Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2010
03/25/2010WO2010032611A1 Semiconductor device and method for manufacturing the same
03/25/2010WO2010032608A1 Molecular device, method for manufacturing the molecular device, integrated circuit device, method for manufacturing the integtrated circuit device, three-dimensional integrated circuit device, and method for manufacturing the three-dimensional integrated circuit device
03/25/2010WO2010032519A1 Motherboard, motherboard manufacturing method and device board
03/25/2010WO2010032431A1 Thin film transistor having crystalline indium oxide semiconductor film
03/25/2010WO2010032425A1 Semiconductor element
03/25/2010WO2010032386A1 Semiconductor device
03/25/2010WO2010032355A1 Method for manufacturing flexible semiconductor device and multilayer film used therein
03/25/2010WO2010032174A1 Fin field effect transistor (finfet)
03/25/2010WO2010008754A3 Methods for forming an amorphous silicon film in display devices
03/25/2010WO2009158117A3 Chemical modulation of electronic and magnetic properties of graphene
03/25/2010US20100075562 Thin film transistor array panel and method for repairing liquid crystal display including the same
03/25/2010US20100075463 Method and apparatus for fabricating self-assembling microstructures
03/25/2010US20100075442 Semiconductor wafer processing apparatus, reference angular position detection method, and semiconductor wafer
03/25/2010US20100074029 Nonvolatile semiconductor memory device and operation method thereof
03/25/2010US20100074023 Semiconductor device having non-volatile memory and method of fabricating the same
03/25/2010US20100074013 Semiconductor Device and Method of Fabricating the Same
03/25/2010US20100073995 Nano -electronic array
03/25/2010US20100073989 Nonvolatile ferroelectric memory device using silicon substrate, method for manufacturing the same, and refresh method thereof
03/25/2010US20100073588 Liquid crystal display device
03/25/2010US20100073352 Semiconductor element, electric circuit, display device and light-emitting device
03/25/2010US20100073031 Nanotube-based switching elements with multiple controls and logic circuits having said elements
03/25/2010US20100072976 Sensing element, manufacturing method thereof, and biological detection system employing such sensing element
03/25/2010US20100072581 Composition for film formation, insulating film, semiconductor device, and process for producing the semiconductor device
03/25/2010US20100072580 Ultra-thin oxide bonding for si to si dual orientation bonding
03/25/2010US20100072577 Methods and Devices for Fabricating and Assembling Printable Semiconductor Elements
03/25/2010US20100072576 Methods and structures for altering strain in iii-nitride materials
03/25/2010US20100072575 Layout patterns for deep well region to facilitate routing body-bias voltage
03/25/2010US20100072574 Semiconductor Device and Manufacturing Method Thereof
03/25/2010US20100072573 Method of forming a high capacitance diode and structure therefor
03/25/2010US20100072572 Semiconductor device
03/25/2010US20100072569 Method of forming an isolation layer, method of manufacturing a semiconductor device using the same, and semiconductor device having an isolation layer
03/25/2010US20100072566 Magnetic Element Utilizing Protective Sidewall Passivation
03/25/2010US20100072565 Soft Mems
03/25/2010US20100072563 Substrate bonded mems sensor
03/25/2010US20100072562 Functional element package and fabrication method therefor
03/25/2010US20100072561 Method for fabricating micro-electro-mechanical system (mems) device
03/25/2010US20100072556 Semiconductor device and associated methods
03/25/2010US20100072554 Semiconductor device
03/25/2010US20100072552 Field effect transistor for preventing collapse or deformation of active regions
03/25/2010US20100072551 Semiconductor device and manufacturing method of the semiconductor device
03/25/2010US20100072549 Semiconductor device and method for manufacturing the same
03/25/2010US20100072548 Semiconductor Device and Method for Manufacturing the Same
03/25/2010US20100072547 Techniques for curvature control in power transistor devices
03/25/2010US20100072545 Recessed Channel Array Transistors, and Semiconductor Devices Including a Recessed Channel Array Transistor
03/25/2010US20100072544 Method of forming an mos transistor and structure therefor
03/25/2010US20100072543 Trench mosfet with etching buffer layer in trench gate
03/25/2010US20100072542 Semiconductor device, method for manufacturing the same, and data processing system
03/25/2010US20100072541 Semiconductor device with increased channel area and decreased leakage current
03/25/2010US20100072540 Electronic circuit control element with tap element
03/25/2010US20100072539 Memory cell of nonvolatile semiconductor memory device
03/25/2010US20100072537 Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection
03/25/2010US20100072536 Non-volatile memory device and method of manufacturing the same
03/25/2010US20100072535 Nonvolatile semiconductor memory device
03/25/2010US20100072534 Nonvolatile semiconductor memory device and method of fabricating the same
03/25/2010US20100072530 Magnetic random access memorty
03/25/2010US20100072529 Stack having heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same
03/25/2010US20100072528 Spin transistor, integrated circuit, and magnetic memory
03/25/2010US20100072526 Semiconductor memory device
03/25/2010US20100072524 Magnetic Devices Having Oxide Antiferromagnetic Layer Next To Free Ferromagnetic Layer
03/25/2010US20100072522 Semiconductor device and fabrication method thereof
03/25/2010US20100072521 Method for forming silicide of semiconductor device
03/25/2010US20100072520 Methods of Fabricating Transistors Having Buried P-Type Layers Coupled to the Gate
03/25/2010US20100072519 P-channel power mis field effect transistor and switching circuit
03/25/2010US20100072518 Semiconductor devices and methods of fabricating same
03/25/2010US20100072517 Bipolar/dual FET structure including enhacement and depletion mode fets with isolated channels
03/25/2010US20100072516 Nitride semiconductor device
03/25/2010US20100072515 Fabrication and structures of crystalline material
03/25/2010US20100072513 Semiconductor heterostructures and manufacturing thereof
03/25/2010US20100072512 Silicon break over diode
03/25/2010US20100072503 Electro-optical device and electronic apparatus
03/25/2010US20100072495 Contact structure and semiconductor device
03/25/2010US20100072485 Semiconductor device and semiconductor manufacturing method
03/25/2010US20100072484 Heteroepitaxial gallium nitride-based device formed on an off-cut substrate
03/25/2010US20100072480 Thin film transistor and method of manufacturing the same
03/25/2010US20100072476 Pixel structure, display panel, photoelectric device and manufacturing method thereof
03/25/2010US20100072475 Self-aligned masks using multi-temperature phase-change materials
03/25/2010US20100072474 Semiconductor Device
03/25/2010US20100072472 Nanostructures With 0, 1, 2, and 3 Dimensions, With Negative Differential Resistance and Method for Making These Nanostructures
03/25/2010US20100072469 Display device and manufacturing method of the same
03/25/2010US20100072468 Display device
03/25/2010US20100072467 Semiconductor device
03/25/2010US20100072466 Electronic Circuit with Repetitive Patterns Formed by Shadow Mask Vapor Deposition and a Method of Manufacturing an Electronic Circuit Element
03/25/2010US20100072465 Barium copper sulfur fluoride transparent conductive thin films and bulk material
03/25/2010US20100072461 Thermo-electric semiconductor device and method for manufacturing the same
03/25/2010US20100072460 Nanoelectronic device
03/25/2010US20100072459 Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same
03/25/2010US20100072458 Methods For Sorting Nanotubes By Wall Number
03/25/2010US20100072455 Well-Structure Anti-Punch-through Microwire Device
03/25/2010US20100071766 Semiconductor device having a multi-layer substrate and a method of forming the semiconductor device
03/25/2010DE102009042726A1 Bipolartransistorsimulationsmodell Bipolartransistorsimulationsmodell
03/25/2010DE102009039126A1 Komparator mit ultraniedrigem Stromverbrauch für Thermoabschalten Comparator with ultra-low power consumption for Thermoabschalten
03/25/2010DE102009031378A1 Leistungstransistor Power transistor
03/25/2010DE102009031314A1 Halbleiterbauelement aus Silizium mit bereichsweise vermindertem Bandabstand und Verfahren zur Herstellung desselben Of the same semiconductor device made of silicon with partially reduced bandgap and methods of making
03/25/2010DE102008035809B3 Technik zum Verringern der Silizidungleichmäßigkeiten in Polysiliziumgateelektroden durch eine dazwischenliegende Diffusionsblockierschicht Technique for reducing the Silizidungleichmäßigkeiten in polysilicon gate electrode by an intermediate diffusion blocking layer
03/24/2010EP2166575A1 Compound semiconductor device and manufacturing method of the same
03/24/2010EP2166574A1 Zno-based thin film and zno-based semiconductor element
03/24/2010EP2166573A2 High-voltage vertical transistor with a varied width silicon pillar
03/24/2010EP2166571A1 Memory device and its reading method
03/24/2010EP2166565A2 P-channel power mis field effect transistor and switching circuit
03/24/2010EP2166366A1 Magnetic field sensor
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