Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2009
12/10/2009US20090302432 Silicon epitaxial wafer and the production method thereof
12/10/2009US20090302431 Method of accessing semiconductor circuits from the backside using ion-beam and gas-etch
12/10/2009US20090302426 Method for the Selective Deposition of Germanium Nanofilm on a Silicon Substrate and Semiconductor Devices Made Therefrom
12/10/2009US20090302425 Carbon ribbon to be covered with a thin layer made of semiconductor material and method for depositing a layer of this type
12/10/2009US20090302424 Method of forming a bi-directional diode and structure therefor
12/10/2009US20090302423 ESD protection circuit and semiconductor device
12/10/2009US20090302422 Capacitor-cell, integrated circuit, and designing and manufacturing methods
12/10/2009US20090302421 Method and apparatus for creating a deep trench capacitor to improve device performance
12/10/2009US20090302420 Semiconductor device
12/10/2009US20090302415 Micro-Electromechanical System Devices
12/10/2009US20090302414 Trench isolation for reduced cross talk
12/10/2009US20090302413 Semiconductor device and sti forming method therefor
12/10/2009US20090302412 Carrier mobility enhanced channel devices and method of manufacture
12/10/2009US20090302405 Method for forming slot via bitline for mram devices
12/10/2009US20090302404 Semiconductor device and manufacturing method therefor
12/10/2009US20090302403 Spin torque transfer magnetic memory cell
12/10/2009US20090302402 Mugfet with stub source and drain regions
12/10/2009US20090302401 Pfet enhancement during smt
12/10/2009US20090302400 Metal high dielectric constant transistor with reverse-t gate
12/10/2009US20090302399 Using Metal/Metal Nitride Bilayers as Gate Electrodes in Self-Aligned Aggressively Scaled CMOS Devices
12/10/2009US20090302398 Methods of forming replacement metal gate structures with recessed channel
12/10/2009US20090302397 Field-Effect Transistor
12/10/2009US20090302396 Structure and Method to Fabricate Metal Gate High-K Devices
12/10/2009US20090302393 Low resistance integrated mos structure
12/10/2009US20090302386 Soi transistor having a carrier recombination structure in a body
12/10/2009US20090302385 High performance ldmos device having enhanced dielectric strain layer
12/10/2009US20090302384 Semiconductor device and method for producing semiconductor device
12/10/2009US20090302383 High-Voltage Transistor and Component Containing the Latter
12/10/2009US20090302382 Power Ic Device and Method of Manufacturing Same
12/10/2009US20090302381 Structure and Method for Forming Power Devices with Carbon-containing Region
12/10/2009US20090302379 Semiconductor Device
12/10/2009US20090302378 Method and system for vertical dmos with slots
12/10/2009US20090302377 Vertical-type semiconductor device
12/10/2009US20090302376 Semiconductor device
12/10/2009US20090302375 Method of manufacturing a semiconductor device and device manufactured by the method
12/10/2009US20090302373 Semiconductor device
12/10/2009US20090302372 Fin Field Effect Transistor Devices with Self-Aligned Source and Drain Regions
12/10/2009US20090302371 Conductive nanoparticles
12/10/2009US20090302370 Method and apparatus for flatband voltage tuning of high-k field effect transistors
12/10/2009US20090302369 Method and apparatus for flatband voltage tuning of high-k field effect transistors
12/10/2009US20090302368 Semiconductor device and method for manufacturing the same
12/10/2009US20090302367 Method of fabricating semiconductor device and semiconductor device fabricated by the method
12/10/2009US20090302365 Nanocrystal Based Universal Memory Cells, And Memory Cells
12/10/2009US20090302357 Amplifiers using gated diodes
12/10/2009US20090302356 Semiconductor device preventing floating body effect in a peripheral region thereof and method for manufacturing the same
12/10/2009US20090302355 Structure, structure and method for fabrication jfet in cmos
12/10/2009US20090302353 Structures containing electrodeposited germanium and methods for their fabrication
12/10/2009US20090302352 P-N Junction for Use as an RF Mixer from GHZ to THZ Frequencies
12/10/2009US20090302351 Bipolar transistor and manufacturing method of the same
12/10/2009US20090302350 Tensile Strained NMOS Transistor Using Group III-N Source/Drain Regions
12/10/2009US20090302349 Strained germanium field effect transistor and method of fabricating the same
12/10/2009US20090302348 Stress enhanced transistor devices and methods of making
12/10/2009US20090302347 Semiconductor integrated circuit
12/10/2009US20090302346 Mos type semiconductor device
12/10/2009US20090302339 Light Emitting Device, Semiconductor Device, and Method of Fabricating the Devices
12/10/2009US20090302336 Semiconductor wafers and semiconductor devices and methods of making semiconductor wafers and devices
12/10/2009US20090302334 Light-emitting element array
12/10/2009US20090302332 Semiconductor circuit having capacitor and thin film transistor, flat panel display including the semiconductor circuit, and method of manufacturing the semiconductor circuit
12/10/2009US20090302328 Silicon carbide semiconductor substrate and method of manufacturing the same
12/10/2009US20090302327 Rugged semiconductor device architecture
12/10/2009US20090302326 Silicon carbide single crystal wafer and producing method thereof
12/10/2009US20090302325 Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same
12/10/2009US20090302324 Thin film transistor panel
12/10/2009US20090302322 Method of Forming a Thin Film Transistor
12/10/2009US20090302321 Thin Film Transistor Substrate and Method of Manufacturing the Same
12/10/2009US20090302320 Display Device
12/10/2009US20090302318 Method for fabricating a pixel structure and the pixel structure
12/10/2009US20090302317 Switching device and testing apparatus
12/10/2009US20090302316 Thin film transistor array panel
12/10/2009US20090302315 Resistive random access memory
12/10/2009US20090302314 P-type zinc oxide thin film and method for forming the same
12/10/2009US20090302308 Group iii nitride white light emitting diode
12/10/2009US20090302306 Nano Electronic Device and Fabricating Method of The Same
12/10/2009US20090302305 Self-constrained anisotropic germanium nanostructure from electroplating
12/10/2009US20090302304 Doped semiconductor nanocrystals and methods of making same
12/10/2009US20090302274 Spirobifluorene derivatives, their preparation and uses thereof
12/10/2009US20090301564 Upon excitation, one carrier confined to core and other carrier confined to overcoating; band gaps; photovoltaic devices, photoconductors
12/10/2009US20090301554 Glass compositions used in conductors for photovoltaic cells
12/10/2009US20090301553 Glass compositions used in conductors for photovoltaic cells
12/10/2009DE10361829B4 Verfahren zur Herstellung eines Halbleiterbauelements A process for producing a semiconductor device
12/10/2009DE102009001944A1 Laterale Halbleitervorrichtung Lateral semiconductor device
12/10/2009DE102008025243B3 Halbleiterbauelement mit asymmetrischem Randabschluss Semiconductor component with asymmetrical edge termination
12/10/2009DE102005046480B4 Verfahren zur Herstellung eines vertikalen Transistorbauelements und vertikales Transistorbauelement Process for the preparation of a vertical transistor device and vertical transistor device
12/09/2009EP2131400A1 Organic field effect transistor
12/09/2009EP2131399A2 Insulated gate semiconductor device and method of manufacturing the same
12/09/2009EP2131398A1 Compound semiconductor laminate, process for producing the compound semiconductor laminate, and semiconductor device
12/09/2009EP2131395A1 Semiconductor device and manufacturing method for the same
12/09/2009EP2130670A1 Thin-film laminate, and organic transistor using the same
12/09/2009EP2130229A1 Charge storage nanostructure
12/09/2009EP2130228A1 Capacitor-less floating-body volatile memory cell comprising a pass transistor and a vertical read/write enable transistor and manufacturing and programming methods thereof
12/09/2009EP2129620A1 Nanowire circuit architecture
12/09/2009EP1468439B1 Method of forming a high voltage semiconductor device having a voltage sustaining region
12/09/2009EP1145300B1 Method of manufacturing a mis transistor on a semiconductor substrate
12/09/2009EP1051755B1 A transistor of sic
12/09/2009EP0960440B1 A SCHOTTKY DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF
12/09/2009CN201360006Y Commutation diode
12/09/2009CN201360004Y Table-top type thyristor surge suppressor chip
12/09/2009CN101601148A Thin film laminated body, thin film magnetic sensor using the thin film laminated body and method for manufacturing the thin film laminated body
12/09/2009CN101601138A Semiconductor device and production method thereof
12/09/2009CN101599509A Capacitor of semiconductor device and manufacturing method thereof
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