Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2012
10/17/2012CN102738235A Single-sided access device and fabrication method thereof
10/17/2012CN102738234A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
10/17/2012CN102738233A Semiconductor device and manufacturing method thereof
10/17/2012CN102738232A Super junction power transistor structure and manufacturing method thereof
10/17/2012CN102738231A Semiconductor structure and method for shortening spacer height
10/17/2012CN102738230A Ultra-high voltage N-type metal oxide semiconductor element and manufacturing method thereof
10/17/2012CN102738229A Structure of power transistor and method for manufacturing power transistor
10/17/2012CN102738228A High electron mobility transistor (HEMT) with gate edge groove type source field plate structure
10/17/2012CN102738227A SiC半导体功率器件 SiC semiconductor power devices
10/17/2012CN102738226A Power device with trenched gate structure and method of fabricating the same
10/17/2012CN102738225A Semiconductor element and method for manufacturing the same
10/17/2012CN102738224A Multi-layer metal ohmic contact system adopting silicon alloys and manufacturing method thereof
10/17/2012CN102738223A Transistor with buried fins
10/17/2012CN102738222A Recessed gate transistor with cylindrical fins
10/17/2012CN102738221A Method of fabricating a gate dielectric layer
10/17/2012CN102738220A Oxide-nitride-oxide (ONO) structure and manufacturing method thereof
10/17/2012CN102738219A Groove type MOS (metal oxide semiconductor) transistor, fabrication method and integrated circuit thereof
10/17/2012CN102738218A Integrated circuit and manufacturing method thereof
10/17/2012CN102738217A Field plate and circuit therewith
10/17/2012CN102738216A Semiconductor device, single-crystal semiconductor thin film-including substrate, and production methods thereof
10/17/2012CN102738215A crosswise double diffusion MOFET and manufacturing method thereof
10/17/2012CN102738214A Super-junction vertical double-diffused metal oxide semiconductor (VDMOS) capable of effectively preventing charge imbalance
10/17/2012CN102738213A 半导体装置 Semiconductor device
10/17/2012CN102738212A Configuration and method to generate saddle junction electric field in edge termination
10/17/2012CN102738211A Approach to intergrate schottky in mosfet
10/17/2012CN102738210A Semiconductor device and manufacture method thereof
10/17/2012CN102738209A Semiconductor element and preparation method thereof
10/17/2012CN102738208A Semiconductor PN overlapping structure and preparation method thereof
10/17/2012CN102738207A Super junction device terminal protection structure and manufacturing method thereof
10/17/2012CN102738206A 氧化物半导体膜及半导体装置 An oxide semiconductor film and a semiconductor device
10/17/2012CN102738182A Optical sensor device of amorphous oxide semiconductor, and fabrication method thereof
10/17/2012CN102738180A 显示装置 The display device
10/17/2012CN102738177A Strain Si BiCMOS (Bipolar-Complementary Metal-Oxide-Semiconductor) integrated device based on SOI (Silicon on Insulator) substrate and preparation method thereof
10/17/2012CN102738172A Double-polysilicon planar SOI (silicon on insulator) BiCMOS (bipolar complementary metal oxide semiconductor) integrated device and preparation method
10/17/2012CN102738170A Nonvolatile memory and preparation method thereof
10/17/2012CN102738167A Semiconductor device and forming method thereof
10/17/2012CN102738147A Electro-optical device, projection-type display device, and electronic apparatus
10/17/2012CN102738145A Display device and electronic apparatus
10/17/2012CN102738141A Semiconductor structure and manufacturing method and operating method thereof
10/17/2012CN102738005A Method for forming a semiconductor device having nanocrystal
10/17/2012CN102737993A Groove DMOS device and manufacturing method thereof
10/17/2012CN102737976A Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure
10/17/2012CN102737972A Recessed trench gate structure and method of fabricating same
10/17/2012CN102737971A Semiconductor element provided with metal gate and manufacturing method thereof
10/17/2012CN102737970A Semiconductor device and manufacturing method for gate dielectric layer thereof
10/17/2012CN102737967A Semiconductor device and substrate with chalcogen doped region
10/17/2012CN102737966A Method of gate work function adjustment and metal gate transistor
10/17/2012CN102737962A Epitaxial structure and preparation method thereof
10/17/2012CN102737605A Semiconductor device, display device, and electronic apparatus
10/17/2012CN102736333A Array substrate, liquid crystal display device and manufacture method for array substrate
10/17/2012CN102097477B MIS (metal-insulator-semiconductor) and MIM (metal-insulator-metal) device provided with gate
10/17/2012CN102054875B Power type GaN base Schottky diode and manufacture method thereof
10/17/2012CN102034828B Floating gate structures with vertical projections
10/17/2012CN102005473B IGBT (insulated gate bipolar translator) with improved terminal
10/17/2012CN101982873B Power device with super-junction structure and manufacturing method thereof
10/17/2012CN101946330B Semiconductor device manufacturing method
10/17/2012CN101819992B Rectifier grain, production method thereof and suction cup mould
10/17/2012CN101819988B Organic light-emitting display device and method for manufacturing the same
10/17/2012CN101783367B Nanowire MOS transistor based on III-V element and preparation method thereof
10/17/2012CN101540324B Semiconductor device
10/17/2012CN101419970B Semiconductor device with control circuit
10/16/2012US8289241 Display device
10/16/2012US8289164 Semiconductor device and manufacturing method thereof
10/16/2012US8288874 Stackable semiconductor assemblies and methods of manufacturing such assemblies
10/16/2012US8288871 Reduced-stress bump-on-trace (BOT) structures
10/16/2012US8288870 Semiconductor chip package and method for designing the same
10/16/2012US8288868 Substrate bonding method and semiconductor device
10/16/2012US8288867 Semiconductor constructions
10/16/2012US8288864 Microwave module
10/16/2012US8288841 Handle wafer having viewing windows
10/16/2012US8288839 Transient voltage suppressor having symmetrical breakdown voltages
10/16/2012US8288835 Microshells with integrated getter layer
10/16/2012US8288833 Semiconductor device and manufacturing method thereof
10/16/2012US8288831 Semiconductor device, method of manufacturing the same, and electronic device having the same
10/16/2012US8288829 Triple well transmit-receive switch transistor
10/16/2012US8288826 Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX)
10/16/2012US8288824 Semiconductor device including insulated gate bipolar transistor and diode
10/16/2012US8288823 Double-gate transistor structure equipped with a multi-branch channel
10/16/2012US8288821 SOI (silicon on insulator) substrate improvements
10/16/2012US8288820 High voltage power integrated circuit
10/16/2012US8288818 Devices with nanocrystals and methods of formation
10/16/2012US8288817 Semiconductor constructions for transistor gates and NAND cell units
10/16/2012US8288815 Gate structure of semiconductor device having a conductive structure with a middle portion and two spacer portions
10/16/2012US8288814 Via definition for semiconductor die
10/16/2012US8288813 Integrated memory device having columns having multiple bit lines
10/16/2012US8288812 Semiconductor device and method of manufacturing the same
10/16/2012US8288811 Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses
10/16/2012US8288810 Semiconductor device and manufacturing method thereof
10/16/2012US8288809 Zirconium-doped tantalum oxide films
10/16/2012US8288806 Asymmetric field effect transistor structure and method
10/16/2012US8288805 Semiconductor device with gate-undercutting recessed region
10/16/2012US8288804 Field effect transistor and method for manufacturing the same
10/16/2012US8288803 Tunnel field effect devices
10/16/2012US8288802 Spacer structure wherein carbon-containing oxynitride film formed within
10/16/2012US8288801 Semiconductor device and method for forming the same
10/16/2012US8288800 Hybrid transistor
10/16/2012US8288797 Integrated devices on a common compound semiconductor III-V wafer
10/16/2012US8288795 Thyristor based memory cells, devices and systems including the same and methods for forming the same
10/16/2012US8288783 Light emitting device and image display device
10/16/2012US8288780 Organic light emitting display device
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