Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2012
10/18/2012US20120261769 Method of making a semiconductor structure useful in making a split gate non-volatile memory cell
10/18/2012US20120261759 Semiconductor device and method for manufacturing the same
10/18/2012US20120261757 Strained thin body cmos device having vertically raised source/drain stressors with single spacer
10/18/2012US20120261755 Pixel structure, display panel, electro-optical apparatus, and method thereof
10/18/2012US20120261754 MOSFET with Recessed channel FILM and Abrupt Junctions
10/18/2012US20120261753 DMOS Transistor with a Slanted Super Junction Drift Structure
10/18/2012US20120261752 Power ldmos device and high voltage device
10/18/2012US20120261751 Rectifier with vertical mos structure
10/18/2012US20120261750 Semiconductor device and method for fabricating the same
10/18/2012US20120261749 Semiconductor device and method of manufacturing the same
10/18/2012US20120261748 Semiconductor device with recess gate and method for fabricating the same
10/18/2012US20120261747 Semiconductor devices and methods of fabricating the same
10/18/2012US20120261746 Double-Trench Vertical Devices and Methods with Self-Alignment Between Gate and Body Contact
10/18/2012US20120261745 Semiconductor switching device employing a quantum dot structure
10/18/2012US20120261744 Microelectronic device structure and manufacturing method thereof
10/18/2012US20120261743 Semiconductor integrated circuit device and a method of manufacturing the same
10/18/2012US20120261742 Nonvolatile semiconductor memory apparatus
10/18/2012US20120261740 Flash memory and method for fabricating the same
10/18/2012US20120261739 Semiconductor device and fabrication method thereof
10/18/2012US20120261738 N-Well/P-Well Strap Structures
10/18/2012US20120261736 Non-volatile memory device and method of fabricating the same
10/18/2012US20120261728 Embedded stressor for semiconductor structures
10/18/2012US20120261727 Semiconductor device and method for manufacturing local interconnect structure thereof
10/18/2012US20120261726 Divot engineering for enhanced device performance
10/18/2012US20120261725 Stabilized Metal Silicides in Silicon-Germanium Regions of Transistor Elements
10/18/2012US20120261721 Semiconductor structures having nucleation layer to prevent interfacial charge for column iii-v materials on column iv or column iv-iv materials
10/18/2012US20120261720 Method for manufacturing a hemt transistor and corresponding hemt transistor
10/18/2012US20120261719 Heterojunction bipolar transistors and methods of manufacture
10/18/2012US20120261718 Method And Structure For Compound Semiconductor Contact
10/18/2012US20120261716 Semiconductor device
10/18/2012US20120261715 Power semiconductor device and methods for fabricating the same
10/18/2012US20120261714 Semiconductor device and manufacturing method of the same
10/18/2012US20120261677 Method for manufacturing silicon carbide semiconductor device and the silicon carbide semiconductor device
10/18/2012US20120261676 SiC FIELD EFFECT TRANSISTOR
10/18/2012US20120261675 Vertical junction field effect transistors with improved thermal characteristics and methods of making
10/18/2012US20120261674 Semiconductor device and method for forming the same
10/18/2012US20120261673 SiC Semiconductor Power Device
10/18/2012US20120261671 Display device and manufacturing method of the display device
10/18/2012US20120261667 Display device
10/18/2012US20120261666 Method of manufacturing thin film transistor array substrate and structure thereof
10/18/2012US20120261664 Semiconductor memory device
10/18/2012US20120261661 Electronic device, semiconductor device and manufacturing method thereof
10/18/2012US20120261660 Oxide thin film transistor and method of fabricating the same
10/18/2012US20120261658 ZnO-BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
10/18/2012US20120261657 Oxide semiconductor film and semiconductor device
10/18/2012US20120261655 Inorganic-Organic Hybrid Thin-Film Transistors Using Inorganic Semiconducting Films
10/18/2012US20120261647 Methods of forming structures having nanotubes extending between opposing electrodes and structures including same
10/18/2012US20120261646 Integrated Circuits Based on Aligned Nanotubes
10/18/2012US20120261645 Graphene Device Having Physical Gap
10/18/2012US20120261644 Structure and method of making graphene nanoribbons
10/18/2012US20120261643 GRAPHENE NANORIBBONS AND CARBON NANOTUBES FABRICATED FROM SiC FINS OR NANOWIRE TEMPLATES
10/18/2012US20120261640 Quantum well graphene structure formed on a dielectric layer having a flat surface
10/18/2012DE19735430B4 MOS-Transistor MOS transistor
10/18/2012DE112009003685T5 P-SiC-Halbleiter P-SiC semiconductor
10/18/2012DE102012103369A1 Ein Verfahren zum Ausbilden eines Halbleiterbauelements und ein Halbleiterbauelement A method of forming a semiconductor device and a semiconductor device
10/18/2012DE102012103180A1 SiC-Leistungshalbleitervorrichtung SiC power semiconductor device
10/18/2012DE102011016900A1 Halbleiterbauelement Semiconductor device
10/18/2012DE102011004506B4 Herstellungsverfahren für ein Halbleiterbauelement und Halbleiterbauelement als Stegtransistor, der auf einem strukturierten STI-Gebiet durch eine späte Stegätzung hergestellt ist Manufacturing method for a semiconductor device and semiconductor device as a web transistor which is fabricated on a structured STI region by a late Stegätzung
10/18/2012CA2833218A1 An electrical conductor
10/17/2012EP2511955A2 MIS device having a trench gate
10/17/2012EP2511949A1 Method for manufacturing a HEMT transistor and corresponding HEMT transistor
10/17/2012EP2511942A1 Method for manufacturing semiconductor device, and semiconductor device
10/17/2012EP2511896A1 Semiconductor device and method for producing same
10/17/2012EP2511760A1 Active matrix substrate and display device
10/17/2012EP2511358A1 Polishing slurry for silicon carbide and polishing method therefor
10/17/2012EP2511278A1 Thienopyrazine compound and field effect transistor containing same
10/17/2012EP2510547A2 Quantum-well-based semiconductor devices
10/17/2012EP2510541A1 Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
10/17/2012EP2510539A2 Methods of making semiconductor devices having implanted sidewalls and devices made thereby
10/17/2012EP2509721A1 Control apparatus for capacitive electromechanical transducer, and method of controlling the capacitive electromechanical transducer
10/17/2012CN202495446U Thyristor of novel structure
10/17/2012CN1830073B Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor
10/17/2012CN102742163A Method for driving a nonvolatile logic circuit as an exclusive-or circuit
10/17/2012CN102742161A Method for driving non-volatile switching device
10/17/2012CN102742016A Continuous tunable LC resonator using a FET as a varactor
10/17/2012CN102742015A Amorphous oxide thin film, thin film transistor comprising same, and process for production of the thin film transistor
10/17/2012CN102742014A Semiconductor device
10/17/2012CN102742013A Method for manufacturing flexible semiconductor device
10/17/2012CN102742012A Semiconductor component
10/17/2012CN102742003A 半导体器件 Semiconductor devices
10/17/2012CN102742002A Semiconductor device and driving method of the same
10/17/2012CN102742001A Semiconductor device
10/17/2012CN102741990A Damascene gate having protected shorting regions
10/17/2012CN102741982A Process for production of semiconductor element, and device for production of semiconductor element
10/17/2012CN102741977A 硅晶片和半导体装置 A silicon wafer and a semiconductor device
10/17/2012CN102741973A Silicon carbide substrate
10/17/2012CN102741672A Capacitance sensor
10/17/2012CN102741449A Al alloy film for display device
10/17/2012CN102738247A Schottky diode and corresponding production method
10/17/2012CN102738246A Schottky diodes having metal gate electrodes and methods of formation thereof
10/17/2012CN102738245A Diodes with embedded dummy gate electrodes
10/17/2012CN102738244A SONOS flash memory, preparation method thereof, and operation method thereof
10/17/2012CN102738243A Transistor, array substrate and method for manufacturing array substrate, liquid crystal display panel and display device
10/17/2012CN102738242A Power devices with super junctions and associated methods manufacturing
10/17/2012CN102738241A Transverse high-voltage transistor and manufacturing method thereof
10/17/2012CN102738240A Bigrid power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device
10/17/2012CN102738239A Trench-gate field effect transistors and methods of forming the same
10/17/2012CN102738238A Power semiconductor device and methods for fabricating the same
10/17/2012CN102738237A Graphene electronic device and method of fabricating the same
10/17/2012CN102738236A Insulated gate semiconductor device
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