| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/14/2010 | CN101777585A Junction field effect transistor and manufacturing method thereof |
| 07/14/2010 | CN101777584A P-channel laterally double diffused metal oxide semiconductor device |
| 07/14/2010 | CN101777583A Graphene field effect transistor |
| 07/14/2010 | CN101777582A LDMOS device capable of improving grid oxygen reliability and manufacture method thereof |
| 07/14/2010 | CN101777581A P-type super-junction laterally double diffused metal oxide semiconductor |
| 07/14/2010 | CN101777580A Tunneling field-effect transistor and manufacturing method thereof |
| 07/14/2010 | CN101777579A Electrostatic protection element of isolated silicon-controlled rectifier |
| 07/14/2010 | CN101777578A Structure and manufacturing method of lateral bipolar transistor |
| 07/14/2010 | CN101777564A SOI CMO device with vertical grid structure |
| 07/14/2010 | CN101777563A Nonvolatile storage unit |
| 07/14/2010 | CN101777557A Semiconductor circuit structure and manufacturing method thereof |
| 07/14/2010 | CN101777556A Trench large-power MOS part and manufacturing method thereof |
| 07/14/2010 | CN101777555A Complementary silicon controlled rectifier (SCR) structure triggered with aid of N-channel metal oxide semiconductor (NMOS) field effect transistor |
| 07/14/2010 | CN101777554A Electrostatic protection element of bidirectional silicon-controlled rectifier |
| 07/14/2010 | CN101777544A P-type silicon carbide device and method for improving ohmic contact performance thereof |
| 07/14/2010 | CN101777514A Trench semiconductor power device and preparation method thereof |
| 07/14/2010 | CN101777500A Power MOS tube and manufacturing method thereof |
| 07/14/2010 | CN101777498A Method for forming epitaxial wafer with superficial epitaxial layer and epitaxial wafer thereof |
| 07/14/2010 | CN101777139A Multiple-valued counter unit based on nerve MOS tube and multi-digit multiple-valued counter |
| 07/14/2010 | CN101521224B Double trigger silicon controlled rectifier |
| 07/14/2010 | CN101431104B Double-edge anti-integral dose radiation reinforced layout structure |
| 07/14/2010 | CN101383328B Passivation film of composite semiconductor silicon device and passivation generating process |
| 07/14/2010 | CN101375400B Shielded gate trench (sgt) mosfet devices and manufacturing processes |
| 07/14/2010 | CN101330098B Multi-sectorization shallow junction low-temperature semiconductor structure with differ doping concentration and high disruptive voltage as well as manufacturing method thereof |
| 07/14/2010 | CN101273461B Switching element |
| 07/14/2010 | CN101221967B CMOS image sensor and method for manufacturing the same |
| 07/14/2010 | CN101211976B CMOS image sensor and method of manufacturing thereof |
| 07/14/2010 | CN101211975B Semiconductor device having EDMOS transistor and method for manufacturing the same |
| 07/13/2010 | US7757200 Structure of an apparatus for programming an electronically programmable semiconductor fuse |
| 07/13/2010 | US7756505 Semiconductor integrated circuit and a software radio device |
| 07/13/2010 | US7755204 Stacked die module including multiple adhesives that cure at different temperatures |
| 07/13/2010 | US7755203 Circuit substrate and semiconductor device |
| 07/13/2010 | US7755202 Semiconductor device and method of fabricating the same |
| 07/13/2010 | US7755194 Tantalum/graded tantalum nitride barrier layer is formed in Cu interconnects for improved adhesion, electromigration resistance and reliability; high speed integrated circuits in semiconductor devices |
| 07/13/2010 | US7755192 Copper interconnection structure, barrier layer including carbon and hydrogen |
| 07/13/2010 | US7755182 Hybrid integrated circuit device, and method for fabricating the same, and electronic device |
| 07/13/2010 | US7755177 Carrier structure of SoC with custom interface |
| 07/13/2010 | US7755174 Integrated electronic components and methods of formation thereof |
| 07/13/2010 | US7755173 Series-shunt switch with thermal terminal |
| 07/13/2010 | US7755172 Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth |
| 07/13/2010 | US7755171 Transistor structure with recessed source/drain and buried etch stop layer and related method |
| 07/13/2010 | US7755170 Semiconductor device and semiconductor package having the same |
| 07/13/2010 | US7755168 Semiconductor device provided with floating electrode |
| 07/13/2010 | US7755166 Package substrate with built-in capacitor and manufacturing method thereof |
| 07/13/2010 | US7755165 iTFC with optimized C(T) |
| 07/13/2010 | US7755163 Antifuse element and semiconductor device including same |
| 07/13/2010 | US7755162 Anti-fuse memory cell |
| 07/13/2010 | US7755161 Semiconductor devices |
| 07/13/2010 | US7755159 DUV laser annealing and stabilization of SiCOH films |
| 07/13/2010 | US7755152 Semiconductor component configured as a diaphragm sensor |
| 07/13/2010 | US7755151 Wafer level package for surface acoustic wave device and fabrication method thereof |
| 07/13/2010 | US7755149 Photo mask and semiconductor device fabricated using the same |
| 07/13/2010 | US7755146 Formation of standard voltage threshold and low voltage threshold MOSFET devices |
| 07/13/2010 | US7755141 Complementary MISFET formed in a linear body |
| 07/13/2010 | US7755139 Power device with high switching speed and manufacturing method thereof |
| 07/13/2010 | US7755138 Semiconductor device |
| 07/13/2010 | US7755137 Bandgap engineered MOS-gated power transistors |
| 07/13/2010 | US7755136 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 07/13/2010 | US7755135 EEPROM having single gate structure |
| 07/13/2010 | US7755133 Semiconductor integrated circuit device and related fabrication method |
| 07/13/2010 | US7755132 Nonvolatile memories with shaped floating gates |
| 07/13/2010 | US7755131 NAND-type non-volatile semiconductor memory device and method of manufacturing the same |
| 07/13/2010 | US7755130 Minority carrier sink for a memory cell array comprising nonvolatile semiconductor memory cells |
| 07/13/2010 | US7755129 Systems and methods for memory structure comprising a PPROM and an embedded flash memory |
| 07/13/2010 | US7755128 Semiconductor device containing crystallographically stabilized doped hafnium zirconium based materials |
| 07/13/2010 | US7755127 Capacitor in semiconductor device and method of manufacturing the same |
| 07/13/2010 | US7755126 Memory device configured to have transistor and capacitor |
| 07/13/2010 | US7755125 Semiconductor device including ferroelectric capacitor |
| 07/13/2010 | US7755124 Tantalum/titanium/tungsten/molybdenum nitride layers; electrodeposition; dynamic random access memory; electrical resistance; magnetic resistance |
| 07/13/2010 | US7755122 Complementary metal oxide semiconductor image sensor |
| 07/13/2010 | US7755115 Field effect transistor using carbon nanotube of two or more walls having the outer walls at the gate and source/drain regions removed |
| 07/13/2010 | US7755114 Semiconductor device and manufacturing method thereof |
| 07/13/2010 | US7755113 Semiconductor device, semiconductor display device, and manufacturing method of semiconductor device |
| 07/13/2010 | US7755112 Field effect transistor with air bridge |
| 07/13/2010 | US7755109 Bonded semiconductor substrate |
| 07/13/2010 | US7755108 Nitride-based semiconductor device |
| 07/13/2010 | US7755105 Capacitor-less memory |
| 07/13/2010 | US7755104 FinFET pMOS double gate semiconductor device with uniaxial tensile strain applied to channel by shrinkable gate electrode material, current flow in <110> crystal orientation, and source and drain Schottky contacts with channel and manufacturing method thereof |
| 07/13/2010 | US7755102 High breakdown voltage diode and method of forming same |
| 07/13/2010 | US7755100 Packaging apparatus of terahertz device |
| 07/13/2010 | US7755096 Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate |
| 07/13/2010 | US7755095 Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device |
| 07/13/2010 | US7755093 Semiconductor storage device and method of manufacturing the same |
| 07/13/2010 | US7755092 Thin film transistor liquid crystal display |
| 07/13/2010 | US7755090 Solid state image pickup device and method of producing solid state image pickup device |
| 07/13/2010 | US7755088 Liquid crystal display |
| 07/13/2010 | US7755085 Semiconductor device and method for fabricating same |
| 07/13/2010 | US7755082 Forming self-aligned nano-electrodes |
| 07/13/2010 | US7755080 Method for forming quantum dot, and quantum semiconductor device and method for fabricating the same |
| 07/13/2010 | US7755074 Low area contact phase-change memory |
| 07/13/2010 | US7754621 yttrium source material and zirconium source material are alternately used as metal source materials so as to form a yttrium-stabilized zirconium oxide (YSZ) thin film on a substrate by atomic layer deposition |
| 07/13/2010 | US7754603 Multi-functional chalcogenide electronic devices having gain |
| 07/13/2010 | US7754578 Process for manufacturing a wafer by annealing of buried channels |
| 07/13/2010 | US7754560 Integrated circuit using FinFETs and having a static random access memory (SRAM) |
| 07/13/2010 | US7754556 Reducing transistor junction capacitance by recessing drain and source regions |
| 07/13/2010 | US7754550 Process for forming thick oxides on Si or SiC for semiconductor devices |
| 07/13/2010 | US7754549 Method of manufacturing thin film transistor array panel |
| 07/13/2010 | US7754521 Dual panel type organic electroluminescent device |
| 07/13/2010 | CA2659479C Self-aligned nanotube field effect transistor and method of fabricating same |
| 07/08/2010 | WO2010078204A2 Quantum well mosfet channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains |