Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2010
04/01/2010US20100078715 Lateral dmos transistor and method for fabricating the same
04/01/2010US20100078714 Trench metal oxide-semiconductor transistor and fabrication method thereof
04/01/2010US20100078713 Semiconductor component structure with vertical dielectric layers
04/01/2010US20100078711 Method of manufacturing integrated circuits including a fet with a gate spacer
04/01/2010US20100078710 Semiconductor component with a drift zone and a drift control zone
04/01/2010US20100078709 Semiconductor device
04/01/2010US20100078708 Mos transistor having an increased gate-drain capacitance
04/01/2010US20100078707 Semiconductor device and manufacturing method thereof
04/01/2010US20100078706 Nonvolatile semiconductor memory device and method of manufacturing nonvolatile semiconductor memory device
04/01/2010US20100078705 Non-volatile memory semiconductor device
04/01/2010US20100078704 Semiconductor storage element and manufacturing method thereof
04/01/2010US20100078703 Split-gate non-volatile memory cell and method
04/01/2010US20100078702 Semiconductor storage device and method for manufacturing the same
04/01/2010US20100078701 Three-dimensional microelectronic devices including repeating layer patterns of different thicknesses
04/01/2010US20100078699 Nonvolatile semiconductor storage device
04/01/2010US20100078698 Vertical semiconductor device, dram device including the same
04/01/2010US20100078691 Transistor with embedded si/ge material having enhanced across-substrate uniformity
04/01/2010US20100078690 Semiconductor integrated circuit device and a method for manufacturing a semiconductor integrated circuit device
04/01/2010US20100078689 Transistor with embedded si/ge material having reduced offset to the channel region
04/01/2010US20100078688 Nitride semiconductor device, nitride semiconductor package, and method for manufacturing nitride semiconductor device
04/01/2010US20100078687 Method for Transistor Fabrication with Optimized Performance
04/01/2010US20100078685 Semiconductor memory device
04/01/2010US20100078684 Selective high-k dielectric film deposition for semiconductor device
04/01/2010US20100078683 Semiconductor device
04/01/2010US20100078682 Power mosfet having a strained channel in a semiconductor heterostructure on metal substrate
04/01/2010US20100078681 Integrated Circuit Including a Hetero-Interface and Self Adjusted Diffusion Method for Manufacturing the Same
04/01/2010US20100078678 Semiconductor electronic device and method of manufacturing the same
04/01/2010US20100078677 Semiconductor device
04/01/2010US20100078676 Semiconductor device
04/01/2010US20100078674 Insulated gate bipolar transistor
04/01/2010US20100078673 Active semiconductor component with a reduced surface area
04/01/2010US20100078666 Electro-optical device, electronic apparatus, and transistor
04/01/2010US20100078654 Semiconductor device and method of fabricating the same
04/01/2010US20100078653 Transistor having a high-k metal gate stack and a compressively stressed channel
04/01/2010US20100078652 Diamond electronic devices including a surface and methods for their manufacture
04/01/2010US20100078651 Electronic field effect devices and methods for their manufacture
04/01/2010US20100078650 Semiconductor device
04/01/2010US20100078648 Gallium nitride-based epitaxial wafer and method of fabricating epitaxial wafer
04/01/2010US20100078647 Thin film transistor substrate and organic light emitting display having the same
04/01/2010US20100078645 Semiconductor device comprising a buried poly resistor
04/01/2010US20100078644 Insulating film pattern, method for manufacturing the same, and method for manufacturing thin film transistor substrate using the same
04/01/2010US20100078642 Layered structure and electron device that uses such a layered structure, fabrication process thereof, electron device array and display apparatus
04/01/2010US20100078639 Thin film semiconductor device fabrication method and thin film semiconductor device
04/01/2010US20100078634 Semiconductor device
04/01/2010US20100078633 Insulated gate type transistor and display device
04/01/2010US20100078626 P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for manufacturing p-type semiconductor material
04/01/2010US20100078623 Semiconductor method and device
04/01/2010US20100078617 Method to reduce a via area in a phase change memory cell
04/01/2010DE102009039573A1 Bipolartransistor des Typs mit Poly-Emitter, Bipolar-CMOS-DMOS-Bauelement und Verfahren zur Herstellung eines Bipolartransistors des Typs mit Poly-Emitter und eines Bipolar-CMOS-DMOS-Bauelements Bipolar transistor of the type having poly-emitter, bipolar-CMOS-DMOS device and method for fabricating a bipolar transistor of the type having poly-emitter and of a bipolar-CMOS-DMOS device
04/01/2010DE102009038701A1 Verfahren zum Herstellen eines Halbleiterbauelements A method of manufacturing a semiconductor device
04/01/2010DE102007030021B4 Verfahren zum Ausbilden einer Halbleiterstruktur mit einem Feldeffekttransistor, der ein verspanntes Kanalgebiet aufweist und Halbleiterstruktur A method of forming a semiconductor structure with a field effect transistor having a stressed channel region and the semiconductor structure
04/01/2010DE10152882B4 Halbleiterdrucksensor mit Signalprozessorschaltkreis A semiconductor pressure sensor having a signal processing circuit
03/2010
03/31/2010EP2169731A1 Light-emitting element array, light-emitting device, and image forming device
03/31/2010EP2169722A1 Pn diode, electric circuit device and power conversion device
03/31/2010EP2169715A2 Integrated switching assembly with condenser and production method
03/31/2010EP2169711A1 Semiconductor device, semiconductor device manufacturing method, display device and display device manufacturing method
03/31/2010EP2169709A1 Diamond semiconductor device
03/31/2010EP2168164A2 Small gauge pressure sensor using wafer bonding and electrochemical etch stopping
03/31/2010EP2168163A1 Junction field effect transistor with a hyperabrupt junction
03/31/2010EP2168162A1 Hetero-structure field effect transistor, integrated circuit including a hetero-structure field effect transistor and method for manufacturing a hetero-structure field effect transistor
03/31/2010EP0974158B1 Method of manufacturing a semiconductor device
03/31/2010CN201435391Y High antistatic schottky diode
03/31/2010CN201435388Y Lead frame used for encapsulating MOSFET
03/31/2010CN101689600A Magnetoresistive element and magnetic random access memory
03/31/2010CN101689570A Cascode circuit employing a depletion-mode, gan-based fet
03/31/2010CN101689566A Semiconductor device, semiconductor device manufacturing method and image display device
03/31/2010CN101689565A 半导体元件 Semiconductor device
03/31/2010CN101689564A Hetero-structure field effect transistor, integrated circuit including a hetero-structure field effect transistor and method for manufacturing a hetero-structure field effect transistor
03/31/2010CN101689563A High voltage gan-based heterojunction transistor structure and method of forming same
03/31/2010CN101689562A 半导体器件 Semiconductor devices
03/31/2010CN101689561A Termination and contact structures for a high voltage gan-based heterojunction transistor
03/31/2010CN101689560A Semiconductor device
03/31/2010CN101689547A Memory device and its reading method
03/31/2010CN101689546A Power semiconductor device, power semiconductor device manufacturing method, and motor drive device
03/31/2010CN101689532A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
03/31/2010CN101689510A Semiconductor device, semiconductor device manufacturing method, display device and display device manufacturing method
03/31/2010CN101689509A Method for forming a dual metal gate structure
03/31/2010CN101689508A Method for forming a dual metal gate structure
03/31/2010CN101689507A An extended drain transistor and a method of manufacturing the same
03/31/2010CN101689506A Semiconductor device with stressors and methods thereof
03/31/2010CN101689485A Laminated film manufacturing method, semiconductor device manufacturing method, semiconductor device and display device
03/31/2010CN101689479A Semiconductor device and its manufacturing method
03/31/2010CN101687992A Diamine compound, polyamic acid, soluble polyimide, composition, wettability changing film, electrode, and method of manufacturing a wettability changing film
03/31/2010CN101687631A Nanowire circuit architecture
03/31/2010CN101685836A Wafer level upright type diode packaging structure and manufacture method thereof
03/31/2010CN101685835A Semiconductor device and method for manufacturing the same
03/31/2010CN101685834A Method of forming an mos transistor and structure therefor
03/31/2010CN101685833A Semiconductor structure
03/31/2010CN101685832A Semiconductor device
03/31/2010CN101685831A High-speed thyristor
03/31/2010CN101685830A Novel perovskite manganese-base oxide film material and preparation method thereof
03/31/2010CN101685827A Memory device and its manufacturing method
03/31/2010CN101685821A Floating gate memory device with interpoly charge trapping structure and manufacturing method thereof
03/31/2010CN101685820A Semiconductor element, memory element and manufacture method thereof
03/31/2010CN101685819A 半导体装置 Semiconductor device
03/31/2010CN101685802A Semiconductor device and method of fabricating the same
03/31/2010CN101685799A Semiconductor device and method of fabricating the same
03/31/2010CN101685798A Integrated circuit and a method of making an integrated circuit to provide a gate contact over a diffusion region
03/31/2010CN101685780A Semiconductor device and method for making a semiconductor device having metal gate stacks
03/31/2010CN101685779A Manufacturing method of self-aligned metal silicides
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