Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2008
11/27/2008US20080290445 Method for manufacturing a semiconductor body with a trench and semiconductor body with a trench
11/27/2008US20080290444 Capacitor structure in a semiconductor device
11/27/2008US20080290443 Semiconductor device with a plurality of isolated conductive films
11/27/2008US20080290442 Process for high voltage superjunction termination
11/27/2008US20080290432 System having improved surface planarity for bit material deposition
11/27/2008US20080290431 Nanorod sensor with single-plane electrodes
11/27/2008US20080290430 Stress-Isolated MEMS Device and Method Therefor
11/27/2008US20080290429 Semiconductor device and method for fabricating the same
11/27/2008US20080290428 Use of alloys to provide low defect gate full silicidation
11/27/2008US20080290427 Use of dopants to provide low defect gate full silicidation
11/27/2008US20080290425 Method for Fabricating a Semiconductor Element, and Semiconductor Element
11/27/2008US20080290424 Transistor design self-aligned to contact
11/27/2008US20080290423 Nanotube-based switching element
11/27/2008US20080290422 ASYMMETRIC FIELD EFFECT TRANSISTORS (FETs)
11/27/2008US20080290421 Contact barrier structure and manufacturing methods
11/27/2008US20080290420 SiGe or SiC layer on STI sidewalls
11/27/2008US20080290419 Low on resistance cmos transistor for integrated circuit applications
11/27/2008US20080290417 ELECTRONIC COMPONENT COMPRISING A TITANIUM CARBONITRIDE (TiCN) BARRIER LAYER AND PROCESS OF MAKING THE SAME
11/27/2008US20080290415 Semiconductor device and method for fabricating the same
11/27/2008US20080290412 Suppressing short channel effects
11/27/2008US20080290411 Semiconductor device and method for fabricating the same
11/27/2008US20080290410 Mosfet With Isolation Structure and Fabrication Method Thereof
11/27/2008US20080290409 Halo-first ultra-thin soi fet for superior short channel control
11/27/2008US20080290408 Thin silicon-on-insulator double-diffused metal oxide semiconductor transistor
11/27/2008US20080290406 Method for producing a vertical field effect transistor
11/27/2008US20080290405 Power mosfet diode
11/27/2008US20080290404 Semiconductor device and a method for manufacturing the same
11/27/2008US20080290403 Semiconductor apparatus
11/27/2008US20080290402 Semiconductor device and method for fabricating the same
11/27/2008US20080290401 Nonvolatile semiconductor memory devices with charge injection corner
11/27/2008US20080290400 SONOS ONO stack scaling
11/27/2008US20080290399 Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
11/27/2008US20080290398 Nonvolatile charge trap memory device having <100> crystal plane channel orientation
11/27/2008US20080290397 Memory cell and method for manufacturing and operating the same
11/27/2008US20080290396 Semiconductor memory
11/27/2008US20080290395 Semiconductor device and method of manufacturing the same
11/27/2008US20080290394 Gate electrode for a nonvolatile memory cell
11/27/2008US20080290393 Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film
11/27/2008US20080290392 Semiconductor device having n-channel type MOS transistor with gate electrode layer featuring small average polycrystalline silicon grain size
11/27/2008US20080290390 Semiconductor device and method for manufacturing the same
11/27/2008US20080290387 Semiconductor device having reduced sub-threshold leakage
11/27/2008US20080290386 Floating gate memory device with increased coupling coefficient
11/27/2008US20080290384 Microelectronic Device Provided with Transistors Coated with a Piezoelectric Layer
11/27/2008US20080290380 Semiconductor device with raised spacers
11/27/2008US20080290379 Dual trench isolation for cmos with hybrid orientations
11/27/2008US20080290378 Transistor package with wafer level dielectric isolation
11/27/2008US20080290377 Thin film transistor array panel for a liquid crystal display
11/27/2008US20080290376 Semiconductor Integrated Circuit
11/27/2008US20080290374 Layout for high density conductive interconnects
11/27/2008US20080290373 Semiconductor memory device
11/27/2008US20080290372 Semiconductor device and method of manufacturing the same
11/27/2008US20080290371 Semiconductor devices including implanted regions and protective layers
11/27/2008US20080290370 Semiconductor devices and methods of manufacturing thereof
11/27/2008US20080290367 Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device
11/27/2008US20080290366 Soi Vertical Bipolar Power Component
11/27/2008US20080290356 Reflective Layered System Comprising a Plurality of Layers that are to be Applied to a III/V Compound Semiconductor Material
11/27/2008US20080290350 LED lamp with exposed heat-conductive fins
11/27/2008US20080290347 Gallium Nitride Semiconductor and Method of Manufacturing the Same
11/27/2008US20080290345 Semiconductor device having display device
11/27/2008US20080290326 Controlled alignment of catalytically grown nanostructures in a large-scale synthesis process
11/27/2008US20080290314 Composition for manufacturing barrier rib, and plasma display panel manufactured by the same
11/27/2008US20080290286 Sensor and image pickup device
11/27/2008US20080289573 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
11/27/2008US20080289417 Sensor for detecting acceleration and angular velocity
11/27/2008DE112007000169T5 Polymerverbindung und lichtemittierende Vorrichtung auf Polymerbasis unter deren Verwendung Polymer compound and light emitting device using polymer-based under the
11/27/2008DE112004000661B4 Integrierte Schaltung mit einem magnetisch ummantelten Leiter An integrated circuit comprising a magnetically coated conductor
11/27/2008DE10360574B4 Leistungshalbleiterbauelement mit sanftem Abschaltverhalten Power semiconductor device with a soft turn-off
11/27/2008DE10351511B4 Halbleitervorrichtung mit Verriegelungsschaltung A semiconductor device comprising locking circuit
11/27/2008DE102008024467A1 Halbleitervorrichtung Semiconductor device
11/27/2008DE102008022825A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
11/27/2008DE102008021182A1 Halbleitereinrichtung und Herstellungsverfahren für eine Halbleitereinrichtung A semiconductor device and manufacturing method of a semiconductor device
11/27/2008DE102007024461A1 Halbleiterelement Semiconductor element
11/27/2008DE102007024355A1 Verfahren zum Herstellen einer Schutzstruktur A method for producing a protective structure
11/27/2008DE102006043485B4 Leistungshalbleitermodul und Verfahren zum Betrieb eines Leistungshalbleitermoduls mit wenigstens einem durch Feldeffekt steuerbaren Halbleiterbauelement The power semiconductor module and method of operating a power semiconductor module with at least one field-effect-controllable semiconductor component
11/27/2008DE102005014714B4 Halbleitervorrichtung mit isoliertem Gate A semiconductor device comprising insulated gate
11/27/2008DE102004054564B4 Halbleitersubstrat und Verfahren zu dessen Herstellung Semiconductor substrate and process for its preparation
11/26/2008EP1995836A1 Semiconductor chip and method for manufacturing the same
11/26/2008EP1995787A2 Semiconductor device having oxide semiconductor layer and manufacturing method therof
11/26/2008EP1995786A1 GaN substrate, and epitaxial substrate and semiconductor light-emitting device employing the substrate
11/26/2008EP1994567A2 Mos transistor with adjustable threshold
11/26/2008EP1994566A1 Insulated gate-type semiconductor device and manufacturing method thereof
11/26/2008EP1994562A1 Semiconductor wafer with high thermal conductivity
11/26/2008EP1994557A1 Vertical eeprom device
11/26/2008EP1993781A1 Manufacturing method of memory element, laser irradiation apparatus, and laser irradiation method
11/26/2008EP1706899A4 Planarization method of manufacturing a superjunction device
11/26/2008EP1436843A4 Method for wrapped-gate mosfet
11/26/2008EP1412985A4 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods
11/26/2008EP1397808B3 Steering gate and bit line segmentation in non-volatile memories
11/26/2008CN201156137Y Pixel circuit for vertically oriented schema LCD apparatus
11/26/2008CN101313413A Photoelectric converter
11/26/2008CN101313408A P-n junction diode and manufacturing method
11/26/2008CN101313407A Schottky barrier diode and method for using the same
11/26/2008CN101313393A Plasma oxidation method and method for manufacturing semiconductor device
11/26/2008CN101313391A Semiconductor surface treatment agent
11/26/2008CN101313386A Mos transistor with better short channel effect control and corresponding manufacturing method
11/26/2008CN101312912A Semiconductor thin film and method for manufacturing same, and thin film transistor
11/26/2008CN101312606A 显示设备 Display device
11/26/2008CN101312216A Flash memory device with mixing structure charge trapping layer and its manufacture method
11/26/2008CN101312215A Semiconductor device
11/26/2008CN101312214A Semiconductor device and its manufacture method
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