Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
---|
02/28/2013 | US20130048952 Hole doping of graphene |
02/28/2013 | US20130048951 Graphene switching device having tunable barrier |
02/28/2013 | US20130048950 On-demand nanoelectronics platform |
02/28/2013 | US20130048949 Carbonaceous Nanomaterial-Based Thin-Film Transistors |
02/28/2013 | US20130048948 Inverter logic devices including graphene field effect transistor having tunable barrier |
02/28/2013 | US20130048947 Methods to fabricate vertically oriented anatase nanowire arrays on transparent conductive substrates and applications thereof |
02/28/2013 | US20130048942 Nitride semiconductor template and light-emitting diode |
02/28/2013 | US20130048941 Solid state light emitting semiconductor structure and epitaxy growth method thereof |
02/28/2013 | DE10236455B4 Halbleiterbauelement mit einem Leistungshalbleiterelement eines Vertikaltyps A semiconductor device comprising a power semiconductor element of a vertical type |
02/28/2013 | DE102012207117A1 Einstellen der Schwellwertspannung in einem FIN-Transistor durch Eckimplantation Setting the threshold voltage in a FIN transistor by Eckimplantation |
02/28/2013 | DE102012107988A1 Halbleiterbauelement mit vergrabener Elektrode A semiconductor device with a buried electrode |
02/28/2013 | DE102012107924A1 Halbleiterbauelement mit einer amorphen halb-isolierenden Schicht, Temperatursensor und Verfahren zur Herstellung eines Halbleiterbauelements A semiconductor device with an amorphous semi-insulating layer, temperature sensor and method for manufacturing a semiconductor device |
02/28/2013 | DE102008062921B4 Leistungshalbleiter mit einer leicht dotierten Drift- und Pufferschicht Power semiconductor with a lightly doped drift and buffer layer |
02/28/2013 | DE102007027446B4 Halbleitersubstrat auf Gruppe-III-V-Nitrid-Basis und lichtemittierende Vorrichtung auf Gruppe-III-V-Nitrid-Basis Semiconductor substrate to the Group III-V nitride-based light emitting device and the group III-V nitride-based |
02/27/2013 | EP2562829A1 Semiconductor element and method for producing the same |
02/27/2013 | EP2562819A2 Method of fabricating a high-voltage transistor |
02/27/2013 | EP2562818A1 Semiconductor device |
02/27/2013 | EP2562817A1 Semiconducting component |
02/27/2013 | EP2562804A1 Method for making a device comprising transistors strained by silicidation of source and drain regions, and device |
02/27/2013 | EP2562803A1 Method for making a device comprising transistors strained by an external layer, and device |
02/27/2013 | EP2562802A2 Method for producing a three-dimensional integrated circuit |
02/27/2013 | EP2562799A1 Semiconductor device and method for manufacturing same |
02/27/2013 | EP2562794A1 Semiconductor device and method for fabricating the same |
02/27/2013 | CN202758895U Power diode device |
02/27/2013 | CN202758894U High frequency circuit transistor |
02/27/2013 | CN202758893U Transistor layout structure and chip layout structure |
02/27/2013 | CN202758892U Trench MOSFET transistor having groove source electrode field plate |
02/27/2013 | CN202758891U Depletion type VDMOS |
02/27/2013 | CN202758890U Transistor layout structure and chip layout structure |
02/27/2013 | CN202758852U Semiconductor device |
02/27/2013 | CN102947963A Organic semiconductive material precursor containing dithienobenzodithiophene derivative, ink, insulating member, charge-transporting member, and organic electronic device |
02/27/2013 | CN102947940A High voltage transistor using diluted drain |
02/27/2013 | CN102947939A Phase control thyristor with improved pattern of local emitter shorts dots |
02/27/2013 | CN102947938A Semiconductor devices having improved adhesion and methods of fabricating the same |
02/27/2013 | CN102947937A Semiconductor device and method for fabricating semiconductor device |
02/27/2013 | CN102947934A Power semiconductor device |
02/27/2013 | CN102947928A Semiconductor device and method for manufacturing same |
02/27/2013 | CN102947921A 半导体器件 Semiconductor devices |
02/27/2013 | CN102947871A Semiconductor device and process for production thereof |
02/27/2013 | CN102947359A Curable composition and method for producing cured film |
02/27/2013 | CN102945863A Thin film transistor and manufacturing method thereof, array substrate and display device |
02/27/2013 | CN102945862A Method for manufacturing semiconductor device |
02/27/2013 | CN102945861A Strip bar modulation type tunneling field effect transistor and manufacture method thereof |
02/27/2013 | CN102945860A AlGaN/GaN heterojunction enhancement-mode device with in-situ SiN cap layer and production method thereof |
02/27/2013 | CN102945859A GaN heterojunction HEMT (High Electron Mobility Transistor) device |
02/27/2013 | CN102945858A IGBT (Insulated Gate Bipolar Transistor) device with field stop buffer layer and manufacture method of IGBT device |
02/27/2013 | CN102945857A 无定形氧化物和场效应晶体管 Amorphous oxide, and field-effect transistors |
02/27/2013 | CN102945856A Reverse conducting IGBT (insulated gate bipolar transistor) structure and preparation method thereof |
02/27/2013 | CN102945851A Silicon on insulator structure and semiconductor device structure |
02/27/2013 | CN102945846A Array substrate, manufacturing method thereof and display device |
02/27/2013 | CN102945807A TFT (Thin Film Transistor) and preparation method thereof |
02/27/2013 | CN102945806A Manufacturing method of MOS (metal oxide semiconductor) device of integrated Schottky diode |
02/27/2013 | CN102945794A Two-dimensional electronic material device and mixed photoetching method thereof |
02/27/2013 | CN102945789A Preparation method of low-temperature polycrystalline silicon film, thin-film transistor and preparation method of thin-film transistor |
02/27/2013 | CN102227000B Silicon-carbide MOSFET (metal-oxide-semiconductor field-effect transistor) device based on super junctions and manufacturing method thereof |
02/27/2013 | CN102104044B Separate gate flash memory and manufacturing method thereof |
02/27/2013 | CN102044433B Mixed source-drain electrode field effect transistor and manufacturing method thereof |
02/27/2013 | CN101946324B Driving method for reverse conducting semiconductor element, semiconductor device, and feeding device |
02/27/2013 | CN101826561B Method of forming stacked capacitor dram cells |
02/27/2013 | CN101814433B Lateral bipolar junction transistor and method for manufacturing the same |
02/27/2013 | CN101796636B Chip connection method |
02/27/2013 | CN101789425B Semiconductor element, electric circuit, display device and light-emitting device |
02/27/2013 | CN101755326B Reducing transistor junction capacitance by recessing drain and source regions |
02/27/2013 | CN101673673B Method for forming epitaxial wafer and epitaxial wafer formed by using same |
02/27/2013 | CN101663733B Method for manufacturing soi substrate and semiconductor device |
02/27/2013 | CN101432859B An soi transistor having an embedded strain layer and a reduced floating body effect and a method for forming the same |
02/27/2013 | CN101390253B Ceramic antenna module and methods of manufacture thereof |
02/26/2013 | US8386883 Lengthening life of a limited life memory |
02/26/2013 | US8385147 Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features |
02/26/2013 | US8385122 Non-volatile memory device having stacked structure, and memory card and electronic system including the same |
02/26/2013 | US8385027 TMR device with novel free layer structure |
02/26/2013 | US8384699 Semiconductor device |
02/26/2013 | US8384657 Semiconductor device |
02/26/2013 | US8384229 Semiconductor device and method for manufacturing the same |
02/26/2013 | US8384228 Package including wires contacting lead frame edge |
02/26/2013 | US8384224 Through wafer vias and method of making same |
02/26/2013 | US8384220 Semiconductor integrated circuit device and fabrication process thereof |
02/26/2013 | US8384218 Back side metallization with superior adhesion in high-performance semiconductor devices |
02/26/2013 | US8384214 Semiconductor structure, pad structure and protection structure |
02/26/2013 | US8384207 Semiconductor integrated circuit device having insulated through wires |
02/26/2013 | US8384200 Semiconductor device assemblies including face-to-face semiconductor dice and systems including such assemblies |
02/26/2013 | US8384198 Resistance change memory and manufacturing method thereof |
02/26/2013 | US8384196 Formation of devices by epitaxial layer overgrowth |
02/26/2013 | US8384195 Nanochannel device and method for manufacturing thereof |
02/26/2013 | US8384194 Power semiconductor device comprising a plurality of trench IGBTs |
02/26/2013 | US8384193 Bipolar transistor with two different emitter portions having same type dopant of different concentrations for improved gain |
02/26/2013 | US8384184 Laterally diffused metal oxide semiconductor device |
02/26/2013 | US8384181 Schottky diode structure with silicon mesa and junction barrier Schottky wells |
02/26/2013 | US8384170 Pressure sensor |
02/26/2013 | US8384168 Sensor device with sealing structure |
02/26/2013 | US8384167 Semiconductor device with field effect transistor and manufacturing method thereof |
02/26/2013 | US8384166 Method for manufacturing semiconductor device and semiconductor device |
02/26/2013 | US8384165 Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow |
02/26/2013 | US8384163 Layout design tool for semiconductor integrated circuit |
02/26/2013 | US8384159 Semiconductor devices and methods with bilayer dielectrics |
02/26/2013 | US8384155 Semiconductor capacitor |
02/26/2013 | US8384154 Bidirectional power switch controllable to be turned on and off |
02/26/2013 | US8384152 Semiconductor device having trench gate VDMOSFET and method of manufacturing the same |
02/26/2013 | US8384151 Semiconductor device and a reverse conducting IGBT |
02/26/2013 | US8384150 Vertical double diffused MOS transistor with a trench gate structure |