Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2009
01/21/2009EP1394844B1 Method of fabricating semiconductor device
01/21/2009EP1230672B1 Method for treating a surface of an sic semiconductor layer and forming a contact
01/21/2009CN201185190Y Node terminal protection structure capable of improving semiconductor power device electrostatic protective performance
01/21/2009CN101351893A Trench polysilicon diode
01/21/2009CN101351892A Semiconductor device and method for manufacturing same
01/21/2009CN101351891A Lighting device
01/21/2009CN101351887A Fabrication of transistors
01/21/2009CN101351872A Semiconductor device and process for producing the same
01/21/2009CN101351712A Semiconductor sensor and method of producing sensor body for semiconductor sensor
01/21/2009CN101350392A P type nitride semiconductor Ohm contact electrode with nano pattern and preparation method thereof
01/21/2009CN101350379A Tricolor field emission fluorescent powder and production of display
01/21/2009CN101350369A Bottom anode schottky diode structure and manufacture method
01/21/2009CN101350368A Semiconductor memery device
01/21/2009CN101350367A 液晶显示装置 The liquid crystal display device
01/21/2009CN101350366A Antistatic TFT substrate and processing technique thereof
01/21/2009CN101350365A Semiconductor device
01/21/2009CN101350364A Method for preparing nano zinc oxide field-effect transistor
01/21/2009CN101350363A Transistor structure and preparation method thereof
01/21/2009CN101350354A Semiconductor device and method for producing the same
01/21/2009CN101350353A Semiconductor device and its manufacturing method
01/21/2009CN101350350A Aging device
01/21/2009CN101350349A Semiconductor device and method for fabricating the same
01/21/2009CN101350313A Method of manufacturing semiconductor active layer, method of manufacturing thin film transistor and thin film transistor
01/21/2009CN101350310A Semiconductor device and method of fabricating the same
01/21/2009CN101350309A Plane double diffusion metal oxide semiconductor device and preparation method
01/21/2009CN101350308A Gold oxygen semiconductor field effect electric crystal and method for reducing damage in source/drain electrode area
01/21/2009CN101350304A Method for manufacturing parasitic NPN transistor and structure thereof
01/21/2009CN101350301A Semiconductor device and method for fabricating the same
01/21/2009CN101350292A Method for forming elementary cell and crystal round with epitaxial slice
01/21/2009CN101349844A Array substrate for liquid crystal display device and method of fabricating the same
01/21/2009CN100454599C Spin-injection field effect transistor, magnetic ram, and reconfigurable logical circuit
01/21/2009CN100454583C Semiconductor device
01/21/2009CN100454582C Semiconductor device
01/21/2009CN100454581C 有机薄膜晶体管 The organic thin film transistor
01/21/2009CN100454580C Semiconductor device
01/21/2009CN100454579C Self-driving LDMOS transistor
01/21/2009CN100454578C High pressure metal oxide semiconductor element and its manufacturing method
01/21/2009CN100454577C Insulated gate semiconductor device and manufacturing method of the same
01/21/2009CN100454576C Semiconductor component and its manufacturing method and memory element and its operating method
01/21/2009CN100454575C Semiconductor device and method for fabricating the same
01/21/2009CN100454574C Mirror image non-volatile memory cell transistor pairs with single poly layer
01/21/2009CN100454573C Semiconductor device
01/21/2009CN100454564C Method for producing solid-state imaging device
01/21/2009CN100454562C Thin-film transistor array substrates, manufacturing method and LCD device containing the same
01/21/2009CN100454551C EEPROM component and its making method
01/21/2009CN100454550C Capacitance structure
01/21/2009CN100454549C Semiconductor capacitor structure and its making method
01/21/2009CN100454548C Trough transistor (TR) grid capable of realizing large self aligning contact (SAL) split allowance and its shaping method
01/21/2009CN100454546C Semiconductor device and manufacturing method thereof
01/21/2009CN100454521C Semiconductor device and its fabricating method, soi substrate and its production method and display device
01/21/2009CN100454520C Method for manufacturing film integrated circuit and element substrate
01/21/2009CN100454499C Semiconductor device and method for manufacturing same
01/21/2009CN100454455C Micro-electromechanical sensor
01/21/2009CN100454124C Array architecture of thin film transistor of bottom grid electrode, and fabricating method
01/21/2009CN100454121C Thin film transistor display making method
01/21/2009CN100454120C Array substrate for in-plane switching mode liquid crystal display device and method of fabricating the same
01/21/2009CN100454022C 加速度传感器 Acceleration sensor
01/20/2009US7480604 Method of modeling and producing an integrated circuit including at least one transistor and corresponding integrated circuit
01/20/2009US7480598 Characteristic evaluation apparatus for insulated gate type transistors
01/20/2009US7480186 NROM flash memory with self-aligned structural charge separation
01/20/2009US7480185 Ballistic injection NROM flash memory
01/20/2009US7480025 Array substrate for a liquid crystal display device and manufacturing method of the same
01/20/2009US7479939 Electro-optical device
01/20/2009US7479694 Membrane 3D IC fabrication
01/20/2009US7479688 STI stress modification by nitrogen plasma treatment for improving performance in small width devices
01/20/2009US7479687 Deep via seed repair using electroless plating chemistry
01/20/2009US7479686 Backside imaging through a doped layer
01/20/2009US7479685 Electronic device on substrate with cavity and mitigated parasitic leakage path
01/20/2009US7479684 Field effect transistor including damascene gate with an internal spacer structure
01/20/2009US7479683 Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics
01/20/2009US7479682 Structure of a field effect transistor having metallic silicide and manufacturing method thereof
01/20/2009US7479679 Field effect transistor and application device thereof
01/20/2009US7479678 Semiconductor element and method of manufacturing the same
01/20/2009US7479677 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
01/20/2009US7479676 Transistor of semiconductor memory device
01/20/2009US7479674 Field effect transistor
01/20/2009US7479673 Semiconductor integrated circuits with stacked node contact structures
01/20/2009US7479672 Power junction field effect power transistor with highly vertical channel and uniform channel opening
01/20/2009US7479671 Thin film phase change memory cell formed on silicon-on-insulator substrate
01/20/2009US7479669 Current aperture transistors and methods of fabricating same
01/20/2009US7479668 Source/drain extension implant process for use with short time anneals
01/20/2009US7479667 Semiconductor device with modified mobility and thin film transistor having the same
01/20/2009US7479662 Coated LED with improved efficiency
01/20/2009US7479657 Semiconductor device including active matrix circuit
01/20/2009US7479656 Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metal
01/20/2009US7479654 Memory arrays using nanotube articles with reprogrammable resistance
01/20/2009US7479652 Qubit readout via controlled coherent tunnelling to probe state
01/20/2009US7479651 Semiconductor device
01/20/2009US7479451 Display device manufacturing method preventing diffusion of an aluminum element into a polysilicon layer in a heating step
01/20/2009US7479448 Method of manufacturing a light emitting device with a doped active layer
01/20/2009US7479447 Method of forming a crack stop void in a low-k dielectric layer between adjacent fuses
01/20/2009US7479446 Semiconductor device and method of manufacturing same
01/20/2009US7479435 Method of forming a circuit having subsurface conductors
01/20/2009US7479430 Non-volatile semiconductor memory device
01/20/2009US7479428 NROM flash memory with a high-permittivity gate dielectric
01/20/2009US7479424 Method for fabricating an integrated circuit comprising a three-dimensional capacitor
01/20/2009US7479423 Semiconductor device and manufacturing method of semiconductor device
01/20/2009US7479415 Fabrication method of polycrystalline silicon liquid crystal display device
01/20/2009US7479410 Hybrid-orientation technology buried n-well design
01/20/2009US7479232 Method for producing a semiconductor component and a semiconductor component produced according to the method