| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/05/2009 | US20090032903 Multiple voltage integrated circuit and design method therefor |
| 02/05/2009 | US20090032900 Method of protecting shallow trench isolation structure and composite structure resulting from the same |
| 02/05/2009 | US20090032898 Methods for Defining Dynamic Array Section with Manufacturing Assurance Halo and Apparatus Implementing the Same |
| 02/05/2009 | US20090032897 Semiconductor Device and Method for Its Manufacture |
| 02/05/2009 | US20090032891 Structure of magnetic random access memory and fabrication method thereof |
| 02/05/2009 | US20090032890 Multilayer dielectric |
| 02/05/2009 | US20090032889 Field effect transistor having an asymmetric gate electrode |
| 02/05/2009 | US20090032888 Semiconductor device |
| 02/05/2009 | US20090032887 Transistor having gate electrode with controlled work function and memory device having the same |
| 02/05/2009 | US20090032885 Buried Isolation Layer |
| 02/05/2009 | US20090032884 Semiconductor device, and method for manufacturing the same |
| 02/05/2009 | US20090032883 Semiconductor device |
| 02/05/2009 | US20090032880 Method and apparatus for tunable isotropic recess etching of silicon materials |
| 02/05/2009 | US20090032879 Nitride-based semiconductor device |
| 02/05/2009 | US20090032877 Method of enhancing drive current in a transistor |
| 02/05/2009 | US20090032875 Semiconductor device |
| 02/05/2009 | US20090032874 Method for integrating silicon-on-nothing devices with standard cmos devices |
| 02/05/2009 | US20090032873 Ultra thin single crystalline semiconductor TFT and process for making same |
| 02/05/2009 | US20090032872 Multiple oxide thickness for a semiconductor device |
| 02/05/2009 | US20090032871 Integrated circuit with interconnected frontside contact and backside contact |
| 02/05/2009 | US20090032870 Semiconductor device and method for manufacturing same |
| 02/05/2009 | US20090032869 Semiconductor device and method of manufacturing the same |
| 02/05/2009 | US20090032868 High performance power mos structure |
| 02/05/2009 | US20090032867 Dmos type semiconductor device and method for manufacturing the same |
| 02/05/2009 | US20090032866 Methods of fabricating dual fin structures and semiconductor device structures with dual fin structures |
| 02/05/2009 | US20090032864 Self-aligned charge storage region formation for semiconductor device |
| 02/05/2009 | US20090032863 Nitridation oxidation of tunneling layer for improved SONOS speed and retention |
| 02/05/2009 | US20090032862 Non-volatile memory cell and non-volatile memory device using said cell |
| 02/05/2009 | US20090032861 Nonvolatile memories with charge trapping layers containing silicon nitride with germanium or phosphorus |
| 02/05/2009 | US20090032860 Programmable memory, programmable memory cell and the manufacturing method thereof |
| 02/05/2009 | US20090032859 Finfet flash memory device with an extended floating back gate |
| 02/05/2009 | US20090032858 Layout and structure of memory |
| 02/05/2009 | US20090032857 Semiconductor device manufacturing method and semiconductor device |
| 02/05/2009 | US20090032855 Method for forming a deep trench in an soi device by reducing the shielding effect of the active layer during the deep trench etch process |
| 02/05/2009 | US20090032851 Method for Producing a Semiconductor Body Having a Recombination Zone, Semiconductor Component Having a Recombination Zone, and Method for Producing Such a Semiconductor Component |
| 02/05/2009 | US20090032850 N-channel MOS Transistor Fabricated Using A Reduced Cost CMOS Process |
| 02/05/2009 | US20090032849 Semiconductor device and method of manufacturing semiconductor device |
| 02/05/2009 | US20090032848 Semiconductor device and method for forming same |
| 02/05/2009 | US20090032845 Soi field effect transistor having asymmetric junction leakage |
| 02/05/2009 | US20090032844 Semiconductor device and method of manufacturing the same |
| 02/05/2009 | US20090032842 Nanomembrane structures having mixed crystalline orientations and compositions |
| 02/05/2009 | US20090032841 Semiconductor Devices and Methods of Manufacture Thereof |
| 02/05/2009 | US20090032840 Semiconductor device and method of manufacture |
| 02/05/2009 | US20090032839 Semiconductor Device and Its Driving Method |
| 02/05/2009 | US20090032838 Symmetric bidirectional silicon-controlled rectifier |
| 02/05/2009 | US20090032837 Asymmetric bidirectional silicon-controlled rectifier |
| 02/05/2009 | US20090032821 Semiconductor device and electrical circuit device using thereof |
| 02/05/2009 | US20090032820 Reliable Normally-Off III-Nitride Active Device Structures, and Related Methods and Systems |
| 02/05/2009 | US20090032819 Array substrate for liquid crystal display device and method of fabricating the same |
| 02/05/2009 | US20090032818 Thin film transistor array panel and liquid crystal display including the panel |
| 02/05/2009 | US20090032817 Back-To-Back Metal/Semiconductor/Metal (MSM) Schottky Diode |
| 02/05/2009 | US20090032814 SiGe DIAC ESD protection structure |
| 02/05/2009 | US20090032812 Microelectronic device |
| 02/05/2009 | US20090032805 Microresonator systems and methods of fabricating the same |
| 02/05/2009 | US20090032804 Self-Aligned T-Gate Carbon Nanotube Field Effect Transistor Devices and Method for Forming the Same |
| 02/05/2009 | US20090032803 Method and apparatus for fabricating a carbon nanotube transistor |
| 02/05/2009 | US20090032802 Mosfet device featuring a superlattice barrier layer and method |
| 02/05/2009 | US20090032801 Approach to contacting nanowire arrays using nanoparticles |
| 02/05/2009 | US20090032797 Photocathode |
| 02/05/2009 | US20090032795 Schottky diode and memory device including the same |
| 02/05/2009 | US20090032794 Phase change memory device and fabrication method thereof |
| 02/05/2009 | DE19738750B4 Hochspannungs-Leistungs-MOS-Vorrichtung High-voltage power MOS device |
| 02/05/2009 | DE19541497B4 Lateraler Feldeffekttransistor Lateral field effect transistor |
| 02/05/2009 | DE112007000697T5 Leistungshalbleitervorrichtung Power semiconductor device |
| 02/05/2009 | DE112007000626T5 Halbleiter-Feldeffekttransistor und Verfahren zur Herstellung desselben Of the same semiconductor field-effect transistor and methods for making |
| 02/05/2009 | DE10325721B4 Halbleiterbauelement Semiconductor device |
| 02/05/2009 | DE102008034801A1 Wiederverwendbares Substrat und Verfahren zu dessen Behandlung A reusable substrate and method of treatment |
| 02/05/2009 | DE102008002653A1 Verfahren und Layout eines Halbleiterbauelements mit reduzierten Störeffekten A method and layout of a semiconductor device with reduced interference effects |
| 02/05/2009 | DE102007035587A1 Integrierte Schaltung und entsprechende Herstellungsverfahren Integrated circuit and corresponding manufacturing processes |
| 02/05/2009 | DE102004016992B4 Verfahren zur Herstellung eines Bipolar-Transistors A process for producing a bipolar transistor |
| 02/04/2009 | EP2020686A1 Oxide semiconductor, thin film transistor, and their production methods |
| 02/04/2009 | EP2020681A2 Process of manufacturing trench gate semiconductor device |
| 02/04/2009 | EP2020035A1 Semiconductor device including a dopant blocking superlattice and associated methods |
| 02/04/2009 | EP2020034A2 Nanowire on non-single crystal substrate for optoelectronic applications |
| 02/04/2009 | EP2020031A2 High performance 3d fet structures, and methods for forming the same using preferential crystallographic etching |
| 02/04/2009 | EP2020029A2 Improved cmos diodes with dual gate conductors, and methods for forming the same |
| 02/04/2009 | EP2020027A2 Structure and method for creating reliable via contacts for interconnect applications |
| 02/04/2009 | EP1466367B1 Non-volatile two-transistor semiconductor memory cell and method for producing the same |
| 02/04/2009 | EP1417704B1 Method of manufacturing a non-volatile memory transistor with an access gate on one side of a control gate/floating-gate stack using a spacer |
| 02/04/2009 | EP1169735B1 Semiconductor radiation emitter package |
| 02/04/2009 | EP0951071B1 Semiconductor device |
| 02/04/2009 | EP0916157B1 Method of fabricating thin film ferroelectric capacitors having improved memory retention through the use of smooth bottom electrode structures |
| 02/04/2009 | CN101361199A Engineered structure for solid-state light emitters |
| 02/04/2009 | CN101361196A Single stress liner for migration stability and speed |
| 02/04/2009 | CN101361195A Varactor element and low distortion varactor circuit arrangement |
| 02/04/2009 | CN101361194A Apparatus and method for a fast recovery rectifier structure |
| 02/04/2009 | CN101361193A Floating gate structure with high electrostatic discharge performance |
| 02/04/2009 | CN101361192A Semiconductor device |
| 02/04/2009 | CN101361191A Electronic element, current control device, arithmetic device, and display device |
| 02/04/2009 | CN101361190A Solid state imaging device and method for fabricating the same |
| 02/04/2009 | CN101361189A High-performance fet devices and methods |
| 02/04/2009 | CN101359869A Output control device, power source device, circuit device, and converter device |
| 02/04/2009 | CN101359694A Flash memory and manufacturing method therefor |
| 02/04/2009 | CN101359693A Thin film transistor, array substrate having the transistor, and method of manufacturing the array substrate |
| 02/04/2009 | CN101359692A Pixel construction and thin-film transistor thereof |
| 02/04/2009 | CN101359691A Thin-film transistor and manufacture method thereof |
| 02/04/2009 | CN101359690A TFT construction and grey level masking plate construction |
| 02/04/2009 | CN101359689A Semiconductor device and method for manufacturing same |
| 02/04/2009 | CN101359688A Semiconductor device |
| 02/04/2009 | CN101359687A MOS element |