| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/01/2009 | US20090001430 Eliminate notching in si post si-recess rie to improve embedded doped and instrinsic si epitazial process |
| 01/01/2009 | US20090001429 Hybrid strained orientated substrates and devices |
| 01/01/2009 | US20090001426 Integrated Fin-Local Interconnect Structure |
| 01/01/2009 | US20090001423 Field-effect transistor and method of making same |
| 01/01/2009 | US20090001422 Semiconductor apparatus and manufacturing method thereof |
| 01/01/2009 | US20090001420 Semiconductor device and method for manufacturing semiconductor device |
| 01/01/2009 | US20090001419 Non-Volatile Memory Devices and Methods of Fabricating the Same |
| 01/01/2009 | US20090001417 Structures and methods of forming sige and sigec buried layer for soi/sige technology |
| 01/01/2009 | US20090001416 Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD) |
| 01/01/2009 | US20090001415 Multi-gate transistor with strained body |
| 01/01/2009 | US20090001414 Structures and methods of forming sige and sigec buried layer for soi/sige technology |
| 01/01/2009 | US20090001413 METHOD OF DOPING FIELD-EFFECT-TRANSISTORS (FETs) WITH REDUCED STRESS/STRAIN RELAXATION AND RESULTING FET DEVICES |
| 01/01/2009 | US20090001411 Semiconductor device |
| 01/01/2009 | US20090001410 Driver Circuit and Electrical Power Conversion Device |
| 01/01/2009 | US20090001387 Method for manufacturing semiconductor device |
| 01/01/2009 | US20090001384 Group III Nitride semiconductor HFET and method for producing the same |
| 01/01/2009 | US20090001382 Schottky barrier diode and method for making the same |
| 01/01/2009 | US20090001381 Semiconductor device |
| 01/01/2009 | US20090001380 Thin film transistor, method of fabricating the same, organic light emitting diode display device including the same and method of fabricating the same |
| 01/01/2009 | US20090001379 Semiconductor device |
| 01/01/2009 | US20090001377 Pixel structure and fabrication method thereof |
| 01/01/2009 | US20090001376 Poly crystalline silicon semiconductor device and method of fabricating the same |
| 01/01/2009 | US20090001375 Light-emitting device |
| 01/01/2009 | US20090001373 Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit |
| 01/01/2009 | US20090001372 Efficient cooling of lasers, LEDs and photonics devices |
| 01/01/2009 | US20090001371 Blocking pre-amorphization of a gate electrode of a transistor |
| 01/01/2009 | US20090001363 Zinc oxide semiconductor and method of manufacturing the same |
| 01/01/2009 | US20090001356 Electronic devices having a solution deposited gate dielectric |
| 01/01/2009 | US20090001352 Non-Volatile Memory Device, Method of Manufacturing the Same, and Semiconductor Package |
| 01/01/2009 | US20090001350 High hole mobility semiconductor device |
| 01/01/2009 | US20090001348 Semiconductor device |
| 01/01/2009 | US20090001337 Phase Change Memory Cell with Vertical Transistor |
| 01/01/2009 | US20090001329 Rare earth-oxides, rare earth-nitrides, rare earth-phosphies, and ternary alloys with silicon |
| 12/31/2008 | WO2009003176A1 Optical designs for high-efficacy white-light emitting diodes |
| 12/31/2008 | WO2009003091A1 Method for fabricating a 3-d integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon |
| 12/31/2008 | WO2009003012A1 Junction field effect transistor with a hyperabrupt junction |
| 12/31/2008 | WO2009002871A1 Floating gate flash cell |
| 12/31/2008 | WO2009002698A1 Micro-electro-mechanical system varactor |
| 12/31/2008 | WO2009002476A2 Nonvolatile memory device containing a carbon- or nitrogen-doped diode and methods of making andoperating the same |
| 12/31/2008 | WO2009002305A1 Photovoltaic device including semiconductor nanocrystals |
| 12/31/2008 | WO2009002301A1 System and method for automatic elimination of voltage drop |
| 12/31/2008 | WO2009001935A1 Method for forming thin film, method for manufacturing organic electroluminescent device, method for manufacturing semiconductor device, and method for manufacturing optical device |
| 12/31/2008 | WO2009001888A1 Field-effect transistor and multilayer epitaxial film for use in fabrication of the filed-effect transistor |
| 12/31/2008 | WO2009001836A1 Manufacturing method of semiconductor device |
| 12/31/2008 | WO2009001832A1 Display device and sputtering target |
| 12/31/2008 | WO2009001830A1 Mechanical quantity sensor and its manufacturing method |
| 12/31/2008 | WO2009001816A1 Method for forming organic semiconductor thin film |
| 12/31/2008 | WO2009001815A1 Mechanical quantity sensor and its manufacturing method |
| 12/31/2008 | WO2009001733A1 Semiconductor device |
| 12/31/2008 | WO2009001706A1 Magnetoresistive element and magnetic random access memory |
| 12/31/2008 | WO2009001599A1 Light-emitting element array, light-emitting device, and image forming device |
| 12/31/2008 | WO2009001488A1 Diaphragm structure and acoustic sensor |
| 12/31/2008 | WO2009001252A1 An extended drain transistor and a method of manufacturing the same |
| 12/31/2008 | WO2009000136A1 Polycrystalline silicon thin film transistors with bridged-grain structures |
| 12/31/2008 | WO2008137478A3 Small geometry mos transistor with thin polycrystalline surface contacts and method for making |
| 12/31/2008 | WO2007139852A8 Highly efficient both-side-cooled discrete power package, especially basic element for innovative power modules |
| 12/31/2008 | WO2007135694A8 Three- terminal power device with high switching speed and manufacturing process |
| 12/31/2008 | WO2005094271A3 Colloidal quantum dot light emitting diodes |
| 12/31/2008 | EP2009700A1 Transistor element, its manufacturing method, light emitting element, and display |
| 12/31/2008 | EP2009699A2 Supermolecular structures and devices made from same |
| 12/31/2008 | EP2009698A2 Semiconductor radiation detector and method to operate it |
| 12/31/2008 | EP2009694A2 Semiconductor device and manufacturing method thereof |
| 12/31/2008 | EP2009688A2 Semiconductor device and method of manufacturing the same |
| 12/31/2008 | EP2009682A1 FinFET field-effect transistor isolated from the substrate |
| 12/31/2008 | EP2009679A1 Semiconductor device |
| 12/31/2008 | EP2009672A1 Conductive isostructural compounds |
| 12/31/2008 | EP2009643A1 Steering gate and bit line segmentation in non-volatile memories |
| 12/31/2008 | EP2008310A1 Semiconductor device and method of manufacturing the same |
| 12/31/2008 | EP2008309A1 Etched nanofin transistors |
| 12/31/2008 | EP2008300A2 Self-aligned body contact for an semiconductor-on-insulator trench device and method of fabricating same |
| 12/31/2008 | EP1685584A4 SILICON DEVICE ON Si:C-OI and SGOI AND METHOD OF MANUFACTURE |
| 12/31/2008 | EP1506574B1 Method of manufacturing a semiconductor non-volatile memory |
| 12/31/2008 | EP1454353A4 Method of forming narrow trenches in semiconductor substrates |
| 12/31/2008 | EP1454352A4 Method for forming trench mosfet device with low parasitic resistance |
| 12/31/2008 | EP1175628B1 Accelerometer transducer used for seismic recording |
| 12/31/2008 | EP1116269B1 Complementary bipolar/cmos epitaxial structure and process |
| 12/31/2008 | EP1051756B1 Mos field effect transistor with an auxiliary electrode |
| 12/31/2008 | CN201174384Y Power transistor of MOS construction |
| 12/31/2008 | CN201174012Y Semi-transmission semi-reflection TFT liquid crystal display |
| 12/31/2008 | CN101336486A Memory cell using a dielectric having non-uniform thickness |
| 12/31/2008 | CN101336485A TFT substrate and TFT substrate manufacturing method |
| 12/31/2008 | CN101336484A Semiconductor and its manufacture method |
| 12/31/2008 | CN101336483A High mobility power metal-oxide semiconductor field-effect transistors |
| 12/31/2008 | CN101336482A Low density drain hemts |
| 12/31/2008 | CN101336481A Split gate memory cell in a finfet |
| 12/31/2008 | CN101336480A Charge balance insulated gate bipolar transistor |
| 12/31/2008 | CN101336479A Phosphors protected against moisture and led lighting devices |
| 12/31/2008 | CN101336473A Method for manufacturing silicon carbide semiconductor device |
| 12/31/2008 | CN101336472A Multigate device with recessed strain regions |
| 12/31/2008 | CN101336465A Low area screen printed metal contact structure and method |
| 12/31/2008 | CN101335307A Semiconductor voltage-stabilizing device and manufacturing method therefor |
| 12/31/2008 | CN101335306A Silicone oxide non-volatile memory unit ultra-high in silicone and manufacturing method therefor |
| 12/31/2008 | CN101335305A Non-volatile memory and method of manufacturing same |
| 12/31/2008 | CN101335304A Semiconductor device and manufacturing method thereof |
| 12/31/2008 | CN101335303A Light-emitting device |
| 12/31/2008 | CN101335302A Thin film transistor and organic led display and method of fabricating the same |
| 12/31/2008 | CN101335301A Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same |
| 12/31/2008 | CN101335300A Semiconductor device and method for manufacturing |
| 12/31/2008 | CN101335299A Semiconductor device and method for manufacturing |
| 12/31/2008 | CN101335298A Semiconductor device and manufacturing method thereof |