Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2012
10/26/2012WO2012144147A1 Vertical gate semiconductor device and method of manufacturing same
10/26/2012WO2012144100A1 Nitride semiconductor device
10/26/2012WO2012142804A1 Non-volatile charge capture storage device, method for preparing same and application thereof
10/26/2012WO2012142781A1 Tunneling current amplifying transistor
10/26/2012WO2012142735A1 Semiconductor memory structure and method for manufacturing same
10/26/2012WO2012106101A3 A schottky barrier diode, a method of forming the diode and a design structure for the diode
10/26/2012WO2012088338A3 Photodetecting imager devices having correlated double sampling and associated methods
10/26/2012WO2012088097A3 Column iv transistors for pmos integration
10/26/2012CA2843406A1 Graphene nanoribbons and carbon nanotubes fabricated from sic fins or nanowire templates
10/25/2012US20120269019 Semiconductor device having control bitline to prevent floating body effect
10/25/2012US20120268847 Trilayer reader with current constraint at the abs
10/25/2012US20120268681 Semiconductor circuit for electro-optical device and method of manufacturing the same
10/25/2012US20120268670 Contact structure and semiconductor device
10/25/2012US20120268194 Semiconductor device
10/25/2012US20120267767 Semiconductor overlapped pn structure and manufacturing method thereof
10/25/2012US20120267766 Resist underlayer composition and process of producing integrated circuit devices using the same
10/25/2012US20120267764 Bipolar junction transistor with layout controlled base and associated methods of manufacturing
10/25/2012US20120267761 Capacitor
10/25/2012US20120267760 Capacitor and manufacturing method thereof
10/25/2012US20120267759 Decoupling capacitors recessed in shallow trench isolation
10/25/2012US20120267758 Isolated Capacitors Within Shallow Trench Isolation
10/25/2012US20120267757 Capacitor structure with metal bilayer and method for using the same
10/25/2012US20120267754 Method of Fabricating Isolated Capacitors and Structure Thereof
10/25/2012US20120267753 Integrated circuit device and method of manufacturing the same
10/25/2012US20120267752 Independently voltage controlled volume of silicon on a silicon on insulator chip
10/25/2012US20120267750 Semiconductor apparatus
10/25/2012US20120267749 Semiconductor device having fuse elements and guard ring surrounding the fuse elements
10/25/2012US20120267748 Semiconductor device including schottky barrier junction and pn junction
10/25/2012US20120267736 Method And System For Providing A Magnetic Junction Having An Engineered Barrier Layer
10/25/2012US20120267735 Planar Multiferroic/Magnetostrictive Nanostructures as Memory Elements, Two-Stage Logic Gates and Four-State Logic Elements for Information Processing
10/25/2012US20120267734 Spin transport device
10/25/2012US20120267733 Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory
10/25/2012US20120267732 Mems package structure
10/25/2012US20120267731 Sensor mounted in flip-chip technology on a substrate
10/25/2012US20120267730 Micro-electromechanical system (mems) device
10/25/2012US20120267729 Self-sealed fluidic channels for nanopore array
10/25/2012US20120267728 Dummy Structures and Methods
10/25/2012US20120267727 Method for forming self-aligned contact
10/25/2012US20120267726 Dual metal gate corner
10/25/2012US20120267725 Semiconductor structure and method for manufacturing the same
10/25/2012US20120267724 Mos semiconductor device and methods for its fabrication
10/25/2012US20120267721 Floating body memory cell having gates favoring different conductivity type regions
10/25/2012US20120267719 Method and Apparatus for use in Improving Linearity of MOSFETS using an Accumulated Charge Sink-Harmonic Wrinkle Reduction
10/25/2012US20120267717 Enhanced hvpmos
10/25/2012US20120267716 High voltage metal oxide semiconductor device with low on-state resistance
10/25/2012US20120267715 High voltage semiconductor device and method for fabricating the same
10/25/2012US20120267714 Double layer metal (dlm) power mosfet
10/25/2012US20120267713 Power semiconductor structure with schottky diode and fabrication method thereof
10/25/2012US20120267712 Semiconductor device
10/25/2012US20120267711 Multi-level options for power mosfets
10/25/2012US20120267710 Semiconductor Device
10/25/2012US20120267709 Semiconductor device
10/25/2012US20120267708 Termination structure for power devices
10/25/2012US20120267707 Semiconductor device and manufacturing method of the same
10/25/2012US20120267706 Semiconductor device and manufacturing method thereof
10/25/2012US20120267704 Transistor arrangement with a mosfet
10/25/2012US20120267703 Information Storage Medium Using Nanocrystal Particles, Method of Manufacturing the Information Storage Apparatus Including the Information Storage Medium
10/25/2012US20120267702 Vertical memory devices and methods of manufacturing the same
10/25/2012US20120267701 Three dimensional semiconductor memory devices and methods of manufacturing the same
10/25/2012US20120267700 Tunneling current amplification transistor
10/25/2012US20120267698 Floating-gate nonvolatile semiconductor memory device and method of making
10/25/2012US20120267696 Semiconductor device
10/25/2012US20120267688 Semiconductor wafer, semiconductor device, and method for producing semiconductor wafer
10/25/2012US20120267687 Nitride semiconductor device and manufacturing method thereof
10/25/2012US20120267686 Nitride semiconductor device and manufacturing method thereof
10/25/2012US20120267683 Early embedded silicon germanium with insitu boron doping and oxide/nitride proximity spacer
10/25/2012US20120267681 Semiconductor device and method for manufacturing semiconductor device
10/25/2012US20120267680 Semiconductor device
10/25/2012US20120267679 Starting structure and protection component comprising such a starting structure
10/25/2012US20120267642 Nitride semicondutor device and manufacturing method thereof
10/25/2012US20120267640 Semiconductor heterostructure diodes
10/25/2012US20120267639 Nitride semiconductor device and method for manufacturing the same
10/25/2012US20120267638 GaN FILM STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
10/25/2012US20120267637 Nitride semiconductor device and manufacturing method thereof
10/25/2012US20120267636 Lateral High Electron Mobility Transistor
10/25/2012US20120267635 Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same
10/25/2012US20120267633 Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method
10/25/2012US20120267632 Select devices
10/25/2012US20120267628 Liquid Crystal Display Device
10/25/2012US20120267627 Polycrystalline texturing composition and method
10/25/2012US20120267625 Thin film transistor and display device
10/25/2012US20120267624 Semiconductor device and method for manufacturing thereof
10/25/2012US20120267623 Semiconductor device and method for manufacturing semiconductor device
10/25/2012US20120267622 Oxide material and semiconductor device
10/25/2012US20120267621 Thin film transistor and fabrication method thereof
10/25/2012US20120267608 Functional device and functional system
10/25/2012US20120267606 Group iii nitride crystal substrate, epilayer-containing group iii nitride crystal substrate, semiconductor device and method of manufacturing the same
10/25/2012US20120267605 Methods for the Production of Nanoscale Heterostructures
10/25/2012US20120267604 Bent nanowires and related probing of species
10/25/2012US20120267603 Method for fabricating quantum dot and semiconductor structure containing quantum dot
10/25/2012DE112006001589B4 Verfahren zur Bildung von Halbleiterstrukturen A method for forming semiconductor structures,
10/25/2012DE102012206605A1 Transistoranordnung mit einem mosfet und herstellungsverfahren Manufacturing processes transistor arrangement with a mosfet and
10/25/2012DE102012205662A1 MOS-Halbleitervorrichtung und Verfahren zu deren Herstellung MOS semiconductor device and process for their preparation
10/25/2012DE102012204420A1 Halbleitervorrichtung Semiconductor device
10/25/2012DE102012103517A1 Dummy-Strukturen und Verfahren Dummy structures and procedures
10/25/2012DE102012103388A1 Lateraltransistor mit hoher Elektronenbeweglichkeit Lateral transistor having a high electron mobility
10/25/2012DE102012008068A1 Optionen für mehrere Ebenen eines Leistungs-MOSFET Options for multiple levels of a power MOSFET
10/25/2012DE102012007954A1 Doppelschichtmetall- (DLM) Leistungs-MOSFET Doppelschichtmetall- (DLM) power MOSFET
10/25/2012DE102011088638B3 Method for manufacturing high voltage component e.g. N-channel metal oxide semiconductor transistor, in mobile telephone, involves forming connection to field structure, and coupling connection with potential distributing field in substrate
10/25/2012DE102011018450A1 Semiconductor device i.e. complementary metal-oxide semiconductor device, for dual CPU assembly, has n-doped region, and transistor structure including potential terminal that is connected with tub terminal over resistor
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