| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/15/2010 | US20100090280 Transistors, semiconductor memory cells having a transistor and methods of forming the same |
| 04/15/2010 | US20100090279 Method for fabricating a transistor using a soi wafer |
| 04/15/2010 | US20100090278 High-Voltage Transistor with High Current Load Capacity and Method for its Production |
| 04/15/2010 | US20100090277 Lateral trench fets (field effect transistors) |
| 04/15/2010 | US20100090276 Shielded gate trench (SGT) MOSFET devices and manufacturing processes |
| 04/15/2010 | US20100090275 Transistor structure having an active region and a dielectric platform region |
| 04/15/2010 | US20100090274 Trench mosfet with shallow trench contact |
| 04/15/2010 | US20100090273 Transistor structure having dual shield layers |
| 04/15/2010 | US20100090272 Transistor structure having a conductive layer formed contiguous in a single deposition |
| 04/15/2010 | US20100090271 Power Switching Semiconductor Devices Including Rectifying Junction-Shunts |
| 04/15/2010 | US20100090269 Transistor structure having a trench drain |
| 04/15/2010 | US20100090268 Semiconductor device and memory |
| 04/15/2010 | US20100090267 Nonvolatile memory devices and methods of forming the same |
| 04/15/2010 | US20100090266 Semiconductor device having controllable transistor threshold voltage |
| 04/15/2010 | US20100090265 High density nanodot nonvolatile memory |
| 04/15/2010 | US20100090262 Spin transistor, programmable logic circuit, and magnetic memory |
| 04/15/2010 | US20100090261 Magnetic stack with laminated layer |
| 04/15/2010 | US20100090260 Integrated circuit layout pattern for cross-coupled circuits |
| 04/15/2010 | US20100090259 Lateral junction field-effect transistor |
| 04/15/2010 | US20100090258 Semiconductor device |
| 04/15/2010 | US20100090257 Semiconductor device, and its manufacturing method |
| 04/15/2010 | US20100090256 Semiconductor structure with stress regions |
| 04/15/2010 | US20100090255 Electronic component |
| 04/15/2010 | US20100090254 Biosensor and manufacturing method thereof |
| 04/15/2010 | US20100090251 SURFACE TREATMENT AND PASSIVATION OF AIGaN/GaN HEMT |
| 04/15/2010 | US20100090250 Semiconductor device |
| 04/15/2010 | US20100090249 Compound Semiconductor Lamination, Method for Manufacturing the same, and Semiconductor Device |
| 04/15/2010 | US20100090247 Surface treatment method of group iii nitride semiconductor, group iii nitride semiconductor, manufacturing method of the same and group iii nitride semiconductor structure |
| 04/15/2010 | US20100090230 Crystal silicon element and method for fabricating same |
| 04/15/2010 | US20100090228 Boron aluminum nitride diamond heterostructure |
| 04/15/2010 | US20100090227 Method for the formation of a gate oxide on a sic substrate and sic substrates and devices prepared thereby |
| 04/15/2010 | US20100090225 Nitride semiconductor device |
| 04/15/2010 | US20100090224 Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the thin film transistor |
| 04/15/2010 | US20100090223 Semiconductor device and manufacturing method thereof |
| 04/15/2010 | US20100090222 Thin film transistor; method of manufacturing same; and organic light emitting device including the thin film transistor |
| 04/15/2010 | US20100090220 Thin film transistor and semiconductor device using the same |
| 04/15/2010 | US20100090219 Method for fabrication of semiconductor device |
| 04/15/2010 | US20100090218 Sealed device |
| 04/15/2010 | US20100090217 Semiconductor device and manufacturing method thereof |
| 04/15/2010 | US20100090216 ELECTRONIC SEMICONDUCTOR DEVICE BASED ON COPPER NICKEL AND GALLIUM-TIN-ZINC-COPPER-TITANIUM p AND n-TYPE OXIDES, THEIR APPLICATIONS AND CORRESPONDING MANUFACTURE PROCESS |
| 04/15/2010 | US20100090215 Thin film transistor and method for preparing the same |
| 04/15/2010 | US20100090214 Oxide thin film and oxide thin film device |
| 04/15/2010 | US20100090213 One-time programmable devices including chalcogenide material and electronic systems including the same |
| 04/15/2010 | US20100090212 Memory cell |
| 04/15/2010 | US20100090208 Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same |
| 04/15/2010 | US20100090205 Active matrix display apparatus |
| 04/15/2010 | US20100090197 Method of manufacturing semiconductor nanowire sensor device and semiconductor nanowire sensor device manufactured according to the method |
| 04/15/2010 | US20100090196 Optical semiconductor device and manufacturing method of the same |
| 04/15/2010 | US20100090195 Quantum dot optoelectronic devices with enhanced performance |
| 04/15/2010 | US20100090192 Method for controlled formation of the resistive switching material in a resistive switching device and device obtained thereof |
| 04/15/2010 | US20100090189 Nanoscale electrical device |
| 04/15/2010 | US20100090187 Resistive memory device |
| 04/15/2010 | US20100090125 Method for manufacturing a semiconductor device and laser irradiation apparatus |
| 04/15/2010 | US20100089156 Mechanical quantity sensor and method of manufacturing the same |
| 04/15/2010 | DE19756530B4 Verfahren zur Herstellung einer Halbleitereinrichtung A process for producing a semiconductor device |
| 04/15/2010 | DE112008000674T5 Kurzkanal LV, MV und HV CMOS Vorrichtungen Short channel LV, MV and HV CMOS devices |
| 04/15/2010 | DE112006002055B4 Verfahren zur Herstellung eines verspannten MOS-Bauelements A method for producing a stressed MOS device |
| 04/15/2010 | DE112006000148B4 Transistor-Bauteil mit gestuftem Profil im Quellen/Senken-Bereich sowie Verfahren zur Herstellung desselben Of the same transistor device having a stepped profile in the source / drain regions and methods of making |
| 04/15/2010 | DE10346609B4 Verfahren zum Herstellen von Seitenwand-Oxidfilmen an einer Seitenwand einer Gateelektrode in einer Flash-Speicherzelle A method for producing side-wall oxide films on a side wall of a gate electrode in a flash memory cell |
| 04/15/2010 | DE10250575B4 IGBT mit monolithisch integrierter antiparalleler Diode IGBT with monolithic integrated antiparallel diode |
| 04/15/2010 | DE102009043202A1 Eine elektronische Komponente, ein Halbleiterwafer und ein Verfahren zur Herstellung einer elektronischen Komponente An electronic component, a semiconductor wafer and a method of manufacturing an electronic component |
| 04/15/2010 | DE102009041474A1 Aufbauten und Verfahren zum Ausbilden von Trenchfeldeffekttransistoren mit hoher Dichte Structures and methods for forming trench field-effect transistors with a high density |
| 04/15/2010 | DE102009041463A1 Halbleitervorrichtung mit mehreren Halbleitersubstraten und Verfahren zu deren Fertigung A semiconductor device comprising a plurality of semiconductor substrates and methods for their production |
| 04/15/2010 | DE102009035688A1 Halbleiterbauelement mit Trenchgatestruktur und Verfahren zur Herstellung desselben Of the same semiconductor device having a trench gate structure and methods for preparing |
| 04/15/2010 | DE102009026481A1 Halbleitervorrichtung Semiconductor device |
| 04/15/2010 | DE102009021021A1 Bauelement mit verringerter freier Ladungsträger-Lebensdauer Component with a reduced free charge carrier lifetime |
| 04/15/2010 | DE102008044985A1 Verfahren zur Herstellung eines Halbleiterbauelements mit einem kohlenstoffenthaltenden leitenden Material für Durchgangskontakte A process for producing a semiconductor device with a carbon-containing conductive material for vias |
| 04/15/2010 | DE102007030321B4 Halbleiterbauelement mit Gatestruktur und Herstellungsverfahren des Halbleiterbauelements A semiconductor device having gate structure and manufacturing method of the semiconductor component |
| 04/15/2010 | DE102006012416B4 Halbleiterbauelement (FET) mit einem runden Nano-Leitungstransistorkanal A semiconductor device (FET) with a round nano-line transistor channel |
| 04/15/2010 | DE102005026228B4 Transistor vom GAA-Typ und Verfahren zu dessen Herstellung Transistor of the ATM type and process for its preparation |
| 04/15/2010 | DE102005002774B4 Lichtemissionsmodul und Leuchte The light emitting module and lamp |
| 04/15/2010 | DE102004037186B4 Bipolares Halbleiterbauelement mit Kaskodenstruktur und Verfahren zur Herstellung desselben Of the same bipolar semiconductor component with cascode structure and methods for preparing |
| 04/15/2010 | DE102004024344B4 Verfahren zur Herstellung eines Leistungs-Halbleiterbauteils sowie Leistungs-Halbleiterbauteil A method for producing a power semiconductor component and the power semiconductor component |
| 04/14/2010 | EP2175694A1 Method for forming thin film, method for manufacturing organic electroluminescent device, method for manufacturing semiconductor device, and method for manufacturing optical device |
| 04/14/2010 | EP2175495A1 Sealed device |
| 04/14/2010 | EP2175494A2 Compound semiconductor device and manufacturing method of the same |
| 04/14/2010 | EP2175493A1 Field effect transistor and process for production thereof |
| 04/14/2010 | EP2175492A1 Semiconductor device and method for manufacturing the same |
| 04/14/2010 | EP2175488A1 Semiconductor device and method for manufacturing the same |
| 04/14/2010 | EP1275141B1 Electronic device manufacture comprising a thin-film-transistor |
| 04/14/2010 | CN201438466U ultra-fast recovery diode |
| 04/14/2010 | CN201438465U Thin frame triode |
| 04/14/2010 | CN201438464U Thin film transistor with top gate structure |
| 04/14/2010 | CN201438457U Component step-recovery prevention circuit |
| 04/14/2010 | CN1881612B Semiconductor device with trench structure and method for manufacturing same |
| 04/14/2010 | CN1879175B Programming method based on the behaviour of non-volatile memory cenlls |
| 04/14/2010 | CN1847961B Display module with repairable electric performance and its repairing method |
| 04/14/2010 | CN1819273B Electronic device, semiconductor device and manufacturing method thereof |
| 04/14/2010 | CN1745473B Method for producing bit lines for UCP flash memories |
| 04/14/2010 | CN1638545B Organic electroluminescent display device and method of fabricating the same |
| 04/14/2010 | CN1637530B Trans-reflective type liquid crystal display device and method for fabricating the same |
| 04/14/2010 | CN1585107B Method of forming multilayer interconnection structure, and manufacturing method for multilayer wiring boards |
| 04/14/2010 | CN101694851A Grooved gate IGBT with P-type floating layer |
| 04/14/2010 | CN101694850A Carrier-storing grooved gate IGBT with P-type floating layer |
| 04/14/2010 | CN101694847A 半导体装置及显示装置 The semiconductor device and display device |
| 04/14/2010 | CN101694846A SOI-cascaded dual-tube MOS transistor structure |
| 04/14/2010 | CN101694843A Unbalanced design method of high-position current source unit of current rudder-type digital-to-analog converter |
| 04/14/2010 | CN101694842A Power AlGaN/GaN Schottky diode and manufacturing method thereof |
| 04/14/2010 | CN101694840A Power device integrated circuit |
| 04/14/2010 | CN101694833A Composite structure AlGaN/GaN field-effect diode and manufacturing method thereof |