| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/21/2009 | EP1394844B1 Method of fabricating semiconductor device |
| 01/21/2009 | EP1230672B1 Method for treating a surface of an sic semiconductor layer and forming a contact |
| 01/21/2009 | CN201185190Y Node terminal protection structure capable of improving semiconductor power device electrostatic protective performance |
| 01/21/2009 | CN101351893A Trench polysilicon diode |
| 01/21/2009 | CN101351892A Semiconductor device and method for manufacturing same |
| 01/21/2009 | CN101351891A Lighting device |
| 01/21/2009 | CN101351887A Fabrication of transistors |
| 01/21/2009 | CN101351872A Semiconductor device and process for producing the same |
| 01/21/2009 | CN101351712A Semiconductor sensor and method of producing sensor body for semiconductor sensor |
| 01/21/2009 | CN101350392A P type nitride semiconductor Ohm contact electrode with nano pattern and preparation method thereof |
| 01/21/2009 | CN101350379A Tricolor field emission fluorescent powder and production of display |
| 01/21/2009 | CN101350369A Bottom anode schottky diode structure and manufacture method |
| 01/21/2009 | CN101350368A Semiconductor memery device |
| 01/21/2009 | CN101350367A 液晶显示装置 The liquid crystal display device |
| 01/21/2009 | CN101350366A Antistatic TFT substrate and processing technique thereof |
| 01/21/2009 | CN101350365A Semiconductor device |
| 01/21/2009 | CN101350364A Method for preparing nano zinc oxide field-effect transistor |
| 01/21/2009 | CN101350363A Transistor structure and preparation method thereof |
| 01/21/2009 | CN101350354A Semiconductor device and method for producing the same |
| 01/21/2009 | CN101350353A Semiconductor device and its manufacturing method |
| 01/21/2009 | CN101350350A Aging device |
| 01/21/2009 | CN101350349A Semiconductor device and method for fabricating the same |
| 01/21/2009 | CN101350313A Method of manufacturing semiconductor active layer, method of manufacturing thin film transistor and thin film transistor |
| 01/21/2009 | CN101350310A Semiconductor device and method of fabricating the same |
| 01/21/2009 | CN101350309A Plane double diffusion metal oxide semiconductor device and preparation method |
| 01/21/2009 | CN101350308A Gold oxygen semiconductor field effect electric crystal and method for reducing damage in source/drain electrode area |
| 01/21/2009 | CN101350304A Method for manufacturing parasitic NPN transistor and structure thereof |
| 01/21/2009 | CN101350301A Semiconductor device and method for fabricating the same |
| 01/21/2009 | CN101350292A Method for forming elementary cell and crystal round with epitaxial slice |
| 01/21/2009 | CN101349844A Array substrate for liquid crystal display device and method of fabricating the same |
| 01/21/2009 | CN100454599C Spin-injection field effect transistor, magnetic ram, and reconfigurable logical circuit |
| 01/21/2009 | CN100454583C Semiconductor device |
| 01/21/2009 | CN100454582C Semiconductor device |
| 01/21/2009 | CN100454581C 有机薄膜晶体管 The organic thin film transistor |
| 01/21/2009 | CN100454580C Semiconductor device |
| 01/21/2009 | CN100454579C Self-driving LDMOS transistor |
| 01/21/2009 | CN100454578C High pressure metal oxide semiconductor element and its manufacturing method |
| 01/21/2009 | CN100454577C Insulated gate semiconductor device and manufacturing method of the same |
| 01/21/2009 | CN100454576C Semiconductor component and its manufacturing method and memory element and its operating method |
| 01/21/2009 | CN100454575C Semiconductor device and method for fabricating the same |
| 01/21/2009 | CN100454574C Mirror image non-volatile memory cell transistor pairs with single poly layer |
| 01/21/2009 | CN100454573C Semiconductor device |
| 01/21/2009 | CN100454564C Method for producing solid-state imaging device |
| 01/21/2009 | CN100454562C Thin-film transistor array substrates, manufacturing method and LCD device containing the same |
| 01/21/2009 | CN100454551C EEPROM component and its making method |
| 01/21/2009 | CN100454550C Capacitance structure |
| 01/21/2009 | CN100454549C Semiconductor capacitor structure and its making method |
| 01/21/2009 | CN100454548C Trough transistor (TR) grid capable of realizing large self aligning contact (SAL) split allowance and its shaping method |
| 01/21/2009 | CN100454546C Semiconductor device and manufacturing method thereof |
| 01/21/2009 | CN100454521C Semiconductor device and its fabricating method, soi substrate and its production method and display device |
| 01/21/2009 | CN100454520C Method for manufacturing film integrated circuit and element substrate |
| 01/21/2009 | CN100454499C Semiconductor device and method for manufacturing same |
| 01/21/2009 | CN100454455C Micro-electromechanical sensor |
| 01/21/2009 | CN100454124C Array architecture of thin film transistor of bottom grid electrode, and fabricating method |
| 01/21/2009 | CN100454121C Thin film transistor display making method |
| 01/21/2009 | CN100454120C Array substrate for in-plane switching mode liquid crystal display device and method of fabricating the same |
| 01/21/2009 | CN100454022C 加速度传感器 Acceleration sensor |
| 01/20/2009 | US7480604 Method of modeling and producing an integrated circuit including at least one transistor and corresponding integrated circuit |
| 01/20/2009 | US7480598 Characteristic evaluation apparatus for insulated gate type transistors |
| 01/20/2009 | US7480186 NROM flash memory with self-aligned structural charge separation |
| 01/20/2009 | US7480185 Ballistic injection NROM flash memory |
| 01/20/2009 | US7480025 Array substrate for a liquid crystal display device and manufacturing method of the same |
| 01/20/2009 | US7479939 Electro-optical device |
| 01/20/2009 | US7479694 Membrane 3D IC fabrication |
| 01/20/2009 | US7479688 STI stress modification by nitrogen plasma treatment for improving performance in small width devices |
| 01/20/2009 | US7479687 Deep via seed repair using electroless plating chemistry |
| 01/20/2009 | US7479686 Backside imaging through a doped layer |
| 01/20/2009 | US7479685 Electronic device on substrate with cavity and mitigated parasitic leakage path |
| 01/20/2009 | US7479684 Field effect transistor including damascene gate with an internal spacer structure |
| 01/20/2009 | US7479683 Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics |
| 01/20/2009 | US7479682 Structure of a field effect transistor having metallic silicide and manufacturing method thereof |
| 01/20/2009 | US7479679 Field effect transistor and application device thereof |
| 01/20/2009 | US7479678 Semiconductor element and method of manufacturing the same |
| 01/20/2009 | US7479677 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
| 01/20/2009 | US7479676 Transistor of semiconductor memory device |
| 01/20/2009 | US7479674 Field effect transistor |
| 01/20/2009 | US7479673 Semiconductor integrated circuits with stacked node contact structures |
| 01/20/2009 | US7479672 Power junction field effect power transistor with highly vertical channel and uniform channel opening |
| 01/20/2009 | US7479671 Thin film phase change memory cell formed on silicon-on-insulator substrate |
| 01/20/2009 | US7479669 Current aperture transistors and methods of fabricating same |
| 01/20/2009 | US7479668 Source/drain extension implant process for use with short time anneals |
| 01/20/2009 | US7479667 Semiconductor device with modified mobility and thin film transistor having the same |
| 01/20/2009 | US7479662 Coated LED with improved efficiency |
| 01/20/2009 | US7479657 Semiconductor device including active matrix circuit |
| 01/20/2009 | US7479656 Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metal |
| 01/20/2009 | US7479654 Memory arrays using nanotube articles with reprogrammable resistance |
| 01/20/2009 | US7479652 Qubit readout via controlled coherent tunnelling to probe state |
| 01/20/2009 | US7479651 Semiconductor device |
| 01/20/2009 | US7479451 Display device manufacturing method preventing diffusion of an aluminum element into a polysilicon layer in a heating step |
| 01/20/2009 | US7479448 Method of manufacturing a light emitting device with a doped active layer |
| 01/20/2009 | US7479447 Method of forming a crack stop void in a low-k dielectric layer between adjacent fuses |
| 01/20/2009 | US7479446 Semiconductor device and method of manufacturing same |
| 01/20/2009 | US7479435 Method of forming a circuit having subsurface conductors |
| 01/20/2009 | US7479430 Non-volatile semiconductor memory device |
| 01/20/2009 | US7479428 NROM flash memory with a high-permittivity gate dielectric |
| 01/20/2009 | US7479424 Method for fabricating an integrated circuit comprising a three-dimensional capacitor |
| 01/20/2009 | US7479423 Semiconductor device and manufacturing method of semiconductor device |
| 01/20/2009 | US7479415 Fabrication method of polycrystalline silicon liquid crystal display device |
| 01/20/2009 | US7479410 Hybrid-orientation technology buried n-well design |
| 01/20/2009 | US7479232 Method for producing a semiconductor component and a semiconductor component produced according to the method |