Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2010
05/04/2010US7709287 Method of forming a multijunction solar cell structure with a GaAs/AIGaAs tunnel diode
05/04/2010US7709280 Semiconductor laser with narrow beam divergence
05/04/2010US7709279 Methods for testing semiconductor devices methods for protecting the same from electrostatic discharge events during testing, and methods for fabricating inserts for use in testing semiconductor devices
05/04/2010US7709277 PAA-based etchant, methods of using same, and resultant structures
05/04/2010CA2400768C Semiconductor optoelectronic device with electrically adjustable transfer function
04/2010
04/29/2010WO2010047346A1 Underlayer film for image formation
04/29/2010WO2010047331A1 Iii nitride semiconductor electronic device, method for manufacturing iii nitride semiconductor electronic device, and iii nitride semiconductor epitaxial wafer
04/29/2010WO2010047326A1 Method for manufacturing thin film transistor and thin film transistor
04/29/2010WO2010047288A1 Method for manufacturing semiconductordevice
04/29/2010WO2010047281A1 Bipolar transistor
04/29/2010WO2010047280A1 Bipolar transistor
04/29/2010WO2010047267A1 Igbt and igbt manufacturing method
04/29/2010WO2010047222A1 Electrode, semiconductor device, and method for manufacturing the semiconductor device
04/29/2010WO2010047217A1 Semiconductor device and method for manufacturing the same
04/29/2010WO2010047105A1 Sputtering target for forming thin film transistor wiring film
04/29/2010WO2010047086A1 Semiconductor device, method for manufacturing same, and display device
04/29/2010WO2010047077A1 Thin film transistor and method for manufacturing same
04/29/2010WO2010047063A1 Thin film transistor having high-purity crystalline indium oxide semiconductor film, and method for manufacturing the thin film transistor
04/29/2010WO2010047040A1 Thin-film transistor having high adhesive strength between barrier film and drain electrode and source electrode films
04/29/2010WO2010047030A1 Nitride semiconductor device
04/29/2010WO2010047016A1 Bidirectional switch
04/29/2010WO2010047013A1 Semiconductor device and method for manufacturing same
04/29/2010WO2010046997A1 Electronic device and method for manufacturing the same
04/29/2010WO2010046922A2 Nonvolatile floating gate analog memory cell
04/29/2010WO2010046881A2 Semiconductor device manufacturing method
04/29/2010WO2010046873A1 Multi-transistor memory cell
04/29/2010WO2010046795A1 Semiconductor device and method of manufacturing such a device
04/29/2010WO2010046794A1 Semiconductor device and method of manufacturing such a device
04/29/2010WO2010046449A1 Bipolar transistor with an n-type base and method of production
04/29/2010WO2010023608A3 Low cost mos transistor for rf applications
04/29/2010WO2010014974A3 Phase transition devices and smart capacitive devices
04/29/2010US20100105215 Method of modifying insulating film
04/29/2010US20100105180 Semiconductor integrated circuit device having improved punch-through resistance and production method thereof, semiconductor integrated circuit device including a low-voltage transistor and high-voltage transistor
04/29/2010US20100105178 Method of manufacturing a flash memeory device
04/29/2010US20100105176 Thin Film Transistor Array Panel Used For Liquid Crystal Display And A Manufacturing Method Thereof
04/29/2010US20100105163 Method for manufacturing semiconductor device
04/29/2010US20100105162 Method for manufacturing semiconductor device
04/29/2010US20100103741 Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell
04/29/2010US20100103727 St-ram employing a magnetic resonant tunneling diode as a spacer layer
04/29/2010US20100103570 Circuit and Method for Power Clamp Triggered Dual SCR ESD Protection
04/29/2010US20100102433 Apparatus for use in semiconductor wafer processing for laterally displacing individual semiconductor devices away from one another
04/29/2010US20100102420 Semiconductor device and method for manufacturing the same
04/29/2010US20100102419 Epitaxy-Level Packaging (ELP) System
04/29/2010US20100102418 Bipolar device having improved capacitance
04/29/2010US20100102417 Vapor deposition method for ternary compounds
04/29/2010US20100102414 Semiconductor device
04/29/2010US20100102408 Electron tube
04/29/2010US20100102407 Magnetoresistive element and method of manufacturing the same
04/29/2010US20100102406 Magnetic stack design
04/29/2010US20100102404 Magnetic Tunnel Junction and Method of Fabrication
04/29/2010US20100102403 Method and apparatus for fabricating piezoresistive polysilicon by low-temperature metal induced crystallization
04/29/2010US20100102402 Method of fabricating a transistor with semiconductor gate combined locally with a metal
04/29/2010US20100102401 Semiconductor transistor having a stressed channel
04/29/2010US20100102400 Low-k isolation spacers for conductive regions
04/29/2010US20100102399 Methods of Forming Field Effect Transistors and Devices Formed Thereby
04/29/2010US20100102397 Transistor, semiconductor device including a transistor and methods of manufacturing the same
04/29/2010US20100102396 Semiconductor device and manufacturing method thereof
04/29/2010US20100102391 Split-gate ESD diodes with elevated voltage tolerance
04/29/2010US20100102390 Gated diode with increased voltage tolerance
04/29/2010US20100102389 Finfet with two independent gates and method for fabricating the same
04/29/2010US20100102388 LDMOS Transistor Having Elevated Field Oxide Bumps And Method Of Making Same
04/29/2010US20100102387 Semicoductor device
04/29/2010US20100102386 Lateral double-diffused metal oxide semiconductor (LDMOS) transistors
04/29/2010US20100102385 Semiconductor Devices Including Transistors Having Recessed Channels
04/29/2010US20100102384 Metal oxide semiconductor (mos) transistors having a recessed gate electrode
04/29/2010US20100102383 Semiconductor device
04/29/2010US20100102382 Trench gate type transistor and method of manufacturing the same
04/29/2010US20100102381 Power semiconductor device
04/29/2010US20100102380 Method of producing precision vertical and horizontal layers in a vertical semiconductor structure
04/29/2010US20100102378 Non-Volatile Memory Device
04/29/2010US20100102377 Nonvolatile semiconductor memory device and method of fabricating the same
04/29/2010US20100102376 Atomic Layer Deposition Processes for Non-Volatile Memory Devices
04/29/2010US20100102375 Semiconductor device and manufacturing method thereof
04/29/2010US20100102369 Ferroelectric memory with magnetoelectric element
04/29/2010US20100102365 Semiconductor device
04/29/2010US20100102364 Method for Providing a Self-Aligned Conductive Structure
04/29/2010US20100102361 Vertical transistor and fabricating method thereof and vertical transistor array
04/29/2010US20100102360 Method for producing group III nitride semiconductor and template substrate
04/29/2010US20100102359 novel fabrication technique for high frequency, high power group iii nitride electronic devices
04/29/2010US20100102358 Single voltage supply pseudomorphic high electron mobility transistor (phemt) power device and process for manufacturing the same
04/29/2010US20100102357 Nitride semiconductor device
04/29/2010US20100102356 Semiconductor transistor having a stressed channel
04/29/2010US20100102332 Method of forming an ohmic contact on a p-type 4h-sic substrate
04/29/2010US20100102331 Ohmic electrode for sic semiconductor, method of manufacturing ohmic electrode for sic semiconductor, semiconductor device, and method of manufacturing semiconductor device
04/29/2010US20100102330 Nitride semiconductor device having oxygen-doped n-type gallium nitride freestanding single crystal substrate
04/29/2010US20100102328 Nitride semiconductor substrate
04/29/2010US20100102327 Semiconductor device and passive component integration in a semiconductor package
04/29/2010US20100102325 Vacuum channel transistor and diode emitting thermal cathode electrons, and method of manufacturing the vacuum channel transistor
04/29/2010US20100102324 Switching element and manufacturing method thereof
04/29/2010US20100102323 Directionally Annealed Silicon Film Having a (100)-Normal Crystallographical Orientation
04/29/2010US20100102321 Radiation-sensitive composition, method of forming silica-based coating film, silica-based coating film, apparatus and member having silica-based coating film and photosensitizing agent for insulating film
04/29/2010US20100102319 Spin injection device having semiconductor-ferromagnetic-semiconductor structure and spin transistor
04/29/2010US20100102315 Method for manufacturing semiconductor device
04/29/2010US20100102314 Semiconductor device and method for manufacturing the same
04/29/2010US20100102313 Semiconductor device and method for manufacturing the same
04/29/2010US20100102312 Oxide semiconductor, thin film transistor, and display device
04/29/2010US20100102311 Oxide semiconductor, thin film transistor, and display device
04/29/2010US20100102309 ZNO-Based Semiconductor Element
04/29/2010US20100102308 Programmable resistive memory cell with oxide layer
04/29/2010US20100102307 Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
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