Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2009
01/27/2009US7482191 Highly doped III-nitride semiconductors
01/27/2009US7482189 Light emitting diode and method of fabricating the same
01/27/2009US7482179 Method of fabricating a thin film transistor using dual or multiple gates
01/27/2009US7482068 n-type or a p-type conductivity; drift zone of high voltage power devices; low cost; swiches
01/27/2009US7481880 Mask and method for crystallizing amorphous silicon
01/27/2009CA2368127C Accelerometer transducer used for seismic recording
01/22/2009WO2009011922A1 Quantum dot-based light sheets useful for solid-state lighting
01/22/2009WO2009011581A1 An electronic device and a method of manufacturing an electronic device
01/22/2009WO2009011450A1 Core-shell-shell nanowire transistor and fabrication method thereof
01/22/2009WO2009011445A1 Laminate structure, electronic device, and display device
01/22/2009WO2009011310A1 Display device and method for manufacturing the same
01/22/2009WO2009011224A1 Method for producing metal oxide semiconductor, and thin film transistor obtained from the metal oxide semiconductor
01/22/2009WO2009011222A1 Capacitance type acceleration sensor and manufacturing method thereof
01/22/2009WO2009011220A1 Semiconductor device, semiconductor device manufacturing method, display device and display device manufacturing method
01/22/2009WO2009011204A1 Method for manufacturing organic thin film transistor, and organic thin film transistor
01/22/2009WO2009011084A1 Semiconductor device provided with thin film transistor and method for manufacturing the semiconductor device
01/22/2009US20090023261 Method for manufacturing semiconductor device
01/22/2009US20090021986 Operating method of non-volatile memory device
01/22/2009US20090021862 Electric field read/write head, method of manufacturing the same, and information storage device comprising the electric field read/write head
01/22/2009US20090021663 Electro-optical device
01/22/2009US20090021661 Thin-film transistor, thin-film transistor producing method, and display apparatus
01/22/2009US20090021627 High dynamic range cascaded integration pixel cell and method of operation
01/22/2009US20090021539 Light Emitting Device, Method of Driving a Light Emitting Device, Element Substrate, and Electronic Equipment
01/22/2009US20090020853 STRUCTURES OF AND METHODS FOR FORMING VERTICALLY ALIGNED Si WIRE ARRAYS
01/22/2009US20090020852 Semiconductor device
01/22/2009US20090020851 Bicmos devices with a self-aligned emitter and methods of fabricating such bicmos devices
01/22/2009US20090020849 Electronic device including a capacitor and a process of forming the same
01/22/2009US20090020848 High-frequency transistor
01/22/2009US20090020846 Diode for adjusting pin resistance of a semiconductor device
01/22/2009US20090020843 Bottom anode Schottky diode structure and method
01/22/2009US20090020837 Semiconductor device and manufacturing method thereof
01/22/2009US20090020836 Method for making a semiconductor device having a high-k gate dielectric
01/22/2009US20090020835 Insulating film and electronic device
01/22/2009US20090020834 Semiconductor device and manufacturing method thereof
01/22/2009US20090020832 Semiconductor Devices and the Manufacture Thereof
01/22/2009US20090020831 Deuterated film encapsulation of nonvolatile charge trap memory device
01/22/2009US20090020830 Asymmetric field effect transistor structure and method
01/22/2009US20090020829 Printing of contact metal and interconnect metal via seed printing and plating
01/22/2009US20090020827 Thin gate electrode cmos devices and methods of fabricating same
01/22/2009US20090020826 Integrated Schottky Diode and Power MOSFET
01/22/2009US20090020824 Semiconductor device and method for producing the same
01/22/2009US20090020819 Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structure
01/22/2009US20090020816 Semiconductor device and method of forming the same
01/22/2009US20090020815 Semiconductor device and manufacturing method of the same
01/22/2009US20090020814 High Voltage Semiconductor Device with Floating Regions for Reducing Electric Field Concentration
01/22/2009US20090020813 Formation of lateral trench fets (field effect transistors) using steps of ldmos (lateral double-diffused metal oxide semiconductor) technology
01/22/2009US20090020812 Metal-oxide-semiconductor device
01/22/2009US20090020810 Method of Forming Power Device Utilizing Chemical Mechanical Planarization
01/22/2009US20090020809 Semiconductor device including trench gate transistor and method of forming the same
01/22/2009US20090020808 Semiconductor integrated circuit devices and fabrication methods thereof
01/22/2009US20090020807 Semiconductor device and method for fabricating the same
01/22/2009US20090020806 Asymmetric field effect transistor structure and method
01/22/2009US20090020805 Non-volatile memory devices and methods of forming the same
01/22/2009US20090020804 Semiconductor device and method for fabricating the same
01/22/2009US20090020803 Aging device
01/22/2009US20090020802 Integrated scheme for forming inter-poly dielectrics for non-volatile memory devices
01/22/2009US20090020801 Two-bit flash memory cell structure and method of making the same
01/22/2009US20090020800 Semiconductor Device and Method of Making Same
01/22/2009US20090020799 Semiconductor device and method of manufacturing the same
01/22/2009US20090020797 Semiconductor device and method of manufacturing the same
01/22/2009US20090020792 Isolated tri-gate transistor fabricated on bulk substrate
01/22/2009US20090020790 Method for fabricating polysilicon film, a gas phase deposition apparatus and an electronic device formed thereby
01/22/2009US20090020787 Semiconductor device using semiconductor nanowire and display apparatus and image pick-up apparatus using the same
01/22/2009US20090020786 Semiconductor device
01/22/2009US20090020785 Semiconductor integrated circuit device
01/22/2009US20090020784 Method for designing semiconductor device and semiconductor device
01/22/2009US20090020783 Transistor with differently doped strained current electrode region
01/22/2009US20090020767 Active Matrix Substrate
01/22/2009US20090020766 Power semiconductor device
01/22/2009US20090020765 Semiconductor Device and Method for Manufacturing Same
01/22/2009US20090020763 Poly silicon layer and structure for forming the same
01/22/2009US20090020762 Display device and method of fabricating the same
01/22/2009US20090020761 Semiconductor device and method for manufacturing the same
01/22/2009US20090020760 Methods for forming materials using micro-heaters and electronic devices including such materials
01/22/2009US20090020759 Light-emitting device
01/22/2009US20090020757 Flash Anneal for a PAI, NiSi Process
01/22/2009US20090020753 Method of manufacturing semiconductor active layer, method of manufacturing thin film transistor using the same and thin film transistor having semiconductor active layer
01/22/2009US20090020752 Resistance-switching oxide thin film devices
01/22/2009US20090020748 Si/sige interband tunneling diodes with tensile strain
01/22/2009US20090020747 Method for realizing a hosting structure of nanometric elements
01/22/2009DE112004001922B4 Flash-Architektur mit abgesenktem Kanal für geringere Kurzkanaleffekte Flash architecture with reduced channel for lower short-channel effects
01/22/2009DE10392200B4 Herstellungsverfahren und Varaktor Manufacturing processes and varactor
01/22/2009DE10324751B4 Verfahren zur Herstellung einer Halbleiter-Struktur mit einem Halbleitersubstrat und mit diesem Verfahren hergestellte Halbleiter-Struktur A method of fabricating a semiconductor structure comprising a semiconductor substrate, and with this method produced semiconductor structure
01/22/2009DE102008032796A1 Halbleitervorrichtung mit PN-Säulenabschnitt A semiconductor device having PN-column portion
01/22/2009DE102008011252A1 Halbleitervorrichtung Semiconductor device
01/22/2009DE102007061259A1 Arraysubstrat für ein Flüssigkristalldisplay sowie Verfahren zum Herstellen desselben On the same array substrate for a liquid crystal display and method of manufacturing
01/22/2009DE102007033873A1 N-doped zone manufacturing method for semiconductor wafer e.g. silicon wafer, involves diffusing protons from end-of-range area along direction of wafer front side, and developing n-doped semiconductor zone with hydrogen-induced donors
01/22/2009DE102007033839A1 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
01/22/2009DE102007030056B3 Verfahren zum Blockieren einer Voramorphisierung einer Gateelektrode eines Transistors A method for blocking a pre-amorphization of a gate electrode of a transistor
01/22/2009DE102007018631B4 Halbleiterbauelement mit Kompensationszonen und Entladestrukturen für die Kompensationszonen A semiconductor device with compensation zones and the compensation zones for Entladestrukturen
01/22/2009DE102005045078B4 Feldeffekttransistor mit einer verspannten Kanalschicht an Seitenwänden einer Struktur an einem Halbleitersubstrat Field effect transistor with a strained channel layer on sidewalls of a structure on a semiconductor substrate
01/22/2009DE102004060854B4 Halbleitervorrichtungs-Simulationsverfahren und Halbleitervorrichtungs-Simulationsvorrichtung Semiconductor device simulation method and simulation apparatus semiconductor device
01/22/2009DE10106836B4 Integrierte Schaltungsanordnung aus einem flächigen Substrat Integrated circuit arrangement of a planar substrate
01/21/2009EP2017880A2 Solid-state timing device using a floating-gate transistor
01/21/2009EP2016624A1 Semiconductor device including a floating gate memory cell with a superlattice channel and associated methods
01/21/2009EP2016623A1 High voltage transistor with improved high side performance
01/21/2009EP2016622A1 Semiconductor device for generating an oscillating voltage
01/21/2009EP2016621A1 Semiconductor device having a semiconductor-on-insulator configuration and a superlattice and associated methods
01/21/2009EP1723675A4 Adaptive voltage control for performance and energy optimization
01/21/2009EP1454361A4 Trench mosfet device with polycrystalline silicon source contact structure