| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/24/2009 | US7494851 Thin film transistor array substrate and method for manufacturing the same |
| 02/24/2009 | US7494850 Ultra-thin logic and backgated ultra-thin SRAM |
| 02/24/2009 | US7494848 Flip-chip packaging of a photo-sensor die on a transparent substrate |
| 02/24/2009 | US7494839 Method for manufacturing a membrane sensor |
| 02/24/2009 | US7494834 Method of manufacturing a transparent element including transparent electrodes |
| 02/24/2009 | US7494831 Process for making stacks of islands made of one semiconducting material encapsulated in another semiconducting material |
| 02/24/2009 | US7494695 forming a first pattern having a predetermined shape in a first printing roll, rotating the printing roll on a substrate to transfer the first pattern, forming a second pattern having a predetermined shape in a second printing roll, and rotating the second printing roll on the substrate |
| 02/19/2009 | WO2009023502A1 Vertical junction field effect transistor with mesa termination and method of making the same |
| 02/19/2009 | WO2009023148A2 Nanowire electronic devices and method for producing the same |
| 02/19/2009 | WO2009023081A1 Mos transistors for thin soi integration and methods for fabricating the same |
| 02/19/2009 | WO2009022741A1 Nonvolatile semiconductor memory device |
| 02/19/2009 | WO2009022677A1 Semiconductor device |
| 02/19/2009 | WO2009022592A1 Soft recovery diode |
| 02/19/2009 | WO2009022578A1 Device structure and method for manufacturing the same |
| 02/19/2009 | WO2009022573A1 Method for thin film formation |
| 02/19/2009 | WO2009022509A1 Mos transistor and semiconductor integrated circuit device using the same |
| 02/19/2009 | WO2008152026A3 Vertical current controlled silicon on insulator (soi) device and method of forming same |
| 02/19/2009 | WO2006031981A3 Nanotube transistor and rectifying devices |
| 02/19/2009 | WO2006001942A3 Electronic isolation device |
| 02/19/2009 | US20090047799 Gate oxide leakage reduction |
| 02/19/2009 | US20090047776 Method of Forming a Thin Film Transistor |
| 02/19/2009 | US20090047770 Method of forming isolation regions for integrated circuits |
| 02/19/2009 | US20090047750 Thin film transistor array substrate and fabrication method thereof |
| 02/19/2009 | US20090046502 Metal Magnetic Memory Cell |
| 02/19/2009 | US20090045522 Semiconductor device having via connecting between interconnects |
| 02/19/2009 | US20090045486 Method of manufacturing nitride semiconductor device |
| 02/19/2009 | US20090045484 Methods and systems involving electrically reprogrammable fuses |
| 02/19/2009 | US20090045482 Shallow Trench Isolation with Improved Structure and Method of Forming |
| 02/19/2009 | US20090045475 Double sided integrated processing and sensing chip |
| 02/19/2009 | US20090045473 Devices having horizontally-disposed nanofabric articles and methods of making the same |
| 02/19/2009 | US20090045472 Methodology for Reducing Post Burn-In Vmin Drift |
| 02/19/2009 | US20090045470 Semiconductor device and manufacturing method of the same |
| 02/19/2009 | US20090045467 Bipolar transistor finfet technology |
| 02/19/2009 | US20090045466 Semiconductor device |
| 02/19/2009 | US20090045465 Semiconductor device and method for fabricating the same |
| 02/19/2009 | US20090045460 mosfet for high voltage applications and a method of fabricating same |
| 02/19/2009 | US20090045459 Semiconductor device and method of manufacturing semiconductor device |
| 02/19/2009 | US20090045458 Mos transistors for thin soi integration and methods for fabricating the same |
| 02/19/2009 | US20090045457 Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS) |
| 02/19/2009 | US20090045456 Semiconductor device and method of fabricating the same |
| 02/19/2009 | US20090045455 Nonvolatile memory device and method of fabricating the same |
| 02/19/2009 | US20090045454 Semiconductor non-volatile memory cell, method of producing the same, semiconductor non-volatile memory having the semiconductor non-volatile memory cell, and method of producing the same |
| 02/19/2009 | US20090045453 Nonvolatile memory devices including gate conductive layers having perovskite structure and methods of fabricating the same |
| 02/19/2009 | US20090045450 Non-volatile memory device and method of fabricating the same |
| 02/19/2009 | US20090045449 Finned memory cells |
| 02/19/2009 | US20090045448 Non-volatile memory device and methods of forming the same |
| 02/19/2009 | US20090045447 Complex oxide nanodots |
| 02/19/2009 | US20090045446 Power semiconductor device |
| 02/19/2009 | US20090045440 Method of forming an mos transistor and structure therefor |
| 02/19/2009 | US20090045439 Heterojunction field effect transistor and manufacturing method thereof |
| 02/19/2009 | US20090045438 Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor |
| 02/19/2009 | US20090045436 Localized trigger esd protection device |
| 02/19/2009 | US20090045429 Diode structure and memory device including the same |
| 02/19/2009 | US20090045414 Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device |
| 02/19/2009 | US20090045413 Silicon Carbide Bipolar Semiconductor Device |
| 02/19/2009 | US20090045412 Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate |
| 02/19/2009 | US20090045411 Forming Embedded Dielectric Layers Adjacent to Sidewalls of Shallow Trench Isolation Regions |
| 02/19/2009 | US20090045410 GaN SUBSTRATE AND SEMICONDUCTOR DEVICE PREPARED BY USING METHOD AND APPARATUS OF POLISHING GaN SUBSTRATE |
| 02/19/2009 | US20090045409 Display device |
| 02/19/2009 | US20090045408 Display device |
| 02/19/2009 | US20090045406 Semiconductor device and display device |
| 02/19/2009 | US20090045404 Semiconductor device and display device |
| 02/19/2009 | US20090045403 Contact structure and semiconductor device |
| 02/19/2009 | US20090045402 TFT array substrate and manufacturing method the same |
| 02/19/2009 | US20090045401 Semiconductor device and manufacturing method thereof |
| 02/19/2009 | US20090045399 Field effect transistor with gate insulation layer formed by using amorphous oxide film |
| 02/19/2009 | US20090045398 MANUFACTURE METHOD FOR ZnO BASED COMPOUND SEMICONDUCTOR CRYSTAL AND ZnO BASED COMPOUND SEMICONDUCTOR SUBSTRATE |
| 02/19/2009 | US20090045397 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film |
| 02/19/2009 | US20090045391 Switch Device and Method of Fabricating the Same |
| 02/19/2009 | DE102007038917A1 Single-layer semiconductor or multi-layer semiconductor, has three-value PNP or NPN layers and are designed in form of negative temperature coefficient thermistor and positive temperature coefficient thermistor |
| 02/19/2009 | DE102007037858A1 Halbleiterbauelement mit verbessertem dynamischen Verhalten A semiconductor device having an improved dynamic behavior |
| 02/19/2009 | DE102007030755B3 Halbleiterbauelement mit einem einen Graben aufweisenden Randabschluss und Verfahren zur Herstellung eines Randabschlusses A semiconductor device having a trench having a peripheral termination and method for producing a junction termination |
| 02/19/2009 | DE102006025218B4 Leistungshalbleiterbauelement mit Ladungskompensationsstruktur und Verfahren zur Herstellung desselben Power semiconductor component thereof having charge compensation structure and method for producing |
| 02/19/2009 | CA2733710A1 Vertical junction field effect transistor with mesa termination and method of making the same |
| 02/18/2009 | EP2026384A2 Charge trapping memory cell with high speed erase |
| 02/18/2009 | EP2026378A2 Non-volatile FinFET memory device and method of fabricating the same |
| 02/18/2009 | EP2026077A1 Acceleration sensor |
| 02/18/2009 | EP2025004A1 Semiconductor device including an oxide semiconductor thin film layer of zinc oxide and manufacturing method thereof |
| 02/18/2009 | EP2025003A2 Multi-post structures |
| 02/18/2009 | EP1476894A4 High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon |
| 02/18/2009 | EP1335878B1 Microstructure component |
| 02/18/2009 | EP1019968B1 Method for manufacturing a diode device having a low threshold voltage |
| 02/18/2009 | CN101371364A Sensor for detecting organic liquids |
| 02/18/2009 | CN101371363A Semiconductor device including a front side strained superlattice layer and a back side stress layer and associated methods |
| 02/18/2009 | CN101371362A Edge termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same |
| 02/18/2009 | CN101371345A Semiconductor device for high frequency |
| 02/18/2009 | CN101371344A 场效应晶体管 FET |
| 02/18/2009 | CN101371337A Trench schottky barrier diode with differential oxide thickness |
| 02/18/2009 | CN101371335A Method for producing semiconductor chip, and field effect transistor and method for manufacturing same |
| 02/18/2009 | CN101370972A Method for manufacturing aluminum nitride crystal, aluminum nitride crystal, aluminum nitride crystal substrate and semiconductor device |
| 02/18/2009 | CN101369607A Flash memory unit structure and preparation thereof |
| 02/18/2009 | CN101369606A Thin-film transistor panel having structure that suppresses characteristic shifts and method for manufacturing the same |
| 02/18/2009 | CN101369605A Display device |
| 02/18/2009 | CN101369604A Semiconductor device and manufacturing method thereof |
| 02/18/2009 | CN101369603A 电介质隔离型半导体装置 Dielectric isolation type semiconductor device |
| 02/18/2009 | CN101369602A Dielectric isolation type semiconductor device and manufacturing method therefor |
| 02/18/2009 | CN101369601A Heterostructure field effect transistor and manufature method thereof |
| 02/18/2009 | CN101369600A P type silicon carbide device and preparation thereof |
| 02/18/2009 | CN101369599A Ohm contact of gallium nitride base device and preparation method thereof |
| 02/18/2009 | CN101369598A Semiconductor structure |