Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2009
02/18/2009CN101369590A Pixel structure
02/18/2009CN101369588A Thin film transistor array panel and manufacturing method thereof
02/18/2009CN101369587A Display apparatus
02/18/2009CN101369584A Non-volatile memory device and method of fabricating the same
02/18/2009CN101369583A Charge trapping memory cell with high speed erase
02/18/2009CN101369581A Memory and its manufacturing method
02/18/2009CN101369580A Single programmable memory and manufacturing method thereof
02/18/2009CN101369577A Bipolar transistor FINFET technology
02/18/2009CN101369532A Structures of and methods of fabricating trench-gated mis devices
02/18/2009CN101369401A Display device and electronic apparatus
02/18/2009CN101369080A Display apparatus
02/18/2009CN100463238C Semiconductor light emitting device, producing method thereof and semiconductor light emitting unit
02/18/2009CN100463228C 化合物半导体装置及其制造方法 The compound semiconductor device and manufacturing method
02/18/2009CN100463227C Non-volatile memory device having a silicon-nitride and silicon oxide dielectric layer
02/18/2009CN100463226C Low delectric coefficient sidewall substructure for flash memory
02/18/2009CN100463225C Display device and method for manufacturing same
02/18/2009CN100463224C Thin-film semiconductor substrate, method of manufacturing the thin-film semiconductor substrate,thin-film semiconductor device, and method of manufacturing the thin-film semiconductor device
02/18/2009CN100463223C Semiconductor device and method for manufacturing the same
02/18/2009CN100463222C Semiconductor device and manufacture method thereof
02/18/2009CN100463221C Semiconductor device and method of manufacturing the same
02/18/2009CN100463220C Semiconductor device
02/18/2009CN100463219C 半导体装置及其制造方法 Semiconductor device and manufacturing method
02/18/2009CN100463218C Semiconductor element
02/18/2009CN100463217C Structure and method of making a high performance semiconductor device having a narrow doping profile
02/18/2009CN100463216C Process for producing schottky junction semiconductor device
02/18/2009CN100463215C Field effect transistor and producing method thereof
02/18/2009CN100463207C Flat panel display device
02/18/2009CN100463193C TFT array structure and its producing method
02/18/2009CN100463186C Capacitor for a semiconductor device and manufacturing method thereof
02/18/2009CN100463184C Method and apparatus for operating paralledl arrangement nonvolatile memory
02/18/2009CN100463182C Ferroelectric memory and method of manufacturing the same
02/18/2009CN100463178C Semiconductor device and boosting circuit
02/18/2009CN100463145C Non-volatile memory and production method thereof
02/18/2009CN100463139C Standard cell, standard cell library, and semiconductor integrated circuit
02/18/2009CN100463134C Semiconductor integrated circuit device
02/18/2009CN100463123C Non-volatile memory cells and methods of manufacturing the same
02/18/2009CN100463122C High voltage power MOSFET having low on-resistance
02/18/2009CN100463121C Heterojunction bipolar transistor
02/18/2009CN100463113C Method of manufacturing semiconductor device having recess gate structure
02/18/2009CN100463018C Active matrix substrate, display device, and pixel defect correcting method
02/18/2009CN100462827C Liquid crystal display device and method of fabricating the same
02/18/2009CN100462825C Array base board structure of thin film transistor liquid crystal display and its producing method
02/18/2009CN100462823C Thin film transistor and electronic device and producing method thereof
02/18/2009CN100462821C Display device and manufacturing method of the same
02/18/2009CN100462702C Pressure sensor and method for manufacturing pressure sensor
02/18/2009CN100462219C Fabrication method at micrometer-and nanometer-scales for generation and control of anisotropy of structural, electrical, optical and optoelectronic properties of thin films of conjugated materials
02/17/2009US7493582 Pattern layout and layout data generation method
02/17/2009US7493353 Stochastic processor, driving method thereof, and recognition process device using the same
02/17/2009US7492643 Nonvolatile semiconductor memory
02/17/2009US7492436 Liquid crystal display device and method of fabricating the same
02/17/2009US7492431 Active matrix liquid crystal display having a thin film transistor over which alignment of liquid crystal molecules does not change
02/17/2009US7492428 Thin film transistor array substrate and fabricating method thereof
02/17/2009US7492338 Display device
02/17/2009US7492230 Method and apparatus for effecting high-frequency amplification or oscillation
02/17/2009US7492208 MOSFET circuit having reduced output voltage oscillations during a switch-off operation
02/17/2009US7492047 Semiconductor device and its manufacture method
02/17/2009US7492035 Semiconductor device and method of manufacturing the same
02/17/2009US7492034 Semiconductor device
02/17/2009US7492032 Fuse regions of a semiconductor memory device and methods of fabricating the same
02/17/2009US7492031 Semiconductor device
02/17/2009US7492030 Techniques to create low K ILD forming voids between metal lines
02/17/2009US7492025 Photo coupler
02/17/2009US7492022 Non-magnetic semiconductor spin transistor
02/17/2009US7492021 Magnetic transistor
02/17/2009US7492020 Micro structure with interlock configuration
02/17/2009US7492018 Isolating substrate noise by forming semi-insulating regions
02/17/2009US7492017 Semiconductor transistor having a stressed channel
02/17/2009US7492013 Systems and arrangements to interconnect components of a semiconductor device
02/17/2009US7492012 Light emitting device and method of manufacturing the same
02/17/2009US7492009 Semiconductor device having silicon on insulator structure and method of fabricating the same
02/17/2009US7492005 Excessive round-hole shielded gate trench (SGT) MOSFET devices and manufacturing processes
02/17/2009US7492004 Transistors having a channel region between channel-portion holes and methods of forming the same
02/17/2009US7492003 Superjunction power semiconductor device
02/17/2009US7492002 Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate
02/17/2009US7492001 High K stack for non-volatile memory
02/17/2009US7492000 Self-aligned split-gate nonvolatile memory structure and a method of making the same
02/17/2009US7491999 Non-volatile memory cells utilizing substrate trenches
02/17/2009US7491998 One time programmable memory and the manufacturing method thereof
02/17/2009US7491997 Memory device and method of manufacturing the same
02/17/2009US7491996 Capacitive element, semiconductor device, and method of manufacturing the capacitive element
02/17/2009US7491995 DRAM with nanofin transistors
02/17/2009US7491994 Ferromagnetic memory cell and methods of making and using the same
02/17/2009US7491990 CMOS image sensors for preventing optical crosstalk
02/17/2009US7491988 Transistors with increased mobility in the channel zone and method of fabrication
02/17/2009US7491987 Junction field effect thin film transistor
02/17/2009US7491983 Nitride-based semiconductor device of reduced current leakage
02/17/2009US7491982 Diode having low forward voltage drop
02/17/2009US7491975 Light-emitting device, method for making the same, and electronic apparatus
02/17/2009US7491973 Semiconductor LSI circuit having a NAND logic gate with a highly integrated and microscopic structure
02/17/2009US7491971 Transistor array panel, liquid crystal display panel, and method of manufacturing liquid crystal display panel
02/17/2009US7491966 Semiconductor substrate and process for producing it
02/17/2009US7491964 Nitridation of STI fill oxide to prevent the loss of STI fill oxide during manufacturing process
02/17/2009US7491963 Non-volatile memory structure
02/17/2009US7491962 Resistance variable memory device with nanoparticle electrode and method of fabrication
02/17/2009US7491657 Method of manufacturing a semiconductor device having a one time programmable (OTP) erasable and programmable read only memory (EPROM) cell
02/17/2009US7491656 Semiconductor device, method for forming silicon oxide film, and apparatus for forming silicon oxide film
02/17/2009US7491655 Semiconductor device and method of fabricating the same
02/17/2009US7491627 III-nitride device and method with variable epitaxial growth direction
02/17/2009US7491617 Transistor structure with minimized parasitics and method of fabricating the same
02/17/2009US7491616 Method of manufacturing a semiconductor device including dopant introduction