Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2008
12/30/2008US7470607 Transparent oxide semiconductor thin film transistor
12/30/2008US7470602 Crystalline film and its manufacture method using laser
12/30/2008US7470589 Semiconductor device
12/30/2008US7470582 Method of manufacturing semiconductor device having impurity region under isolation region
12/30/2008US7470580 Fabrication method of a semiconductor device
12/30/2008US7470578 Method of making a finFET having suppressed parasitic device characteristics
12/30/2008US7470574 OFET structures with both n- and p-type channels
12/30/2008US7470572 Thin film transistor liquid crystal display and manufacturing method thereof
12/30/2008US7470561 Organic semiconductor material, organic semiconductor structure, and organic semiconductor device
12/30/2008US7470554 Forming method of stacking structure and manufacturing method of electron source and image display apparatus using such method
12/30/2008US7470473 a laser comprising a semiconductor nanostrusture crystal layer, including intermetallics, metal sulfides, nitrides or phosphides distributed in a metal oxide matrix, disposed on a grating
12/25/2008US20080318401 Power semiconductor device for suppressing substrate recirculation current and method of fabricating power semiconductor device
12/25/2008US20080318384 Method of forming quantum wire gate device
12/25/2008US20080318376 Semiconductor Device Manufactured Using a Method to Improve Gate Doping While Maintaining Good Gate Profile
12/25/2008US20080318373 Method of fabricating self-aligned bipolar transistor having tapered collector
12/25/2008US20080316852 Nonvolatile semiconductor memory device
12/25/2008US20080316831 Nonvolatile semiconductor device, system including the same, and associated methods
12/25/2008US20080316826 Semiconductor device having transistor and capacitor of SOI structure and storing data in nonvolatile manner
12/25/2008US20080316810 Memory unit
12/25/2008US20080316386 Thin Film Transistor, Thin Film Transistor Substrate, and Methods for Manufacturing the Same
12/25/2008US20080316384 Display substrate, method for manufacturing the same and display apparatus having the same
12/25/2008US20080316152 Transistor circuit, display panel and electronic apparatus
12/25/2008US20080315745 Electronic device containing carbon nanotubes and method for manufacturing the same
12/25/2008US20080315430 Nanowire vias
12/25/2008US20080315428 Thin Film Transistor and Display Device, and Method for Manufacturing Thereof
12/25/2008US20080315370 Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth
12/25/2008US20080315369 Semiconductor device and semiconductor package having the same
12/25/2008US20080315364 Semiconductor device and manufacturing method for same
12/25/2008US20080315363 Method for producing a semiconductor component, and a semiconductor component
12/25/2008US20080315362 Micro-Electro-Mechanical System Varactor
12/25/2008US20080315361 Semiconductor Device and Method of Manufacturing the Same
12/25/2008US20080315360 Resistor of Semiconductor Device and Method for Fabricating the Same
12/25/2008US20080315359 Integrated circuit including vertical diode
12/25/2008US20080315358 Capacitive element, method of manufacture of the same, and semiconductor device
12/25/2008US20080315357 Integrated circuit and method including structuring a material
12/25/2008US20080315354 Fuse for semiconductor device
12/25/2008US20080315352 Method of manufacturing semiconductor device
12/25/2008US20080315350 Method for manufacturing semiconductor substrate, and semiconductor device
12/25/2008US20080315348 Pitch by Splitting Bottom Metallization Layer
12/25/2008US20080315347 Providing gaps in capping layer to reduce tensile stress for beol fabrication of integrated circuits
12/25/2008US20080315343 Semiconductor device
12/25/2008US20080315336 Method of Assembly Using Array of Programmable Magnets
12/25/2008US20080315335 Magnetoresistive random access memory
12/25/2008US20080315332 Micromechanical Component and Manufacturing Method
12/25/2008US20080315330 Sacrificial self-aligned interconnect structures
12/25/2008US20080315328 Dual poly deposition and through gate oxide implants
12/25/2008US20080315325 Semiconductor device and method of manufacturing the same
12/25/2008US20080315320 Semiconductor Device with both I/O and Core Components and Method of Fabricating Same
12/25/2008US20080315319 Semiconductor device and manufacturing method of the semiconductor device
12/25/2008US20080315315 Electronic device including a gated diode
12/25/2008US20080315314 Semiconductor device having a dual gate electrode and methods of making the same
12/25/2008US20080315313 Semiconductor device, method of manufacturing same and method of designing same
12/25/2008US20080315311 Semiconductor device
12/25/2008US20080315309 Fin field effect transistor devices with self-aligned source and drain regions
12/25/2008US20080315308 Low on-resistance lateral double-diffused mos device and method of fabricating the same
12/25/2008US20080315307 High voltage device
12/25/2008US20080315306 Semiconductor Device and Method of Fabricating the Semiconductor Device
12/25/2008US20080315305 Semiconductor device and method of manufacturing the same
12/25/2008US20080315304 Thin silicon-on-insulator high voltage auxiliary gated transistor
12/25/2008US20080315303 Method of forming a semiconductor structure comprising insulating layers with different thicknesses
12/25/2008US20080315302 Method of Forming Nanotube Vertical Field Effect Transistor
12/25/2008US20080315301 Trench Gate Power Semiconductor Device
12/25/2008US20080315300 Semiconductor device and method for manufacturing semiconductor device
12/25/2008US20080315299 Semiconductor device
12/25/2008US20080315298 High-voltage metal-oxide-semiconductor transistor
12/25/2008US20080315297 Semiconductor device
12/25/2008US20080315295 Atomic Layer Deposition Method and Semiconductor Device Formed by the Same
12/25/2008US20080315294 Dual-gate device and method
12/25/2008US20080315293 Atomic Layer Deposition Method and Semiconductor Device Formed by the Same
12/25/2008US20080315292 Atomic Layer Deposition Method and Semiconductor Device Formed by the Same
12/25/2008US20080315291 Nonvolatile semiconductor memory device and method of manufacturing the same
12/25/2008US20080315290 Memory device and methods for its fabrication
12/25/2008US20080315289 Electrically erasable programmable read-only memory (eeprom) device and methods of fabricating the same
12/25/2008US20080315288 Memory cell of nonvolatile semiconductor memory
12/25/2008US20080315287 Flash memory and method of fabricating the same
12/25/2008US20080315286 Semiconductor device
12/25/2008US20080315285 Non-volatile memory devices and methods of fabricating the same
12/25/2008US20080315284 Flash memory structure and method of making the same
12/25/2008US20080315283 Semiconductor device and method of fabricating the same
12/25/2008US20080315282 Semiconductor Devices Including Transistors Having Three Dimensional Channels
12/25/2008US20080315281 Flash Memory Device and Method of Manufacturing the Same
12/25/2008US20080315280 Semiconductor memory device having memory cell unit and manufacturing method thereof
12/25/2008US20080315279 Nanowire transistor with surrounding gate
12/25/2008US20080315278 Insulated Gate Field Effect Transistors
12/25/2008US20080315276 Capacitor pair structure for increasing the match thereof
12/25/2008US20080315275 Capacitor pair structure for increasing the match thereof
12/25/2008US20080315274 Deep trench capacitor and method of making same
12/25/2008US20080315268 Methods and Apparatus for Semiconductor Memory Devices Manufacturable Using Bulk CMOS Process Manufacturing
12/25/2008US20080315267 Device Performance Improvement Using FlowFill as Material for Isolation Structures
12/25/2008US20080315266 Junction field effect transistor with a hyperabrupt junction
12/25/2008US20080315264 Strain-compensated field effect transistor and associated method of forming the transistor
12/25/2008US20080315260 Diode Structure
12/25/2008US20080315259 Semiconductor memory device
12/25/2008US20080315256 Nitride semiconductor device
12/25/2008US20080315255 Thermal Expansion Transition Buffer Layer for Gallium Nitride on Silicon
12/25/2008US20080315254 Semiconductor device fabrication method, semiconductor device, and semiconductor layer formation method
12/25/2008US20080315253 Front and backside processed thin film electronic devices
12/25/2008US20080315251 Semiconductor device and method for fabricating thereof
12/25/2008US20080315250 Insulated gate semiconductor device and the method of manufacturing the same
12/25/2008US20080315249 Semiconductor device and manufacturing method thereof