Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2010
05/06/2010US20100109105 Component and method for its manufacture
05/06/2010US20100109104 Pressure sensor and wire guide assembly
05/06/2010US20100109103 Mems package
05/06/2010US20100109102 Method and structure for forming a gyroscope and accelerometer
05/06/2010US20100109101 Method of Positioning Catalyst Nanoparticle and Nanowire-Based Device Employing Same
05/06/2010US20100109100 Micro-fluidic structure
05/06/2010US20100109099 Semiconductor device and manufacturing method thereof
05/06/2010US20100109098 Gate structure including modified high-k gate dielectric and metal gate interface
05/06/2010US20100109097 Integrated circuit system employing an elevated drain
05/06/2010US20100109092 Monolithically integrated circuit
05/06/2010US20100109087 Multichannel Metal Oxide Semiconductor (MOS) Transistors
05/06/2010US20100109086 Method of Fabricating A Fin Field Effect Transistor (FinFET) Device
05/06/2010US20100109085 Memory device design
05/06/2010US20100109084 Semiconductor Device and Method for Fabricating the Same
05/06/2010US20100109082 Method of manufacturing a semiconductor device and a semiconductor device
05/06/2010US20100109080 Pseudo-drain mos transistor
05/06/2010US20100109079 Vertical type semiconductor device
05/06/2010US20100109078 Semiconductor device and method of forming a semiconductor device
05/06/2010US20100109077 High-voltage vertical transistor with a multi-gradient drain doping profile
05/06/2010US20100109076 Structures for electrostatic discharge protection
05/06/2010US20100109075 Semiconductor device having an expanded storage node contact and method for fabricating the same
05/06/2010US20100109074 Gate structure, semiconductor memory device having the gate structure and methods of fabricating the same
05/06/2010US20100109073 Flash memory device and method for manufacturing the same
05/06/2010US20100109071 Semiconductor memory device
05/06/2010US20100109070 Fabricating method of mirror bit memory device having split ono film with top oxide film formed by oxidation process
05/06/2010US20100109069 Nonvolatile semiconductor storage device and method of manufacture thereof
05/06/2010US20100109068 Lanthanide dielectric with controlled interfaces
05/06/2010US20100109067 SiH4 soak for low hydrogen SiN deposition to improve flash memory device performance
05/06/2010US20100109066 Common drain non-volatile multiple-time programmable memory
05/06/2010US20100109064 Semiconductor device and manufacturing method thereof
05/06/2010US20100109059 Semiconductor device and a method of manufacturing the same, and solid-state image pickup device using the same
05/06/2010US20100109058 Conductive oxynitride and method for manufacturing conductive oxynitride film
05/06/2010US20100109057 Fin field effect transistor and method of fabricating the same
05/06/2010US20100109056 Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods
05/06/2010US20100109055 MOS transistors having optimized channel plane orientation, semiconductor devices including the same, and methods of fabricating the same
05/06/2010US20100109054 Pattern formation in semiconductor fabrication
05/06/2010US20100109052 Semiconductor device and manufacturing method thereof
05/06/2010US20100109051 High voltage gan transistors
05/06/2010US20100109050 Field effect transistor with independently biased gates
05/06/2010US20100109049 Patterned strained semiconductor substrate and device
05/06/2010US20100109048 Method and structure for forming strained si for cmos devices
05/06/2010US20100109047 Multijunction rare earth solar cell
05/06/2010US20100109046 Methods of forming low interface resistance contacts and structures formed thereby
05/06/2010US20100109045 Integrated circuit system employing stress-engineered layers
05/06/2010US20100109044 Optimized Compressive SiGe Channel PMOS Transistor with Engineered Ge Profile and Optimized Silicon Cap Layer
05/06/2010US20100109043 Methods and structures for electrostatic discharge protection
05/06/2010US20100109019 Forming method of gallium nitride system compound semiconductor layer, transfer method of the same, and substrate structure with the same bonded thereto
05/06/2010US20100109018 Method of fabricating semi-insulating gallium nitride using an aluminum gallium nitride blocking layer
05/06/2010US20100109017 GaN-BASED COMPOUND SEMICONDUCTOR DEVICE
05/06/2010US20100109016 Power semiconductor module
05/06/2010US20100109015 Gallium nitride semiconductor device and method for producing the same
05/06/2010US20100109014 Display device and manufacturing method thereof
05/06/2010US20100109013 Thin film transistor, method of manufacturing the same, and organic light emitting diode display device including the same
05/06/2010US20100109012 Stress transfer enhancement in transistors by a late gate re-crystallization
05/06/2010US20100109011 Thin film transistor array panel and method of manufacturing the same
05/06/2010US20100109004 Thin film transistor substrate and display device
05/06/2010US20100109003 Semiconductor device and method for manufacturing the same
05/06/2010US20100109002 Oxynitride semiconductor
05/06/2010US20100108999 Process for preparing an electronic device
05/06/2010US20100108996 Composition for organic thin film transistor, organic thin film transistor formed by using the same, and method for forming the organic film transistor
05/06/2010US20100108988 Nanotube-Based Structure and Method of Forming the Structure
05/06/2010US20100108987 Semiconductor device and method of manufacturing the same
05/06/2010US20100108986 Method for the production of quantum dots embedded in a matrix, and quantum dots embedded in a matrix produced using the method
05/06/2010US20100108983 Photocathode semiconductor device
05/06/2010US20100108132 Nano-devices and methods of manufacture thereof
05/06/2010US20100107764 Acceleration sensor
05/06/2010DE19930779B4 Mikromechanisches Bauelement Micromechanical component
05/06/2010DE112004002107B4 Verfahren zur Herstellung eines MOSFET mit selbstjustiertem Damaszener-Gate A method for producing a MOSFET with self-aligned damascene gate
05/06/2010DE112004000146B4 Verfahren zur Herstellung eines MOSFET-Bauelements mit zugspannungsverformtem Substrat A process for producing a MOSFET device with zugspannungsverformtem substrate
05/06/2010DE10361635B4 Verfahren zur Herstellung eines Abstandselements für ein Leitungselement durch anwenden einer Ätzstoppschicht, die durch eine stark richtungsgebundene Abscheidetechnik aufgebracht wird und Transistor mit Abstandselement A process for producing a spacer for a line element by applying an etch stop layer is applied by a highly directional deposition and transistor with spacer
05/06/2010DE10312149B4 SRAM-Zelle auf SOI-Substrat und Herstellungsverfahren SRAM cell on an SOI substrate and manufacturing processes
05/06/2010DE102008049717A1 Transistor mit einem Metallgatestapel mit großem ε und einem kompressiv verspannten Kanal Transistor with a metal gate stack with large ε and a compressively stressed channel
05/06/2010DE102005046133B4 Herstellungsverfahren für einen RCAT-Transistor und entsprechender RCAT-Transistor Manufacturing method for a RCAT transistor and corresponding RCAT transistor
05/06/2010DE102004063139B4 Verfahren zur Herstellung einer Split-Gate-Flash-Speichereinrichtung A process for producing a split-gate flash memory device
05/06/2010DE102004030345B4 Mehrmulden-Bauelement und Herstellungsverfahren More wells device and manufacturing method
05/05/2010EP2182606A2 An input surge protection device using JFET
05/05/2010EP2182505A1 Plasma display apparatus
05/05/2010EP2181465A2 Thermoelectric generator
05/05/2010EP1730786B1 Enhancing strained device performance by use of multi narrow section layout
05/05/2010EP1611616B1 Bipolar transistor
05/05/2010EP1601020B1 Semiconductor device
05/05/2010CN201450007U Bidirectional trigger diode chip
05/05/2010CN1961436B Method of fabricating an optoelectronic device having a bulk heterojunction
05/05/2010CN1938321B Novel compound and organic electronic device using such compound
05/05/2010CN1922737B Multi-state memory cell with asymmetric charge trapping
05/05/2010CN1922734B Low crosstalk substrate for mixed-signal integrated circuits
05/05/2010CN1922123B Polyacene compound and organic semiconductor thin film
05/05/2010CN1890814B III-nitride device passivation and method
05/05/2010CN1873496B In-plane-switching liquid crystal displayer and method
05/05/2010CN1813354B Method for making semiconductor device including band-engineered superlattice
05/05/2010CN1758126B Liquid crystal display and thin film transistor array panel
05/05/2010CN1740886B Active matrix substrate and method of manufacturing the same, electro-optical device, and electronic apparatus
05/05/2010CN1739014B Semiconductor pressure sensor and process for fabricating the same
05/05/2010CN1725911B Flat panel display and protection device therefor
05/05/2010CN1723545B Semiconductor device and method for fabricating thin strain relaxation buffer layer
05/05/2010CN1716634B Semiconductor device
05/05/2010CN1697575B Organic light emitting display device and its manufacturing method
05/05/2010CN1695237B Semiconductor device processing
05/05/2010CN1658718B Method of fabricating organic light emitting display
05/05/2010CN1653601B Method for making EEPROM structure with ultra small thin windows
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