| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/29/2009 | US20090026552 Method for forming a transistor having gate dielectric protection and structure |
| 01/29/2009 | US20090026549 Method to remove spacer after salicidation to enhance contact etch stop liner stress on mos |
| 01/29/2009 | US20090026548 Systems And Methods For Fabricating Nanometric-Scale Semiconductor Devices With Dual-Stress Layers Using Double-Stress Oxide/Nitride Stacks |
| 01/29/2009 | US20090026545 Integrated circuit employing variable thickness film |
| 01/29/2009 | US20090026544 Semiconductor device |
| 01/29/2009 | US20090026542 Integrated circuit including a semiconductor assembly in thin-soi technology |
| 01/29/2009 | US20090026541 Vertical floating body cell of a semiconductor device and method for fabricating the same |
| 01/29/2009 | US20090026540 Semiconductor device and method for producing the same |
| 01/29/2009 | US20090026539 Method and Layout of Semiconductor Device with Reduced Parasitics |
| 01/29/2009 | US20090026538 Semiconductor device and method of manufacturing the same |
| 01/29/2009 | US20090026537 Semiconductor device and method of manufacturing the same |
| 01/29/2009 | US20090026536 Trench gate semiconductor device and method for fabricating the same |
| 01/29/2009 | US20090026535 Semiconductor device |
| 01/29/2009 | US20090026534 Trench MOSFET and method of making the same |
| 01/29/2009 | US20090026533 Trench MOSFET with multiple P-bodies for ruggedness and on-resistance improvements |
| 01/29/2009 | US20090026532 Short circuit limiting in power semiconductor devices |
| 01/29/2009 | US20090026531 Method for insulating a semiconducting material in a trench from a substrate |
| 01/29/2009 | US20090026530 Methods of fabricating dual fin structures and semiconductor device structures with dual fins |
| 01/29/2009 | US20090026529 Semiconductor device and method for manufacturing the same |
| 01/29/2009 | US20090026528 Flash Memory Cell and Method of Manufacturing the Same and Programming/Erasing Reading Method of Flash Memory Cell |
| 01/29/2009 | US20090026526 Integrated circuit devices including a multi-layer structure with a contact extending therethrough and methods of forming the same |
| 01/29/2009 | US20090026525 Memory and method for fabricating the same |
| 01/29/2009 | US20090026524 Stacked Circuits |
| 01/29/2009 | US20090026523 Partially gated finfet |
| 01/29/2009 | US20090026522 Semiconductor device comprising transistor structures and methods for forming same |
| 01/29/2009 | US20090026521 Self-biasing transistor structure and an sram cell having less than six transistors |
| 01/29/2009 | US20090026518 Dram cylindrical capacitor |
| 01/29/2009 | US20090026515 Semiconductor memory device and method of forming the same |
| 01/29/2009 | US20090026514 Semiconductor device and manufacturing method thereof |
| 01/29/2009 | US20090026507 Semiconductor device and method of fabricating same |
| 01/29/2009 | US20090026505 Semiconductor device and method of fabricating the same |
| 01/29/2009 | US20090026504 Semiconductor Device and Method of Manufacturing Semiconductor Device |
| 01/29/2009 | US20090026501 Enhancement - depletion semiconductor structure and method for making it |
| 01/29/2009 | US20090026500 Semiconductor Device and Method of Manufacturing Such a Device |
| 01/29/2009 | US20090026499 Semiconductor integrated circuit device and semiconductor switching device using thereof |
| 01/29/2009 | US20090026498 Field effect transistor and method for fabricating the same |
| 01/29/2009 | US20090026497 Method for Producing Semiconductor Device |
| 01/29/2009 | US20090026496 Methods of making substitutionally carbon-doped crystalline si-containing materials by chemical vapor deposition |
| 01/29/2009 | US20090026495 LAYER TRANSFER OF LOW DEFECT SiGe USING AN ETCH-BACK PROCESS |
| 01/29/2009 | US20090026492 Lateral junction breakdown triggered silicon controlled rectifier based electrostatic discharge protection device |
| 01/29/2009 | US20090026491 Tunneling effect transistor with self-aligned gate |
| 01/29/2009 | US20090026466 QUASI SINGLE CRYSTAL NITRIDE SEMICONDUCTOR LAYER GROWN OVER POLYCRYSTALLINE SiC SUBSTRATE |
| 01/29/2009 | US20090026465 Polysilicon film having smooth surface and method of forming the same |
| 01/29/2009 | US20090026464 Semiconductor device and manufacturing method thereof |
| 01/29/2009 | US20090026462 Wiring substrate and method of manufacturing same, and display device |
| 01/29/2009 | US20090026460 Vertical non-volatile memory and manufacturing method thereof |
| 01/29/2009 | US20090026459 Epitaxial and polycrystalline growth of si1-x-ygexcy and si1-ycy alloy layers on si by uhv-cvd |
| 01/29/2009 | US20090026458 Porous semiconductive film and process for its production |
| 01/29/2009 | US20090026457 Active matrix substrate, method of making the substrate, and display device |
| 01/29/2009 | US20090026454 Display device |
| 01/29/2009 | US20090026453 Display device and manufacturing method thereof |
| 01/29/2009 | US20090026452 Liquid crystal display device and electronic device provided with the same |
| 01/29/2009 | US20090026450 Thin film transistor substrate and method of manufacturing the same |
| 01/29/2009 | US20090026449 Pixel structure and method of fabricating the same |
| 01/29/2009 | US20090026442 Continuous plane of thin-film materials for a two-terminal cross-point memory |
| 01/29/2009 | US20090026441 Continuous plane of thin-film materials for a two-terminal cross-point memory |
| 01/29/2009 | US20090026432 Method and structure for uniform contact area between heater and phase change material in pcram device |
| 01/29/2009 | US20090025478 Acceleration sensor |
| 01/29/2009 | DE112007000803T5 Ladungsgleichgewichtstechniken für Leistungsvorrichtungen Charge balance techniques for power devices |
| 01/29/2009 | DE112007000802T5 Leistungsvorrichtung mit verbessertem Randabschluss Power device with improved edge termination |
| 01/29/2009 | DE112007000760T5 Struktur und Herstellungsverfahren für eine selektiv abgeschiedene Verkappungsschicht auf einem epitaxial aufgewachsenen Source-Drain Structure and manufacturing method for a selectively deposited capping layer epitaxially grown on a source-drain |
| 01/29/2009 | DE112007000700T5 Trench-FET mit hoher Dichte und integrierter Schottky-Diode und Herstellungsverfahren Trench FET with high density and integrated Schottky diode and manufacturing processes |
| 01/29/2009 | DE112007000667T5 Vereinigter Gate-Kaskoden-Transistor United gate cascode transistor |
| 01/29/2009 | DE10245770B4 Ausgangsschaltkreis Output circuit |
| 01/29/2009 | DE102007060238A1 Verfahren zum Herstellen einer Halbleitervorrichtung mit einer Gate-Stapelstruktur A method of manufacturing a semiconductor device having a gate stack structure |
| 01/29/2009 | DE102004059350B4 Nichtflüchtiges Halbleiterspeicherbauelement The non-volatile semiconductor memory device |
| 01/29/2009 | DE102004003863B4 Technik zur Herstellung eingebetteter Metallleitungen mit einer erhöhten Widerstandsfähigkeit gegen durch Belastung hervorgerufenen Materialtransport Technology for the production of embedded metal lines with increased resistance caused by load material handling |
| 01/29/2009 | DE10146013B4 Halbleitervorrichtungsherstellungsverfahren The semiconductor device manufacturing method |
| 01/29/2009 | DE10031624B4 Verfahren zur Herstellung eines Transistors mit erhöhten Source- und Drain-Bereichen A method of manufacturing a transistor with raised source and drain regions |
| 01/28/2009 | EP2019430A1 Semiconductor non volatile memory device and method of producing the same |
| 01/28/2009 | EP2019082A1 Method for fixing metal nanoparticle |
| 01/28/2009 | EP2018671A1 Low optical loss electrode structures for leds |
| 01/28/2009 | EP2018663A1 Semiconductor devices including self aligned refractory contacts and methods of fabricating the same |
| 01/28/2009 | EP2018662A2 Power mosfet contact metallization |
| 01/28/2009 | EP1927128A4 Multiple low and high k gate oxides on single gate for lower miller capacitance and improved drive current |
| 01/28/2009 | EP1593162A4 Semiconductor device, production method thereof and light-emitting device |
| 01/28/2009 | EP1565944A4 Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
| 01/28/2009 | EP1008177B1 Improved active matrix esd protection and testing scheme |
| 01/28/2009 | CN101356653A Photo field effect transistor and integrated photo detector using the same |
| 01/28/2009 | CN101356652A Semiconductor device including an oxide semiconductor thin film layer of zinc oxide and manufacturing method thereof |
| 01/28/2009 | CN101356651A Laminated structure, electronic element using the same, manufacturing method thereof, electronic element array, and display unit |
| 01/28/2009 | CN101356650A Semiconductor device and display device |
| 01/28/2009 | CN101356649A Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
| 01/28/2009 | CN101356639A Semiconductor device and process for producing the same |
| 01/28/2009 | CN101356632A Method for manufacturing semiconductor device |
| 01/28/2009 | CN101356627A Enhanced multi-volatile memory device with resonant tunnel barrier |
| 01/28/2009 | CN101356626A Metal film decarbonizing method, film forming method and semiconductor device manufacturing method |
| 01/28/2009 | CN101356624A Laser annealing method and laser annealing apparatus |
| 01/28/2009 | CN101356557A Active matrix substrate, display device and television receiver |
| 01/28/2009 | CN101355314A Circuit for detecting commutation failure of back-to-back silicon-control rectifying circuit and control method thereof |
| 01/28/2009 | CN101355106A Semiconductor device |
| 01/28/2009 | CN101355105A Semiconductor device and method of manufacturing the same |
| 01/28/2009 | CN101355104A Semiconductor device and method of manufacturing the same |
| 01/28/2009 | CN101355103A DMOS type semiconductor device and manufacturing method thereof |
| 01/28/2009 | CN101355102A Semiconductor device and method for forming the same |
| 01/28/2009 | CN101355101A Electrostatic induction device with multi-groove structure and preparation method thereof |
| 01/28/2009 | CN101355100A Bipolar transistor and method for the production thereof |
| 01/28/2009 | CN101355099A Gate dielectric material silicic acid lanthanum film with high dielectric coefficient as well as preparation method and use thereof |
| 01/28/2009 | CN101355089A 显示装置 The display device |
| 01/28/2009 | CN101355086A Capacitorless dram and methods of manufacturing and operating the same |