Patents
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
03/2002
03/28/2002US20020037138 Optical module and method for manufacturing same
03/28/2002US20020036733 Reflection type liquid crystal display
03/28/2002US20020036630 Light-emitting diode driving circuit and optical transmission module using the same
03/28/2002US20020036464 Led lamp, led lamp assembly and fixing method of an led lamp
03/28/2002US20020036296 Semiconductor light-emitting element and method of manufacturing the same
03/28/2002US20020036295 Optical device, surface emitting type device and method for manufacturing the same
03/28/2002US20020036286 Gallium nitride based II-V group compound semiconductor device
03/27/2002EP1191609A2 LED lamp, LED lamp assembly and fixing method of an LED lamp
03/27/2002EP1191608A2 Light emitting diodes with improved light extraction efficiency
03/27/2002EP1191607A1 Method for fabricating a LED having a phosphor containing isolation layer
03/27/2002EP1190452A1 InGaAsN/GaAs QUANTUM WELL DEVICES
03/27/2002EP0852818B1 Dynamic infrared scene projector
03/27/2002CN2483837Y White semiconductor twin LED packaging structure
03/27/2002CN2483836Y Diode light-emitting component with generation of white light
03/27/2002CN1342388A LED array employing specifiable lattice relationship
03/27/2002CN1341971A Inverted type light-emitting diode
03/27/2002CN1341966A Light-emitting device of high-power light-emitting diode
03/26/2002US6363096 Article comprising a plastic laser
03/26/2002US6362801 Display apparatus
03/26/2002US6362515 GaN substrate including wide low-defect region for use in semiconductor element
03/26/2002US6362496 Semiconductor light emitting device having a GaN-based semiconductor layer, method for producing the same and method for forming a GaN-based semiconductor layer
03/26/2002US6362494 Semiconductor device and method and apparatus for manufacturing semiconductor device
03/26/2002US6362017 Producing a buffer layer on a single crystal sapphire substrate; producing semiconductor having a wurtzite-type crystal structure from an organometallic compound by vapor phase epitaxy on buffer layer on sapphire substrate
03/26/2002US6362016 Providing a layered structure of a substrate, a first cladding layer a light emitting layer, and a second cladding layer, where in one of layers is formed of a nitride group iii-v compound semiconductor
03/26/2002US6361917 Forming patterns by treatment with radiation
03/26/2002US6361190 Large surface LED lighting device
03/21/2002WO2002023954A1 Led luminaire
03/21/2002WO2002023641A1 Oxide and air apertures and method of manufacture
03/21/2002WO2002023640A1 Nitride compound semiconductor light emitting device having a tunnel junction structure and fabrication method thereof
03/21/2002WO2002023637A1 Semiconductor light emitting element formed on a clear or translucent substrate
03/21/2002WO2001066997A3 Lighting apparatus having quantum dot layer
03/21/2002US20020034861 Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device
03/21/2002US20020034835 Forming first type ohmic contact layer on a semiconductor substrate; forming a double heterostructure; forming a second type ohmic contact layer on cladding layer; adhering transparent substrate; etching, forming electrode
03/21/2002DE10119507A1 Halbleiter-Lichtemissionsvorrichtung und Verfahren zu deren Herstellung A semiconductor light emitting device and process for their preparation
03/21/2002DE10042947A1 Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis Radiation-emitting semiconductor component based on GaN
03/20/2002EP1189292A1 Light-emitting semiconductor device and surface-emitting device
03/20/2002EP1189291A2 Chip type light emitting diode and method of manufacture thereof
03/20/2002EP1189290A1 Semiconductor device having ZnO based oxide semiconductor layer and method of manufacturing the same
03/20/2002EP1189289A1 Nitride semiconductor device
03/20/2002EP1189052A2 Device for image acquisition of piece goods
03/20/2002EP0870336B1 Surface mount led alphanumeric display
03/20/2002CN1340864A Surface assembled luminescent diode and its manufacture method
03/20/2002CN1340850A Assembling method for monolithic electronic member and monolithic electronic member
03/20/2002CN1081413C Optical transmitter and transceiver module
03/20/2002CN1081391C Non-guide plastic packaging process for LED
03/19/2002US6360030 Illumination device and image reading apparatus using the same
03/19/2002US6359920 Extended wavelength strained layer lasers having strain compensated layers
03/19/2002US6359918 Light source control device
03/19/2002US6359330 Optoelectronic module and method for stabilizing its temperature
03/19/2002US6359292 Semiconductor light emitting element
03/19/2002US6358822 Method of epitaxially growing III-V compound semiconductor containing nitrogen and at least another group V element utilizing MBE
03/19/2002US6358652 Fluorescent conversion filter and organic light-emitting device equipped with the fluorescent conversion filter
03/19/2002US6358633 Organic electroluminescence element
03/19/2002US6358631 Mixed vapor deposited films for electroluminescent devices
03/19/2002US6358378 Method for fabricating ZnO thin film for ultraviolet detection and emission source operated at room temperature, and apparatus therefor
03/19/2002US6357904 Linear illumination device
03/14/2002WO2002021610A1 Plasma encapsulation for electronic and microelectronic components such as oleds
03/14/2002WO2002021605A1 The semiconductor led device and producing method
03/14/2002WO2002021604A1 Nitride semiconductor light-emitting device and optical device including the same
03/14/2002WO2002020880A1 Production of low defect epitaxial films
03/14/2002WO2001093310A3 Semiconductor device with vertical electronic injection and method for making same
03/14/2002WO2001069309A3 Electrodes for liquid crystal displays and light emitting structures
03/14/2002WO2001063709A3 Semiconductor component for the emission of electromagnetic radiation and method for production thereof
03/14/2002WO2001043165A3 Oxide films containing p-type dopant and process for preparing same
03/14/2002US20020031900 Method for aligning quantum dots and semiconductor device fabricated by using the same
03/14/2002US20020031853 Bipolar transistor, semiconductor light emitting device and semiconductor device
03/14/2002US20020031851 Converting a surface of silicon layer to silicon carbide; epitaxially growing a epitaxially growing a layer of silicon carbide on converted surface of silicon layer; growing layers of gallium nitride to form microelectronic layer
03/14/2002US20020031680 Zinc oxide films containing p-type dopant and process for preparing same
03/14/2002US20020031602 Thermal treatment of solution-processed organic electroactive layer in organic electronic device
03/14/2002US20020030996 Method of manufacturing surface-emitting backlight, and surface-emitting backlight
03/14/2002US20020030445 Chip type light emitting diode and method of manufacture thereof
03/14/2002US20020030444 Thin film phosphor-converted light emitting diode device
03/14/2002US20020030292 Transparent coating member for light-emitting diodes and a fluorescent color light source
03/14/2002US20020030201 Group III nitride compound semiconductor light-emitting device
03/14/2002US20020030198 Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks
03/14/2002US20020030197 Semiconductor light emitting device and method for manufacturing same
03/14/2002US20020030196 Semiconductor device having ZnO based oxide semiconductor layer and method of manufacturing the same
03/14/2002US20020030195 Semiconductor light-emitting device and apparatus for driving the same
03/14/2002US20020030194 Light emitting diodes with improved light extraction efficiency
03/14/2002US20020030192 III-V compounds semiconductor device with an AIxByInzGa1-x-y-zN non continuous quantum dot layer
03/14/2002US20020030185 Method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (InGaAsP) quantum well structures
03/14/2002DE10044040A1 Verfahren zur Verbesserung der Effizienz von epitaktisch hergestellten Quantenpunkt-Halbleiterbauelementen mit einer oder mehreren Quantenpunktschichten A method for improving the efficiency of quantum dot epitaxially produced semiconductor devices having one or more quantum dot layers
03/14/2002DE10041689A1 Verfahren zur Herstellung von dotiertem Halbleitermaterial Process for the preparation of doped semiconductor material
03/14/2002DE10041686A1 Bauelement mit einer Vielzahl von Lumineszenzdiodenchips Device having a plurality of LED chips
03/14/2002DE10041328A1 Verpackungseinheit für Halbleiterchips Package for semiconductor chips
03/13/2002EP1187229A1 Light-emitting semiconductor device and method of manufacture thereof
03/13/2002EP1187228A1 Light source
03/13/2002EP1187227A2 Surface-mountable optical element and method of fabrication
03/13/2002EP1187226A1 Surface-mount type light emitting diode and method of manufacturing same
03/13/2002EP1187213A2 Power generating display device
03/13/2002EP1186067A1 Conducting polymers
03/13/2002EP1186012A1 Method for producing an element with material that has been made porous
03/13/2002EP1185891A2 Flat panel solid state light source
03/13/2002EP1185727A1 Sequential hydride vapor-phase epitaxy
03/13/2002EP0938834B1 Lamp
03/13/2002CN1340215A Nitride semiconductor device and its manufacturing method
03/13/2002CN1339828A Luminous element with roughed interface and its producing method
03/13/2002CN1339664A Light-emitting equipment using the light of light-emitting diode as base
03/13/2002CN1080939C Semiconductor light-emitting device and method for producing same
03/12/2002US6356573 Vertical cavity surface emitting laser