Patents
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
01/2002
01/31/2002WO2002009199A1 IMPROVED BUFFER FOR GROWTH OF GaN ON SAPPHIRE
01/31/2002WO2002009185A1 IMPROVED WINDOW FOR GaN LED
01/31/2002WO2002009148A2 Integrated radiation emitting system and process for fabricating same
01/31/2002WO2001073860A3 Illumination apparatus and light emitting diode and method of use
01/31/2002WO2000008691A9 Zinc oxide films containing p-type dopant and process for preparing same
01/31/2002US20020013042 Defect filter layer
01/31/2002US20020013037 Two-dimensionally arrayed quantum device
01/31/2002US20020012507 Optical connector
01/31/2002US20020011601 Semiconductor light emitting device and method for manufacturing same
01/31/2002US20020011600 Semiconductor light emitting device for stably obtaining peak wave length of emission spectrum
01/31/2002US20020011599 Gallium nitride single crystal substrate and method of proucing same
01/31/2002DE10037420A1 High precision SMD light emitting diode has parallel resistance for reducing brightness of LED
01/31/2002DE10035399A1 Subträger, elektronische Baugruppe und Verfahren zur Herstellung derselben Subcarriers, electronic module and method of producing same
01/31/2002DE10034263A1 Production of a quasi substrate used in the production of a laser diode comprises forming an intermediate layer made of a group III nitride doped with oxygen between a utilizing layer based on gallium nitride and a sapphire base substrate
01/31/2002DE10033502A1 Optoelektronisches Modul, Verfahren zu dessen Herstellung und dessen Verwendung An optoelectronic module, process for its preparation and its use
01/31/2002DE10033496A1 Halbleiterchip für die Optoelektronik Semiconductor chip for optoelectronics
01/30/2002EP1176849A2 Electronic flash, electronic camera and light emitting head
01/30/2002EP1176231A2 A boride-based substrate for growing semiconducting layers thereon and a semiconductor device using the same
01/30/2002EP1175698A1 Uv-supported activation of a doping agent in compound semiconductors by means of rtp systems
01/30/2002EP1175694A2 Semiconductor devices with selectively doped iii-v nitride layers
01/30/2002CN1333570A Optical element and making method thereof electronic device
01/30/2002CN1333478A Light source, lighting device, LCD and electronic device
01/29/2002US6342405 Growing thin layers in sequences that result in the overall lattice match and bandgap desired; varying concentration of the elements varies the bandgaps; for lasers that emit light in the blue, short wavelength region; desorption of the group
01/29/2002US6342404 Group III nitride compound semiconductor device and method for producing
01/29/2002US6342313 Oxide films and process for preparing same
01/29/2002US6341898 Receptacle, process for producing the same and optical connector containing the same
01/24/2002WO2002007275A1 Semiconductor laser device
01/24/2002WO2002007233A2 Group iii nitride compound semiconductor device
01/24/2002WO2002007232A1 Semiconductor light-emitting device and semiconductor light-emitting apparatus
01/24/2002WO2002007231A1 Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device
01/24/2002WO2002007230A1 Light emitting diodes
01/24/2002WO2002007229A1 Light emitting diode arrangements
01/24/2002WO2002007228A1 Light emitting diode with lens
01/24/2002WO2002007132A1 Image display unit and production method for image display unit
01/24/2002WO2002007131A1 Passive radiation optical system module especially for use with light-emitting diodes
01/24/2002WO2000033365A8 Fabrication of gallium nitride layers by lateral growth
01/24/2002US20020009894 Method for fabricating a semiconductor device
01/24/2002US20020008724 Semiconductor device, ink tank provided with such semiconductor device, ink jet cartridge, ink jet recording apparatus, method for manufacturing such semiconductor device, and communication system, method for controlling pressure, memory element, security system of ink jet recording apparatus
01/24/2002US20020008463 Display device and module therefor
01/24/2002US20020008325 Functional device unit and method of producing the same
01/24/2002US20020008245 Semiconductor devices with selectively doped iii-v nitride layers
01/24/2002US20020008244 Semiconductor component for generating polychromatic electromagnetic radiation
01/24/2002US20020008243 Formation of ohmic contacts in III-nitride light emitting devices
01/24/2002US20020008242 Light emitting device
01/24/2002US20020008241 Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
01/24/2002US20020007962 Submount, electronic assembly and process for producing the same
01/24/2002DE10129393A1 Halbleiterlaser mit variierter Breite der Quantenpotentialtöpfe Semiconductor laser with a varied width of the quantum wells
01/24/2002DE10032838A1 Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung Radiation-emitting semiconductor chip and method of manufacture
01/24/2002DE10032531A1 Lumineszenzdiode Light-emitting diode
01/24/2002DE10032453A1 Radiation emitting component used for producing white light has pigments of one or more luminescent dyes arranged in and/or on a glass housing
01/23/2002EP1174932A2 Submount, electronic components and method of manufacturing
01/23/2002EP1174931A2 Light emitting device, display apparatus with an array of light emitting devices, and display apparatus method of manufacture
01/23/2002EP1174930A1 Light-emitting chip device with case
01/23/2002EP1174745A2 Optoelectronic surface- mountable module
01/23/2002EP1173894A1 Chirped multi-well active region led
01/23/2002EP1173888A1 Web process interconnect in electronic assemblies
01/23/2002EP1173885A1 Dual process semiconductor heterostructures and methods
01/23/2002CN2473747Y Silver-tin composite LED leading wire frame
01/23/2002CN1332569A Photographic image trapping device with light-emitting diode
01/23/2002CN1332480A Single-crystal GaN base and its manufacture
01/23/2002CN1078388C Surface mounting type light emitting diode
01/22/2002US6340982 Image forming apparatus and exposure device thereof
01/22/2002US6340826 Infra-red light emitting Si-MOSFET
01/22/2002US6340824 Semiconductor light emitting device including a fluorescent material
01/22/2002US6340535 Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device
01/22/2002US6340251 Multi-channel optical coupling module
01/22/2002CA2252980C Single crystal sic and a method of producing the same
01/17/2002WO2002005399A1 Nitride semiconductor device
01/17/2002WO2002005358A1 Radiation-emitting semiconductor chip
01/17/2002WO2002005357A1 Led module, method for producing the same and the use thereof
01/17/2002WO2002005356A1 Lamp with an led light source
01/17/2002WO2002005350A1 Method for producing an led light source
01/17/2002WO2002003777A1 Method of producing plants, plant cultivating device, and light-emitting panel
01/17/2002WO2001041224A3 High efficiency light emitters with reduced polarization-induced charges
01/17/2002US20020006142 Method for compensating for output of semiconductor luminous device and apparatus therefor
01/17/2002US20020006044 Assembly of a display device and an illumination system
01/17/2002US20020005892 Illuminating unit for an article-sensing camera
01/17/2002US20020005523 Semiconductor light emitting device and manufacturing method thereof
01/17/2002US20020005521 Semiconductor light emitting device and method for manufacturing the same
01/17/2002DE10032246A1 Lumineszenzdiodenchip auf der Basis von InGaN und Verfahren zu dessen Herstellung LED chip on the basis of InGaN and process for its preparation
01/17/2002DE10031821A1 LED mit Auskoppelstruktur LED outcoupling
01/16/2002EP1172867A2 Method for producing P-Type Gallium Nitride-Based compound semiconductor, method for producing Gallium Nitride-Based compound semiconductor light-emitting device, and gallium nitride-based compound semiconductor light-emitting device
01/16/2002EP1172866A2 Light-emitting device and optical integrated device
01/16/2002EP1172858A1 Semiconductor device
01/16/2002EP1172683A2 Light source device and illumination device for liquid crystal device
01/16/2002EP1172464A1 Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate
01/16/2002EP0733269B1 Porous semiconductor material
01/16/2002CN1078005C Button switch for carding clock
01/15/2002US6339606 High power semiconductor light source
01/15/2002US6339233 Metal clad ridge waveguide (“MCRW”) laser semiconductor structure with doped semiconductor substrate
01/15/2002US6339014 Aluminum-and/or gallium nitride at growth temperature greater than 900 degrees; n-type junctions doped with arsenic, phosphorus or compounds, such as arsene or phosphine
01/10/2002WO2002003517A1 Iii group nitride compound semiconductor light emitting element
01/10/2002WO2002003479A1 Ingan-based light-emitting diode chip and a method for the production thereof
01/10/2002WO2002003478A1 Led comprising a coupling-out structure
01/10/2002WO2002003477A1 Radiation emitting semiconductor chip and a method for the production thereof
01/10/2002WO2002003476A1 Luminescent diode
01/10/2002WO2002003474A2 N-type nitride semiconductor laminate and semiconductor device using same
01/10/2002US20020004336 Hybrid connector and process for assembling the same
01/10/2002US20020004254 Method for producing p-type gallium nitride-based compound semiconductor, method for producing gallium nitride-based compound semiconductor light-emitting device, and gallium nitride-based compound semiconductor light-emitting device
01/10/2002US20020004252 Method for manufacturing light-emitting device using a group III nitride compound semiconductor