Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2008
12/31/2008CN101335297A Semiconductor device and manufacturing method thereof
12/31/2008CN101335296A Semiconductor device and method for manufacturing same
12/31/2008CN101335295A Lateral bipolar transistor and method of production
12/31/2008CN101335294A Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit
12/31/2008CN101335293A Semiconductor device and manufacturing method thereof
12/31/2008CN101335276A Semiconductor device and manufacturing method thereof
12/31/2008CN101335275A Semiconductor device and manufacturing method thereof
12/31/2008CN101335274A Semiconductor device and manufacturing method thereof
12/31/2008CN101335271A Disposal programmable device and manufacturing method therefor
12/31/2008CN101335268A Metal insulator metal capacitor and method of manufacturing the same
12/31/2008CN101335212A Semiconductor device and manufacturing method thereof
12/31/2008CN101335211A Lateral DMOS device and method for fabricating the same
12/31/2008CN101335209A Flash memory device and methods for fabricating the same
12/31/2008CN101335207A Semiconductor device and method for fabricating the same
12/31/2008CN101335203A Layered structure and its manufacturing method
12/31/2008CN101335202A Method for manufacturing display apparatus
12/31/2008CN101334548A 液晶显示装置 The liquid crystal display device
12/31/2008CN100448272C Solid-state imaging device, method of driving same, and camera apparatus
12/31/2008CN100448054C Active matrix organic light-emitting display device
12/31/2008CN100448052C Flat panel display with anode electrode layer as power supply layer and fabrication method thereof
12/31/2008CN100448031C Bottom gate thin film transistor, flat panel display having the same and method of fabricating the same
12/31/2008CN100448030C Semiconductor device and method of fabricating the same
12/31/2008CN100448029C Thin film transistor and method of fabricating the same
12/31/2008CN100448028C A MOS resistor and its manufacture method
12/31/2008CN100448027C An asymmetric Schottky barrier MOS transistor and its manufacture method
12/31/2008CN100448026C Semiconductor structure and forming method thereof
12/31/2008CN100448025C Semiconductor device having reduced gate charge and reduced on resistance and method
12/31/2008CN100448024C Bipolar transistor with graded base layer
12/31/2008CN100448023C Semiconductor device having a U-shaped gate structure
12/31/2008CN100448022C Method and system for forming active device thread electrical connections
12/31/2008CN100448013C Solid state image pickup apparatus and radiation image pickup apparatus
12/31/2008CN100448009C Non-volatile memory and manufacturing method
12/31/2008CN100448000C Symmetrical high frequency SCR structure and method
12/31/2008CN100447988C Semiconductor device and mfg. method thereof
12/31/2008CN100447986C Uniform bitline strapping of non-volatile memory cell
12/31/2008CN100447980C Process for producing semiconductor integrated circuit device
12/31/2008CN100447976C Semiconductor device having reduced capacitance to substrate and method
12/31/2008CN100447965C Manufacturing process of semiconductor device and semiconductor device
12/31/2008CN100447964C Production of thin-film transistor
12/31/2008CN100447957C Manufacture of semiconductor integrated circuit device
12/31/2008CN100447953C High temperature oxide deposition method for EEPROM device
12/31/2008CN100447952C Ion doping device, ion doping method and semiconductor device
12/31/2008CN100447949C Semiconductor device and manufacturing method thereof, integrated circuit, electro-optic device, and electronic equipment
12/31/2008CN100447941C Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity, and a structure of such film regions
12/31/2008CN100447903C Method and apparatus for boosting bitlines for low vcc read
12/31/2008CN100447902C Semiconductor memory device and non-volatile memory verifying method
12/31/2008CN100447645C Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof
12/31/2008CN100447642C Pixel structure and its making method
12/31/2008CN100447627C Liquid crystal display panel and method of fabricating the same
12/30/2008US7471548 Structure of static random access memory with stress engineering for stability
12/30/2008US7471368 Liquid crystal electrooptical device
12/30/2008US7471271 Display device and driving method of the same
12/30/2008US7470998 Semiconductor device and method of manufacturing the same
12/30/2008US7470997 Wirebond pad for semiconductor chip or wafer
12/30/2008US7470996 Packaging method
12/30/2008US7470995 Integrated circuit (IC) carrier assembly with suspension means
12/30/2008US7470994 Bonding pad structure and method for making the same
12/30/2008US7470992 Barrier layer stack to prevent Ti diffusion
12/30/2008US7470991 Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor
12/30/2008US7470990 Low moisture absorptive circuitized substrate with reduced thermal expansion, method of making same, electrical assembly utilizing same, and information handling system utilizing same
12/30/2008US7470989 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
12/30/2008US7470988 Chip structure and process for forming the same
12/30/2008US7470984 Perpendicularly oriented electrically active element method and system
12/30/2008US7470974 Substantially transparent material for use with light-emitting device
12/30/2008US7470973 Semiconductor device and semiconductor integrated circuit device
12/30/2008US7470972 Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress
12/30/2008US7470971 Anodically bonded ultra-high-vacuum cell
12/30/2008US7470970 Prepared by making use of orientation (plane) dependence of the oxygen doping to GaN; non-C-plane growth enables the growing GaN crystal to accept oxygen effectively; for producing light emitting diodes, laser diodes or other electronic devices of groups 3 and 5 nitride semiconductors
12/30/2008US7470967 Self-aligned silicon carbide semiconductor devices and methods of making the same
12/30/2008US7470964 Magnetic memory and manufacturing method thereof
12/30/2008US7470961 Semiconductor device and method of manufacturing the same
12/30/2008US7470960 High-voltage power semiconductor device with body regions of alternating conductivity and decreasing thickness
12/30/2008US7470956 Semiconductor device and manufacturing method thereof
12/30/2008US7470955 Technique for improving negative potential immunity of an integrated circuit
12/30/2008US7470954 Fabrication method for arranging ultra-fine particles
12/30/2008US7470953 Insulated gate type semiconductor device and manufacturing method thereof
12/30/2008US7470952 Power IGBT with increased robustness
12/30/2008US7470951 Hybrid-FET and its application as SRAM
12/30/2008US7470950 Thin film transistor substrate and display apparatus having the same
12/30/2008US7470948 Memory cell array structures in NAND flash memory devices
12/30/2008US7470947 Semiconductor memory and fabrication method for the same
12/30/2008US7470942 Thin film transistor array and electrostatic discharge protective device thereof
12/30/2008US7470941 High power-low noise microwave GaN heterojunction field effect transistor
12/30/2008US7470940 Ultraviolet detector
12/30/2008US7470938 Nitride semiconductor light emitting device
12/30/2008US7470936 Light emitting diode with a step section between the base and the lens of the diode
12/30/2008US7470932 Liquid crystal display panel and fabricating method thereof
12/30/2008US7470931 Thin film transistor and flat panel display using the same
12/30/2008US7470930 Silicon carbide semiconductor device
12/30/2008US7470929 Fuse/anti-fuse structure and methods of making and programming same
12/30/2008US7470926 Solid-state optical device
12/30/2008US7470925 Magnetic body, magnetic device using the same, and method of manufacturing the same
12/30/2008US7470924 Phase change RAM device with increased contact area between word line and active area
12/30/2008US7470923 Semiconductor integrated circuit device
12/30/2008US7470803 4-(trifluoromethyl)benzyl-4-(4-(triethoxysilyl)butyloxy)phenylsulfone; 4-methylbenzyl-4-(12-(phosphono)dodecyloxy)phenyl sulfone; capable of undergoing surface alteration by irradiation with relatively low energy wavelength, and of forming an organic thin film on a substrate with good reproducibility
12/30/2008US7470635 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry, methods of forming trench isolation in the fabrication of integrated circuitry, methods of depositing silicon dioxide-comprising layers in the fabrication of integrated circuitry, and methods of forming bit line over capacitor arrays of memory cells
12/30/2008US7470629 Structure and method to fabricate finfet devices
12/30/2008US7470620 Microcircuit fabrication and interconnection
12/30/2008US7470618 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
12/30/2008US7470611 In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
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