| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 02/21/2002 | US20020020856 Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the same |
| 02/21/2002 | US20020020850 Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate |
| 02/21/2002 | US20020020848 Light-emitting diode and method of producing the same |
| 02/21/2002 | US20020020847 Compound semiconductor light emitting device and method of fabricating the same |
| 02/21/2002 | US20020020844 Structural improvement of a LED |
| 02/21/2002 | US20020020843 Light-emitting apparatus |
| 02/21/2002 | US20020020842 Semiconductor light-emitting device and method for manufacturing thereof |
| 02/21/2002 | US20020020341 Semiconductor film with graded gallium nitride layer deposited on the substrate having a varying composition of a continuous grade from an initial to a final composition formed from a precursor without interruption in the supply |
| 02/21/2002 | DE10032839A1 LED element has housing with partial cover by reflective layer to change emission direction |
| 02/20/2002 | EP1180725A2 Semiconductor substrate for improving pattern formation in photolithographic process |
| 02/20/2002 | CN1336873A Optical writing head comprising self-scanning light-emitting element array |
| 02/20/2002 | CN1336693A Semiconductor luminescent device and its mfg. method |
| 02/20/2002 | CN1079586C High-efficiency intensified step-by-step high-lightness luminous diode and design method therefor |
| 02/19/2002 | USRE37554 Method for producing an optoelectronic semiconductor component |
| 02/19/2002 | US6348703 Used in a high-intensity infrared light-emitting device which is employed in an optical communications and spatial transmission apparatus |
| 02/19/2002 | US6348698 A iii-v semiconductor alloy layered structure as an active layer including n and at least one other group-v element, and at least one group-iii element; used for red wavelength laser diodes having excellent temperature characteristics |
| 02/19/2002 | US6348684 Receiving system for free-space optical communications |
| 02/19/2002 | US6348096 Method for manufacturing group III-V compound semiconductors |
| 02/19/2002 | CA2108559C Electroluminescent silicon device |
| 02/14/2002 | WO2002013342A2 Silicon wafer with embedded optoelectronic material for monolithic oeic |
| 02/14/2002 | WO2002013281A1 Semiconductor chip for optoelectronics and method for production thereof |
| 02/14/2002 | WO2002013245A1 Method of controlling stress in gallium nitride films deposited on substrates |
| 02/14/2002 | WO2002013243A2 Devices with optical gain in silicon |
| 02/14/2002 | WO2002013231A2 Radiation source and method for producing a lens mould |
| 02/14/2002 | WO2002012788A1 Led mounting system |
| 02/14/2002 | WO2001079581A8 Method for forming thin-film layer for device and organic electroluminescence device |
| 02/14/2002 | WO1997004509A3 Semiconductor laser chip and infrared emitter component |
| 02/14/2002 | US20020019069 Optical element and method of manufacturing the same, and electronic instrument |
| 02/14/2002 | US20020018632 Lighting apparatus having quantum dot layer |
| 02/14/2002 | US20020018502 Semiconductor lasers with varied quantum well thickness |
| 02/14/2002 | US20020017844 LED light source with field-of-view-controlling optics |
| 02/14/2002 | US20020017727 Method for manufacturing semiconductor device using group III nitride compound |
| 02/14/2002 | US20020017653 Blue light emitting diode with sapphire substrate and method for making the same |
| 02/14/2002 | US20020017652 Semiconductor chip for optoelectronics |
| 02/14/2002 | US20020017651 White light emission diode |
| 02/14/2002 | US20020017650 III-V compound semiconductor device with an InGaN1-x-yPxASy non-continuous quantum dot layer |
| 02/14/2002 | DE10048196A1 Production of a III-V compound semiconductor based on gallium nitride comprises forming the semiconductor stacked structure on a substrate, etching, forming a first electrode, tempering, and forming a second electrode |
| 02/13/2002 | EP1179859A2 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device |
| 02/13/2002 | EP1179858A2 Light emitting devices |
| 02/13/2002 | EP1179219A1 Led module for signaling devices |
| 02/13/2002 | EP0842543B1 Optoelectronic transducer and manufacturing process |
| 02/13/2002 | CN1336092A A lattice structure based LED array for illumination |
| 02/13/2002 | CN1336027A Laser diode device and method for producing the same |
| 02/13/2002 | CN1336012A Injection non-coherent emitter |
| 02/13/2002 | CN1335920A Luminaire, optical element and method of illuminating an object |
| 02/13/2002 | CN1335805A Aerogel substrate and method for preparing the same |
| 02/12/2002 | US6346997 Illumination device, image reading apparatus having the device and information processing system having the apparatus |
| 02/12/2002 | US6346771 High power led lamp |
| 02/12/2002 | US6346720 Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element |
| 02/12/2002 | US6346719 AlGaInP light-emitting diode |
| 02/12/2002 | US6346436 Quantum thin line producing method and semiconductor device |
| 02/12/2002 | US6345903 Surface-mount type emitting diode and method of manufacturing same |
| 02/12/2002 | US6345902 Light emitting diode mounting structure |
| 02/07/2002 | WO2002011214A1 Illumination device with at least one led as the light source |
| 02/07/2002 | WO2002011173A1 Luminescence conversion based light emitting diode and phosphors for wavelength conversion |
| 02/07/2002 | WO2002010809A1 Flexible flat color display |
| 02/07/2002 | WO2001077578A3 A flexible light track for signage |
| 02/07/2002 | WO2001047002A3 Pendeoepitaxial gallium nitride layers grown on weak posts |
| 02/07/2002 | US20020016067 Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate |
| 02/07/2002 | US20020015562 Optical waveguide connecting structure, optical element mounting structure and optical fiber mounting structure |
| 02/07/2002 | US20020015193 Illumination device, image sensor having the illumination device, image reading apparatus and information processing system using the image sensor |
| 02/07/2002 | US20020015013 Integrated color LED chip |
| 02/07/2002 | US20020014849 Control circuit of light emitting element |
| 02/07/2002 | US20020014838 Electrooptics; luminescent layer converts electromagnetic radiation generated by semiconductor into a visible light of a different wavelength |
| 02/07/2002 | US20020014829 Image display device |
| 02/07/2002 | US20020014681 Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device |
| 02/07/2002 | US20020014674 Light emitting device and light emitting device module |
| 02/07/2002 | US20020014632 Group III nitride compound semiconductor light-emitting device |
| 02/07/2002 | US20020014631 Semiconductor light emitting device |
| 02/07/2002 | US20020014630 Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element |
| 02/07/2002 | US20020014629 Group III nitride compound semiconductor device and method for producing the same |
| 02/07/2002 | US20020014622 Semiconductor device and method for manufacturing the same |
| 02/07/2002 | US20020014576 Light emitting element protecting device and method thereof |
| 02/07/2002 | DE19918859C2 Elektro-optisches Wandlerbauteil und Verfahren zu seiner Herstellung Electro-optical transducer element and process for its preparation |
| 02/07/2002 | DE10036940A1 Lumineszenz-Konversions-LED Luminescence-conversion LED |
| 02/07/2002 | DE10034886A1 Optisches Mehrfachbauteil, insbesondere zur Verwendung mit Leuchtdioden Multiple optical component, in particular for use with light-emitting diodes |
| 02/07/2002 | DE10034865A1 Optoelektronisches oberflächenmontierbares Modul Optoelectronic surface-mountable module |
| 02/06/2002 | EP1178546A2 Annealed organic light emitting devices and methods of annealing organic light emitting devices |
| 02/06/2002 | EP1178544A2 Semiconductor light emitting device and method for manufacturing same |
| 02/06/2002 | EP1178543A1 Semiconductor light emitting device |
| 02/06/2002 | EP1178523A1 METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE |
| 02/06/2002 | EP1178522A1 Formation of Quantum Dots |
| 02/06/2002 | EP1177605A2 Laser diode device and method for producing the same |
| 02/06/2002 | EP1177587A1 Light emitting diode with improved efficiency |
| 02/06/2002 | EP1177586A1 Light-emitting diode arrangement |
| 02/06/2002 | EP1177585A1 Nitride semiconductor device |
| 02/06/2002 | CN2476105Y Improved luminous diode |
| 02/06/2002 | CN1334692A Organic electroluminescent element with heat radiation function and its making method |
| 02/06/2002 | CN1334607A High-brightness LED unit and its making method |
| 02/06/2002 | CN1334487A Display device |
| 02/06/2002 | CN1334485A Flashlight unit of camera, electronic camera and lighting head |
| 02/05/2002 | US6345063 Algainn elog led and laser diode structures for pure blue or green emission |
| 02/05/2002 | US6344689 Optical semiconductor device for surface mounting |
| 02/05/2002 | US6344665 Electrode structure of compound semiconductor device |
| 02/05/2002 | US6344662 Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
| 02/05/2002 | US6344375 Substrate containing compound semiconductor, method for manufacturing the same and semiconductor device using the same |
| 01/31/2002 | WO2002009475A2 IMPROVED GaN LIGHT EMITTING DIODE |
| 01/31/2002 | WO2002009243A1 Improved transparent substrate light emitting diode |
| 01/31/2002 | WO2002009242A2 Optical structure on compliant substrate |
| 01/31/2002 | WO2002009200A1 Enhanced light-emitting diode |