Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2010
04/20/2010US7701003 Semiconductor device and manufacturing method thereof
04/20/2010US7701002 Semiconductor device having buried gate electrode and method of fabricating the same
04/20/2010US7701001 Short channel trench power MOSFET with low threshold voltage
04/20/2010US7701000 Semiconductor device and method of manufacturing the semiconductor device
04/20/2010US7700998 Semiconductor device and method for manufacturing the same
04/20/2010US7700996 Tunable antifuse elements
04/20/2010US7700995 Semiconductor device and display device
04/20/2010US7700994 Single poly CMOS logic memory cell for RFID application and its programming and erasing method
04/20/2010US7700992 Semiconductor device
04/20/2010US7700991 Two bit memory structure and method of making the same
04/20/2010US7700988 Metal-insulator-metal capacitor
04/20/2010US7700986 Chip package carrier and fabrication method thereof
04/20/2010US7700985 Ferroelectric memory using multiferroics
04/20/2010US7700984 Semiconductor device including memory cell
04/20/2010US7700983 Transistor, memory cell, memory cell array and method of forming a memory cell array
04/20/2010US7700982 Magnetoresistive effect element and magnetic memory device
04/20/2010US7700981 Integration of capacitive elements in the form of perovskite ceramic
04/20/2010US7700979 Semiconductor device having bulb-shaped recess gate and method for fabricating the same
04/20/2010US7700975 Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors
04/20/2010US7700974 Process for fabricating ultra-low contact resistances in GaN-based devices
04/20/2010US7700973 GaN/AlGaN/GaN dispersion-free high electron mobility transistors
04/20/2010US7700972 Semiconductor device
04/20/2010US7700971 Insulated gate silicon carbide semiconductor device
04/20/2010US7700970 Integrated power device having a start-up structure
04/20/2010US7700969 Type II interband heterostructure backward diodes
04/20/2010US7700961 Semiconductor light emitting device and method for manufacturing the same
04/20/2010US7700959 Semiconductor light-emitting device, semiconductor light-emitting apparatus, and method of manufacturing semiconductor light-emitting device
04/20/2010US7700955 Semiconductor device and optical apparatus
04/20/2010US7700954 Transistor, method of fabricating the same and organic light emitting display including the transistor
04/20/2010US7700953 Light-emitting device using nano size needle
04/20/2010US7700952 Contact pad for thin film transistor substrate and liquid crystal display
04/20/2010US7700951 Method and structure for forming strained Si for CMOS devices
04/20/2010US7700950 Image sensor with compact pixel layout
04/20/2010US7700948 Thin film transistor array panel with common bars of different widths
04/20/2010US7700947 Semiconductor device
04/20/2010US7700941 Surface-emitting semiconductor laser comprising a structured waveguide
04/20/2010US7700939 Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
04/20/2010US7700938 Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
04/20/2010US7700934 Electric device with nanowires comprising a phase change material
04/20/2010US7700495 Thin film transistor device and method of manufacturing the same, and liquid crystal display device
04/20/2010US7700459 Method for producing electronic device and electronic device
04/20/2010US7700453 Method for forming hyper-abrupt junction varactors
04/20/2010US7700452 Strained channel transistor
04/20/2010US7700440 Method of manufacturing a metal-oxide-semiconductor with reduced on-resistance
04/20/2010US7700436 Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture
04/20/2010US7700432 Method of fabricating a vertical transistor and capacitor
04/20/2010US7700425 Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plug
04/20/2010US7700421 Semiconductor device and method for manufacturing the same
04/20/2010US7700418 Method for production of thin-film semiconductor device
04/20/2010US7700407 Method of forming a bump-on-lead flip chip interconnection having higher escape routing density
04/20/2010US7700404 Large die package structures and fabrication method therefor
04/20/2010US7700380 Surface contamination analyzer for semiconductor wafers, method used therein and process for fabricating semiconductor device
04/20/2010US7700203 used for coating epitaxial films in the fabrication of electronic and opto-electronic devices such as laser diodes, light emitting diodes, transistors and detectors
04/20/2010US7699421 Liquid ejecting apparatus
04/15/2010WO2010042479A2 Enhancement-mode nitride transistor
04/15/2010WO2010042323A1 Electron blocking layers for electronic devices
04/15/2010WO2010042239A2 Pin diode with improved power limiting
04/15/2010WO2010041740A1 Semiconductor device manufacturing method
04/15/2010WO2010041686A1 Thin-film transistor and display device
04/15/2010WO2010041633A1 Method of simulation and simulation device
04/15/2010WO2010041446A1 Vacuum processing apparatus
04/15/2010WO2010040967A1 Method for making side growth semiconductor nanowires and transistors obtained by said method
04/15/2010WO2010020546A4 Dual metal gate corner
04/15/2010WO2010005760A3 Increasing yield in ofets by using a high-k dielectric layer in a dual dielectric layer
04/15/2010WO2010003395A3 Triple-gate or multi-gate component based on the tunneling effect
04/15/2010US20100093158 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
04/15/2010US20100091577 Memory cell storage node length
04/15/2010US20100091574 One-transistor composite-gate memory
04/15/2010US20100091564 Magnetic stack having reduced switching current
04/15/2010US20100091563 Magnetic memory with phonon glass electron crystal material
04/15/2010US20100091555 Magnetoresistive effect element and magnetic random access memory
04/15/2010US20100090760 Low-distortion voltage variable capacitor assemblies
04/15/2010US20100090759 Quantum interference transistors and methods of manufacturing and operating the same
04/15/2010US20100090668 Stacked Field Effect Transistor Configurations
04/15/2010US20100090320 Structure and method for device-specific fill for improved anneal uniformity
04/15/2010US20100090314 Final polishing method for silicon single crystal wafer and silicon single crystal wafer
04/15/2010US20100090313 III-V Compound Crystal and Semiconductor Electronic Circuit Element
04/15/2010US20100090312 Nitride semiconductor structure and method for manufacturing the same
04/15/2010US20100090311 Growth of low dislocation density group-III nitrides and related thin-film structures
04/15/2010US20100090310 Bipolar transistor and method for fabricating the same
04/15/2010US20100090309 Capacitors, Dielectric Structures, And Methods Of Forming Dielectric Structures
04/15/2010US20100090308 Metal-oxide-metal capacitors with bar vias
04/15/2010US20100090307 Manufacturing method of semiconductor device and semiconductor device
04/15/2010US20100090303 Soi substrate and method for producing the same, solid-state image pickup device and method for producing the same, and image pickup apparatus
04/15/2010US20100090301 Magnetic stack with oxide to reduce switching current
04/15/2010US20100090300 Mram cells including coupled free ferromagnetic layers for stabilization
04/15/2010US20100090299 Flexible electronics for pressure device and fabrication method thereof
04/15/2010US20100090298 Mems diaphragm
04/15/2010US20100090297 Pressure sensor and method for manufacturing the pressure sensor
04/15/2010US20100090296 Wafer assembly comprising mems wafer with polymerized siloxane attachment surface
04/15/2010US20100090295 Folded lead-frame packages for MEMS devices
04/15/2010US20100090294 Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressure
04/15/2010US20100090293 Self-aligned nano field-effect transistor and its fabrication
04/15/2010US20100090292 Semiconductor device and method of manufacturing same
04/15/2010US20100090291 Transistor structure having reduced input capacitance
04/15/2010US20100090290 Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the same
04/15/2010US20100090288 Method of forming source and drain of a field-effect-transistor and structure thereof
04/15/2010US20100090287 Electronic device with a gate electrode having at least two portions
04/15/2010US20100090284 Metal-oxide-semiconductor device
04/15/2010US20100090281 Field Effect Transistor with Metal-Semiconductor Junction