Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2010
04/27/2010US7705389 Thickened sidewall dielectric for memory cell
04/27/2010US7705385 Selective deposition of germanium spacers on nitride
04/27/2010US7705384 Non-volatile storage element and manufacturing method thereof
04/27/2010US7705382 Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
04/27/2010US7705379 Field effect transistor and solid state image pickup device
04/27/2010US7705377 Field effect transistor comprising compound semiconductor
04/27/2010US7705375 Solid state imaging device
04/27/2010US7705373 Solid state image pickup device and manufacturing method therefor
04/27/2010US7705372 Electromechanical memory devices and methods of manufacturing the same
04/27/2010US7705371 Field effect transistor having reduced contact resistance and method for fabricating the same
04/27/2010US7705369 High-voltage diode with optimized turn-off method and corresponding optimization method
04/27/2010US7705368 Insulated gate type thyristor
04/27/2010US7705367 Pinned photodiode sensor with gate-controlled silicon-controlled rectifier transfer switch and method of formation
04/27/2010US7705366 LED package having lead frames
04/27/2010US7705362 Silicon carbide devices with hybrid well regions
04/27/2010US7705360 Array substrate for display device and method of manufacturing the same
04/27/2010US7705359 Electronic device, thin film transistor structure and flat panel display having the same
04/27/2010US7705357 Thin film transistor with channel region in recess
04/27/2010US7705356 Electronic device, thin film transistor structure and flat panel display having the same
04/27/2010US7705355 Thin-film transistor display devices having composite electrodes
04/27/2010US7705354 Semiconductor device and method for fabricating the same
04/27/2010US7705350 Fractional biasing of semiconductors
04/27/2010US7705349 Test inserts and interconnects with electrostatic discharge structures
04/27/2010US7705348 Semiconductor light-emitting device with electrode for N-polar InGaAIN surface
04/27/2010US7705345 High performance strained silicon FinFETs device and method for forming same
04/27/2010US7705341 Phase change memory device using PNP-BJT for preventing change in phase change layer composition and widening bit line sensing margin
04/27/2010US7704892 Semiconductor device having local interconnection layer and etch stopper pattern for preventing leakage of current
04/27/2010US7704864 Method of manufacturing a superjunction device with conventional terminations
04/27/2010US7704859 Electro-optical apparatus, electronic apparatus, and method of manufacturing electro-optical apparatus
04/27/2010US7704855 Method for fabricating strained silicon-on-insulator structures and strained silicon-on-insulator structures formed thereby
04/27/2010US7704853 Method for the elimination of the effects of defects on wafers
04/27/2010US7704841 Transistor structure and method for making same
04/27/2010US7704836 Method of fabricating super trench MOSFET including buried source electrode
04/27/2010US7704833 Method of forming abrupt source drain metal gate transistors
04/27/2010US7704831 Semiconductor memory device with bit line of small resistance and manufacturing method thereof
04/27/2010US7704825 Method of fabricating memory including diode
04/27/2010US7704824 Semiconductor layer
04/27/2010US7704812 Semiconductor circuit and method of fabricating the same
04/27/2010US7704808 Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts
04/27/2010US7704807 Multi-channel type thin film transistor and method of fabricating the same
04/27/2010US7704797 Module and method of manufacturing the same
04/27/2010US7704794 Method of forming a semiconductor device
04/27/2010US7704786 Printed organic logic circuits using a floating gate transistor as a load device
04/27/2010US7704784 Semiconductor devices having regions of induced high and low conductivity, and methods of making the same
04/27/2010US7704775 CCD type solid-state imaging apparatus and manufacturing method for the same
04/27/2010US7704768 Method of fabricating liquid crystal display
04/27/2010US7704767 Manufacturing method of electro line for liquid crystal display device
04/27/2010US7704763 Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface
04/27/2010US7704762 Lamp and method of producing a lamp
04/27/2010US7704681 Manufacturing method for pixel structure
04/27/2010US7704331 Growing a planar, semi-polar nitride film on a on a miscut spinel; the film is grown parallel to the substrate's surface; reducing polarization effects in wurtzite-structure III-nitride device structures; metal organic chemical vapor deposition
04/27/2010US7703945 Efficient emitting LED package and method for efficiently emitting light
04/22/2010WO2010044478A1 Light-emitting display device
04/22/2010WO2010044431A1 Semiconductor device and manufacturing method therefor
04/22/2010WO2010044430A1 Semiconductor device
04/22/2010WO2010044341A1 Semiconductor device and manufacturing method thereof
04/22/2010WO2010044332A1 Thin-film transistor and method of manufacturing same
04/22/2010WO2010044315A1 Through electrode substrate, method for manufacturing the through electrode substrate, and semiconductor device using the through electrode substrate
04/22/2010WO2010044226A1 Semiconductor device and method for manufacturing same
04/22/2010WO2010044135A1 Power device
04/22/2010WO2009157754A3 Electromagnetic induced field effect transistor (emifet)
04/22/2010WO2009154391A3 Method for manufacturing a power semiconductor device
04/22/2010WO2009151769A3 System and method for routing connections with improved interconnect thickness
04/22/2010US20100097854 Flash memory and flash memory array
04/22/2010US20100097853 Jeet memory cell
04/22/2010US20100097846 Magnetoresistive element and magnetic memory
04/22/2010US20100097135 Tunnel field effect transistor
04/22/2010US20100097105 Semiconductor device and method for driving the same
04/22/2010US20100096761 Semiconductor substrate for build-up packages
04/22/2010US20100096755 Wiring structure and method for fabricating the same
04/22/2010US20100096733 Process for fabricating a substrate comprising a deposited buried oxide layer
04/22/2010US20100096727 Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy
04/22/2010US20100096726 Metal capacitor and method of making the same
04/22/2010US20100096721 Semiconductor device production method and semiconductor device
04/22/2010US20100096720 Soi substrate and method for manufacturing the same
04/22/2010US20100096719 Methods of forming fine patterns in integrated circuit devices
04/22/2010US20100096716 Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy
04/22/2010US20100096715 Magnetic random access memory
04/22/2010US20100096714 Method of manufacturing mems sensor and mems sensor
04/22/2010US20100096713 Mems package and packaging method thereof
04/22/2010US20100096712 Hermetic sealing and electrical contacting of a microelectromechanical structure, and microsystem (mems) produced therewith
04/22/2010US20100096711 Microelectromechanical system microphone package
04/22/2010US20100096709 Uncooled ir detector arrays based on nanoelectromechanical systems
04/22/2010US20100096707 Method for Forming Insulation Film
04/22/2010US20100096706 Semiconductor transistors having high-k gate dielectric layers, metal gate electrode regions, and low fringing capacitances
04/22/2010US20100096705 Implantation method for reducing threshold voltage for high-k metal gate device
04/22/2010US20100096701 Semiconductor Device and Method of Manufacturing the Same
04/22/2010US20100096700 Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate
04/22/2010US20100096699 Prevention of plasma induced damage arising from etching of crack stop trenches in multi-layered low-k semiconductor devices
04/22/2010US20100096698 Stress enhanced transistor
04/22/2010US20100096697 High voltage device having reduced on-state resistance
04/22/2010US20100096696 Semiconductor device including field effect transistor for use as a high-speed switching device and a power device
04/22/2010US20100096694 Planar extended drain transistor and method of producing the same
04/22/2010US20100096693 Semiconductor device with vertical gate and method for fabricating the same
04/22/2010US20100096692 Semiconductor device
04/22/2010US20100096691 Semiconductor device having vertically aligned pillar structures that have flat side surfaces and method for manufacturing the same
04/22/2010US20100096690 Semiconductor device with increased channel area
04/22/2010US20100096689 Non-volatile memory device including nitrogen pocket implants and methods for making the same
04/22/2010US20100096688 Non-volatile memory having charge trap layer with compositional gradient
04/22/2010US20100096687 Non-volatile memory having silicon nitride charge trap layer
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