Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2010
04/22/2010US20100096686 Electronic device including trenches and discontinuous storage elements
04/22/2010US20100096685 Strained Semiconductor Device and Method of Making Same
04/22/2010US20100096684 Semiconductor device and its manufacture method
04/22/2010US20100096683 Structure of semiconductor device
04/22/2010US20100096682 Non-volatile semiconductor storage device and method of manufacturing the same
04/22/2010US20100096680 Oc dram cell with increased sense margin
04/22/2010US20100096679 Fet, ferroelectric memory device, and methods of manufacturing the same
04/22/2010US20100096678 Nanostructured barium strontium titanate (bst) thin-film varactors on sapphire
04/22/2010US20100096673 Semiconductor device structure having enhanced performance fet device
04/22/2010US20100096672 Self-aligned, integrated circuit contact
04/22/2010US20100096669 Memory cell array comprising wiggled bit lines
04/22/2010US20100096668 High voltage durability III-Nitride semiconductor device
04/22/2010US20100096667 Semiconductor device
04/22/2010US20100096664 Semiconductor device
04/22/2010US20100096639 Active matrix substrate
04/22/2010US20100096638 Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same
04/22/2010US20100096637 Thin film transistor and manufacturing method thereof
04/22/2010US20100096634 Panel structure, display device including same, and methods of manufacturing panel structure and display device
04/22/2010US20100096631 Thin film transistor and method for manufacturing the same
04/22/2010US20100096630 Bottom-Gate Thin Film Transistor and Method of Fabricating the Same
04/22/2010US20100096628 Multi-layered memory apparatus including oxide thin film transistor
04/22/2010US20100096627 Light-emitting device and method for manufacturing the same
04/22/2010US20100096619 electronic devices using carbon nanotubes having vertical structure and the manufacturing method thereof
04/22/2010US20100096618 Doping of nanostructures
04/22/2010US20100096176 Contact structure of a wires and method manufacturing the same, and thin film transistor substrate including the contact structure and method manufacturing the same
04/22/2010DE112008000776T5 Auf-Chip-Speicherzelle und Verfahren zur Herstellung derselben On-chip memory cell and method for manufacturing the same
04/22/2010DE102009040579A1 Verfahren zum Produzieren von Halbleiter-Bauelementen A method of producing semiconductor devices
04/22/2010DE102009028485A1 Halbleiterbauelementstruktur mit vertikalen Dielektrikumsschichten The semiconductor device structure with vertical dielectric layers
04/22/2010DE102008042859A1 Elektronisches Bauelement Electronic component
04/22/2010DE102007009914B4 Halbleiterbauelement in Form eines Feldeffekttransistors mit einem Zwischenschichtdielektrikumsmaterial mit erhöhter innerer Verspannung und Verfahren zur Herstellung desselben Of the same semiconductor device in the form of a field effect transistor with an interlayer dielectric with increased internal stress and methods for preparing
04/22/2010DE102005019305B4 ESD-Schutzstruktur mit Diodenreihenschaltung und Halbleiterschaltung mit derselben ESD protection structure with diode series circuit and the semiconductor circuit with the same
04/22/2010DE102005011873B4 Verfahren zur Erzeugung einer Zone erhöhter Rekombination, insbesondere verwendbar in Bodygebieten von Leistungstransistoren Method for producing a zone of increased recombination, in particular usable in body regions of power transistors
04/22/2010DE102004063583B4 Nichtflüchtige Speichervorrichtung A non-volatile memory device
04/21/2010EP2178127A1 Device structure and method for manufacturing the same
04/21/2010EP2178126A1 Semiconductor device, method for manufacturing the same and image display
04/21/2010EP2178125A2 Trenched field effect transistor and method of its manufacture
04/21/2010EP2178120A2 Driver circuit, optical print head, and image forming apparatus
04/21/2010EP2178110A1 Semiconductor device, method for manufacturing the same and image display
04/21/2010EP2176886A1 Cascode current sensor for discrete power semiconductor devices
04/21/2010EP2176880A1 Damascene contacts on iii-v cmos devices
04/21/2010EP1504471B1 Layer arrangement and memory arrangement
04/21/2010EP1159761B1 Electronic nanostructure device
04/21/2010EP0968528B1 Method of manufacturing a semiconductor device comprising a field-effect transistor
04/21/2010CN201440419U Novel low-voltage Zener diode structure
04/21/2010CN201440418U 齐纳电压调整二极管 Zener diode voltage regulator
04/21/2010CN201440417U Transient voltage suppressor diode
04/21/2010CN201440416U 快恢复二极管 Fast Recovery Diode
04/21/2010CN1649174B Thin film transistor and method for fabricating the same
04/21/2010CN1645515B Nonvolatile semiconductor memory
04/21/2010CN1574335B Semiconductor power device having a diamond shaped metal interconnect scheme
04/21/2010CN101697357A Schottky barrier diode and preparation method thereof
04/21/2010CN101697356A UMOS transistor capable of modulating on resistance
04/21/2010CN101697355A Evenly-triggered semiconductor silicon-controlled rectifier controller for ESD
04/21/2010CN101697354A Transparent extended p-n heterojunction thin film and preparation method thereof
04/21/2010CN101697352A Multi-point insulated silicon transistor with double ultra sallow isolation structures
04/21/2010CN101697350A Multi-point silicon transistor with double ultra sallow isolation structures
04/21/2010CN101697349A A surface geometry for mos-gated device
04/21/2010CN101697051A Liquid crystal display device and method for forming same
04/21/2010CN101414633B Groove insulated gate type composite gate field plate device with high electron mobility
04/21/2010CN101369607B Flash memory unit structure and preparation thereof
04/21/2010CN101354506B Pixel structure of thin-film transistor LCD device
04/21/2010CN101325215B 绝缘栅双极型晶体管 Insulated gate bipolar transistors
04/21/2010CN101281909B NMOS pipe built-in bidirectional thyristor electrostatic protection device
04/21/2010CN101208778B Laser annealing method and device
04/21/2010CN101183686B Asymmetric multi-gated transistor and method for forming
04/21/2010CN101150134B Storage device for increasing overlapped area between control grid and floating grid and its making method
04/21/2010CN101125482B Structure with through hole, production method thereof, and liquid discharge head
04/21/2010CN101064344B 半导体装置及其制造方法 Semiconductor device and manufacturing method
04/20/2010US7701767 Strap-contact scheme for compact array of memory cells
04/20/2010US7701742 Semiconductor device
04/20/2010US7701541 In-plane switching display device having electrode and pixel electrode in contact with an upper surface of an organic resin film
04/20/2010US7701523 Electro-optical device
04/20/2010US7701428 Integrated displays using nanowire transistors
04/20/2010US7701134 Active matrix display device with improved operating performance
04/20/2010US7701070 Integrated circuit and method of implementing a contact pad in an integrated circuit
04/20/2010US7701068 Multi-chip package
04/20/2010US7701065 Device including a semiconductor chip having a plurality of electrodes
04/20/2010US7701064 Apparatus for improved power distribution in a three dimensional vertical integrated circuit
04/20/2010US7701062 Semiconductor device and method for producing the same
04/20/2010US7701050 Side-view optical diode package and fabricating process thereof
04/20/2010US7701041 Chip-packaging with bonding options having a plurality of package substrates
04/20/2010US7701039 Semiconductor devices and in-process semiconductor devices having conductor filled vias
04/20/2010US7701037 Orientation-independent multi-layer BEOL capacitor
04/20/2010US7701032 Compound semiconductor device
04/20/2010US7701031 Integrated circuit structure and manufacturing method thereof
04/20/2010US7701027 Method and apparatus for reduction of non-adaptive signals in photo-EMF sensors
04/20/2010US7701022 Semiconductor device and method of producing the same
04/20/2010US7701020 Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
04/20/2010US7701019 Tensile strained substrate
04/20/2010US7701018 Semiconductor device and method for manufacturing same
04/20/2010US7701017 MOS semiconductor device and method of fabricating the same
04/20/2010US7701016 Semiconductor device having device characteristics improved by straining surface of active region and its manufacture method
04/20/2010US7701015 Bipolar and CMOS integration with reduced contact height
04/20/2010US7701013 Nanoelectromechanical transistors and methods of forming same
04/20/2010US7701010 Method of fabricating transistor including buried insulating layer and transistor fabricated using the same
04/20/2010US7701009 Source follower circuit or bootstrap circuit, driver circuit comprising such circuit, and display device comprising such driver circuit
04/20/2010US7701008 Doping of semiconductor fin devices
04/20/2010US7701006 Method of producing a low-voltage power supply in a power integrated circuit
04/20/2010US7701005 Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristics
04/20/2010US7701004 Semiconductor device and method of manufacturing thereof