| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/12/2009 | US20090039395 Solid state image sensor |
| 02/12/2009 | US20090039394 Semiconductor device |
| 02/12/2009 | US20090039393 Semiconductor device and method for manufacturing same |
| 02/12/2009 | US20090039392 Iii-nitride power semiconductor device |
| 02/12/2009 | US20090039391 Semiconductor device and method for fabricating the same |
| 02/12/2009 | US20090039390 Cmos transistor junction regions formed by a cvd etching and deposition sequence |
| 02/12/2009 | US20090039389 Method of fabricating metal oxide semiconductor transistor |
| 02/12/2009 | US20090039388 Integrated circuit system employing a condensation process |
| 02/12/2009 | US20090039386 Semiconductor Device |
| 02/12/2009 | US20090039385 Semiconductor devices |
| 02/12/2009 | US20090039384 Power rectifiers and method of making same |
| 02/12/2009 | US20090039365 Semiconductor light emitting devices with applied wavelength conversion materials and methods of forming the same |
| 02/12/2009 | US20090039361 Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| 02/12/2009 | US20090039358 SiC Crystal Semiconductor Device |
| 02/12/2009 | US20090039357 Stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors |
| 02/12/2009 | US20090039356 Planar nonpolar m-plane group iii-nitride films grown on miscut substrates |
| 02/12/2009 | US20090039355 Display Device |
| 02/12/2009 | US20090039352 Display device and electronic device having the display device, and method for manufacturing thereof |
| 02/12/2009 | US20090039351 Display device and manufacturing method thereof |
| 02/12/2009 | US20090039350 Display panel and method of manufacturing the same |
| 02/12/2009 | US20090039349 Manufacturing method of semiconductor device, manufacturing method of display device, semiconductor device, display device, and electronic device |
| 02/12/2009 | US20090039346 Mesoporous Thin Film and Method of Producing the Same |
| 02/12/2009 | US20090039345 Tunnel Junction Barrier Layer Comprising a Diluted Semiconductor with Spin Sensitivity |
| 02/12/2009 | US20090039274 Surface contamination analyzer for semiconductor wafers, method used therein and process for fabricating semiconductor device |
| 02/12/2009 | DE19900171B4 Siliziumkarbid-Halbleiteranordnung und Verfahren zu deren Herstellung Silicon carbide semiconductor device and process for their preparation |
| 02/12/2009 | DE112007000392T5 Laterale Leistungseinrichtungen mit Elektroden mit automatischer Vorspannung Lateral power devices with electrodes self-bias |
| 02/12/2009 | DE10349908C5 Verfahren zur Herstellung eines zweifach passivierten Leistungshalbleiterbauelements mit einer MESA Randstruktur A process for producing a double-passivated power semiconductor device having a mesa edge structure |
| 02/12/2009 | DE10335813B4 IC-Chip mit Nanowires IC chip with nanowires |
| 02/12/2009 | DE10335103B4 Feldeffekttransistor mit einer dotierten Gateelektrode mit reduzierter Gateverarmung und Verfahren zur Herstellung des Transistors Field effect transistor having a gate electrode doped with reduced gate depletion and methods of manufacturing the transistor |
| 02/12/2009 | DE102008026828A1 Bildung von nitrid-basierten optoelektronischen und elektronischen Bauteilstrukturen auf gitterangepassten Substraten Formation of nitride-based optoelectronic and electronic device structures on lattice matched substrates |
| 02/12/2009 | DE102007063593B4 Halbleiterbauelement Semiconductor device |
| 02/11/2009 | EP2023403A1 Ultraviolet photosensor |
| 02/11/2009 | EP2022096A2 Trench widening without merging |
| 02/11/2009 | EP1640402B1 Diamine having quinoxaline unit, polyimide precursor, polyimide and use thereof |
| 02/11/2009 | EP1433201A4 Method for fabricating a power semiconductor device having a floating island voltage sustaining layer |
| 02/11/2009 | EP0852813B1 Integrated circuit device with embedded flash memory and method for manufacturing same |
| 02/11/2009 | CN101366124A Ultrafast recovery diode |
| 02/11/2009 | CN101366123A Jfet with drain and/or source modification implant |
| 02/11/2009 | CN101366122A U-gate transistors and methods of fabrication |
| 02/11/2009 | CN101366121A Vertical structure semiconductor devices |
| 02/11/2009 | CN101366114A Method and apparatus for providing an integrated circuit having p and n doped gates |
| 02/11/2009 | CN101366105A Semiconductor device and method for manufacturing same |
| 02/11/2009 | CN101366104A P channel MOS transistor and semiconductor integrated circuit equipment |
| 02/11/2009 | CN101364617A Semiconductor device and manufacturing method of the same |
| 02/11/2009 | CN101364616A Lateral pocket implant charge trapping devices |
| 02/11/2009 | CN101364615A Nonvolatile memory and forming method for the same |
| 02/11/2009 | CN101364614A Non-volatile flash memory cell, array and method of manufacturing same |
| 02/11/2009 | CN101364613A Semiconductor component with dynamic behavior |
| 02/11/2009 | CN101364612A High-voltage MOS transistor |
| 02/11/2009 | CN101364611A High-voltage metal oxide semiconductor tansistor |
| 02/11/2009 | CN101364610A Groove type power metal oxide semiconductor and preparation thereof |
| 02/11/2009 | CN101364602A Blocking dielectric engineered charge trapping memory cell with high speed erase |
| 02/11/2009 | CN101364600A Low power circuit structure with metal gate and high-k dielectric |
| 02/11/2009 | CN101364596A Semiconductor device |
| 02/11/2009 | CN101364594A Silicon based single electron neure quantum circuit |
| 02/11/2009 | CN101364553A Method and construction enhancing measurement accuracy of LDD doping layer square resistor |
| 02/11/2009 | CN101364546A Fet device with stabilized threshold modifying material and method thereof |
| 02/11/2009 | CN101364545A Germanium-silicon and polycrystalline silicon grating construction of strain silicon transistor |
| 02/11/2009 | CN101364543A Semiconductor device and method for manufacturing same |
| 02/11/2009 | CN101364541A Recess gate of semiconductor device and method for forming thereof |
| 02/11/2009 | CN101364539A Gate layer manufacturing method, semiconductor device manufacturing method and semiconductor construction |
| 02/11/2009 | CN101364537A Manufacturing method for grid and semiconductor device, construction for manufacturing grid |
| 02/11/2009 | CN101364532A MIM capacitor and manufacturing method thereof, semiconductor device and manufacturing method thereof |
| 02/11/2009 | CN101364018A Electro-optical device and electronic apparatus |
| 02/11/2009 | CN100461822C Driver circuit |
| 02/11/2009 | CN100461564C Semiconductor laser apparatus |
| 02/11/2009 | CN100461486C Oriented polymer used for organic TFT |
| 02/11/2009 | CN100461459C Method for manufacturing semiconductor device and method for manufacturing electronic apparatus |
| 02/11/2009 | CN100461458C High voltage devices and making method thereof |
| 02/11/2009 | CN100461457C High-voltage field-effect transistor and method of making a high-voltage field-effect transistor |
| 02/11/2009 | CN100461456C Semiconductor device and manufacturing method thereof |
| 02/11/2009 | CN100461455C Semiconductor structure and forming method thereof, transverse diffusion p-type mos device |
| 02/11/2009 | CN100461454C Semiconductor element and method of forming the same |
| 02/11/2009 | CN100461453C Metal oxide semiconductor transistor and production thereof |
| 02/11/2009 | CN100461452C Metal-oxide-semiconductor device having trenched diffusion region and method of forming same |
| 02/11/2009 | CN100461451C Method and structure to create multiple device widths in FINFET technology |
| 02/11/2009 | CN100461450C Semiconductor device and method for fabricating the same |
| 02/11/2009 | CN100461449C Semiconductor device and method for manufacturing semiconductor device |
| 02/11/2009 | CN100461448C Wafer-level seal for non-silicon-based devices |
| 02/11/2009 | CN100461447C Semiconductor devices and methods for fabricating the same |
| 02/11/2009 | CN100461446C Strained Si MOSFET on tensile-strained sige-on-insulator (SGOI) |
| 02/11/2009 | CN100461432C Thin film transistor channel structure |
| 02/11/2009 | CN100461427C Nonvolatile semiconductor storage device and manufacturing method therefor |
| 02/11/2009 | CN100461424C Structure and method for semiconductor integrated circuit tunnel oxidation window region design |
| 02/11/2009 | CN100461416C Semiconductor device |
| 02/11/2009 | CN100461415C Field effect transistor and manufacturing method thereof |
| 02/11/2009 | CN100461414C Semiconductor device and manufacturing method thereof |
| 02/11/2009 | CN100461411C Semiconductor device |
| 02/11/2009 | CN100461406C Inspection substrate for display device |
| 02/11/2009 | CN100461399C Electrostatic-discharging protective component structure |
| 02/11/2009 | CN100461378C Method for making array lining with driving integrated circuit |
| 02/11/2009 | CN100461374C Nonvolatile memory unit, manufacturing method, and opertion method |
| 02/11/2009 | CN100461352C Interconnect structures and forming method thereof |
| 02/11/2009 | CN100461348C Silicon-based material layer, forming method, structure, device, emitter and display incorporating the silicon-based material layer |
| 02/11/2009 | CN100461339C Compound semiconductor element, manufacturing method of compound semiconductor element, diode element |
| 02/11/2009 | CN100461337C Method for forming pattern, thin film transistor, display device and method for manufacturing the same and application |
| 02/11/2009 | CN100461294C Ferroelectric memory |
| 02/11/2009 | CN100461293C Semiconductor memory device provided with magneto-resistive element |
| 02/11/2009 | CN100461000C Method for forming metal pattern with low resistivity |
| 02/11/2009 | CN100460969C Array substrate of LCD and method of fabricating of the same |