Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2012
11/06/2012US8304329 Power device structures and methods
11/06/2012US8304327 Method of manufacturing a semiconductor device
11/06/2012US8304318 Methods of fabricating MOS transistors having recesses with elevated source/drain regions
11/06/2012US8304310 Manufacture method of semiconductor device
11/06/2012US8304297 Active matrix substrate, method of making the substrate, and display device
11/06/2012US8304275 MEMS device assembly and method of packaging same
11/06/2012US8304266 Manufacturing method of thin film transistor substrate of liquid crystal display panel
11/06/2012US8304021 Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device
11/01/2012WO2012149195A1 Superjunction structures for power devices and methods of manufacture
11/01/2012WO2012149184A2 Dmos transistor with cavity below drift region
11/01/2012WO2012148847A1 Thin film transistors (tft) active-matrix imod pixel layout
11/01/2012WO2012148573A2 A high endurance non-volatile memory cell and array
11/01/2012WO2012147704A1 Tft substrate and method for correcting wiring fault on tft substrate
11/01/2012WO2012147564A1 High-molecular-weight compound and electronic element comprising same
11/01/2012WO2012147287A1 Semiconductor device and method for manufacturing semiconductor device
11/01/2012WO2012146190A1 Semiconductor power device
11/01/2012WO2012146044A1 Asymmetrical-gate mos device and fabricating method thereof
11/01/2012WO2012146019A1 Preparation method of nano mos device and nano mos device
11/01/2012WO2012146018A1 Preparation method of nano mos device and nano mos device
11/01/2012WO2012145976A1 Embedded source/drain mos transistor and manufacturing method thereof
11/01/2012WO2012145952A1 Method of depositing gate dielectric, method of fabricating mis capacitor, and mis capacitor
11/01/2012WO2012145951A1 Method of fabricating graphene based field effect transistor
11/01/2012WO2012093146A3 Method for producing a semiconductor component comprising a lateral resistance region
11/01/2012WO2012087986A3 Magnetic phase change logic
11/01/2012US20120278582 Magnetic memory element, magnetic memory and initializing method
11/01/2012US20120276690 Semiconductor device and method for manufacturing the same
11/01/2012US20120275220 Three-dimensional multi-bit non-volatile memory and method for manufacturing the same
11/01/2012US20120274402 High electron mobility transistor
11/01/2012US20120273987 Inorganic nanowires
11/01/2012US20120273925 Patterned doping of semiconductor substrates using photosensitive monolayers
11/01/2012US20120273924 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition
11/01/2012US20120273923 Method of manufacturing semiconductor device and wafer
11/01/2012US20120273922 Semiconductor device and method of manufacturing the same
11/01/2012US20120273921 Semiconductor device and method for fabricating the same
11/01/2012US20120273920 Devices including composite thermal capacitors
11/01/2012US20120273918 Semiconductor device and method for forming the same
11/01/2012US20120273916 Superjunction Structures for Power Devices and Methods of Manufacture
11/01/2012US20120273904 Mineral electret-based electromechanical device and method for manufacturing same
11/01/2012US20120273903 Semiconductor device
11/01/2012US20120273902 Gate stack structure with etch stop layer and manufacturing process thereof
11/01/2012US20120273901 Semiconductor device and method for manufacturing the same
11/01/2012US20120273900 Semiconductor device and manufacturing method thereof
11/01/2012US20120273895 Damascene method of forming a semiconductor structure and a semiconductor structure with multiple fin-shaped channel regions having different widths
11/01/2012US20120273891 Semiconductor device with reduced surface field effect and methods of fabrication the same
11/01/2012US20120273889 Shallow trench isolation for soi structures combining sidewall spacer and bottom liner
11/01/2012US20120273886 Embedded source/drain mos transistor and method for forming the same
11/01/2012US20120273885 High-Voltage Transistor Structure with Reduced Gate Capacitance
11/01/2012US20120273884 Superjunction Structures for Power Devices and Methods of Manufacture
11/01/2012US20120273883 High voltage devices and methods for forming the same
11/01/2012US20120273882 Shallow-trench cmos-compatible super junction device structure for low and medium voltage power management applications
11/01/2012US20120273881 DMOS Transistor with a Cavity that Lies Below the Drift Region
11/01/2012US20120273880 Structure and Fabrication of Field-effect Transistor for Alleviating Short-channel Effects and/or Reducing Junction Capacitance
11/01/2012US20120273879 Top drain ldmos
11/01/2012US20120273878 Through silicon via processing techniques for lateral double-diffused mosfets
11/01/2012US20120273876 Semiconductor device and method for forming the same
11/01/2012US20120273875 Superjunction Structures for Power Devices and Methods of Manufacture
11/01/2012US20120273874 Memory device having buried bit line and vertical transistor and fabrication method thereof
11/01/2012US20120273873 Package with multiple dies
11/01/2012US20120273872 Three Dimensional Semiconductor Memory Devices and Methods of Fabricating the Same
11/01/2012US20120273871 Superjunction Structures for Power Devices and Methods of Manufacture
11/01/2012US20120273869 Nonvolatile semiconductor memory device
11/01/2012US20120273868 Nonvolatile semiconductor storage device and method of manufacture thereof
11/01/2012US20120273866 Semiconductor Memory Device with a Buried Drain and Its Memory Array
11/01/2012US20120273865 3-d non-volatile memory device and method of manufacturing the same
11/01/2012US20120273864 High endurance non-volatile memory cell and array
11/01/2012US20120273863 Nonvolatile semiconductor memory device and method for manufacturing same
11/01/2012US20120273861 Method of depositing gate dielectric, method of preparing mis capacitor, and mis capacitor
11/01/2012US20120273859 Semiconductor device and method of forming the same
11/01/2012US20120273858 Semiconductor memory device
11/01/2012US20120273857 Semiconductor device structure as a capacitor
11/01/2012US20120273856 Tunneling magnetoresistive effect element and spin mos field-effect
11/01/2012US20120273853 Semiconductor device and method of manufacturing same
11/01/2012US20120273852 Transistors having temperature stable schottky contact metals
11/01/2012US20120273851 Semiconductor device and manufacturing method thereof
11/01/2012US20120273850 Semiconductor device and method for fabricating the same
11/01/2012US20120273849 Electronic Module Metalization System, Apparatus, and Methods of Forming Same
11/01/2012US20120273848 Borderless contact structure employing dual etch stop layers
11/01/2012US20120273845 Electronic ph sensor die packaging
11/01/2012US20120273844 Magnetic random access memory and method of manufacturing the same
11/01/2012US20120273840 Semiconductor structure and method for manufacturing the same
11/01/2012US20120273839 Semiconductor wafer, method for producing semiconductor wafer, and method for producing photo-electric conversion device
11/01/2012US20120273836 Semiconductor device
11/01/2012US20120273805 Method for producing silicon layers
11/01/2012US20120273803 Thermal dissipation substrate
11/01/2012US20120273802 Junction barrier schottky diodes with current surge capability
11/01/2012US20120273801 Silicon carbide semiconductor device
11/01/2012US20120273800 Composite substrate having single-crystal silicon carbide substrate
11/01/2012US20120273798 Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device
11/01/2012US20120273797 Semiconductor device and method for manufacturing same
11/01/2012US20120273795 Semiconductor device
11/01/2012US20120273794 Semiconductor light emitting device, wafer, and method for manufacturing semiconductor light emitting device
11/01/2012US20120273792 Zone Melt Recrystallization of Thin Films
11/01/2012US20120273791 Method of forming semiconductor devices with buried gate electrodes and devices formed by the same
11/01/2012US20120273790 Semiconductor device and method of manufacturing the same
11/01/2012US20120273789 Liquid crystal display and array substrate
11/01/2012US20120273788 Printed electronic device
11/01/2012US20120273786 Organic surface protective layer composition and method for protecting organic surface
11/01/2012US20120273784 Fabrication of electronic and photonic systems on flexible substrates by layer transfer method
11/01/2012US20120273780 Semiconductor device and method for manufacturing the same
11/01/2012US20120273779 Semiconductor device and method for manufacturing the same
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