Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2013
02/28/2013US20130048952 Hole doping of graphene
02/28/2013US20130048951 Graphene switching device having tunable barrier
02/28/2013US20130048950 On-demand nanoelectronics platform
02/28/2013US20130048949 Carbonaceous Nanomaterial-Based Thin-Film Transistors
02/28/2013US20130048948 Inverter logic devices including graphene field effect transistor having tunable barrier
02/28/2013US20130048947 Methods to fabricate vertically oriented anatase nanowire arrays on transparent conductive substrates and applications thereof
02/28/2013US20130048942 Nitride semiconductor template and light-emitting diode
02/28/2013US20130048941 Solid state light emitting semiconductor structure and epitaxy growth method thereof
02/28/2013DE10236455B4 Halbleiterbauelement mit einem Leistungshalbleiterelement eines Vertikaltyps A semiconductor device comprising a power semiconductor element of a vertical type
02/28/2013DE102012207117A1 Einstellen der Schwellwertspannung in einem FIN-Transistor durch Eckimplantation Setting the threshold voltage in a FIN transistor by Eckimplantation
02/28/2013DE102012107988A1 Halbleiterbauelement mit vergrabener Elektrode A semiconductor device with a buried electrode
02/28/2013DE102012107924A1 Halbleiterbauelement mit einer amorphen halb-isolierenden Schicht, Temperatursensor und Verfahren zur Herstellung eines Halbleiterbauelements A semiconductor device with an amorphous semi-insulating layer, temperature sensor and method for manufacturing a semiconductor device
02/28/2013DE102008062921B4 Leistungshalbleiter mit einer leicht dotierten Drift- und Pufferschicht Power semiconductor with a lightly doped drift and buffer layer
02/28/2013DE102007027446B4 Halbleitersubstrat auf Gruppe-III-V-Nitrid-Basis und lichtemittierende Vorrichtung auf Gruppe-III-V-Nitrid-Basis Semiconductor substrate to the Group III-V nitride-based light emitting device and the group III-V nitride-based
02/27/2013EP2562829A1 Semiconductor element and method for producing the same
02/27/2013EP2562819A2 Method of fabricating a high-voltage transistor
02/27/2013EP2562818A1 Semiconductor device
02/27/2013EP2562817A1 Semiconducting component
02/27/2013EP2562804A1 Method for making a device comprising transistors strained by silicidation of source and drain regions, and device
02/27/2013EP2562803A1 Method for making a device comprising transistors strained by an external layer, and device
02/27/2013EP2562802A2 Method for producing a three-dimensional integrated circuit
02/27/2013EP2562799A1 Semiconductor device and method for manufacturing same
02/27/2013EP2562794A1 Semiconductor device and method for fabricating the same
02/27/2013CN202758895U Power diode device
02/27/2013CN202758894U High frequency circuit transistor
02/27/2013CN202758893U Transistor layout structure and chip layout structure
02/27/2013CN202758892U Trench MOSFET transistor having groove source electrode field plate
02/27/2013CN202758891U Depletion type VDMOS
02/27/2013CN202758890U Transistor layout structure and chip layout structure
02/27/2013CN202758852U Semiconductor device
02/27/2013CN102947963A Organic semiconductive material precursor containing dithienobenzodithiophene derivative, ink, insulating member, charge-transporting member, and organic electronic device
02/27/2013CN102947940A High voltage transistor using diluted drain
02/27/2013CN102947939A Phase control thyristor with improved pattern of local emitter shorts dots
02/27/2013CN102947938A Semiconductor devices having improved adhesion and methods of fabricating the same
02/27/2013CN102947937A Semiconductor device and method for fabricating semiconductor device
02/27/2013CN102947934A Power semiconductor device
02/27/2013CN102947928A Semiconductor device and method for manufacturing same
02/27/2013CN102947921A 半导体器件 Semiconductor devices
02/27/2013CN102947871A Semiconductor device and process for production thereof
02/27/2013CN102947359A Curable composition and method for producing cured film
02/27/2013CN102945863A Thin film transistor and manufacturing method thereof, array substrate and display device
02/27/2013CN102945862A Method for manufacturing semiconductor device
02/27/2013CN102945861A Strip bar modulation type tunneling field effect transistor and manufacture method thereof
02/27/2013CN102945860A AlGaN/GaN heterojunction enhancement-mode device with in-situ SiN cap layer and production method thereof
02/27/2013CN102945859A GaN heterojunction HEMT (High Electron Mobility Transistor) device
02/27/2013CN102945858A IGBT (Insulated Gate Bipolar Transistor) device with field stop buffer layer and manufacture method of IGBT device
02/27/2013CN102945857A 无定形氧化物和场效应晶体管 Amorphous oxide, and field-effect transistors
02/27/2013CN102945856A Reverse conducting IGBT (insulated gate bipolar transistor) structure and preparation method thereof
02/27/2013CN102945851A Silicon on insulator structure and semiconductor device structure
02/27/2013CN102945846A Array substrate, manufacturing method thereof and display device
02/27/2013CN102945807A TFT (Thin Film Transistor) and preparation method thereof
02/27/2013CN102945806A Manufacturing method of MOS (metal oxide semiconductor) device of integrated Schottky diode
02/27/2013CN102945794A Two-dimensional electronic material device and mixed photoetching method thereof
02/27/2013CN102945789A Preparation method of low-temperature polycrystalline silicon film, thin-film transistor and preparation method of thin-film transistor
02/27/2013CN102227000B Silicon-carbide MOSFET (metal-oxide-semiconductor field-effect transistor) device based on super junctions and manufacturing method thereof
02/27/2013CN102104044B Separate gate flash memory and manufacturing method thereof
02/27/2013CN102044433B Mixed source-drain electrode field effect transistor and manufacturing method thereof
02/27/2013CN101946324B Driving method for reverse conducting semiconductor element, semiconductor device, and feeding device
02/27/2013CN101826561B Method of forming stacked capacitor dram cells
02/27/2013CN101814433B Lateral bipolar junction transistor and method for manufacturing the same
02/27/2013CN101796636B Chip connection method
02/27/2013CN101789425B Semiconductor element, electric circuit, display device and light-emitting device
02/27/2013CN101755326B Reducing transistor junction capacitance by recessing drain and source regions
02/27/2013CN101673673B Method for forming epitaxial wafer and epitaxial wafer formed by using same
02/27/2013CN101663733B Method for manufacturing soi substrate and semiconductor device
02/27/2013CN101432859B An soi transistor having an embedded strain layer and a reduced floating body effect and a method for forming the same
02/27/2013CN101390253B Ceramic antenna module and methods of manufacture thereof
02/26/2013US8386883 Lengthening life of a limited life memory
02/26/2013US8385147 Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features
02/26/2013US8385122 Non-volatile memory device having stacked structure, and memory card and electronic system including the same
02/26/2013US8385027 TMR device with novel free layer structure
02/26/2013US8384699 Semiconductor device
02/26/2013US8384657 Semiconductor device
02/26/2013US8384229 Semiconductor device and method for manufacturing the same
02/26/2013US8384228 Package including wires contacting lead frame edge
02/26/2013US8384224 Through wafer vias and method of making same
02/26/2013US8384220 Semiconductor integrated circuit device and fabrication process thereof
02/26/2013US8384218 Back side metallization with superior adhesion in high-performance semiconductor devices
02/26/2013US8384214 Semiconductor structure, pad structure and protection structure
02/26/2013US8384207 Semiconductor integrated circuit device having insulated through wires
02/26/2013US8384200 Semiconductor device assemblies including face-to-face semiconductor dice and systems including such assemblies
02/26/2013US8384198 Resistance change memory and manufacturing method thereof
02/26/2013US8384196 Formation of devices by epitaxial layer overgrowth
02/26/2013US8384195 Nanochannel device and method for manufacturing thereof
02/26/2013US8384194 Power semiconductor device comprising a plurality of trench IGBTs
02/26/2013US8384193 Bipolar transistor with two different emitter portions having same type dopant of different concentrations for improved gain
02/26/2013US8384184 Laterally diffused metal oxide semiconductor device
02/26/2013US8384181 Schottky diode structure with silicon mesa and junction barrier Schottky wells
02/26/2013US8384170 Pressure sensor
02/26/2013US8384168 Sensor device with sealing structure
02/26/2013US8384167 Semiconductor device with field effect transistor and manufacturing method thereof
02/26/2013US8384166 Method for manufacturing semiconductor device and semiconductor device
02/26/2013US8384165 Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow
02/26/2013US8384163 Layout design tool for semiconductor integrated circuit
02/26/2013US8384159 Semiconductor devices and methods with bilayer dielectrics
02/26/2013US8384155 Semiconductor capacitor
02/26/2013US8384154 Bidirectional power switch controllable to be turned on and off
02/26/2013US8384152 Semiconductor device having trench gate VDMOSFET and method of manufacturing the same
02/26/2013US8384151 Semiconductor device and a reverse conducting IGBT
02/26/2013US8384150 Vertical double diffused MOS transistor with a trench gate structure