Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2012
11/01/2012US20120273778 Memory device and manufacturing method the same
11/01/2012US20120273777 Sputtering target, oxide semiconductor film and semiconductor device
11/01/2012US20120273775 Semiconductor-on-diamond devices and methods of forming
11/01/2012US20120273774 Semiconductor device
11/01/2012US20120273763 Topological Insulator-Based Field-Effect Transistor
11/01/2012US20120273762 Electronic arrangements for passivated silicon nanowires
11/01/2012US20120273761 Nanowire Tunnel Field Effect Transistors
11/01/2012US20120273760 Bipolar Transistor with Lateral Emitter and Collector and Method of Production
11/01/2012US20120273759 Epitaxial substrate for electronic device and method of producing the same
10/2012
10/31/2012EP2518773A1 Manufacturing method of semiconductor device
10/31/2012EP2518772A1 Active matrix substrate, display panel provided with same, and method for manufacturing active matrix substrate
10/31/2012EP2518771A1 Compound semiconductor device and method for manufacturing same
10/31/2012EP2518767A2 Semiconductor device
10/31/2012EP2518764A2 Group III nitride based flip-chip integrated circuit and method for fabricating
10/31/2012EP2518757A1 Silicon carbide substrate
10/31/2012EP2518558A2 Liquid crystal display and array substrate
10/31/2012EP2518111A1 Composition and luminescent element obtained using same
10/31/2012EP2518110A1 Composition and light emitting element using the composition
10/31/2012EP2517256A1 Non-planar germanium quantum well devices
10/31/2012EP2517255A1 Field-effect transistor, semiconductor memory, display element, image display device, and system
10/31/2012EP2517254A2 Wrap-around contacts for finfet and tri-gate devices
10/31/2012EP2517253A2 Conductivity improvements for iii-v semiconductor devices
10/31/2012EP2517252A2 Techniques and configurations to impart strain to integrated circuit devices
10/31/2012EP2517251A2 Techniques for forming contacts to quantum well transistors
10/31/2012EP2517250A1 Double gate nanostructure fet
10/31/2012EP2517249A1 Power semiconductor device
10/31/2012EP2517245A1 Semiconductor device
10/31/2012EP2517244A2 Dual work function gate structures
10/31/2012EP2517231A1 Multi-gate semiconductor device with self-aligned epitaxial source and drain
10/31/2012EP2517230A1 Drive current enhancement in tri-gate mosfets by introduction of compressive metal gate stress using ion implantation
10/31/2012EP2517229A2 Semiconductor device having doped epitaxial region and its methods of fabrication
10/31/2012EP2517218A1 Varactor and method for producing a varactor
10/31/2012EP2516323A1 Method for manufacturing a nanowire structure
10/31/2012DE19825081B4 Halbleiterdünnfilm und Halbleitervorrichtung und Herstellungsverfahren Semiconductor thin film and semiconductor device and manufacturing method
10/31/2012DE112011100326T5 P-FET mit einem verspannten Nanodraht-Kanal und eingebetteten SiGe-Source- und Drain-Stressoren P-FET with a nanowire channel and clamped embedded SiGe source and drain stressors
10/31/2012DE112010004463T5 Durch optische und thermische Energie vernetzbares Isolatorschichtmaterial für organischen Dünnschichttransistor By optical and thermal energy curable insulator layer material for organic thin film transistor
10/31/2012DE112005000775B4 Halbleiter-auf-Isolator-Substrat und daraus hergestellte Bauelemente Semiconductor-on-insulator substrate and derived components
10/31/2012DE102012205879A1 Siliciumcarbid-Halbleitervorrichtung Silicon carbide semiconductor device
10/31/2012DE102012201950A1 Halbleitervorrichtung Semiconductor device
10/31/2012DE102010035296B4 Randabschlussstruktur für Transistoren mit hohen Durchbruchspannungen Edge termination structure for transistors with high breakdown voltages
10/31/2012DE102010002411B4 Verfahren zur Herstellung von Kontaktbalken mit reduzierter Randzonenkapazität in einem Halbleiterbauelement A process for the production of contact beams with reduced edge zone capacity in a semiconductor device
10/31/2012DE102009047307B4 Verfahren zur Vergrößerung der Stabilität eines Gatedielektrikums mit großem ε in einem Gatestapel mit großem ε durch eine sauerstoffreiche Titannitriddeckschicht A method for increasing the stability of a gate dielectric with a large ε in a gate stack with large ε by an oxygen-rich Titannitriddeckschicht
10/31/2012CN202513198U Semiconductor epitaxial growth structure
10/31/2012CN202513160U High voltage resistant device in Bipolar low-voltage technology
10/31/2012CN202513159U Device realized by adopting Bipolar low-voltage technology
10/31/2012CN102763332A Display device, semiconductor device, and driving method thereof
10/31/2012CN102763222A Field-effect transistor and method for manufacturing same
10/31/2012CN102763214A 半导体器件 Semiconductor devices
10/31/2012CN102763213A Thin-film transistor device manufacturing method, thin-film transistor device, and display device
10/31/2012CN102763204A Compound semiconductor device and method for manufacturing same
10/31/2012CN102763203A Method for manufacturing semiconductor device
10/31/2012CN102763202A Semiconductor device and method for manufacturing the same
10/31/2012CN102762631A Conducting polymer to which pyrene compounds are introduced, and organic solar cell using same
10/31/2012CN102760775A Capacitor and manufacturing method thereof
10/31/2012CN102760774A High-voltage trigger tube and triggering circuit for both stove oven and metal halogen lamp
10/31/2012CN102760773A NVN (Non-Volatile Memory) device and manufacturing method thereof
10/31/2012CN102760772A Transistor structure and driving circuit structure
10/31/2012CN102760771A Novel grid structure for RF-LDMOS (Radio Frequency-Laterally Diffused Metal Oxide Semiconductor) device
10/31/2012CN102760770A Single particle irradiation-resistant super junction VDMOS device
10/31/2012CN102760769A Through silicon via processing techniques for lateral double-diffused mosfets
10/31/2012CN102760768A Silicon carbide semiconductor device
10/31/2012CN102760767A Multi-level options for power mosfets
10/31/2012CN102760766A Metal-oxide-semiconductor field-effect transistor layout structure
10/31/2012CN102760765A Embedded type source/drain MOS (Metal Oxide Semiconductor) transistor and forming method thereof
10/31/2012CN102760764A 半导体器件 Semiconductor devices
10/31/2012CN102760763A MOS (Metal Oxide Semiconductor) device with groove structure and super-node structure and manufacturing method thereof
10/31/2012CN102760762A Semiconductor device and manufacture method thereof
10/31/2012CN102760761A Latch-preventing N type silicon on insulator transverse isolated gate bipolar transistor
10/31/2012CN102760760A Semiconductor device
10/31/2012CN102760759A Semiconductor power device
10/31/2012CN102760758A Metal gate structure
10/31/2012CN102760757A Integrated circuit structure including copper-aluminum interconnect and method for fabricating the same
10/31/2012CN102760756A Super junction metallic oxide field effect tube terminal structure with floating field plate
10/31/2012CN102760755A Metal oxide organic light-emitting diode (OLED) display device and manufacturing method thereof
10/31/2012CN102760754A Depletion type VDMOS (Vertical Double-diffusion Metal Oxide Semiconductor) and manufacturing method thereof
10/31/2012CN102760753A SOI LDMOS device with interface N<+> layer
10/31/2012CN102760752A Semiconductor power device
10/31/2012CN102760751A Structure of semiconductor device and formation method
10/31/2012CN102760737A Floating gate type EEPROM (Electrically Erasable Programmable Read Only Memory) device and manufacturing method thereof
10/31/2012CN102760734A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
10/31/2012CN102760714A Electrode structure and IGBT (Insulated Gate Bipolar Translator) module adopting same
10/31/2012CN102760697A Manufacturing method of semiconductor device
10/31/2012CN102760669A Memory device having buried bit line and vertical transistor and fabrication method thereof
10/31/2012CN102760648A Manufacturing method of voltage division ring of plane high-voltage transistor
10/31/2012CN102332466B Double-mesa silicon chip for manufacturing chip
10/31/2012CN102208456B Schottky diode controlled by potential barrier having superposed P<+>-P junction
10/31/2012CN102104063B SOI (Silicon On Insulator) longitudinal bipolar transistor and manufacturing method thereof
10/31/2012CN102103984B Stack capacitor of memory device and fabrication method thereof
10/31/2012CN102097459B Multilayer film structure for controllably preparing polycrystalline silicon films
10/31/2012CN102087961B P type doping ultra shallow junction and method for making P-channel metal oxide semiconductor (PMOS) transistor
10/31/2012CN102034863B Semiconductor device, transistor having gate of around cylindrical channel and manufacturing method
10/31/2012CN101996874B Semiconductor device and method for manufacturing the same
10/31/2012CN101834124B Manufacturing method of polysilicon thin film material based on annealing process
10/31/2012CN101814531B Capacitor composed by utilizing semiconductor PN junction capacitance and manufacturing method thereof
10/31/2012CN101796644B Field effect transistor
10/31/2012CN101680081B Sputtering target, oxide semiconductor film and semiconductor device
10/31/2012CN101677109B Semiconductor device and method for making the same
10/31/2012CN101656215B Laterally double diffused metal oxide semiconductor transistor and manufacturing method thereof
10/31/2012CN101611471B Epitaxial substrate for field effect transistor
10/31/2012CN101573798B I-MOSFET manufacture method
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