Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2009
01/15/2009DE102008011799A1 Halbleitervorrichtung Semiconductor device
01/15/2009DE102008008152A1 Leistungshalbleitervorrichtung und Herstellungsverfahren derselben Power semiconductor device and manufacturing method thereof
01/15/2009DE102007042950A1 Integrierte Schaltungsvorrichtung mit einer Gateelektrodenstruktur und ein entsprechendes Verfahren zur Herstellung An integrated circuit device having a gate electrode structure and a corresponding method for the preparation of
01/15/2009DE102006056809B9 Anschlussstruktur für ein elektronisches Bauelement Terminal structure for an electronic component
01/15/2009DE102006052192B4 Schichtenverbund mit nicht durchgängigen Öffnungen, Verfahren zur Herstellung und Bauelement damit Composite layers so with non-conducting apertures, methods of making and component
01/14/2009EP2015364A2 SiC semiconductor device with BPSG insulation film and method for manufacturing the same
01/14/2009EP2015363A1 Semiconductor device and process for producing the same
01/14/2009EP2015362A1 Semiconductor array and manufacturing method thereof
01/14/2009EP2015358A2 Non-volatile SRAM memory cell with mobile-gate transistors and piezoelectric activation
01/14/2009EP2015353A1 Semiconductor device and method for manufacturing semiconductor device
01/14/2009EP2015350A1 Semiconductor component with buffer layer
01/14/2009EP2015348A2 Method for manufacturing a SiC semiconductor device
01/14/2009EP2015310A2 Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance
01/14/2009EP2014611A2 Suspended-gate MOS transistor with non-volatile operation by piezoelectric activation
01/14/2009EP2013911A2 Semiconductor device with surge current protection and method of making the same
01/14/2009EP2013910A2 Method of forming a body-tie
01/14/2009EP2013909A2 Optical devices for controlled color mixing
01/14/2009EP2013904A2 Body-tied mosfet device with strained active area
01/14/2009EP2013902A1 Method of producing a transistor gate comprising decomposition of a precursor material into at least one metallic material, by means of at least one electron beam
01/14/2009EP2013900A1 Non-volatile memory device
01/14/2009EP2013661A2 Mask structure for manufacture of trench type semiconductor device
01/14/2009EP1856725A4 Self-forming metal silicide gate for cmos devices
01/14/2009EP1186002A4 Ic-compatible parylene mems technology and its application in integrated sensors
01/14/2009EP1138085B1 Field effect-controlled transistor and method for producing the same
01/14/2009EP1008169B1 Producing microstructures or nanostructures on a support
01/14/2009CN201181707Y Structure for improving gate electrode metal layer adhesiveness of groove power MOS device
01/14/2009CN101346829A The fabricating method of single electron transistor (set) by employing nano-lithographical technology in the semiconductor process
01/14/2009CN101346821A All-inkjet printed thin film transistor
01/14/2009CN101346820A 半导体器件 Semiconductor devices
01/14/2009CN101346819A Semiconductor device with field plate and method
01/14/2009CN101346811A Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers
01/14/2009CN101346810A Process for producing semiconductor device and semiconductor device
01/14/2009CN101346801A EPROM cell with double-layer floating gate
01/14/2009CN101346751A Active matrix substrate, display device, television receiver, and method for repairing defects of active matrix substrate
01/14/2009CN101346306A Controlled preparation of nanoparticle materials
01/14/2009CN101345262A Semiconductor structure and process for reducing the second bit effect of a memory device
01/14/2009CN101345261A Thin film transistor and manufacturing method of the same
01/14/2009CN101345260A Semiconductor structure
01/14/2009CN101345259A Vertical MOS transistor and method therefor
01/14/2009CN101345258A High voltage metal-oxide-semiconductor transistor and manufacturing method thereof
01/14/2009CN101345257A Asymmetric metal-oxide-semiconductor transistor and production method and element using the same
01/14/2009CN101345256A Perpendicular field-effect transistor and preparation method thereof
01/14/2009CN101345255A Power semiconductor device and manufacturing method therefor
01/14/2009CN101345254A Semiconductor device
01/14/2009CN101345246A Active-matrix-drive display unit including TFT
01/14/2009CN101345219A Method of fabricating semiconductor device
01/14/2009CN101345218A Method for manufacturing thin film transistors
01/14/2009CN101345197A Forming method of contact hole, and manufacturing method of semicondutor device, liquid crystal display device and el display device
01/14/2009CN101344694A Liquid crystal display device
01/14/2009CN101344658A Liquid crystal display
01/14/2009CN101344534A 加速度传感器 Acceleration sensor
01/14/2009CN100452933C Low temp polycrystal silicone film transistor display panel and manufacturing method thereof
01/14/2009CN100452472C Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers
01/14/2009CN100452449C Nitride semiconductors on silicon substrate and method of manufacturing the same
01/14/2009CN100452442C Method for production of a semiconductor device with auto-aligned metallisations
01/14/2009CN100452440C Nonvolatile semiconductor memory device and method of manufacturing the same
01/14/2009CN100452439C Transistor of semiconductor device and method of manufacturing the same
01/14/2009CN100452438C Floating gate transistors
01/14/2009CN100452437C Low-power multiple-channel fully depleted quantum well CMOSFETS
01/14/2009CN100452436C Transistor manufacturing method, electro-optic device and electronic instrument
01/14/2009CN100452435C Planar ultra-thin semiconductor-on-insulator channel mosfet and manufacturing method thereof
01/14/2009CN100452434C Field effect transistor and making method thereof
01/14/2009CN100452433C Semiconductor device and high voltage p-type metal oxide semiconductor (HVPMOS) device
01/14/2009CN100452432C Structure and method for manufacturing strained finfet
01/14/2009CN100452431C Mosfet device with localized stressor
01/14/2009CN100452430C Semiconductor device and its manufacturing method
01/14/2009CN100452429C High switch speed power device and its manufacturing method
01/14/2009CN100452428C Trench gate field effect devices
01/14/2009CN100452427C Compact non-linear HBT array
01/14/2009CN100452426C Semiconductor device and its manufacturing method
01/14/2009CN100452425C Atomic device
01/14/2009CN100452424C Optical device for LED-based light-bulb substitute
01/14/2009CN100452423C Semiconductor device
01/14/2009CN100452422C Reliable semiconductor structure and method for fabricating
01/14/2009CN100452413C Semiconductor device, a manufacturing method thereof, and a camera
01/14/2009CN100452400C Manufacturable recessed strained rsd structure and process for advanced cmos
01/14/2009CN100452392C Electrostatic discharge protection element and electronic device with thick diaphragm polysilicon and producing method thereof
01/14/2009CN100452359C Semiconductor device and method for manufacturing the same
01/14/2009CN100452357C Semiconductor device and manufacturing method thereof
01/14/2009CN100452356C Nonvolatile memory unit, manufacturing method, and opertion method
01/14/2009CN100452355C Nonvolatile memory, and manufacturing method
01/14/2009CN100452349C Computer implemented method for designing a semiconductor device, an automated design system and a semiconductor device
01/14/2009CN100452348C Method for manufacturing microelectronic circuit component and integrated circuit component
01/14/2009CN100452322C Silion carbide substrate gallium nitride high electronic transport ratio transistor and producing method
01/14/2009CN100452321C Creating increased mobility in a bipolar device and bipolar device
01/14/2009CN100452304C Method for producing film transistor and lower substrate for LCD
01/14/2009CN100452303C Metal alloy system suitable for ohmic contacting of high speed gallium-arsenide base device
01/14/2009CN100452302C Method and structure to use an etch resistant liner on transistor gate structure
01/14/2009CN100452301C Semiconductor device and producing method thereof
01/14/2009CN100452300C Dry isotropic removal of inorganic anti-reflective coating after poly gate etching
01/14/2009CN100452163C Electro-optical device, method for making the same, and electronic apparatus
01/14/2009CN100452116C Electro-optical device and electronic apparatus
01/14/2009CN100451797C Display device and manufacturing method of the same
01/14/2009CN100451796C Thin film transistor structure
01/14/2009CN100451792C Storage cell, pixel structure and manufacturing method of storage cell
01/14/2009CN100451791C Active matrix display and method of manufacturing the same
01/14/2009CN100451790C Liquid crystal display and method thereof
01/14/2009CN100451788C Electro-optical device, wiring board, and electronic apparatus
01/14/2009CN100451787C Thin-film semiconductor device, electro-optical device, and electronic apparatus
01/14/2009CN100451785C TFT array substrate, method for manufacturing the same, and liquid crystal display having the same