Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2010
05/12/2010EP2184769A2 Method for preparing a layer comprising a nickel monosilicide NiSi on a substrate containing silicon
05/12/2010EP2183832A1 Low capacitance semiconductor device
05/12/2010EP2183782A1 Methods and devices for fabricating tri-layer beams
05/12/2010EP2183781A1 Method for forming gate structures
05/12/2010EP2183780A1 Thin film transistors using thin film semiconductor materials
05/12/2010EP2183773A1 Improved buried isolation layer
05/12/2010EP2050140B1 Method of manufacturing a double gate transistor
05/12/2010EP1759420B1 Semiconductor on insulator semiconductor device and method of manufacture
05/12/2010EP1749310B1 Substrate for electronic application comprising a flexible support and method for production thereof
05/12/2010EP0956597B1 Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
05/12/2010DE10359493B4 Integrationsverfahren für eine Halbleitervorrichtung mit einer vertieften Gate-Elektrode Integration process for a semiconductor device with a recessed gate electrode
05/12/2010DE102008051403A1 Thyristor arrangement has semiconductor body, where p-dopped emitter and n-dopped basis are arranged in vertical direction between back side and front side
05/12/2010DE102008051245A1 Hochvolttransistor mit hoher Stromtragfähigkeit und Verfahren zur Herstellung High-voltage transistor having a high current-carrying capacity and process for preparing
05/12/2010DE102008026182B4 Verfahren zur Herstellung eines Mikrostrukturbauelements mit einem kompressiv verspannten Material mit kleinem ε und Halbleiterbauelement bzw. MOS-Transistor A process for producing a microstructure device having a compressively stressed material with small ε and semiconductor device or MOS transistor
05/12/2010DE102005061294B4 NPT-Halbleiterbauelement in der Form eines MOSFETs oder IGBTs NPT semiconductor device in the form of MOSFETs or IGBTs
05/12/2010DE102005025951B4 Verfahren zum Herstellen einer Mehrschicht-Gatestapelstruktur mit einer Metallschicht und Gatestapelstruktur für eine FET-Vorrichtung A method of manufacturing a multilayer gate stack structure with a metal layer and gate stack structure for a FET device
05/12/2010DE102004006520B4 Verfahren zur Herstellung einer DRAM-Speicherzellenanordnung mit Trenchkondensatoren und Stegfeldeffekttransistoren (FinFET) sowie DRAM-Speicherzellenanordnung A method of manufacturing a DRAM memory cell array with trench capacitors and fin field-effect transistors (FinFET) and DRAM memory cell arrangement
05/12/2010CN201466031U Table type rectification chip capable of preventing high voltage discharge
05/12/2010CN201466028U Grid array diode
05/12/2010CN201466027U Integrated circuit stacked capacitor
05/12/2010CN201466010U Full-automatic diode gilling machine
05/12/2010CN1987620B Liquid crystal display and its compensating feed through voltage method
05/12/2010CN1979857B Circuit device having capacitor and field effect transistor, and display apparatus therewith
05/12/2010CN1971917B Non-volatile memory devices having floating gates and related methods of forming the same
05/12/2010CN1968017B Device and method for driving voltage driven type switching element
05/12/2010CN1957475B Enhancing strained device performance by use of multi narrow section layout
05/12/2010CN1953203B High-breakdown voltage semiconductor switching device and switched mode power supply apparatus using the same
05/12/2010CN1938860B Semiconductor device and semiconductor device manufacturing method
05/12/2010CN1938825B Semiconductor device and method for fabricating the same
05/12/2010CN1937078B Multi-operation mode nonvolatile memory
05/12/2010CN1929151B Thin film transistor and method of manufacturing the same, semiconductor device and display
05/12/2010CN1909244B Semiconductor device and manufacturing method thereof
05/12/2010CN1906529B Display device manufacturing method and display device
05/12/2010CN1897305B Vertical channel semiconductor devices and methods of manufacturing the same
05/12/2010CN1893118B Thin film transistor
05/12/2010CN1893116B Thin film transistor plate and method of fabricating the same
05/12/2010CN1881592B Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices
05/12/2010CN1877877B Nitride semiconductor substrate and method of producing same
05/12/2010CN1877861B Semiconductor device and use thereof
05/12/2010CN1866539B Integrated circuit element and forming method thereof
05/12/2010CN1855544B Semicondcutor with mask electrode and method
05/12/2010CN1855543B Power semiconductor device having improved performance and method
05/12/2010CN1832202B Memory cell, flash memory array and operating method of the same
05/12/2010CN1822395B Semiconductor device, driver circuit and manufacturing method of semiconductor device
05/12/2010CN1822350B Method of manufacturing thin film transistor
05/12/2010CN1817027B Apparatus and method for enhancing dynamic range of charge coupled device-based spectrograph
05/12/2010CN1806318B Multi-step chemical mechanical polishing of a gate area in a finfet
05/12/2010CN1790674B Capacitor with zirconium oxide and method for fabricating the same
05/12/2010CN1790116B Transflective liquid crystal display and manufacturing method thereof
05/12/2010CN1759468B Semiconductor substrate, field-effect transistor, and their production methods
05/12/2010CN1755943B Display device provided with semiconductor element and manufacturing method thereof
05/12/2010CN1755938B Nanometric structure and corresponding manufacturing method
05/12/2010CN1684246B Low noise and high performance circuit and manufacturing method thereof
05/12/2010CN1655038B Semiconductor device and method for fabricating the same
05/12/2010CN1652351B Method for manufacturing semiconductor device with film transistor
05/12/2010CN1610138B Group-III-element nitride crystal semiconductor device
05/12/2010CN1610062B Alloy type semiconductor nanocrystals and method for preparing the same
05/12/2010CN1595641B 半导体装置及其制造方法 Semiconductor device and manufacturing method
05/12/2010CN1586013B A mask for crystallizing polysilicon and a method for forming thin film transistor using the mask
05/12/2010CN1573490B 液晶显示器 LCD Monitor
05/12/2010CN1551685B Color display device
05/12/2010CN1550838B Liquid crystal displays, manufacturing methods and a driving method thereof
05/12/2010CN1476090B Bipolar transistor used on chip for electrostatic discharging protection and its method
05/12/2010CN101707275A High-temperature superconductive delay line
05/12/2010CN101707214A Semiconductor device
05/12/2010CN101707213A Memory and preparation method thereof
05/12/2010CN101707212A Semiconductor device and method of manufacturing the
05/12/2010CN101707211A Pixel thin film transistor structure
05/12/2010CN101707210A Anti-radiation field effect transistor, CMOS integrated circuit and preparation thereof
05/12/2010CN101707209A Lateral diffusion metal oxide semiconductor transistor structure
05/12/2010CN101707208A Multi-field plate LDMOS device and processing method thereof
05/12/2010CN101707207A Silicon controlled device adopting glass passivation protection between gate pole and negative pole and manufacturing method thereof
05/12/2010CN101707206A Transverse PNP type dynatron
05/12/2010CN101707205A Transverse power transistor with inclined surface drift region
05/12/2010CN101707200A Split grid type flash memory for sharing word line
05/12/2010CN101707196A Improved electrostatic discharge protective device, corresponding method and integrated circuit
05/12/2010CN101707190A Method for making metal gate stacks and ic having metal gate stacks
05/12/2010CN101706831A Circuit tolerance measure method in field of semiconductor design simulation
05/12/2010CN101208810B III nitride white light LED
05/12/2010CN101197283B P type MOS transistor and method for forming same
05/12/2010CN101114675B Multi-channel thin-film transistor structure
05/12/2010CN101034669B Film transistor and method for fabricating the same
05/12/2010CN101009327B Semiconductor part and its making method
05/12/2010CN101005098B Substrate base for mechanics magnitude sensor
05/11/2010US7715162 Optically triggered electro-static discharge protection circuit
05/11/2010US7714975 Liquid crystal display device and manfacturing method thereof
05/11/2010US7714950 Peeling method and method for manufacturing display device using the peeling method
05/11/2010US7714820 Contact structure of conductive films and thin film transistor array panel including the same
05/11/2010US7714633 Limiter and semiconductor device using the same
05/11/2010US7714453 Interconnect structure and formation for package stacking of molded plastic area array package
05/11/2010US7714450 On-die bond wires system and method for enhancing routability of a redistribution layer
05/11/2010US7714448 Semiconductor device and method for manufacturing semiconductor device
05/11/2010US7714446 Single mask via method and device
05/11/2010US7714442 Solid-state imaging device and method for making the same
05/11/2010US7714441 Barrier layer configurations and methods for processing microelectronic topographies having barrier layers
05/11/2010US7714438 Bistable molecular mechanical devices with a band gap change activated by an electrical field for electronic switching, gating, and memory applications
05/11/2010US7714412 MOS varactor using isolation well
05/11/2010US7714411 Electro-optical device, method of manufacturing the same, and electronic apparatus
05/11/2010US7714408 Semiconductor device and manufacturing method thereof
05/11/2010US7714407 Semiconductor device and method of forming a semiconductor device
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