Focusing preferred wavelength laser beam on part of silicon carbide surface to vaporize and cut it, then dry etching to remove by-products from laser cutting |
| 05/20/1997 | US5630905 Method of fabricating quantum bridges by selective etching of superlattice structures |
| 05/15/1997 | WO1997017627A1 Low profile optical device with multiple mounting configurations |
| 05/15/1997 | DE19646976A1 Teil für eine Herstellungsvorrichtung für Halbleiter Part of a manufacturing apparatus for semiconductor |
| 05/15/1997 | DE19635571A1 Verfahren zur Herstellung einer kohlenstoffdotierten Verbindungshalbleiterschicht A process for producing a carbon-doped compound semiconductor layer |
| 05/15/1997 | DE19542241A1 Optoelektronisches Bauelement in II-VI-Halbleitermaterial Optoelectronic component in II-VI semiconductor material |
| 05/13/1997 | US5630001 Image generator for use in image manifestation apparatus |
| 05/13/1997 | US5629952 Packaging of high power semiconductor lasers |
| 05/13/1997 | US5629534 Semiconductor device |
| 05/13/1997 | US5629232 Vapor deposition and selective etching of successive semiconductor layers having each crystal plane in preferred molecular orientation; lasing suppression |
| 05/09/1997 | WO1997016855A1 Light-emitting diode with divided light-emitting region |
| 05/09/1997 | WO1997012386A3 Optoelectronic semiconductor component |
| 05/09/1997 | CA2212624A1 Light-emitting diode with divided light-emitting region |
| 05/07/1997 | EP0772249A2 Nitride semiconductor device |
| 05/07/1997 | EP0772248A2 Microactivity LED with photon recycling |
| 05/07/1997 | EP0772247A1 Semiconductor light-emitting device and production method thereof |
| 05/07/1997 | EP0772240A2 Full color light emitting diode display |
| 05/07/1997 | EP0772236A2 Full color light emitting diode display assembly |
| 05/06/1997 | US5627931 Optoelectronic transducer |
| 05/06/1997 | US5627386 Silicon nanostructure light-emitting diode |
| 05/06/1997 | US5627382 Light emitting semiconductor |
| 05/06/1997 | US5626921 Method for forming photoluminescence layer on a semiconductor layer by ion irradiation |
| 04/30/1997 | CN1148734A Semiconductor light emission device and production method thereof |
| 04/29/1997 | US5625635 Infrared emitting device and method |
| 04/29/1997 | US5625480 Control circuits for parallel optical interconnects |
| 04/29/1997 | US5625202 Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
| 04/29/1997 | US5625201 Multiwavelength LED devices and methods of fabrication |
| 04/29/1997 | US5624705 Method of producing a device comprising a luminescent material |
| 04/24/1997 | WO1997015082A1 Semiconductor devices |
| 04/24/1997 | WO1997008356A3 Modified metalorganic chemical vapor deposition of group III-V thin layers |
| 04/22/1997 | US5623181 Multi-layer type light emitting device |
| 04/17/1997 | WO1997014245A1 Thermal imaging device with scanned light emitting diode display |
| 04/17/1997 | WO1997013891A1 METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES |
| 04/17/1997 | DE19627838A1 Epitaxial wafer for LED manufacture |
| 04/17/1997 | DE19613265C1 Circuit element, e.g. laser diode |
| 04/17/1997 | CA2207306A1 Thermal imaging device with scanned light emitting diode display |
| 04/15/1997 | US5621748 Stripe laser diode having an improved efficiency for current confinement |
| 04/15/1997 | US5621225 Light emitting diode display package |
| 04/15/1997 | US5620557 Sapphireless group III nitride semiconductor and method for making same |
| 04/10/1997 | WO1997013282A1 Dynamic infrared scene projector |
| 04/10/1997 | WO1997013281A1 Infrared emitter |
| 04/10/1997 | WO1997013170A1 Optoelectronic module, method of mounting optoelectronic device, and optical system comprising optoelectronic module |
| 04/10/1997 | DE19600306C1 Semiconductor component with hermetically-sealed housing for opto-electronic component |
| 04/10/1997 | DE19537545A1 Luminescence diode manufacturing method with layer group contg. pre-junction |
| 04/10/1997 | DE19537544A1 Luminescence diode |
| 04/10/1997 | DE19537542A1 Semiconductor LED device for display and illumination applications |
| 04/10/1997 | DE19536451A1 Infrarotsender Infrared transmitter |
| 04/09/1997 | EP0767502A2 Semiconductor light-emitting device |
| 04/09/1997 | CN1147153A Method and apparatus for fabricating self-assembling microstructures |
| 04/09/1997 | CN1034534C Light-emitting diode with improved window structure |
| 04/08/1997 | US5619518 Semiconductor laser diode |
| 04/08/1997 | US5619058 Light emitting diode device having four discrete regions |
| 04/08/1997 | US5618872 Monodisperse, nonporous, spherical particles based on silicon, titanium, and zirconium dioxides, alumina and vanadium and niobium pentoxides or mixed systems thereof |
| 04/03/1997 | WO1997012405A1 Surface light-emitting element and self-scanning type light-emitting device |
| 04/03/1997 | WO1997012404A1 Encapsulation of an optoelectronic semiconductor component with an optical element and method of producing the same |
| 04/03/1997 | WO1997012386A2 Optoelectronic semiconductor component |
| 04/03/1997 | DE19536454A1 Optoelektronisches Halbleiter-Bauelement The optoelectronic semiconductor component |
| 04/02/1997 | EP0766397A1 Driver for light emitting device |
| 04/02/1997 | EP0766355A1 Method of mounting a semiconductor laser device |
| 04/02/1997 | EP0766324A1 Semiconductor device and method of fabrication |
| 04/02/1997 | EP0766297A2 Method for growing a II-VI compound semiconductor layer containing cadmium and method for fabricating a semiconductor laser |
| 04/02/1997 | EP0766221A1 Driving circuit for light emitting element using a switched capacitor circuit |
| 04/02/1997 | CN2251172Y Plane apparatus for piezoelectric infrared heat sensing element |
| 04/02/1997 | CN1034455C Group 2-6 laser diodes with quantum traps grown by atomic layer epitaxy and migration enhanced epitaxy |
| 04/02/1997 | CN1034454C Single quantum trap of group 2-6 laser diode without cladding |
| 04/01/1997 | US5617446 Surface-emitting semiconductor light emitting device |
| 04/01/1997 | US5616958 Electronic package |
| 04/01/1997 | US5616937 Compound semiconductor luminescent device |
| 04/01/1997 | US5616177 Group II-VI semiconductor laser and method for the manufacture thereof |
| 03/27/1997 | WO1997011518A1 Semiconductor material, method of producing the semiconductor material, and semiconductor device |
| 03/27/1997 | DE19535778A1 Radiation-emitting semiconductor device for digital data transmission |
| 03/27/1997 | DE19535777A1 Optoelektronisches Halbleiter-Bauelement und Verfahren zur Herstellung An optoelectronic semiconductor device and methods for making |
| 03/27/1997 | DE19534153A1 Illumination intensity of LED array adjusting method for electrophotographic printer or copier |