Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2009
12/03/2009US20090294821 Semiconductor device having driving transistors
12/03/2009US20090294819 Methods for enhancing capacitors having roughened features to increase charge-storage capacity
12/03/2009US20090294817 Ferroelectric memory device
12/03/2009US20090294810 Microstructure device including a compressively stressed low-k material layer
12/03/2009US20090294809 Reduction of metal silicide diffusion in a semiconductor device by protecting sidewalls of an active region
12/03/2009US20090294808 Thin Film Transistor, Method for Manufacturing the Same and Film Formation Apparatus
12/03/2009US20090294807 Methods of Fabricating Transistors and Structures Thereof
12/03/2009US20090294806 Method of Improving Minority Lifetime in Silicon Channel and Products Thereof
12/03/2009US20090294805 Virtual semiconductor nanowire, and methods of using same
12/03/2009US20090294803 Methods and devices for fabricating and assembling printable semiconductor elements
12/03/2009US20090294802 Field effect transistor with frequency dependent gate-channel capacitance
12/03/2009US20090294800 Hybrid fet incorporating a finfet and a planar fet
12/03/2009US20090294799 Semiconductor device
12/03/2009US20090294798 Bipolar Device Compatible with CMOS Process Technology
12/03/2009US20090294777 Method for forming a group iii nitride material on a silicon substrate
12/03/2009US20090294776 Highly Oxygen-Sensitive Silicon Layer and Method for Obtaining Same
12/03/2009US20090294775 Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same
12/03/2009US20090294774 MANUFACTURING METHOD OF GaN THIN FILM TEMPLATE SUBSTRATE, GaN THIN FILM TEMPLATE SUBSTRATE AND GaN THICK FILM SINGLE CRYSTAL
12/03/2009US20090294770 Semiconductor device
12/03/2009US20090294769 Semiconductor device and a method of manufacturing the same
12/03/2009US20090294768 Self-aligned thin-film transistor and method of forming same
12/03/2009US20090294766 Process for Eliminating Delamination between Amorphous Silicon Layers
12/03/2009US20090294765 Semiconductor device, method for producing the same, sensor and electro-optical device
12/03/2009US20090294764 Oxide semiconductors and thin film transistors comprising the same
12/03/2009US20090294759 Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure
12/03/2009US20090294758 ZnO-CONTAINING SEMICONDUCTOR LAYER, ITS MANUFACTURE METHOD, AND SEMICONDUCTOR LIGHT EMITTING DEVICE
12/03/2009US20090294757 Semiconductor Nanowire Vertical Device Architecture
12/03/2009US20090294756 Light emitting diode structure and method for fabricating the same
12/03/2009US20090294755 Fabricating Arrays Of Metallic Nanostructures
12/03/2009US20090294754 Novel techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
12/03/2009US20090294753 Carbon nanotube diameter selection by pretreatment of metal catalysts on surfaces
12/03/2009US20090293942 Inorganic Substrate With A Thin Silica Type Glass Layer, Method of Manufacturing The Aforementioned Substrate, Coating Agent, And A Semiconductor Device
12/03/2009US20090293604 Multi-chip package
12/03/2009DE4343140B4 Halbleiteranordnung zur Beeinflussung der Durchbruchsspannung von Transistoren A semiconductor device for influencing the breakdown voltage of transistors
12/03/2009DE102008052422A1 Halbleitervorrichtung mit reduzierter Kapazität A semiconductor device with a reduced capacity
12/03/2009DE102008047127A1 Integral ausgebildete Drain- und Source-Gebiete in einem Silizium/Germanium enthaltenden Transistorbauelement Integrally formed drain and source regions containing a silicon / germanium transistor device
12/03/2009DE102008026182A1 Mikrostrukturbauelement mit einem kompressiv verspannten Material mit kleinem ε Microstructure device with a compressively stressed material with small ε
12/03/2009DE102008026135A1 Steuerung für tiefe Temperaturen in einem Halbleiterbauelement Control for low temperatures in a semiconductor device
12/03/2009DE102008023216A1 MOS-semiconductor power component e.g. MOS power transistor, operating temperature measuring method, involves measuring electrical resistance of gate electrode, and determining temperature of power component from resistance
12/03/2009DE102004034277B4 Vorrichtung, insbesondere in einer integrierten Schaltungsanordnung, und Verfahren zur Erfassung eines mechanischen Stresszustands in einem Halbleitersubstrat Device, in particular in an integrated circuit assembly, and methods for detecting a mechanical stress condition in a semiconductor substrate
12/03/2009DE10131707B4 Verfahren zur Herstellung eines DMOS-Transistors und dessen Verwendung zur Herstellung einer integrierten Schaltung A process for the preparation of a DMOS transistor, and its use for the manufacture of an integrated circuit
12/03/2009CA2725835A1 Method for led-module assembly
12/02/2009EP2128902A2 Thin film electronic device and methods for fabricating an electronic device
12/02/2009EP2128898A1 Active matrix substrate
12/02/2009EP2128895A2 Semiconductor wafer
12/02/2009EP2126977A1 Electronic device including channel regions lying at different elevations and processes of forming the same
12/02/2009EP2126972A1 Method for self-monitoring the breakdown in semiconductor components and semiconductor component adapted thereto
12/02/2009EP2126966A1 Amorphous insulator film and thin-film transistor
12/02/2009EP1702365B1 Enhancement of electron and hole mobilities in 110 under biaxial compressive strain
12/02/2009EP1415334B1 Manufacture of semiconductor devices with schottky barriers
12/02/2009EP1198852B1 Preferred methods for producing electrical circuit elements used to control an electronic display
12/02/2009CN101595568A Thin film semiconductor device fabrication method and thin film semiconductor device
12/02/2009CN101595567A Semiconductor device and display device
12/02/2009CN101595566A Electronic device and method of making the same
12/02/2009CN101595565A Method of producing precision vertical and horizontal layers in a vertical semiconductor structure
12/02/2009CN101595555A FLOTOX-type EEPROM
12/02/2009CN101595532A Buffer compositions
12/02/2009CN101593777A Capacitor structure and metal layer layout thereof
12/02/2009CN101593776A A self-protection structure of a power device within an expanded voltage range and method
12/02/2009CN101593775A Metal oxide semiconductor field effect transistor
12/02/2009CN101593774A Laterally double diffused metal oxide semiconductor transistor of silicon on P-type insulator
12/02/2009CN101593773A Trench-type power MOS transistor and integrated circuit utilizing the same
12/02/2009CN101593772A Mos transistor and forming method thereof
12/02/2009CN101593771A Semiconductor device and formation method thereof
12/02/2009CN101593770A Grid and formation method thereof
12/02/2009CN101593758A Drive circuit, active matrix substrate, and liquid crystal display device
12/02/2009CN101593751A Integrated circuit structure
12/02/2009CN101593703A Method for manufacturing metal oxide semiconductor field effect transistor and device thereof
12/02/2009CN101593700A Side wall and semiconductor device and forming method thereof
12/02/2009CN101593687A Polysilicon grid, side wall, and semiconductor device and forming method thereof
12/02/2009CN101593684A Polysilicon gate, semiconductor device and formation method thereof
12/02/2009CN101593683A Grid and formation method thereof
12/02/2009CN101592829A Thin film transistor in liquid crystal display and manufacturing method thereof
12/02/2009CN101592626A Quasi-one-dimensional metal oxide nano-material biosensor and method for manufacturing same
12/02/2009CN100566167C Film semiconductor integrated circuit
12/02/2009CN100566150C Oscillator and semiconductor device
12/02/2009CN100565958C Method for forming electronic device, electronic device and electronic switch device
12/02/2009CN100565956C Device with N-type semiconductor
12/02/2009CN100565932C Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique
12/02/2009CN100565931C Nonvolatile semiconductor memory device and method of manufacturing the same
12/02/2009CN100565930C Nonvolatile semiconductor memory device
12/02/2009CN100565929C Non-volatile memory and method of fabricating same
12/02/2009CN100565928C Tunneling film transistor, method of manufacturing the same, and display employing the same
12/02/2009CN100565927C Method of forming a transistor having a dual layer dielectric
12/02/2009CN100565926C Semiconductor device, SRAM and manufacturing method of semiconductor device
12/02/2009CN100565925C TFT, method of manufacturing the TFT, flat panel display having the TFT, and method of manufacturing the flat panel display
12/02/2009CN100565924C Integrated driver for mems device using high voltage thin film transistors
12/02/2009CN100565923C High voltage metal-oxide-semiconductor transistor and manufacturing method thereof
12/02/2009CN100565922C Field effect transistor, integrated circuit element, and method for manufacturing the same
12/02/2009CN100565921C Semiconductor device and its manufacturing method
12/02/2009CN100565920C Trench MOSFET and method for manufacturing same
12/02/2009CN100565919C Charge compensation semiconductor device and related manufacturing process
12/02/2009CN100565918C Transistor, display device including the same, and manufacturing method thereof
12/02/2009CN100565917C Semiconductor device edge termination structure and method
12/02/2009CN100565916C Semiconductor device and production method
12/02/2009CN100565915C Power semiconductor device
12/02/2009CN100565914C Semiconductor device
12/02/2009CN100565913C Semiconductor device
12/02/2009CN100565912C High k dielectric film
12/02/2009CN100565911C Electronic apparatus thin-film transistor structure and flat plate display device equipped with same
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