Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2009
01/06/2009US7473925 P-type group II-VI semiconductor compounds
01/06/2009US7473923 Organic semiconductor element
01/06/2009US7473922 Infrared detector
01/06/2009US7473651 Method of manufacturing carbon nanotube semiconductor device
01/06/2009US7473640 Reactive gate electrode conductive barrier
01/06/2009US7473628 Method of manufacturing semiconductor device and semiconductor device
01/06/2009US7473611 Methods of forming non-volatile memory cells including fin structures
01/06/2009US7473604 Low temperature process and structures for polycide power MOSFET with ultra-shallow source
01/06/2009US7473601 Method of fabricating flash memory device using sidewall process
01/06/2009US7473596 Methods of forming memory cells
01/06/2009US7473592 Method of fabricating a semiconductor device
01/06/2009US7473591 Transistor with strain-inducing structure in channel
01/06/2009US7473573 Thin film transistor array panel and method for fabricating the same
01/06/2009CA2366999C Integrated sensor packaging and multi-axis sensor assembly packaging
01/02/2009DE19856331B4 Verfahren zur Eingehäusung elektronischer Bauelemente Method for Eingehäusung electronic components
01/02/2009DE112006002946T5 Halbleiter-Druckmesser und Verfahren zu seiner Herstellung A semiconductor pressure gauge and process for its preparation
01/02/2009DE112004002641B4 Verfahren zur Herstellung eines verformten FinFET-Kanals A process for producing a strained FinFET channel
01/02/2009DE102008023471A1 Halbleiterbauelement Semiconductor device
01/02/2009DE102008023316A1 Halbleitereinrichtung Semiconductor device
01/02/2009DE102008005872A1 Halbleitervorrichtung und Herstellungsverfahren dafür A semiconductor device and manufacturing method thereof
01/02/2009DE102008002647A1 Rauschreduktion in einem Halbleiterbauelement unter Verwendung von Gegendotierung Noise reduction in a semiconductor device using counter-doping
01/02/2009DE102008001943A1 Halbleiterbauelemente und Verfahren zu deren Herstellung Semiconductor devices and processes for their preparation
01/02/2009DE102008001531A1 Doppelgate-FinFET Double-gate FinFET
01/02/2009DE102007030054A1 Transistor mit reduziertem Gatewiderstand und verbesserter Verspannungsübertragungseffizienz und Verfahren zur Herstellung desselben Of the same transistor with reduced gate resistance and improved stress transfer efficiency and methods for preparing
01/02/2009DE102007030053A1 Reduzieren der pn-Übergangskapazität in einem Transistor durch Absenken von Drain- und Source-Gebieten Reduce the pn junction capacitance of a transistor by lowering of drain and source regions
01/02/2009DE102007030021A1 Verfahren zum Ausbilden einer Halbleiterstruktur mit einem Feldeffekttransistor, der ein verspanntes Kanalgebiet aufweist A method of forming a semiconductor structure with a field effect transistor having a stressed channel region
01/02/2009DE102007009727B4 Verfahren zum Herstellen eines Halbleiterbauelements und Transistor-Halbleiterbauelement A method of manufacturing a semiconductor device and transistor-semiconductor component
01/02/2009DE102007009227B4 Halbleiterbauelement mit gleichrichtenden Übergängen sowie Herstellungsverfahren zur Herstellung desselben Of the same semiconductor device with rectifying junctions, as well as manufacturing method for manufacturing
01/01/2009US20090006174 Method and system to connect consumers to information
01/01/2009US20090004881 Hybrid high-k gate dielectric film
01/01/2009US20090004872 Method of manufacturing a semiconductor device
01/01/2009US20090004794 Use of dilute steam ambient for improvement of flash devices
01/01/2009US20090004788 Thin film transistors and fabrication methods
01/01/2009US20090004787 Thin film transistor array panel for liquid crystal display
01/01/2009US20090004764 Method for manufacturing SOI substrate and method for manufacturing semiconductor device
01/01/2009US20090004504 Circuit system with circuit element and reference plane
01/01/2009US20090003074 Scalable Electrically Eraseable And Programmable Memory (EEPROM) Cell Array
01/01/2009US20090003070 Semiconductor memory device
01/01/2009US20090003065 Flash cell with improved program disturb
01/01/2009US20090003042 Magnetic memory device using domain structure and multi-state of ferromagnetic material
01/01/2009US20090003039 Electromechanical Memory, Electric Circuit Using the Same, and Method of Driving Electromechanical Memory
01/01/2009US20090003028 Carbon nanotube fuse element
01/01/2009US20090002590 Semiconductor device
01/01/2009US20090002587 Thin film transistor array panel and a manufacturing method thereof
01/01/2009US20090002025 Memory utilizing oxide nanolaminates
01/01/2009US20090001527 Series-shunt switch with thermal terminal
01/01/2009US20090001523 Systems and Methods for Processing a Film, and Thin Films
01/01/2009US20090001522 Die seal ring and wafer having the same
01/01/2009US20090001519 Growth of planar, non-polar, group-iii nitride films
01/01/2009US20090001518 Varactor
01/01/2009US20090001516 Semiconductor device and method of fabricating the same
01/01/2009US20090001514 Metal insulator metal capacitor and method of manufacturing the same
01/01/2009US20090001513 Semiconductor structure
01/01/2009US20090001512 Providing a moat capacitance
01/01/2009US20090001511 High performance system-on-chip using post passivation process
01/01/2009US20090001510 Air gap in integrated circuit inductor fabrication
01/01/2009US20090001502 Semiconductor Devices and Methods of Manufacture Thereof
01/01/2009US20090001501 Fiber Soi Substrate, Semiconductor Device Using Same and Method for Manufacturing Same
01/01/2009US20090001500 Method and structure for implanting bonded substrates for electrical conductivity
01/01/2009US20090001487 Packaged device and method of manufacturing the same
01/01/2009US20090001486 Forming a cantilever assembly for verticle and lateral movement
01/01/2009US20090001485 Semiconductor Device and Manufacturing Method Thereof
01/01/2009US20090001484 Reducing transistor junction capacitance by recessing drain and source regions
01/01/2009US20090001483 Method for Forming a Nickelsilicide FUSI Gate
01/01/2009US20090001480 HIGH-k/METAL GATE MOSFET WITH REDUCED PARASITIC CAPACITANCE
01/01/2009US20090001477 Hybrid Fully-Silicided (FUSI)/Partially-Silicided (PASI) Structures
01/01/2009US20090001475 Semiconductor Device and Method of Fabricating the Same
01/01/2009US20090001474 Semiconductor device with reduced fringe capacitance
01/01/2009US20090001471 Semiconductor Device
01/01/2009US20090001470 Method for forming acute-angle spacer for non-orthogonal finfet and the resulting structure
01/01/2009US20090001468 Method of fabricating transistor including buried insulating layer and transistor fabricated using the same
01/01/2009US20090001467 Semiconductor device, method for manufacturing semiconductor device, and electronic appliance
01/01/2009US20090001464 Finfet with top body contact
01/01/2009US20090001463 Finfet field effect transistor insultated from the substrate
01/01/2009US20090001462 Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
01/01/2009US20090001461 Lateral dmos device and method for fabricating the same
01/01/2009US20090001460 Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding device
01/01/2009US20090001459 High power semiconductor device capable of preventing parasitical bipolar transistor from turning on
01/01/2009US20090001458 Semiconductor device with substantial driving current and decreased junction leakage current
01/01/2009US20090001457 Semiconductor structure
01/01/2009US20090001456 Semiconductor device and method of fabricating the same
01/01/2009US20090001454 Semiconductor device and transistor
01/01/2009US20090001453 Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region
01/01/2009US20090001451 Non-volatile memory device and method of fabricating the same
01/01/2009US20090001450 Non-volatile memory device and method of fabricating the same
01/01/2009US20090001449 Semiconductor device and a method of manufacturing the same
01/01/2009US20090001448 Semiconductor memory device and method of manufacturing the same
01/01/2009US20090001447 Semiconductor device with dummy electrode
01/01/2009US20090001446 Flash memory device and methods for fabricating the same
01/01/2009US20090001445 Non-Volatile Memory Device and Method of Fabricating the Same
01/01/2009US20090001444 Semiconductor device and manufacturing method thereof
01/01/2009US20090001443 Non-volatile memory cell with multi-layer blocking dielectric
01/01/2009US20090001442 Nonvolatile semiconductor memory device and method of manufacturing the same
01/01/2009US20090001441 Three dimensional quantum dot array
01/01/2009US20090001440 Semiconductor device with buried source rail
01/01/2009US20090001439 Flash Memory Device and Method of Manufacturing the Same
01/01/2009US20090001438 Isolation of MIM FIN DRAM capacitor
01/01/2009US20090001436 Memory device
01/01/2009US20090001432 Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same
01/01/2009US20090001431 Method for forming semiconductor contacts