Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2012
09/07/2012WO2012119125A2 High performance graphene transistors and fabrication processes thereof
09/07/2012WO2012119053A1 Cylindrical-shaped nanotube field effect transistor
09/07/2012WO2012118899A2 Offset electrode tft structure
09/07/2012WO2012118898A2 Isolating segmented radiation detectors using alumina
09/07/2012WO2012118719A2 Multilayer-interconnection first integration scheme for graphene and carbon nanotube transistor based integration
09/07/2012WO2012118614A2 Gated bipolar junction transistors, memory arrays, and methods of forming gated bipolar junction transistors
09/07/2012WO2012118568A2 Silicon nanotube mosfet
09/07/2012WO2012118566A1 Semiconductor device having high performance channel
09/07/2012WO2012118538A2 System and method for phase error reduction in quantum systems
09/07/2012WO2012118174A1 Organic field-effect transistor and organic semiconductor material
09/07/2012WO2012118128A1 Polymer and organic thin film and organic thin film element using same
09/07/2012WO2012118039A1 Al alloy film for display devices or semiconductor devices, display device or semiconductor device equipped with al alloy film, and sputtering target
09/07/2012WO2012118023A1 Method for producing graphene, graphene produced on substrate, and graphene on substrate
09/07/2012WO2012117972A1 Thin-film transistor, method for manufacturing same, and display device
09/07/2012WO2012117936A1 Thin-film transistor and method for manufacturing same, and display device
09/07/2012WO2012117778A1 Method of manufacturing semiconductor device, and semiconductor device
09/07/2012WO2012117745A1 Semiconductor substrate and method of producing same
09/07/2012WO2012117718A1 Thin-film semiconductor device and manufacturing method therefor
09/07/2012WO2012117695A1 Semiconductor device and process of producing same, and display device
09/07/2012WO2012117675A1 Boost pfc control device
09/07/2012WO2012117439A1 Thin-film semiconductor device and manufacturing method therefor
09/07/2012WO2012116566A1 Thyristor for controlling two types of charge carriers
09/07/2012WO2012116529A1 Tunneling device and method for forming the same
09/07/2012WO2012116528A1 Tunneling field effect transistor and method for forming the same
09/07/2012WO2012116522A1 Low power consumption tunneling field-effect transistor with finger-shape gate structure
09/07/2012WO2012094780A8 Soi lateral mosfet device and integrated circuit thereof
09/07/2012WO2012094357A3 Transistor including multiple reentrant profiles
09/07/2012WO2012087581A3 Transistors with high concentration of boron doped germanium
09/07/2012WO2012082329A3 Tunnel field effect transistor
09/07/2012WO2012076231A3 Generator device for supplying voltage to a motor vehicle
09/07/2012CA2828333A1 Multilayer-interconnection first integration scheme for graphene and carbon nanotube transistor based integration
09/07/2012CA2813440A1 System and method for phase error reduction in quantum systems
09/06/2012US20120225296 Uniform multilayer graphene by chemical vapor deposition
09/06/2012US20120224438 Semiconductor memory device
09/06/2012US20120224424 Nonvolatile memory device, method for fabricating the same, and method for operating the same
09/06/2012US20120224416 Magnetic memory and magnetic memory apparatus
09/06/2012US20120223771 Temperature compensation and coarse tune bank switches in a low phase noise vco
09/06/2012US20120223726 MEMS Sensor with Movable Z-Axis Sensing Element
09/06/2012US20120223421 Double trench rectifier
09/06/2012US20120223420 Semiconductor body with a buried material layer
09/06/2012US20120223419 Method for controlling the distribution of stresses in a semiconductor-on-insulator type structure and corresponding structure
09/06/2012US20120223417 Group iii nitride crystal substrate, epilayer-containing group iii nitride crystal substrate, semiconductor device and method of manufacturing the same
09/06/2012US20120223416 Thin-film semiconductor component with protection diode structure and method for producing a thin-film semiconductor component
09/06/2012US20120223415 IGBT Power Semiconductor Package Having a Conductive Clip
09/06/2012US20120223414 Methods for increasing bottom electrode performance in carbon-based memory devices
09/06/2012US20120223413 Semiconductor structure having a capacitor and metal wiring integrated in a same dielectric layer
09/06/2012US20120223412 Semiconductor Device Comprising a Capacitor Formed in the Metallization System Based on Dummy Metal Features
09/06/2012US20120223411 Striped on-chip inductor
09/06/2012US20120223410 Region-divided substrate, semiconductor device having region-divided substrate, and method for manufacturing the same
09/06/2012US20120223408 Semiconductor device and fabrication method thereof
09/06/2012US20120223407 Superior Integrity of High-K Metal Gate Stacks by Capping STI Regions
09/06/2012US20120223406 Semiconductor device
09/06/2012US20120223402 Capacitive semiconductor pressure sensor
09/06/2012US20120223401 Cavity process etch undercut monitor
09/06/2012US20120223400 Infrared sensor design using an epoxy film as an infrared absorption layer
09/06/2012US20120223399 Semiconductor device with isolation trench liner
09/06/2012US20120223398 Method for manufacturing contact and semiconductor device having said contact
09/06/2012US20120223397 Metal gate structure and manufacturing method thereof
09/06/2012US20120223393 Semiconductor device
09/06/2012US20120223390 Tunneling field effect transistor and method for forming the same
09/06/2012US20120223387 Tunneling device and method for forming the same
09/06/2012US20120223386 Asymmetric FinFET devices
09/06/2012US20120223385 Electronic systems, thin film transistors, methods of manufacturing thin film transistors and thin film transistor arrays
09/06/2012US20120223384 High voltage device and manufacturing method thereof
09/06/2012US20120223383 Semiconductor structure and fabrication method thereof
09/06/2012US20120223382 Non-volatile memory device and method for fabricating the same
09/06/2012US20120223381 Non-volatile memory structure and method for manufacturing the same
09/06/2012US20120223380 Dense arrays and charge storage devices
09/06/2012US20120223378 Floating Gate Semiconductor Memory Device and Method for Producing Such a Device
09/06/2012US20120223377 Semiconductor memory device including multi-layer gate structure
09/06/2012US20120223374 Semiconductor device
09/06/2012US20120223373 Semiconductor device including a crystal semiconductor layer, its fabrication and its operation
09/06/2012US20120223372 Two-step silicide formation
09/06/2012US20120223370 Biochemical sensor and method of manufacturing the same
09/06/2012US20120223369 Gated Bipolar Junction Transistors, Memory Arrays, and Methods of Forming Gated Bipolar Junction Transistors
09/06/2012US20120223367 Method For Fabricating Semiconductor Wafers For The Integration of Silicon Components With Hemts, And Appropriate Semiconductor Layer Arrangement
09/06/2012US20120223366 High voltage gan transistor
09/06/2012US20120223365 III-Nitride Semiconductor Structures with Strain Absorbing Interlayer Transition Modules
09/06/2012US20120223364 Transistors and methods of manufacturing the same
09/06/2012US20120223363 Transistor with an embedded strain-inducing material having a gradually shaped configuration
09/06/2012US20120223361 Low-power consumption tunneling field-effect transistor with finger-shaped gate structure
09/06/2012US20120223340 Vertical junction field effect transistors having sloped sidewalls and methods of making
09/06/2012US20120223339 Semiconductor device
09/06/2012US20120223338 Semiconductor device and method of manufacturing the same
09/06/2012US20120223337 Nitride semiconductor diode
09/06/2012US20120223336 Semiconductor device
09/06/2012US20120223335 METHOD OF MARKING SiC SEMICONDUCTOR WAFER AND SiC SEMICONDUCTOR WAFER
09/06/2012US20120223334 Doped diamond led devices and associated methods
09/06/2012US20120223333 Semiconductor rectifier device
09/06/2012US20120223332 Semiconductor rectifying device
09/06/2012US20120223331 Semiconductor device and method for forming the same
09/06/2012US20120223330 Semiconductor device having high performance channel
09/06/2012US20120223329 Production Method of a Layered Body
09/06/2012US20120223328 Group iii nitride epitaxial laminate substrate
09/06/2012US20120223327 Programmable Gate III-Nitride Semiconductor Device
09/06/2012US20120223323 Wafer, crystal growth method, and semiconductor device
09/06/2012US20120223322 III-Nitride Transistor Stacked with Diode in a Package
09/06/2012US20120223321 III-Nitride Transistor Stacked with FET in a Package
09/06/2012US20120223320 Electrode configurations for semiconductor devices
09/06/2012US20120223319 Semiconductor diodes with low reverse bias currents
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