Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2012
11/08/2012US20120280291 Semiconductor device including gate openings
11/08/2012US20120280290 Local interconnect structure self-aligned to gate structure
11/08/2012US20120280289 Method of Increasing the Germanium Concentration in a Silicon-Germanium Layer and Semiconductor Device Comprising Same
11/08/2012US20120280288 Inversion thickness reduction in high-k gate stacks formed by replacement gate processes
11/08/2012US20120280287 Integrated Circuit Layouts with Power Rails under Bottom Metal Layer
11/08/2012US20120280281 Gallium nitride or other group iii/v-based schottky diodes with improved operating characteristics
11/08/2012US20120280280 Semiconductor device and fabrication method thereof
11/08/2012US20120280279 Field Effect Transistor Device with Shaped Conduction Channel
11/08/2012US20120280278 Normally-Off High Electron Mobility Transistors
11/08/2012US20120280277 Short channel transistor with reduced length variation by using amorphous electrode material during implantation
11/08/2012US20120280276 Single Crystal Ge On Si
11/08/2012US20120280275 Semiconductor wafer, electronic device, and method for producing semiconductor wafer
11/08/2012US20120280274 Semiconductor structure and method for forming the same
11/08/2012US20120280273 Methods and substrates for laser annealing
11/08/2012US20120280272 Punch-through semiconductor device and method for producing same
11/08/2012US20120280271 Semiconductor device and electronic device
11/08/2012US20120280270 Field Effect Transistor Devices with Low Source Resistance
11/08/2012US20120280255 Semiconductor device and fabrication method thereof
11/08/2012US20120280254 Sic epitaxial wafer and method for manufacturing same
11/08/2012US20120280253 Stress Regulated Semiconductor Devices and Associated Methods
11/08/2012US20120280252 Field Effect Transistor Devices with Low Source Resistance
11/08/2012US20120280251 Cavity-free interface between extension regions and embedded silicon-carbon alloy source/drain regions
11/08/2012US20120280250 Spacer as hard mask scheme for in-situ doping in cmos finfets
11/08/2012US20120280249 Methods for improving the quality of structures comprising semiconductor materials
11/08/2012US20120280247 High Voltage Cascoded III-Nitride Rectifier Package Utilizing Clips on Package Support Surface
11/08/2012US20120280245 High Voltage Cascoded III-Nitride Rectifier Package with Stamped Leadframe
11/08/2012US20120280244 High Electron Mobility Transistors And Methods Of Manufacturing The Same
11/08/2012US20120280243 Semiconductor substrate and fabricating method thereof
11/08/2012US20120280242 Semiconductor film and photoelectric conversion device
11/08/2012US20120280241 Thin film transistor substrate and display device
11/08/2012US20120280240 Liquid crystal display device having first, second, and third transparent electrodes wherein a second region of the second electrode protrudes from a first region
11/08/2012US20120280235 Thin film fet device and method for forming the same
11/08/2012US20120280234 Semiconductor device
11/08/2012US20120280233 Nitride-based heterostructure field effect transistor having high efficiency
11/08/2012US20120280230 Semiconductor device and manufacturing method the same
11/08/2012US20120280229 Flexible semiconductor device, method for manufacturing the same and image display device
11/08/2012US20120280228 Metal oxide field effect transistors on a mechanically flexible polymer substrate having a die-lectric that can be processed from solution at low temperatures
11/08/2012US20120280227 Oxide semiconductor device and method of manufacturing the same
11/08/2012US20120280225 Semiconductor device, memory device, and method for manufacturing the semiconductor device
11/08/2012US20120280224 Metal oxide structures, devices, and fabrication methods
11/08/2012US20120280223 Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices and display devices having oxide semiconductor devices
11/08/2012US20120280213 Method of Fabricating Thin Film Transistor and Top-gate Type Thin Film Transistor
11/08/2012US20120280211 A p-FET with a Strained Nanowire Channel and Embedded SiGe Source and Drain Stressors
11/08/2012US20120280210 Vertical tunneling negative differential resistance devices
11/08/2012US20120280208 Quantum dot channel (qdc) quantum dot gate transistors, memories and other devices
11/08/2012US20120280205 Contacts for Nanowire Field Effect Transistors
11/08/2012US20120280204 Directionally etched nanowire field effect transistors
11/08/2012US20120280202 Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
11/08/2012DE112010002895B4 Verfahren und Struktur zur Bildung leistungsstarker FETs mit eingebetteten Stressoren Method and structure for the formation of high-performance FETs with embedded stressors
11/08/2012DE112010000709T5 Ohmsche Elektrode und Verfahren zur Bildung derselben Ohmic electrode and method of forming same
11/08/2012DE10335118B4 Halbleitervorrichtung Semiconductor device
11/08/2012DE102012207370A1 Selbstsperrender HEMT Self-locking HEMT
11/08/2012DE102007008568B4 Halbleitervorrichtung mit IGBT und Diode A semiconductor device with IGBT and diode
11/08/2012DE102004007197B4 Hochsperrendes Halbleiterbauelement mit niedriger Durchlassspannung High-locking semiconductor device with low forward voltage
11/08/2012DE102004006989B4 Halbleitervorrichtung in Druckkontaktbauweise A semiconductor device in pressure contact design
11/08/2012CA2843407A1 Spin torque mram using bidirectional magnonic writing
11/07/2012EP2521180A1 Active matrix substrate and method for manufacturing same
11/07/2012EP2521177A1 Sos substrate with reduced stress
11/07/2012EP2521162A1 Method for producing semiconductor nanocrystals oriented in a pre-defined direction
11/07/2012EP2521161A1 Method for producing semiconductor nanocrystals
11/07/2012EP2521135A1 Thermal annealing of dielectric in charge trapping flash memory
11/07/2012EP2519976A2 Field-effect transistor device having a metal gate stack with an oxygen barrier layer
11/07/2012EP2519975A2 Self-aligned contacts
11/07/2012EP2519974A2 Germanium-based quantum well devices
11/07/2012EP2519969A1 Semiconductor device
11/07/2012EP2519968A2 Multi-gate iii-v quantum well structures
11/07/2012CN202523718U Structure of thin film transistor
11/07/2012CN202523717U High-voltage switching device
11/07/2012CN202523716U Lanthanide oxide gate oxide shallow trench structure
11/07/2012CN202523715U High-density slowly varying field limiting ring structure
11/07/2012CN1866541B Field effect transistor and method for manufacturing same
11/07/2012CN102770979A Organic semiconductor material, field-effect transistor, and manufacturing method therefor
11/07/2012CN102770961A Method for manufacturing semiconductor device
11/07/2012CN102770960A Semiconductor device and manufacturing method therefor
11/07/2012CN102770959A Joined nanostructures and methods therefor
11/07/2012CN102770949A 碳化硅半导体器件 Silicon carbide semiconductor device
11/07/2012CN102770948A Methods of making transistor including reentrant profile
11/07/2012CN102770947A Super-high density power trench MOSFET
11/07/2012CN102770770A Physical quantity sensor
11/07/2012CN102770743A 压力传感器 Pressure sensors
11/07/2012CN102770577A In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor element
11/07/2012CN102770410A Novel azomethine oligomer
11/07/2012CN102770367A Method for manufacturing a nanowire structure
11/07/2012CN102769441A Internal-matching high-frequency large power transistor
11/07/2012CN102769043A Schottky diode and manufacturing method thereof
11/07/2012CN102769042A Schottky diode and manufacturing method thereof
11/07/2012CN102769041A Silicon controlled rectifier structure for ESD (electro-static discharge) protection
11/07/2012CN102769040A Thin-film transistor, array substrate, array substrate manufacturing method and display device
11/07/2012CN102769039A Thin film transistor, manufacturing method thereof, array substrate and display device
11/07/2012CN102769038A Latch-up resisting N-type SOI laterally diffused metal oxide semiconductor
11/07/2012CN102769037A Reduced surface field structure and lateral diffused metal oxide semiconductor device
11/07/2012CN102769036A Semiconductor structure and manufacturing method and operating method of semiconductor structure
11/07/2012CN102769035A Semiconductor device with trench super junction MOS (metal oxide semiconductor) structure and manufacturing method thereof
11/07/2012CN102769034A Normally-off high electron mobility transistors
11/07/2012CN102769033A HEMT (high electron mobility transistor) with high breakdown voltage and manufacturing method of HEMT
11/07/2012CN102769032A Nitride read only memory (NROM) structure device with low operating voltage
11/07/2012CN102769031A Silicon oxide nitride oxide semiconductor (SONOS) structure device with low operating voltage
11/07/2012CN102769030A Semiconductor device and method of manufacturing same
11/07/2012CN102769029A Device having a gate stack
11/07/2012CN102769028A Semiconductor structure and manufacturing method thereof
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