Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2012
11/15/2012US20120286375 Preserving stress benefits of uv curing in replacement gate transistor fabrication
11/15/2012US20120286374 High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof
11/15/2012US20120286373 Gate structure and method for manufacturing the same
11/15/2012US20120286372 Reliability of high-K gate dielectric layers
11/15/2012US20120286371 Field Effect Transistor Device With Self-Aligned Junction
11/15/2012US20120286370 Semiconductor device and method for manufacturing the same
11/15/2012US20120286369 Semiconductor device and method of fabricating the same
11/15/2012US20120286361 High Voltage Device and Manufacturing Method Thereof
11/15/2012US20120286360 Field Effect Transistor Device with Self-Aligned Junction and Spacer
11/15/2012US20120286359 Lateral-diffused metal oxide semiconductor device (ldmos) and fabrication method thereof
11/15/2012US20120286356 Source and body contact structure for trench-dmos devices using polysilicon
11/15/2012US20120286355 Power Semiconductor Device and a Method for Forming a Semiconductor Device
11/15/2012US20120286354 Semiconductor device and method of manufacturing the same
11/15/2012US20120286353 Trench mos structure and method for forming the same
11/15/2012US20120286352 Trench mos structure and method for making the same
11/15/2012US20120286351 Cell array
11/15/2012US20120286350 Tunnel field effect transistor
11/15/2012US20120286349 Non-Volatile Memory Device With Additional Conductive Storage Layer
11/15/2012US20120286348 Structures and Methods of Improving Reliability of Non-Volatile Memory Devices
11/15/2012US20120286347 Semiconductor device
11/15/2012US20120286346 Semiconductor device and method of manufacturing semiconductor device
11/15/2012US20120286345 Non-volatile memory device and method for fabricating the same
11/15/2012US20120286344 Non-volatile memory devices and methods of forming the same
11/15/2012US20120286341 Adding Decoupling Function for TAP Cells
11/15/2012US20120286340 Controlling ferroelectricity in dielectric films by process induced uniaxial strain
11/15/2012US20120286339 Semiconductor storage device
11/15/2012US20120286338 Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for cmos devices
11/15/2012US20120286337 Fin field-effect transistor and method for manufacturing the same
11/15/2012US20120286336 Semiconductor device and method for fabricating semiconductor device
11/15/2012US20120286335 Semiconductor device and manufacturing method thereof
11/15/2012US20120286333 Low noise chemically-sensitive field effect transistors
11/15/2012US20120286330 Planar mosfet with textured channel and gate
11/15/2012US20120286329 SOI FET with embedded stressor block
11/15/2012US20120286327 Overvoltage and/or electrostatic discharge protection device
11/15/2012US20120286326 Power semiconductor devices and methods for manufacturing the same
11/15/2012US20120286325 Apparatus for electrostatic discharge protection
11/15/2012US20120286324 Manufacturing method for insulated-gate bipolar transitor and device using the same
11/15/2012US20120286323 Semiconductor component with improved softness
11/15/2012US20120286322 Methods and structures for electrostatic discharge protection
11/15/2012US20120286321 High-Performance Device for Protection from Electrostatic Discharge
11/15/2012US20120286315 Semiconductor device and manufacturing method thereof
11/15/2012US20120286293 Electronic device and manufacturing thereof
11/15/2012US20120286292 Power semiconductor module
11/15/2012US20120286291 Silicon carbide semiconductor device and method for manufacturing the same
11/15/2012US20120286290 Semiconductor element and semiconductor device
11/15/2012US20120286289 Semiconductor device and method for manufacturing a semiconductor device
11/15/2012US20120286288 Semiconductor device and semiconductor element
11/15/2012US20120286285 Method of implanting a workpiece to improve growth of a compound semiconductor
11/15/2012US20120286282 Thin-film transistor device manufacturing method, thin-film transistor device, and display device
11/15/2012US20120286279 Thin film transistor device and manufacturing method thereof
11/15/2012US20120286278 Thin film transistor, method for manufacturing the same, and semiconductor device
11/15/2012US20120286276 Semiconductor Device and Manufacturing Method Thereof
11/15/2012US20120286272 Thin film transistor and method of manufacturing the same
11/15/2012US20120286271 Oxide thin film transistor resistant to light and bias stress, and a method of manufacturing the same
11/15/2012US20120286270 Semiconductor device and manufacturing method thereof
11/15/2012US20120286267 Method for manufacturing semiconductor device
11/15/2012US20120286266 Method for manufacturing semiconductor device
11/15/2012US20120286265 Amorphous oxide thin film, thin film transistor using the same, and method for manufacturing the same
11/15/2012US20120286264 Flexible semiconductor device, method for manufacturing the same and image display device
11/15/2012US20120286263 Semiconductor Device and Method of Manufacturing the Same
11/15/2012US20120286262 Display device and electronic device
11/15/2012US20120286261 Semiconductor device and manufacturing method thereof
11/15/2012US20120286260 Method of manufacturing semiconductor device
11/15/2012US20120286259 Display substrate and method of manufacturing the same
11/15/2012US20120286243 Field-effect transistor, single-electron transistor and sensor
11/15/2012US20120286242 Nanowire pin tunnel field effect devices
11/15/2012US20120286236 Super lattice/quantum well nanowires
11/15/2012US20120286235 Nanoscale chemical templating with oxygen reactive materials
11/15/2012US20120286234 Directionally Recrystallized Graphene Growth Substrates
11/15/2012US20120286227 Semiconductor memory device
11/15/2012DE112006001809B4 Verfahren zur Herstellung einer Halbleiteranordnung A process for producing a semiconductor device
11/15/2012DE102012207878A1 Halbleiterbauelement mit verbesserter Softness Semiconductor device with improved softness
11/15/2012DE102012203595A1 Halbleitervorrichtung und Halbleiterelement Semiconductor device and semiconductor element
11/15/2012DE102012201207B4 Halbleitervorrichtungen mit eingekapselten Verspannungsbereichen und zugehörige Herstellungsverfahren Semiconductor devices encapsulated strain fields and associated manufacturing processes
11/15/2012DE102012101151A1 Halbleiter MOS Eingangsfenster für Strahlungsdetektoren Semiconductor MOS input window for radiation detectors
11/15/2012DE102011101304A1 High energy density exhibiting electrical energy storage unit i.e. capacitor, for use in electrical vehicle, has electrodes separated from each other by semiconductor layers exhibiting type of conductivity different from that of electrodes
11/15/2012DE102007028602B4 Feldeffekttransistoren einschließlich Source/Drain-Regionen, welche sich unter Säulen erstrecken Field effect transistors including source / drain regions, which extend under columns
11/15/2012DE102004006537B4 Durch ein Siliziumkarbidsubstrat gebildete Halbleitervorrichtung und Verfahren zur Herstellung derselben Silicon carbide substrate formed by a semiconductor device and method of manufacturing the same
11/14/2012EP2523217A1 Semiconductor device and electric power conversion device using same
11/14/2012EP2523216A1 Manufacturing method for thin film transistor with polysilicon active layer
11/14/2012EP2522032A2 A body-tied asymmetric n-type field effect transistor
11/14/2012EP2522027A1 A body-tied asymmetric p-type field effect transistor
11/14/2012CN202534653U Mesa-type unidirectional negative resistance diode chip
11/14/2012CN202534652U Super-junction semiconductor device having novel terminal structure
11/14/2012CN202534651U Superjunction high-voltage power device structure
11/14/2012CN202534650U Nonequilibrium junction terminal structure of superjunction device
11/14/2012CN202534649U Stop effect-improving groove type power MOS device
11/14/2012CN202534648U Power MOSFET and IGBT protected from ESD
11/14/2012CN1519632B LCD device and its mfg. method
11/14/2012CN1345474B Semiconductors structures using group III-nitride quaternary material system with reduced phase separation and method of fabrication
11/14/2012CN102782859A Method for manufacturing semiconductor device
11/14/2012CN102782858A Field-effect transistor, semiconductor memory, display element, image display device, and system
11/14/2012CN102782857A 半导体装置 Semiconductor device
11/14/2012CN102782856A Graphene based three-dimensional integrated circuit device
11/14/2012CN102782845A 半导体装置 Semiconductor device
11/14/2012CN102782823A Silicon carbide semiconductor device and method for manufacturing same
11/14/2012CN102782822A Semiconductor device and method for manufacturing semiconductor device
11/14/2012CN102782821A Vertical transistor including reentrant profile
11/14/2012CN102782820A Method for manufacturing silicon carbide semiconductor device and apparatus for manufacturing silicon carbide semiconductor device
11/14/2012CN102782819A Structure and method to form a thermally stale silicide in narrow dimension gate stacks
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