Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2012
10/31/2012CN101432886B An soi transistor having a reduced body potential and a method of forming the same
10/31/2012CN101378075B LDMOS, and semicondutor device integrating with LDMOS and CMOS
10/31/2012CN101290910B Semiconductor element and its manufacture method
10/30/2012US8300835 Audio signal processing apparatus, audio signal processing method, audio signal processing program, and computer-readable recording medium
10/30/2012US8300456 Magnetic random access memory and method of manufacturing the same
10/30/2012US8300201 Semiconductor device and a method of manufacturing the same
10/30/2012US8299632 Routing layer for mitigating stress in a semiconductor die
10/30/2012US8299631 Semiconductor element and display device provided with the same
10/30/2012US8299630 Microstructure with reactive bonding
10/30/2012US8299629 Wafer-bump structure
10/30/2012US8299624 Semiconductor device, circuit substrate, and electronic device
10/30/2012US8299621 Semiconductor device having wiring layer with a wide wiring and fine wirings
10/30/2012US8299620 Semiconductor device with welded leads and method of manufacturing the same
10/30/2012US8299619 Semiconductor device having a multilayer interconnection structure
10/30/2012US8299617 Method and apparatus for forming metal-metal oxide etch stop/barrier for integrated circuit interconnects
10/30/2012US8299616 T-shaped post for semiconductor devices
10/30/2012US8299613 Method for connecting two joining surfaces
10/30/2012US8299593 Stack package made of chip scale packages
10/30/2012US8299592 Cube semiconductor package composed of a plurality of stacked together and interconnected semiconductor chip modules
10/30/2012US8299591 Semiconductor package and stacked semiconductor package having the same
10/30/2012US8299585 Power semiconductor device
10/30/2012US8299582 Substrate for semiconductor package and semiconductor package having the same
10/30/2012US8299579 Method for generating a signal representative of the current delivered to a load by a power device and relative power device
10/30/2012US8299578 High voltage bipolar transistor with bias shield
10/30/2012US8299577 Fringe capacitor using bootstrapped non-metal layer
10/30/2012US8299576 Circuit with high-density capacitors using bootstrapped non-metal layer
10/30/2012US8299575 High-density capacitor configured on a semiconductor
10/30/2012US8299574 Semiconductor constructions
10/30/2012US8299569 Semiconductor device and method of cutting electrical fuse
10/30/2012US8299567 Structure of metal e-fuse
10/30/2012US8299565 Semiconductor nanowires having mobility-optimized orientations
10/30/2012US8299559 Re-configurable mixed-mode integrated circuit architecture
10/30/2012US8299558 Self-aligned Schottky diode
10/30/2012US8299552 Magnetoresistive element and magnetic memory
10/30/2012US8299549 Layer structure for electrical contacting of semiconductor components
10/30/2012US8299548 Method for manufacturing semiconductor device and semiconductor device
10/30/2012US8299545 Method and structure to improve body effect and junction capacitance
10/30/2012US8299543 Method of manufacturing semiconductor device having plural transistors formed in well region and semiconductor device
10/30/2012US8299540 High performance MOSFET
10/30/2012US8299535 Delta monolayer dopants epitaxy for embedded source/drain silicide
10/30/2012US8299534 FET with replacement gate structure and method of fabricating the same
10/30/2012US8299528 Transistor and method thereof
10/30/2012US8299527 Vertical LDMOS device and method for fabricating same
10/30/2012US8299526 Integrated circuit utilizing trench-type power MOS transistor
10/30/2012US8299525 Power IC device and method for manufacturing same
10/30/2012US8299524 Semiconductor device with voltage sustaining region formed along a trench
10/30/2012US8299523 Semiconductor device
10/30/2012US8299522 Semiconductor device
10/30/2012US8299521 Nonvolatile memory device and method of fabricating the same
10/30/2012US8299520 Semiconductor devices including auxiliary gate electrodes and methods of fabricating the same
10/30/2012US8299518 Semiconductor device and bypass capacitor module
10/30/2012US8299515 Method of forming deep trench capacitor
10/30/2012US8299514 High density integrated circuitry for semiconductor memory having memory cells with a minimum capable photolithographic feature dimension
10/30/2012US8299509 Asymmetric source/drain junctions for low power silicon on insulator devices
10/30/2012US8299508 CMOS structure with multiple spacers
10/30/2012US8299507 Semiconductor device
10/30/2012US8299506 Integration of MEMS and CMOS devices on a chip
10/30/2012US8299502 Semiconductor heterostructures and manufacturing therof
10/30/2012US8299500 Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region
10/30/2012US8299499 Field effect transistor
10/30/2012US8299498 Semiconductor device having hetero junction
10/30/2012US8299496 Semiconductor device having semiconductor substrate including diode region and IGBT region
10/30/2012US8299495 Reverse conducting IGBT
10/30/2012US8299494 Nanotube semiconductor devices
10/30/2012US8299489 Illumination device
10/30/2012US8299484 Optoelectronic semiconductor chip
10/30/2012US8299477 Light emitting device and method for fabricating the same
10/30/2012US8299476 Light emitting diode having light emitting cell with different size and light emitting device thereof
10/30/2012US8299475 Interlevel conductive light shield
10/30/2012US8299474 Light emitting device package and light unit having the same
10/30/2012US8299472 Active pixel sensor with nanowire structured photodetectors
10/30/2012US8299468 Display substrate having reduced defects
10/30/2012US8299462 Constructions comprising hafnium oxide and/or zirconium oxide
10/30/2012US8299461 Thin film transistor, method of producing the same, electrooptic apparatus, and sensor
10/30/2012US8299460 Pixel structure, organic electro-luminescence display unit, and fabricating method thereof
10/30/2012US8299459 Diindenopicene compound and organic light emitting device using the same
10/30/2012US8299457 Filler for sealing organic light emitting device and method for manufacturing the organic light emitting device using the same
10/30/2012US8299455 Semiconductor structures having improved contact resistance
10/30/2012US8299454 Nano line structures in microelectronic devices
10/30/2012US8299453 CMOS transistors with silicon germanium channel and dual embedded stressors
10/30/2012US8299452 Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
10/30/2012US8299451 Semiconductor light-emitting diode
10/30/2012US8299450 Non-volatile memory device including phase-change material
10/30/2012US8299349 Thermoelectric materials and chalcogenide compounds
10/30/2012US8298944 Warpage control for die with protruding TSV tips during thermo-compressive bonding
10/30/2012US8298918 Method for forming semiconductor layer and method for manufacturing light emitting device
10/30/2012US8298900 Nonvolatile semiconductor storage device with charge storage layer and its manufacturing method
10/30/2012US8298444 Oligoaniline compound
10/26/2012WO2012145247A1 An ultra-compact, passive, varactor-based wireless sensor using quantum capacitance effect in graphene
10/26/2012WO2012145130A2 Select devices
10/26/2012WO2012145079A1 Graphene nanoribbons and carbon nanotubes fabricated from sic fins or nanowire templates
10/26/2012WO2012145025A2 Source/drain extension control for advanced transistors
10/26/2012WO2012144951A1 A starting substrate for semiconductor engineering having substrate-through connections and a method for making same
10/26/2012WO2012144563A1 Polyamide-imide solution and polyamide-imide film
10/26/2012WO2012144557A1 Thin film transistor structure, and thin film transistor and display device provided with said structure
10/26/2012WO2012144556A1 Thin film transistor structure, and thin film transistor and display device provided with said structure
10/26/2012WO2012144517A1 Liquid crystal display panel
10/26/2012WO2012144271A1 Semiconductor device and method for producing same
10/26/2012WO2012144256A1 Mems sensor and method for manufacturing same
10/26/2012WO2012144165A1 Thin-film transistor, display panel, and method for producing thin-film transistor
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