Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2009
12/08/2009US7629183 Method for manufacturing semiconductor device and computer storage medium
12/08/2009US7628840 Metal nano-particles and method for preparing the same, dispersion of metal nano-particles and method for preparing the same, and thin metallic wire and metal film and method for preparing these substances
12/08/2009CA2355869C Semiconducting polymer field effect transistor
12/03/2009WO2009146266A1 Method and apparatus for generating white light from solid state light emitting devices
12/03/2009WO2009145963A1 Capacitive sensor with stress relief that compensates for package stress
12/03/2009WO2009145892A1 Method for led-module assembly
12/03/2009WO2009145581A2 Oxide semiconductor and thin film transistor including same
12/03/2009WO2009145373A1 Packaging substrate and gas sensing device having the same, and method for manufacturing the same
12/03/2009WO2009145111A1 Semiconductor device
12/03/2009WO2009144918A1 Thin film transistor, method for manufacturing the same, and electronic device using thin film transistor
12/03/2009WO2009144915A1 Semiconductor device and manufacturing method thereof
12/03/2009WO2009144902A1 Field effect transistor and method for manufacturing the same
12/03/2009WO2009144874A1 Finfet with impurity blocking portion on an upper surface of fin
12/03/2009WO2009144870A1 Semiconductor device and manufacturing method thereof
12/03/2009WO2009144641A1 Semiconductor device with dummy gate electrode and corresponding integrated circuit and manufacturing method
12/03/2009WO2009144640A1 Trench gate semiconductor device and method of manufacturing thereof.
12/03/2009WO2009144617A1 Ldmos transistor
12/03/2009WO2009144616A1 Ldmos transistor
12/03/2009WO2009144113A1 Semiconductor component with asymmetrical edge termination
12/03/2009WO2009111305A3 Silicon-germanium-carbon semiconductor structure
12/03/2009WO2006086387A9 Semiconductor light-emitting device
12/03/2009US20090300805 Photon-Emission Scanning Tunneling Microscopy
12/03/2009US20090299213 Nanobioelectronics
12/03/2009US20090298273 Methods of forming recessed gate electrodes having covered layer interfaces
12/03/2009US20090298268 Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same
12/03/2009US20090296477 Nonvolatile Memory Devices Having Electromagnetically Shielding Source Plates
12/03/2009US20090296461 Memory Devices and Related Data Storage Devices and Systems Including the Same
12/03/2009US20090296457 Phase change random access memory and methods of manufacturing and operating same
12/03/2009US20090296451 Resistance change memory, and data write and erase methods thereof
12/03/2009US20090295699 Drive circuit, active matrix substrate, and liquid crystal display device
12/03/2009US20090294967 Diodes, And Methods Of Forming Diodes
12/03/2009US20090294965 Method of Manufacturing A Semiconductor Device
12/03/2009US20090294926 Deep trench in a semiconductor structure
12/03/2009US20090294925 MECHANICALLY ROBUST METAL/LOW-k INTERCONNECTS
12/03/2009US20090294924 Hafnium lanthanide oxynitride films
12/03/2009US20090294909 N-type group III nitride-based compound semiconductor and production method therefor
12/03/2009US20090294907 Semiconductor component with mim capacitor
12/03/2009US20090294906 Semiconductor device and fabrication method for the same, and light modulation device and fabrication method for the same
12/03/2009US20090294905 Semiconductor device
12/03/2009US20090294904 Integrated circuit system employing back end of line via techniques
12/03/2009US20090294902 Semiconductor device and method of manufacturing the same
12/03/2009US20090294897 Seal ring structure for integrated circuits
12/03/2009US20090294896 Shallow trench isolation process utilizing differential liners
12/03/2009US20090294895 Integrated circuit with conductive structures
12/03/2009US20090294894 INTEGRATED CIRCUIT HAVING LOCALIZED EMBEDDED SiGe AND METHOD OF MANUFACTURING
12/03/2009US20090294893 Isolation trench intersection structure with reduced gap width
12/03/2009US20090294892 Edge Termination for Semiconductor Devices
12/03/2009US20090294891 Semiconductor device
12/03/2009US20090294884 Solid-state imaging device and method for manufacturing the same
12/03/2009US20090294881 Semiconductor device and manufacturing method thereof
12/03/2009US20090294880 Method for manufacturing a sensor element, and sensor element
12/03/2009US20090294879 Method for Capping a MEMS Wafer
12/03/2009US20090294878 Circuitry and gate stacks
12/03/2009US20090294877 Semiconductor device and manufacturing method thereof
12/03/2009US20090294876 Method for deposition of an ultra-thin electropositive metal-containing cap layer
12/03/2009US20090294875 Metal Oxide Semiconductor Device and Method for Manufacturing the Same
12/03/2009US20090294874 Method of Fabricating Semiconductor Apparatus Having Saddle-Fin Transistor and Semiconductor Apparatus Fabricated Thereby
12/03/2009US20090294873 Field effect structure and method including spacer shaped metal gate with asymmetric source and drain regions
12/03/2009US20090294872 Ge/Xe IMPLANTS TO REDUCE JUNCTION CAPACITANCE AND LEAKAGE
12/03/2009US20090294871 Semiconductor devices having rare earth metal silicide contact layers and methods for fabricating the same
12/03/2009US20090294867 Dual metal gates using one metal to alter work function of another metal
12/03/2009US20090294864 Mos field effect transistor having plurality of channels
12/03/2009US20090294863 Semiconductor Memory Device Having Three Dimensional Structure
12/03/2009US20090294859 Trench MOSFET with embedded junction barrier Schottky diode
12/03/2009US20090294858 Transistor with contact over gate active area
12/03/2009US20090294857 Method for Manufacturing Semiconductor Apparatus Having Saddle-Fin Transistor and Semiconductor Apparatus Fabricated Thereby
12/03/2009US20090294856 I/o and power esd protection circuits by enhancing substrate-bias in deep-submicron cmos process
12/03/2009US20090294855 Electrostatic Discharge Protection Device
12/03/2009US20090294854 Halo-first ultra-thin soi fet for superior short channel control
12/03/2009US20090294853 Thin film transistor having a common channel and selectable doping configuration
12/03/2009US20090294852 Electronic device
12/03/2009US20090294851 Semiconductor Device and Method for Fabricating the Same
12/03/2009US20090294850 Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device
12/03/2009US20090294849 Resurf semiconductor device charge balancing
12/03/2009US20090294848 Semiconductor device having transistor and method of manufacturing the same
12/03/2009US20090294847 Plasma Display Apparatus
12/03/2009US20090294846 Trench-type power mos transistor and integrated circuit utilizing the same
12/03/2009US20090294845 Insulated gate type semiconductor device and method for fabricating the same
12/03/2009US20090294844 Semiconductor device
12/03/2009US20090294843 Enclosed void cavity for low dielectric constant insulator
12/03/2009US20090294842 Methods of forming data cells and connections to data cells
12/03/2009US20090294841 Formation of a MOSFET Using an Angled Implant
12/03/2009US20090294840 Methods of providing electrical isolation and semiconductor structures including same
12/03/2009US20090294839 Recessed channel array transistor (rcat) structures and method of formation
12/03/2009US20090294838 Non-volatile semiconductor memory devices
12/03/2009US20090294837 Nonvolatile Memory Devices Having a Fin Shaped Active Region
12/03/2009US20090294836 Nonvolatile semiconductor storage device and method for manufacturing same
12/03/2009US20090294835 Semiconductor memory device including laminated gate having electric charge accumulating layer and control gate and method of manufacturing the same
12/03/2009US20090294834 Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and method of manufacturing flat panel display device provided with the nonvolatile memory device
12/03/2009US20090294833 Semiconductor memory device and method of fabricating the same
12/03/2009US20090294832 Semiconductor Device
12/03/2009US20090294831 Semiconductor Constructions, Methods Of Forming Transistor Gates, And Methods Of Forming NAND Cell Units
12/03/2009US20090294830 Memory device with high dielectric constant gate dielectrics and metal floating gates
12/03/2009US20090294829 Nand flash memory and method of manufacturing the same
12/03/2009US20090294828 Nonvolatile semiconductor memory device and method for manufacturing same
12/03/2009US20090294827 Semiconductor memory device and manufacturing method thereof
12/03/2009US20090294826 Semiconductor Device and Method of Fabricating the Same
12/03/2009US20090294825 Storage cell having a t-shaped gate electrode and method for manufacturing the same
12/03/2009US20090294824 Nonvolatile semiconductor memory device
12/03/2009US20090294823 Method of manufacturing a semiconductor integrated circuit using a selective disposal spacer technique and semiconductor integrated circuit manufactured thereby
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